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Kunal Mukherjee - Publications

Affiliations: 
2009-2014 Materials Science and Engineering Massachusetts Institute of Technology, Cambridge, MA, United States 
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27 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Hughes ET, Shang C, Selvidge J, Jung D, Wan Y, Herrick RW, Bowers JE, Mukherjee K. Gradual degradation in InAs quantum dot lasers on Si and GaAs. Nanoscale. 16: 2966-2973. PMID 38251961 DOI: 10.1039/d3nr05311c  0.308
2020 France RM, Espinet-Gonzalez P, Haidet BB, Mukherjee K, Guthrey HL, Atwater HA, Walker D. Development of Lattice-Mismatched GaInAsP for Radiation Hardness Ieee Journal of Photovoltaics. 10: 103-108. DOI: 10.1109/Jphotov.2019.2947555  0.388
2020 Haidet BB, Hughes ET, Mukherjee K. Nucleation control and interface structure of rocksalt PbSe on (001) zincblende III-V surfaces Physical Review Materials. 4: 33402. DOI: 10.1103/Physrevmaterials.4.033402  0.435
2020 Selvidge J, Norman J, Hughes ET, Shang C, Jung D, Taylor AA, Kennedy MJ, Herrick R, Bowers JE, Mukherjee K. Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon Applied Physics Letters. 117: 122101. DOI: 10.1063/5.0023378  0.451
2020 Mukherjee K, Selvidge J, Jung D, Norman J, Taylor AA, Salmon M, Liu AY, Bowers JE, Herrick RW. Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon Journal of Applied Physics. 128: 25703. DOI: 10.1063/1.5143606  0.398
2020 Vail O, Taylor P, Folkes P, Nichols B, Haidet B, Mukherjee K, Coster Gd. Growth and Magnetotransport in Thin-Film α-Sn on CdTe Physica Status Solidi B-Basic Solid State Physics. 257: 1800513. DOI: 10.1002/Pssb.201800513  0.402
2020 Shang C, Selvidge J, Hughes E, Norman JC, Taylor AA, Gossard AC, Mukherjee K, Bowers JE. A Pathway to Thin GaAs Virtual Substrate on On‐Axis Si (001) with Ultralow Threading Dislocation Density Physica Status Solidi (a). 2000402. DOI: 10.1002/Pssa.202000402  0.396
2019 Hu Y, Liang D, Mukherjee K, Li Y, Zhang C, Kurczveil G, Huang X, Beausoleil RG. III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template. Light, Science & Applications. 8: 93. PMID 31645936 DOI: 10.1038/S41377-019-0202-6  0.402
2019 Kennard RM, Dahlman CJ, Nakayama H, DeCrescent RA, Schuller JA, Seshadri R, Mukherjee K, Chabinyc ML. Phase Stability and Diffusion in Lateral Heterostructures of Methyl Ammonium Lead Halide Perovskites. Acs Applied Materials & Interfaces. PMID 31268293 DOI: 10.1021/Acsami.9B06069  0.345
2019 Bonef B, Shah R, Mukherjee K. Fast diffusion and segregation along threading dislocations in semiconductor heterostructures. Nano Letters. PMID 30742447 DOI: 10.1021/Acs.Nanolett.8B03734  0.458
2019 Lee JS, Shojaei B, Pendharkar M, Feldman M, Mukherjee K, Palmstrøm CJ. Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001) Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.014603  0.405
2019 Selvidge J, Norman J, Salmon ME, Hughes ET, Bowers JE, Herrick R, Mukherjee K. Non-radiative recombination at dislocations in InAs quantum dots grown on silicon Applied Physics Letters. 115: 131102. DOI: 10.1063/1.5113517  0.444
2019 Hughes ET, Shah RD, Mukherjee K. Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering Journal of Applied Physics. 125: 165702-165702. DOI: 10.1063/1.5088844  0.499
2019 Mukherjee K, Vaisman M, Callahan PG, Lee ML. Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges Journal of Crystal Growth. 512: 169-175. DOI: 10.1016/J.Jcrysgro.2019.01.044  0.583
2018 Callahan PG, Haidet BB, Jung D, Seward GGE, Mukherjee K. Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.081601  0.35
2018 Mukherjee K, Reilly CH, Callahan PG, Seward GGE. Recombination activity of threading dislocations in GaInP influenced by growth temperature Journal of Applied Physics. 123: 165701-165701. DOI: 10.1063/1.5018849  0.436
2018 Jung D, Norman J, Wan Y, Liu S, Herrick R, Selvidge J, Mukherjee K, Gossard AC, Bowers JE. Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy Physica Status Solidi (a). 216: 1800602. DOI: 10.1002/Pssa.201800602  0.341
2017 Jung D, Callahan PG, Shin B, Mukherjee K, Gossard AC, Bowers JE. Low threading dislocation density GaAs growth on on-axis GaP/Si (001) Journal of Applied Physics. 122: 225703. DOI: 10.1063/1.5001360  0.499
2017 Mukherjee K, Wacaser BA, Bedell SW, Sadana DK. Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast Applied Physics Letters. 110: 232101. DOI: 10.1063/1.4984210  0.393
2016 Mukherjee K, Hayamizu Y, Kim CS, Kolchina LM, Mazo GN, Istomin SY, Bishop SR, Tuller HL. Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure. Acs Applied Materials & Interfaces. 8: 34295-34302. PMID 27998143 DOI: 10.1021/Acsami.6B08977  0.364
2015 Mukherjee K, Norman AG, Akey AJ, Buonassisi T, Fitzgerald EA. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence Journal of Applied Physics. 118. DOI: 10.1063/1.4930990  0.568
2015 Mukherjee K, Deotare PB, Fitzgerald EA. Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures Applied Physics Letters. 106. DOI: 10.1063/1.4917254  0.553
2014 Mukherjee K, Beaton DA, Mascarenhas A, Bulsara MT, Fitzgerald EA. Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers Journal of Crystal Growth. 392: 74-80. DOI: 10.1016/J.Jcrysgro.2014.01.058  0.589
2013 Pacella NY, Mukherjee K, Bulsara MT, Fitzgerald EA. Silicon CMOS ohmic contact technology for contacting III-V compound materials Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.015307Jss  0.542
2013 Beaton DA, Christian T, Alberi K, Mascarenhas A, Mukherjee K, Fitzgerald EA. Determination of the direct to indirect bandgap transition composition in AlxIn1-xP Journal of Applied Physics. 114. DOI: 10.1063/1.4833540  0.548
2013 Christian TM, Beaton DA, Mukherjee K, Alberi K, Fitzgerald EA, Mascarenhas A. Amber-green light-emitting diodes using order-disorder Al xIn1-xP heterostructures Journal of Applied Physics. 114. DOI: 10.1063/1.4818477  0.546
2013 Mukherjee K, Beaton DA, Christian T, Jones EJ, Alberi K, Mascarenhas A, Bulsara MT, Fitzgerald EA. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4804264  0.595
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