Year |
Citation |
Score |
2018 |
Fernando NS, Carrasco RA, Hickey R, Hart J, Hazbun R, Schoeche S, Hilfiker JN, Kolodzey J, Zollner S. Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 21202. DOI: 10.1116/1.5001948 |
0.566 |
|
2018 |
Imbrenda D, Hickey R, Carrasco RA, Fernando NS, VanDerslice J, Zollner S, Kolodzey J. Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy Applied Physics Letters. 113: 122104. DOI: 10.1063/1.5040853 |
0.613 |
|
2017 |
Xu C, Fernando NS, Zollner S, Kouvetakis J, Menéndez J. Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n-Type Ge. Physical Review Letters. 118: 267402. PMID 28707902 DOI: 10.1103/Physrevlett.118.267402 |
0.546 |
|
2017 |
Hickey R, Fernando N, Zollner S, Hart J, Hazbun R, Kolodzey J. Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 21205. DOI: 10.1116/1.4975149 |
0.582 |
|
2017 |
Fernando NS, Nunley TN, Ghosh A, Nelson CM, Cooke JA, Medina AA, Zollner S, Xu C, Menendez J, Kouvetakis J. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si Applied Surface Science. 421: 905-912. DOI: 10.1016/J.Apsusc.2016.09.019 |
0.599 |
|
2016 |
Nunley TN, Fernando NS, Samarasingha N, Moya JM, Nelson CM, Medina AA, Zollner S. Optical constants of germanium and thermally grown germanium dioxide from 0.5 to 6.6eV via a multisample ellipsometry investigation Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4963075 |
0.551 |
|
2016 |
Nunley TN, Fernando N, Moya JM, Arachchige NS, Nelson CM, Medina AA, Zollner S. Precise optical constants of Ge and GeO2 from 0.5 to 6.6 eV 2016 Ieee Photonics Society Summer Topical Meeting Series, Sum 2016. 80-81. DOI: 10.1109/PHOSST.2016.7548738 |
0.321 |
|
2016 |
Hart J, Hazbun R, Eldridge D, Hickey R, Fernando N, Adam T, Zollner S, Kolodzey J. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys Thin Solid Films. 604: 23-27. DOI: 10.1016/J.Tsf.2016.03.010 |
0.611 |
|
2016 |
Hazbun R, Hart J, Hickey R, Ghosh A, Fernando N, Zollner S, Adam TN, Kolodzey J. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition Journal of Crystal Growth. 444: 21-27. DOI: 10.1016/J.Jcrysgro.2016.03.018 |
0.597 |
|
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