| Year |
Citation |
Score |
| 2023 |
Kouvetakis J, Wallace PM, Xu C, Ringwala DA, Mircovich M, Roldan MA, Webster PT, Grant PC, Menéndez J. Synthesis of High Sn Content GeSiSn (0.1 < < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications. Acs Applied Materials & Interfaces. 15: 48382-48394. PMID 37801731 DOI: 10.1021/acsami.3c10230 |
0.471 |
|
| 2020 |
Menéndez J, Poweleit CD, Tilton SE. Temperature-dependent photoluminescence in Ge: Experiment and theory Physical Review B. 101. DOI: 10.1103/Physrevb.101.195204 |
0.375 |
|
| 2020 |
Sims P, Wallace P, Liu L, Zhuang H, Kouvetakis J, Menéndez J. Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH4)3 and MH3 (M=P, As, Sb) at temperatures below 600 °C Semiconductor Science and Technology. 35: 085034. DOI: 10.1088/1361-6641/Ab9325 |
0.408 |
|
| 2019 |
Spencer G, Menéndez J. Comment on "Confined-to-propagating transition of LO phonons in GaAs/AlxGa1-xAs superlattices observed by picosecond Raman scattering" Physical Review Letters. 72: 1571. PMID 10055644 DOI: 10.1103/Physrevlett.72.1571 |
0.338 |
|
| 2019 |
Sinha K, Menéndez J. First- and second-order resonant Raman scattering in graphite. Physical Review. B, Condensed Matter. 41: 10845-10847. PMID 9993498 DOI: 10.1103/Physrevb.41.10845 |
0.351 |
|
| 2019 |
Menéndez J. Tetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level. Physical Review. B, Condensed Matter. 38: 6305-6307. PMID 9947097 DOI: 10.1103/Physrevb.38.6305 |
0.334 |
|
| 2019 |
Xu C, Wallace PM, Ringwala DA, Chang SLY, Poweleit CD, Kouvetakis J, Menéndez J. Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties Applied Physics Letters. 114: 212104. DOI: 10.1063/1.5100275 |
0.536 |
|
| 2019 |
Xu C, Kouvetakis J, Menéndez J. Doping dependence of the optical dielectric function in n-type germanium Journal of Applied Physics. 125: 085704. DOI: 10.1063/1.5084277 |
0.41 |
|
| 2019 |
Xu C, Ringwala D, Wang D, Liu L, Poweleit CD, Chang SLY, Zhuang HL, Menéndez J, Kouvetakis J. Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents Chemistry of Materials. 31: 9831-9842. DOI: 10.1021/Acs.Chemmater.9B03909 |
0.538 |
|
| 2019 |
Menéndez J, Wallace P, Xu C, Senaratne C, Gallagher J, Kouvetakis J. Materials physics of GeSn-based semiconductor lasers Materials Today: Proceedings. 14: 38-42. DOI: 10.1016/J.Matpr.2019.05.048 |
0.474 |
|
| 2018 |
Xu C, Wallace P, Ringwala DA, Menéndez J, Kouvetakis J. Fabrication of Ge:Ga hyper-doped materials and devices using CMOS compatible Ga and Ge hydride chemistries. Acs Applied Materials & Interfaces. PMID 30298720 DOI: 10.1021/Acsami.8B10046 |
0.408 |
|
| 2018 |
Menendez J, Lockwood DJ, Zwinkels JC, Noël M. Phonon-assisted optical absorption in germanium Physical Review B. 98: 165207. DOI: 10.1103/Physrevb.98.165207 |
0.321 |
|
| 2018 |
Carrasco RA, Zamarripa CM, Zollner S, Menéndez J, Chastang SA, Duan J, Grzybowski GJ, Claflin BB, Kiefer AM. The direct bandgap of gray α-tin investigated by infrared ellipsometry Applied Physics Letters. 113: 232104. DOI: 10.1063/1.5053884 |
0.615 |
|
| 2017 |
Wallace PM, Sims PE, Xu C, Poweleit CD, Kouvetakis J, Menéndez J. Synthesis, structural, and optical properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y semiconductors using interface engineered group IV platforms. Acs Applied Materials & Interfaces. PMID 28901133 DOI: 10.1021/Acsami.7B09272 |
0.479 |
|
| 2017 |
Xu C, Fernando NS, Zollner S, Kouvetakis J, Menéndez J. Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n-Type Ge. Physical Review Letters. 118: 267402. PMID 28707902 DOI: 10.1103/Physrevlett.118.267402 |
0.651 |
|
| 2017 |
Menéndez J, Noël M, Zwinkels JC, Lockwood DJ. Resonant indirect optical absorption in germanium Physical Review B. 96: 121201. DOI: 10.1103/Physrevb.96.121201 |
0.302 |
|
| 2017 |
Wallace PM, Senaratne CL, Xu C, Sims PE, Kouvetakis J, Menéndez J. Molecular epitaxy of pseudomorphic Ge1−ySny(y= 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10and SnD4 Semiconductor Science and Technology. 32: 025003. DOI: 10.1088/1361-6641/32/2/025003 |
0.42 |
|
| 2017 |
Sims PE, Wallace PM, Xu C, Poweleit CD, Claflin B, Kouvetakis J, Menéndez J. Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks Applied Physics Letters. 111: 122101. DOI: 10.1063/1.5003345 |
0.446 |
|
| 2017 |
Xu C, Senaratne CL, Culbertson RJ, Kouvetakis J, Menéndez J. Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases Journal of Applied Physics. 122: 125702. DOI: 10.1063/1.4996306 |
0.4 |
|
| 2017 |
Sims PE, Xu C, Poweleit CD, Menéndez J, Kouvetakis J. Synthesis and Characterization of Monocrystalline GaPSi3 and (GaP)y(Si)5–2y Phases with Diamond-like Structures via Epitaxy-Driven Reactions of Molecular Hydrides Chemistry of Materials. 29: 3202-3210. DOI: 10.1021/Acs.Chemmater.7B00347 |
0.499 |
|
| 2017 |
Fernando NS, Nunley TN, Ghosh A, Nelson CM, Cooke JA, Medina AA, Zollner S, Xu C, Menendez J, Kouvetakis J. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si Applied Surface Science. 421: 905-912. DOI: 10.1016/J.Apsusc.2016.09.019 |
0.69 |
|
| 2016 |
Xu C, Senaratne CL, Sims P, Kouvetakis J, Menéndez J. Ultra-low Resistivity Ge:Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane. Acs Applied Materials & Interfaces. PMID 27538719 DOI: 10.1021/Acsami.6B06161 |
0.508 |
|
| 2016 |
Xu C, Gallagher JD, Senaratne CL, Menéndez J, Kouvetakis J. Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.125206 |
0.392 |
|
| 2016 |
Xu C, Senaratne CL, Kouvetakis J, Menéndez J. Experimental doping dependence of the lattice parameter in n -type Ge: Identifying the correct theoretical framework by comparison with Si Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.041201 |
0.446 |
|
| 2016 |
Senaratne CL, Wallace PM, Gallagher JD, Sims PE, Kouvetakis J, Menéndez J. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes Journal of Applied Physics. 120. DOI: 10.1063/1.4956439 |
0.52 |
|
| 2015 |
Xu C, Gallagher JD, Sims P, Smith DJ, Menéndez J, Kouvetakis J. Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: Synthesis, electrical performance and optical behavior Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/4/045007 |
0.476 |
|
| 2015 |
Xu C, Gallagher JD, Wallace PM, Senaratne CL, Sims P, Menéndez J, Kouvetakis J. In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105028 |
0.489 |
|
| 2015 |
Gallagher JD, Xu C, Senaratne CL, Aoki T, Wallace PM, Kouvetakis J, Menéndez J. Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications Journal of Applied Physics. 118. DOI: 10.1063/1.4931770 |
0.511 |
|
| 2015 |
Gallagher JD, Senaratne CL, Wallace PM, Menéndez J, Kouvetakis J. Electroluminescence from Ge1-ySny diodes with degenerate pn junctions Applied Physics Letters. 107. DOI: 10.1063/1.4931707 |
0.422 |
|
| 2015 |
Gallagher JD, Senaratne CL, Xu C, Sims P, Aoki T, Smith DJ, Menéndez J, Kouvetakis J. Non-radiative recombination in Ge1-ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs Journal of Applied Physics. 117. DOI: 10.1063/1.4923060 |
0.435 |
|
| 2015 |
Gallagher JD, Senaratne CL, Sims P, Aoki T, Menéndez J, Kouvetakis J. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition Applied Physics Letters. 106. DOI: 10.1063/1.4913688 |
0.375 |
|
| 2015 |
Sims P, Aoki T, Favaro R, Wallace P, White A, Xu C, Menendez J, Kouvetakis J. Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As) Chemistry of Materials. 27: 3030-3039. DOI: 10.1021/Acs.Chemmater.5B00412 |
0.353 |
|
| 2015 |
Gallagher JD, Aoki T, Sims P, Menendez J, Kouvetakis J. Influence of Device Microstructure on The Optical Properties of Ge1-ySny (y=00.11) LEDs Produced by Next Generation Deposition Methods Microscopy and Microanalysis. 21: 2137-2138. DOI: 10.1017/S1431927615011460 |
0.363 |
|
| 2015 |
Sims P, Aoki T, Menendez J, Kouvetakis J. Atomic Scale Structure and Bonding Configurations in Monocrystalline Ah-xBxPSb Alloys Grown Lattice Matched on Si(001) Platforms Microscopy and Microanalysis. 21: 1923-1924. DOI: 10.1017/S1431927615010399 |
0.409 |
|
| 2015 |
Xu C, Senaratne CL, Kouvetakis J, Menéndez J. Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys Solid-State Electronics. DOI: 10.1016/J.Sse.2015.01.015 |
0.346 |
|
| 2014 |
Kouvetakis J, Gallagher J, Menéndez J. Direct gap Group IV semiconductors for next generation Si-based IR photonics Mrs Proceedings. 1666. DOI: 10.1557/Opl.2014.666 |
0.543 |
|
| 2014 |
Jiang L, Gallagher JD, Senaratne CL, Aoki T, Mathews J, Kouvetakis J, Menéndez J. Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115028 |
0.625 |
|
| 2014 |
Xu C, Senaratne CL, Kouvetakis J, Menéndez J. Frustrated incomplete donor ionization in ultra-low resistivity germanium films Applied Physics Letters. 105: 232103. DOI: 10.1063/1.4903492 |
0.389 |
|
| 2014 |
Gallagher JD, Senaratne CL, Kouvetakis J, Menéndez J. Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys Applied Physics Letters. 105. DOI: 10.1063/1.4897272 |
0.363 |
|
| 2014 |
Senaratne CL, Gallagher JD, Jiang L, Aoki T, Smith DJ, Menéndez J, Kouvetakis J. Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties Journal of Applied Physics. 116. DOI: 10.1063/1.4896788 |
0.539 |
|
| 2014 |
Senaratne CL, Gallagher JD, Aoki T, Kouvetakis J, Menéndez J. Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries Chemistry of Materials. 26: 6033-6041. DOI: 10.1021/Cm502988Y |
0.482 |
|
| 2014 |
Kouvetakis J, Favaro R, Grzybowski GJ, Senaratne C, Menéndez J, Chizmeshya AVG. Molecular strategies for configurational sulfur doping of group IV semiconductors grown on Si(100) using S(MH3)2 (M = Si,Ge) delivery sources: An experimental and theoretical inquiry Chemistry of Materials. 26: 4447-4458. DOI: 10.1021/Cm501434Z |
0.51 |
|
| 2014 |
Jiang L, Aoki T, Smith DJ, Chizmeshya AVG, Menendez J, Kouvetakis J. Nanostructure-property control in AlPSi3/Si(100) semiconductors using direct molecular assembly: Theory meets experiment at the atomic level Chemistry of Materials. 26: 4092-4101. DOI: 10.1021/Cm500926Q |
0.476 |
|
| 2014 |
Jiang L, Xu C, Gallagher JD, Favaro R, Aoki T, Menéndez J, Kouvetakis J. Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications Chemistry of Materials. 26: 2522-2531. DOI: 10.1021/Cm403801B |
0.565 |
|
| 2014 |
Aoki T, Jiang L, Chizmeshya AVG, Menéndez J, Kouvetakis J, Smith DJ. Atomic scale studies of structure and bonding in A1PSi<inf>3</inf> alloys grown lattice-matched on Si(001) Microscopy and Microanalysis. 20: 524-525. DOI: 10.1017/S1431927614004346 |
0.408 |
|
| 2014 |
Jiang L, Aoki T, Kouvetakis J, Menéndez J. High Resolution EELS Study of Ge1-ySny and Ge1-x-ySixSny Alloys Microscopy and Microanalysis. 20: 520-521. DOI: 10.1017/S1431927614004322 |
0.491 |
|
| 2014 |
Xu C, Beeler RT, Jiang L, Gallagher JD, Favaro R, Menéndez J, Kouvetakis J. Synthesis and optical properties of Sn-rich Ge1-X -ySi xSny materials and devices Thin Solid Films. 557: 177-182. DOI: 10.1016/J.Tsf.2013.08.043 |
0.541 |
|
| 2013 |
Sims PE, Chizmeshya AV, Jiang L, Beeler RT, Poweleit CD, Gallagher J, Smith DJ, Menéndez J, Kouvetakis J. Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties. Journal of the American Chemical Society. 135: 12388-99. PMID 23899409 DOI: 10.1021/Ja405726B |
0.473 |
|
| 2013 |
Beeler RT, Gallagher J, Xu C, Jiang L, Senaratne CL, Smith DJ, Menéndez J, Chizmeshya AVG, Kouvetakis J. Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.034309Jss |
0.493 |
|
| 2013 |
Jiang L, Sims PE, Grzybowski G, Beeler RT, Chizmeshya AVG, Smith DJ, Kouvetakis J, Menéndez J. Nanoscale assembly of silicon-like [Al(As1-xNx)] ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.045208 |
0.513 |
|
| 2013 |
Xu C, Beeler RT, Jiang L, Grzybowski G, Chizmeshya AVG, Menéndez J, Kouvetakis J. New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105001 |
0.482 |
|
| 2013 |
Gallagher JD, Xu C, Jiang L, Kouvetakis J, Menéndez J. Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys Applied Physics Letters. 103. DOI: 10.1063/1.4829621 |
0.432 |
|
| 2013 |
Xu C, Jiang L, Kouvetakis J, Menéndez J. Optical properties of Ge1-x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm Applied Physics Letters. 103: 072111. DOI: 10.1063/1.4818673 |
0.508 |
|
| 2013 |
Grzybowski G, Chizmeshya AVG, Senaratne C, Menendez J, Kouvetakis J. Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication Journal of Materials Chemistry C. 1: 5223-5234. DOI: 10.1039/C3Tc30865K |
0.404 |
|
| 2012 |
Xu C, Beeler RT, Grzybowski GJ, Chizmeshya AV, Smith DJ, Menéndez J, Kouvetakis J. Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn. Journal of the American Chemical Society. 134: 20756-67. PMID 23237361 DOI: 10.1021/Ja309894C |
0.526 |
|
| 2012 |
Klionsky DJ, Abdalla FC, Abeliovich H, Abraham RT, Acevedo-Arozena A, Adeli K, Agholme L, Agnello M, Agostinis P, Aguirre-Ghiso JA, Ahn HJ, Ait-Mohamed O, Ait-Si-Ali S, Akematsu T, Akira S, et al. Guidelines for the use and interpretation of assays for monitoring autophagy. Autophagy. 8: 445-544. PMID 22966490 DOI: 10.4161/Auto.19496 |
0.378 |
|
| 2012 |
Teherani JT, Chern W, Antoniadis DA, Hoyt JL, Ruiz L, Poweleit CD, Menéndez J. Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.205308 |
0.478 |
|
| 2012 |
Singh R, Poweleit CD, Dailey E, Drucker J, Menendez J. Raman scattering characterization of strain in Ge–Si core–shell nanowires Semiconductor Science and Technology. 27: 85008. DOI: 10.1088/0268-1242/27/8/085008 |
0.552 |
|
| 2012 |
Beeler RT, Xu C, Smith DJ, Grzybowski G, Menéndez J, Kouvetakis J. Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si 4H10, and SnD4 Applied Physics Letters. 101. DOI: 10.1063/1.4768217 |
0.526 |
|
| 2012 |
Grzybowski G, Beeler RT, Jiang L, Smith DJ, Kouvetakis J, Menéndez J. Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission Applied Physics Letters. 101. DOI: 10.1063/1.4745770 |
0.485 |
|
| 2012 |
Watkins T, Jiang L, Xu C, Chizmeshya AVG, Smith DJ, Menéndez J, Kouvetakis J. (Si) 5-2y(AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units Applied Physics Letters. 100. DOI: 10.1063/1.3675444 |
0.501 |
|
| 2012 |
Kouvetakis J, Chizmeshya AVG, Jiang L, Watkins T, Grzybowski G, Beeler RT, Poweleit C, Menéndez J. Monocrystalline Al(As1-xNx)Si3 and Al(P1-xNx)ySi5-2 y alloys with diamond-like structures: New chemical approaches to semiconductors lattice matched to Si Chemistry of Materials. 24: 3219-3230. DOI: 10.1021/Cm301616S |
0.505 |
|
| 2012 |
Grzybowski G, Watkins T, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menéndez J. Synthesis and properties of monocrystalline Al(As 1-xP x)Si 3 alloys on Si(100) Chemistry of Materials. 24: 2347-2355. DOI: 10.1021/Cm300761R |
0.501 |
|
| 2012 |
Grzybowski G, Jiang L, Beeler RT, Watkins T, Chizmeshya AVG, Xu C, Menéndez J, Kouvetakis J. Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10) Chemistry of Materials. 24: 1619-1628. DOI: 10.1021/Cm3002404 |
0.494 |
|
| 2011 |
Watkins T, Chizmeshya AV, Jiang L, Smith DJ, Beeler RT, Grzybowski G, Poweleit CD, Menéndez J, Kouvetakis J. Nanosynthesis routes to new tetrahedral crystalline solids: silicon-like Si3AlP. Journal of the American Chemical Society. 133: 16212-8. PMID 21877711 DOI: 10.1021/Ja206738V |
0.509 |
|
| 2011 |
Grzybowski G, Roucka R, Mathews J, Jiang L, Beeler RT, Kouvetakis J, Menéndez J. Direct versus indirect optical recombination in Ge films grown on Si substrates Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205307 |
0.666 |
|
| 2011 |
Bagchi S, Poweleit CD, Beeler RT, Kouvetakis J, Menéndez J. Temperature dependence of the Raman spectrum in Ge1-ySn y and Ge1-x-ySixSny alloys Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.193201 |
0.595 |
|
| 2011 |
Beeler R, Roucka R, Chizmeshya AVG, Kouvetakis J, Menéndez J. Nonlinear structure-composition relationships in the Ge 1-ySny/Si(100) (y<0.15) system Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035204 |
0.438 |
|
| 2011 |
Watkins T, Jiang L, Smith DJ, Chizmeshya AVG, Menendez J, Kouvetakis J. Designer hydride routes to 'Si-Ge'/(Gd,Er)2O3/Si(1 1 1) semiconductor-on-insulator heterostructures Semiconductor Science and Technology. 26. DOI: 10.1088/0268-1242/26/12/125005 |
0.511 |
|
| 2011 |
Singh R, Dailey EJ, Drucker J, Menendez J. Raman scattering from Ge-Si core-shell nanowires: Validity of analytical strain models Journal of Applied Physics. 110: 124305. DOI: 10.1063/1.3667125 |
0.593 |
|
| 2011 |
Roucka R, Beeler R, Mathews J, Ryu MY, Kee Yeo Y, Menéndez J, Kouvetakis J. Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100) Journal of Applied Physics. 109. DOI: 10.1063/1.3592965 |
0.665 |
|
| 2011 |
Beeler RT, Grzybowski GJ, Roucka R, Jiang L, Mathews J, Smith DJ, Menéndez J, Chizmeshya AVG, Kouvetakis J. Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices Chemistry of Materials. 23: 4480-4486. DOI: 10.1021/Cm201648X |
0.692 |
|
| 2011 |
Menendez J, Singh R, Drucker J. Theory of strain effects on the Raman spectrum of Si-Ge core-shell nanowires Annalen Der Physik. 523: 145-156. DOI: 10.1002/Andp.201000106 |
0.636 |
|
| 2010 |
Tice JB, Chizmeshya AV, Tolle J, D' Costa VR, Menendez J, Kouvetakis J. Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis. Dalton Transactions (Cambridge, England : 2003). 39: 4551-8. PMID 20379588 DOI: 10.1039/C001212B |
0.423 |
|
| 2010 |
Kouvetakis J, Mathews J, Roucka R, Chizmeshya AVG, Tolle J, Menendez J. Practical materials chemistry approaches for tuning optical and structural properties of group IV semiconductors and prototype photonic devices Ieee Photonics Journal. 2: 924-941. DOI: 10.1109/Jphot.2010.2081357 |
0.648 |
|
| 2010 |
Roucka R, Fang YY, Kouvetakis J, Chizmeshya AVG, Menéndez J. Thermal expansivity of Ge1-y sny alloys Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245214 |
0.417 |
|
| 2010 |
Tice JB, D'Costa VR, Grzybowski G, Chizmeshya AVG, Tolle J, Menendez J, Kouvetakis J. Synthesis and optical properties of amorphous Si3N 4- xPx dielectrics and complementary insights from ab initio structural simulations Chemistry of Materials. 22: 5296-5305. DOI: 10.1021/Cm101448A |
0.747 |
|
| 2010 |
Xie J, Chizmeshya AVG, Tolle J, Dcosta VR, Menendez J, Kouvetakis J. Synthesis, stability range, and fundamental properties of Si-Ge-Sn semiconductors grown directly on Si(100) and Ge(100) platforms Chemistry of Materials. 22: 3779-3789. DOI: 10.1021/Cm100915Q |
0.53 |
|
| 2010 |
D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menéndez J. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors Thin Solid Films. 518: 2531-2537. DOI: 10.1016/J.Tsf.2009.09.149 |
0.747 |
|
| 2009 |
Tice JB, Weng C, Tolle J, D'Costa VR, Singh R, Menendez J, Kouvetakis J, Chizmeshya AV. Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics. Dalton Transactions (Cambridge, England : 2003). 6773-82. PMID 19690688 DOI: 10.1039/B908280H |
0.782 |
|
| 2009 |
D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menéndez J. Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys. Physical Review Letters. 102: 107403. PMID 19392159 DOI: 10.1103/Physrevlett.102.107403 |
0.772 |
|
| 2009 |
Kouvetakis J, Menendez J, Tolle J. Advanced Si-based Semiconductors for Energy and Photonic Applications Solid State Phenomena. 77-84. DOI: 10.4028/Www.Scientific.Net/Ssp.156-158.77 |
0.494 |
|
| 2009 |
D'Costa VR, Tolle J, Xie J, Kouvetakis J, Menéndez J. Infrared dielectric function of p -type Ge0.98 Sn0.02 alloys Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.125209 |
0.725 |
|
| 2009 |
D'Costa VR, Fang Y, Mathews J, Roucka R, Tolle J, Menéndez J, Kouvetakis J. Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/11/115006 |
0.792 |
|
| 2009 |
Mathews J, Roucka R, Xie J, Yu S, Menéndez J, Kouvetakis J. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications Applied Physics Letters. 95: 133506. DOI: 10.1063/1.3238327 |
0.655 |
|
| 2009 |
Fang YY, Tolle J, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menendez J. Practical B and P doping via Six Sny Ge1-x-y-z Mz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior Applied Physics Letters. 95. DOI: 10.1063/1.3204456 |
0.754 |
|
| 2009 |
Menéndez J. Analytical strain relaxation model for Si1-xGex/Si epitaxial layers Journal of Applied Physics. 105: 63519. DOI: 10.1063/1.3093889 |
0.423 |
|
| 2009 |
Tolle J, Roucka R, Forrest B, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Poweleit CD, Groenert M, Sato T, Menéndez J. Integration of Zn-Cd-Te-Se Semiconductors on Si platforms via structurally designed cubic templates based on group IV elements Chemistry of Materials. 21: 3143-3152. DOI: 10.1021/Cm900437Y |
0.76 |
|
| 2009 |
Fang YY, D'Costa VR, Tolle J, Tice JB, Poweleit CD, Menéndez J, Kouvetakis J. Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocks Solid State Communications. 149: 78-81. DOI: 10.1016/J.Ssc.2008.10.009 |
0.771 |
|
| 2008 |
Fang YY, Xie J, Tolle J, Roucka R, D'Costa VR, Chizmeshya AV, Menendez J, Kouvetakis J. Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics. Journal of the American Chemical Society. 130: 16095-102. PMID 19032100 DOI: 10.1021/Ja806636C |
0.775 |
|
| 2008 |
Roucka R, Xie J, Kouvetakis J, Mathews J, D’Costa V, Menéndez J, Tolle J, Yu S. Ge1−ySny photoconductor structures at 1.55μm: From advanced materials to prototype devices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1952-1959. DOI: 10.1116/1.3021024 |
0.632 |
|
| 2008 |
Kouvetakis J, An YJ, D'Costa VR, Tolle J, Chizmeshya AVG, Menéndez J, Roucka R. Synthesis of (Hf, Zr)B2-based heterostructures: Hybrid substrate systems for low temperature Al-Ga-N integration with Si Journal of Materials Chemistry. 18: 4775-4782. DOI: 10.1039/B807097K |
0.775 |
|
| 2008 |
Roucka R, D'Costa VR, An YJ, Canonico M, Kouvetakis J, Menéndez J, Chizmeshya AVG. Thermoelastic and optical properties of thick boride templates on silicon for nitride integration applications Chemistry of Materials. 20: 1431-1442. DOI: 10.1021/Cm702547P |
0.81 |
|
| 2008 |
Fang YY, D'Costa VR, Tolle J, Poweleit CD, Kouvetakis J, Menéndez J. Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100) Thin Solid Films. 516: 8327-8332. DOI: 10.1016/J.Tsf.2008.03.045 |
0.758 |
|
| 2008 |
Roucka R, An YJ, Chizmeshya AVG, D'Costa VR, Tolle J, Menéndez J, Kouvetakis J. Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates Solid-State Electronics. 52: 1687-1690. DOI: 10.1016/J.Sse.2008.07.013 |
0.756 |
|
| 2007 |
Rao R, Menendez J, Poweleit CD, Rao AM. Anharmonic phonon lifetimes in carbon nanotubes: evidence for a one-dimensional phonon decay bottleneck. Physical Review Letters. 99: 047403. PMID 17678403 DOI: 10.1103/Physrevlett.99.047403 |
0.304 |
|
| 2007 |
Soref R, Kouvetakis J, Tolle J, Menendez J, D’Costa V. Advances in SiGeSn technology Journal of Materials Research. 22: 3281-3291. DOI: 10.1557/Jmr.2007.0415 |
0.541 |
|
| 2007 |
D'Costa VR, Tolle J, Poweleit CD, Kouvetakis J, Menéndez J. Compositional dependence of Raman frequencies in ternary Ge1-x-y Six Sny alloys Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.035211 |
0.756 |
|
| 2007 |
Sun G, Cheng HH, Menéndez J, Khurgin JB, Soref RA. Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions Applied Physics Letters. 90: 251105. DOI: 10.1063/1.2749844 |
0.487 |
|
| 2007 |
Fang YY, Tolle J, Tice J, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menéndez J. Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry Chemistry of Materials. 19: 5910-5925. DOI: 10.1021/Cm071581V |
0.759 |
|
| 2007 |
D'Costa VR, Tolle J, Roucka R, Poweleit CD, Kouvetakis J, Menéndez J. Raman scattering in Ge1-ySny alloys Solid State Communications. 144: 240-244. DOI: 10.1016/J.Ssc.2007.08.020 |
0.712 |
|
| 2006 |
Soref R, Kouvetakis J, Menendez J. Advances in SiGeSn/Ge Technology Mrs Proceedings. 958. DOI: 10.1557/Proc-0958-L01-08 |
0.554 |
|
| 2006 |
Kouvetakis J, Menendez J, Chizmeshya AVG. Tin-based group IV semiconductors: New platforms for opto- and microelectronics on silicon Annual Review of Materials Research. 36: 497-554. DOI: 10.1146/Annurev.Matsci.36.090804.095159 |
0.467 |
|
| 2006 |
D'Costa VR, Cook CS, Birdwell AG, Littler CL, Canonico M, Zollner S, Kouvetakis J, Menéndez J. Optical critical points of thin-film Ge1-y Sny alloys: A comparative Ge1-y Sny Ge1-x six study Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125207 |
0.79 |
|
| 2006 |
Tolle J, Chizmeshya AVG, Fang YY, Kouvetakis J, D'Costa VR, Hu CW, Menéndez J, Tsong IST. Low temperature chemical vapor deposition of Si-based compounds via SiH 3SiH 2SiH 3: Metastable SiSn/GeSn/Si(100) heteroepitaxial structures Applied Physics Letters. 89. DOI: 10.1063/1.2403903 |
0.764 |
|
| 2006 |
Roucka R, An Y, Chizmeshya AVG, Tolle J, Kouvetakis J, D'Costa VR, Menéndez J, Crozier P. Epitaxial semimetallic Hf xZr 1-xB 2 templates for optoelectronic integration on silicon Applied Physics Letters. 89. DOI: 10.1063/1.2403189 |
0.766 |
|
| 2006 |
Tolle J, Roucka R, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menéndez J. Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon Applied Physics Letters. 88. DOI: 10.1063/1.2213014 |
0.743 |
|
| 2006 |
Chizmeshya AVG, Ritter C, Tolle J, Cook C, Menéndez J, Kouvetakis J. Fundamental Studies of P(GeH3)3, As(GeH 3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors Chemistry of Materials. 18: 6266-6277. DOI: 10.1021/Cm061696J |
0.441 |
|
| 2006 |
D'Costa VR, Cook CS, Menéndez J, Tolle J, Kouvetakis J, Zollner S. Transferability of optical bowing parameters between binary and ternary group-IV alloys Solid State Communications. 138: 309-313. DOI: 10.1016/J.Ssc.2006.02.023 |
0.774 |
|
| 2005 |
Tolle J, Roucka R, D'Costa V, Menendez J, Chizmeshya A, Kouvetakis J. Sn-based Group-IV Semiconductors on Si: New Infrared Materials and New Templates for Mismatched Epitaxy Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee12-08 |
0.774 |
|
| 2005 |
Aku-Leh C, Zhao J, Merlin R, Menéndez J, Cardona M. Long-lived optical phonons in ZnO studied with impulsive stimulated Raman scattering Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.205211 |
0.627 |
|
| 2005 |
Bussi G, Menendez J, Ren J, Canonico M, Molinari E. Quantum interferences in the Raman cross section for the radial breathing mode in metallic carbon nanotubes Physical Review B. 71: 41404. DOI: 10.1103/Physrevb.71.041404 |
0.315 |
|
| 2005 |
Roucka R, Tolle J, Cook C, Chizmeshya AVG, Kouvetakis J, D'Costa V, Menendez J, Chen ZD, Zollner S. Versatile buffer layer architectures based on Ge 1- x Sn x alloys Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922078 |
0.8 |
|
| 2005 |
Shetty PK, Theodore ND, Ren J, Menendez J, Kim HC, Misra E, Mayer JW, Alford TL. Formation and characterization of silicon films on flexible polymer substrates Materials Letters. 59: 872-875. DOI: 10.1016/J.Matlet.2004.11.034 |
0.426 |
|
| 2004 |
Manjón FJ, Hernández-Fenollosa MA, Marí B, Li SF, Poweleit CD, Bell A, Menéndez J, Cardona M. Effect of N isotopic mass on the photoluminescence and cathodoluminescence spectra of gallium nitride European Physical Journal B. 40: 453-458. DOI: 10.1140/Epjb/E2004-00211-1 |
0.449 |
|
| 2004 |
Menéndez J, Kouvetakis J. Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap Applied Physics Letters. 85: 1175-1177. DOI: 10.1063/1.1784032 |
0.399 |
|
| 2004 |
Shi L, Ponce F, Menendez J. Raman line shape of the A1 longitudinal optical phonon in GaN Applied Physics Letters. 84: 3471-3473. DOI: 10.1063/1.1737792 |
0.518 |
|
| 2004 |
Li SF, Bauer MR, Menéndez J, Kouvetakis J. Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys Applied Physics Letters. 84: 867-869. DOI: 10.1063/1.1645667 |
0.419 |
|
| 2004 |
Cook CS, Zollner S, Bauer MR, Aella P, Kouvetakis J, Menendez J. Optical constants and interband transitions of Ge1-xSn x alloys (x<0.2) grown on Si by UHV-CVD Thin Solid Films. 455: 217-221. DOI: 10.1016/J.Tsf.2003.11.277 |
0.706 |
|
| 2003 |
Bauer M, Ritter C, Crozier PA, Ren J, Menendez J, Wolf G, Kouvetakis J. Synthesis of ternary SiGeSn semiconductors on Si(100) via Sn xGe1-x buffer layers Applied Physics Letters. 83: 2163-2165. DOI: 10.1063/1.1606104 |
0.464 |
|
| 2003 |
Bauer MR, Tolle J, Bungay C, Chizmeshya AVG, Smith DJ, Menéndez J, Kouvetakis J. Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates Solid State Communications. 127: 355-359. DOI: 10.1016/S0038-1098(03)00446-0 |
0.531 |
|
| 2003 |
Ren J, Page JB, Menéndez J. Isotope effects on the Raman spectrum of buckminsterfullerene, C60 Journal of Raman Spectroscopy. 34: 380-387. DOI: 10.1002/Jrs.992 |
0.308 |
|
| 2002 |
Mcguire K, Pan ZW, Wang ZL, Milkie D, Menéndez J, Rao AM. Raman studies of semiconducting oxide nanobelts. Journal of Nanoscience and Nanotechnology. 2: 499-502. PMID 12908287 DOI: 10.1166/153348802760394070 |
0.335 |
|
| 2002 |
Canonico M, Poweleit C, Menendez J, Debernardi A, Johnson S, Zhang Y. Anomalous LO phonon lifetime in AlAs. Physical Review Letters. 88: 215502-215502. PMID 12059485 DOI: 10.1103/Physrevlett.88.215502 |
0.353 |
|
| 2002 |
Bauer MR, Tolle J, Chizmeshya AVG, Zollner S, Menendez J, Kouvetakis J. New Ge-Sn materials with adjustable bandgaps and lattice constants Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M2.5 |
0.693 |
|
| 2002 |
Canonico M, Adams GB, Poweleit C, Menendez J, Page JB, Harris G, Meulen HPVD, Calleja JM, Rubio J. Characterization of carbon nanotubes using Raman excitation profiles Physical Review B. 65: 201402. DOI: 10.1103/Physrevb.65.201402 |
0.756 |
|
| 2002 |
Torrison L, Tolle J, Smith DJ, Poweleit C, Menendez J, Mitan MM, Alford TL, Kouvetakis J. Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition Journal of Applied Physics. 92: 7475-7480. DOI: 10.1063/1.1525046 |
0.452 |
|
| 2002 |
Bauer M, Taraci J, Tolle J, Chizmeshya AVG, Zollner S, Smith DJ, Menendez J, Hu C, Kouvetakis J. Ge-Sn semiconductors for band-gap and lattice engineering Applied Physics Letters. 81: 2992-2994. DOI: 10.1063/1.1515133 |
0.704 |
|
| 2001 |
Taraci J, Zollner S, McCartney MR, Menendez J, Santana-Aranda MA, Smith DJ, Haaland A, Tutukin AV, Gundersen G, Wolf G, Kouvetakis J. Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods. Journal of the American Chemical Society. 123: 10980-7. PMID 11686702 DOI: 10.1021/Ja0115058 |
0.701 |
|
| 2001 |
Taraci J, Zollner S, McCartney MR, Menendez J, Smith DJ, Tolle J, Bauer M, Duda E, Edwards NV, Kouvetakis J. Optical Vibrational and Structural Properties of Ge1−xSn x alloys by UHV-CVD Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H11.4.1 |
0.684 |
|
| 2001 |
Shi L, Poweleit CD, Ponce F, Menendez J, Chow WW. Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well Applied Physics Letters. 79: 75-77. DOI: 10.1063/1.1381422 |
0.543 |
|
| 2001 |
Taraci J, Tolle J, Kouvetakis J, McCartney MR, Smith DJ, Menendez J, Santana MA. Simple chemical routes to diamond-cubic germanium–tin alloys Applied Physics Letters. 78: 3607-3609. DOI: 10.1063/1.1376156 |
0.481 |
|
| 1999 |
Loechelt GH, Cave NG, Menendez J. Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductors Journal of Applied Physics. 86: 6164-6180. DOI: 10.1063/1.371670 |
0.307 |
|
| 1998 |
Nesting DC, Kouvetakis J, Lorentzen J, Menéndez J. The Application of Novel Chemical Precursors for the Preparation of Si-Ge-C Heterostructures and Superlattices Mrs Proceedings. 533. DOI: 10.1557/Proc-533-281 |
0.449 |
|
| 1998 |
Windl W, Sankey OF, Menendez J. Theory of strain and electronic structure of Si 1-y C y and Si 1-x-y Ge x C y alloys Physical Review B. 57: 2431-2442. DOI: 10.1103/Physrevb.57.2431 |
0.432 |
|
| 1998 |
Poweleit CD, Gunther A, Goodnick S, Menéndez J. Raman imaging of patterned silicon using a solid immersion lens Applied Physics Letters. 73: 2275-2277. DOI: 10.1063/1.121700 |
0.304 |
|
| 1998 |
Chandrasekhar D, McMurran J, Smith DJ, Kouvetakis J, Lorentzen JD, Menéndez J. Strategies for the synthesis of highly concentrated Si1-yCy diamond-structured systems Applied Physics Letters. 72: 2117-2119. DOI: 10.1063/1.121294 |
0.445 |
|
| 1997 |
Windl W, Kress JD, Voter AF, Menendez J, Sankey OF. Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys Materials Research Society Symposium - Proceedings. 469: 443-448. DOI: 10.1557/Proc-469-443 |
0.431 |
|
| 1997 |
Meléndez-Lira M, Lorentzen JD, Menendez J, Windl W, Cave NG, Liu R, Christiansen JW, Theodore ND, Candelaria JJ. Microscopic carbon distribution in Si1-yCy alloys: A Raman scattering study Physical Review B. 56: 3648-3650. DOI: 10.1103/Physrevb.56.3648 |
0.482 |
|
| 1997 |
Meléndez-Lira M, Menendez J, Kramer KM, Thompson MO, Cave N, Liu R, Christiansen JW, Theodore ND, Candelaria JJ. Substitutional carbon in Si1−yCy alloys as measured with infrared absorption and Raman spectroscopy Journal of Applied Physics. 82: 4246-4252. DOI: 10.1063/1.366231 |
0.409 |
|
| 1997 |
Lorentzen JD, Loechelt GH, Meléndez-Lira M, Menéndez J, Sego S, Culbertson RJ, Windl W, Sankey OF, Bair AE, Alford TL. Photoluminescence in Si1−x−yGexCy alloys Applied Physics Letters. 70: 2353-2355. DOI: 10.1063/1.118871 |
0.495 |
|
| 1996 |
Meléndez-Lira M, Menéndez J, Windl W, Sankey OF, Spencer GS, Sego S, Culbertson RB, Bair AE, Alford TL. Carbon dependence of Raman mode frequencies in Si1-x-yGexCy alloys. Physical Review. B, Condensed Matter. 54: 12866-12872. PMID 9985144 DOI: 10.1103/Physrevb.54.12866 |
0.417 |
|
| 1996 |
Guha S, Menéndez J, Page JB, Adams GB. Empirical bond polarizability model for fullerenes. Physical Review. B, Condensed Matter. 53: 13106-13114. PMID 9982989 DOI: 10.1103/Physrevb.53.13106 |
0.436 |
|
| 1996 |
Tsen K, Grann ED, Guha S, Menendez J. Electron-phonon interactions in solid C60 studied by transient picosecond Raman spectroscopy Applied Physics Letters. 68: 1051-1053. DOI: 10.1063/1.116245 |
0.304 |
|
| 1996 |
Spencer GS, Menéndez J, Pfeiffer LN, West KW. Laser-frequency dependence of raman modes in GaAs-AlAs superlattices Solid State Communications. 97: 21-25. DOI: 10.1016/0038-1098(95)00595-1 |
0.306 |
|
| 1995 |
Spencer GS, Menéndez J, Pfeiffer LN, West KW. Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices: An examination of interface disorder. Physical Review. B, Condensed Matter. 52: 8205-8218. PMID 9979819 DOI: 10.1103/Physrevb.52.8205 |
0.346 |
|
| 1995 |
Loechelt GH, Cave NG, Menendez J. Measuring the tensor nature of stress in silicon using polarized off‐axis Raman spectroscopy Applied Physics Letters. 66: 3639-3641. DOI: 10.1063/1.114125 |
0.316 |
|
| 1995 |
Menendez J, Gopalan P, Spencer GS, Cave N, Strane JW. Raman spectroscopy study of microscopic strain in epitaxial Si1-x-yGexCy alloys Applied Physics Letters. 66: 1160-1162. DOI: 10.1063/1.113843 |
0.508 |
|
| 1994 |
Guha S, Menéndez J, Page JB, Adams GB, Spencer GS, Lehman JP, Giannozzi P, Baroni S. Isotopically resolved Raman spectra of C60. Physical Review Letters. 72: 3359-3362. PMID 10056178 DOI: 10.1103/Physrevlett.72.3359 |
0.47 |
|
| 1993 |
Sinha K, Guha S, Menéndez J, Ramakrishna BL, Wright D, Karcher T. Raman study of photoexcited C60 Solid State Communications. 87: 981-986. DOI: 10.1016/0038-1098(93)90544-W |
0.31 |
|
| 1992 |
Sinha K, Menéndez J, Wright D, Niles DW, Höchst H. Nonuniform strain gradients in CdS/GaAs films measured by reflection high-energy electron diffraction and Raman spectroscopy: A microscopic approach Journal of Applied Physics. 71: 2640-2643. DOI: 10.1063/1.351034 |
0.372 |
|
| 1992 |
Sinha K, Menéndez J, Sankey OF, Johnson DA, Varhue WJ, Kidder JN, Pastel PW, Lanford W. Raman scattering and the π-orbitals in amorphous carbon films Applied Physics Letters. 60: 562-564. DOI: 10.1063/1.106608 |
0.383 |
|
| 1991 |
Sinha K, Menéndez J, Niles DW, Höchst H. Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2202-2205. DOI: 10.1116/1.585765 |
0.372 |
|
| 1991 |
Grant J, Menendez J, Pfeiffer LN, West KW, Molinari E, Baroni S. Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy Applied Physics Letters. 59: 2859-2861. DOI: 10.1063/1.105833 |
0.378 |
|
| 1991 |
Sinha K, Menéndez J, Hanson RC, Adams GB, Page JB, Sankey OF, Lamb LD, Huffman DR. Evidence for solid-state effects in the electronic structure of C60 films: a resonance-Raman study Chemical Physics Letters. 186: 287-290. DOI: 10.1016/S0009-2614(91)85143-K |
0.374 |
|
| 1990 |
Vorlek V, Gregora I, Kauschke W, Menéndez J, Cardona M. Raman scattering by the coupled plasmon-LO-phonon modes near the E0+ Delta 0 gap of n-type GaAs: Resonance and interference effects. Physical Review. B, Condensed Matter. 42: 5802-5808. PMID 9996166 DOI: 10.1103/Physrevb.42.5802 |
0.425 |
|
| 1990 |
Menéndez J, Sinha K, Höchst H, Engelhardt MA. Phonons in epitaxially grown α-Sn1-xGex alloys Applied Physics Letters. 57: 380-382. DOI: 10.1063/1.103698 |
0.466 |
|
| 1990 |
Menéndez J, Pinczuk A, Valladares JP, Pfeiffer LN, West KW, Gossard AC, English JH. Raman investigation of strong quasi-direct optical transitions in ultrathin GaAsAIAs superlattices Surface Science. 228: 65-68. DOI: 10.1016/0039-6028(90)90260-F |
0.36 |
|
| 1989 |
Menéndez J. Phonons in GaAs-AlxGa1−xAs superlattices Journal of Luminescence. 44: 285-314. DOI: 10.1016/0022-2313(89)90064-1 |
0.351 |
|
| 1988 |
Menéndez J, Pinczuk A, Bevk J, Mannaerts JP. Raman study of order and disorder in SiGe ultrathin superlattices Journal of Vacuum Science & Technology B. 6: 1306-1309. DOI: 10.1116/1.584254 |
0.36 |
|
| 1988 |
Menéndez J, Pinczuk A. Light Scattering Determinations of Band Offsets in Semiconductor Heterostructures Ieee Journal of Quantum Electronics. 24: 1698-1711. DOI: 10.1109/3.7100 |
0.336 |
|
| 1988 |
Kisker DW, Fuoss PH, Krajewski JJ, Amirtharaj PM, Nakahara S, Menendez J. OMVPE growth of CdTe-ZnTe superlattices Journal of Crystal Growth. 86: 210-216. DOI: 10.1016/0022-0248(90)90718-Z |
0.42 |
|
| 1987 |
Sood AK, Kauschke W, Menéndez J, Cardona M. Resonance Raman scattering by optical phonons in GaAs near the E0 band gap. Physical Review. B, Condensed Matter. 35: 2886-2891. PMID 9941768 DOI: 10.1103/Physrevb.35.2886 |
0.617 |
|
| 1987 |
Feldman RD, Austin RF, Fuoss PH, Dayem AH, Westerwick EH, Nakahara S, Boone T, Menéndez J, Pinczuk A, Valladares JP, Brennan S. Phase separation in Cd1−xZnxTe grown by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 5: 690-693. DOI: 10.1116/1.583806 |
0.366 |
|
| 1987 |
Menéndez J, Pinczuk A, Werder DJ, Sputz SK, Miller RC, Sivco DL, Cho AY. Large valence-band offset in strained-layer InxGa1-xAs-GaAs quantum wells Physical Review B. 36: 8165-8168. DOI: 10.1103/Physrevb.36.8165 |
0.391 |
|
| 1987 |
Menéndez J, Pinczuk A, Valladares JP, Feldman RD, Austin RF. Resonance Raman scattering in CdTe-ZnTe superlattices Applied Physics Letters. 50: 1101-1103. DOI: 10.1063/1.97931 |
0.406 |
|
| 1987 |
Meneńdez J, Pinczuk A, Werder DJ, Gossard AC, English JH, Chiu TH, Tsang WT. Light scattering determination of band offsets in GaAs (AlGa)As and GaSb (AlGa)Sb quantum wells: A comparative study Superlattices and Microstructures. 3: 163-166. DOI: 10.1016/0749-6036(87)90051-6 |
0.338 |
|
| 1987 |
Menéndez J, Pinczuk A, Werder DJ, Valladares JP, Chiu TH, Tsang WT. Band lineups at the GaSb-AlxGa1-xSb hetero-junction: Experimental evidence for a new common anion rule Solid State Communications. 61: 703-706. DOI: 10.1016/0038-1098(87)90720-4 |
0.325 |
|
| 1987 |
Menéndez J, Pinczuk A, Gossard AC, Lamont MG, Cerdeira F. Light scattering in GaAs parabolic quantum wells Solid State Communications. 61: 601-605. DOI: 10.1016/0038-1098(87)90369-3 |
0.38 |
|
| 1986 |
Sood AK, Menéndez J, Cardona M, Ploog K. Sood et al. respond. Physical Review Letters. 56: 1753. PMID 10032762 DOI: 10.1103/Physrevlett.56.1753 |
0.505 |
|
| 1986 |
Bevk J, Mannaerts JP, Feldman LC, Davidson BA, Lowe WP, Glass AM, Pearsall TP, Menendez J, Pinczuk A, Ourmazd A. Structure and Properties of Ultrathin Ge-Si Superlattices Mrs Proceedings. 67: 189-196. DOI: 10.1557/Proc-67-189 |
0.464 |
|
| 1986 |
Menéndez J. Summary Abstract: Light scattering determination of band offsets in semiconductor quantum wells Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4: 1041. DOI: 10.1116/1.583577 |
0.301 |
|
| 1986 |
Menéndez J, Pinczuk A, Werder DJ, Gossard AC, English JH. Light scattering determination of band offsets in GaAs-AlxGa1-xAs quantum wells Physical Review B. 33: 8863-8866. DOI: 10.1103/Physrevb.33.8863 |
0.356 |
|
| 1985 |
Sood AK, Menéndez J, Cardona M, Ploog K. Interface vibrational modes in GaAs-AlAs superlattices. Physical Review Letters. 54: 2115-2118. PMID 10031233 DOI: 10.1103/Physrevlett.54.2115 |
0.617 |
|
| 1985 |
Sood AK, Menéndez J, Cardona M, Ploog K. Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices. Physical Review Letters. 54: 2111-2114. PMID 10031232 DOI: 10.1103/Physrevlett.54.2111 |
0.599 |
|
| 1985 |
Menéndez J, Via L, Cardona M, Anastassakis E. Resonance Raman scattering in InSb: Deformation potentials and interference effects at the E1 gap. Physical Review. B, Condensed Matter. 32: 3966-3973. PMID 9937551 DOI: 10.1103/Physrevb.32.3966 |
0.468 |
|
| 1985 |
Sood AK, Menéndez J, Cardona M, Ploog K. Second-order Raman scattering by confined optical phonons and interface vibrational modes in GaAs-AlAs superlattices. Physical Review. B, Condensed Matter. 32: 1412-1414. PMID 9937179 DOI: 10.1103/Physrevb.32.1412 |
0.625 |
|
| 1985 |
Menéndez J, Cardona M, Vodopyanov LK. Resonance Raman scattering by LO phonons in CdxHg1-xTe at the E0+ Delta 0 gap. Physical Review. B, Condensed Matter. 31: 3705-3711. PMID 9936267 DOI: 10.1103/Physrevb.31.3705 |
0.443 |
|
| 1985 |
Menéndez J, Cardona M. Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs. Physical Review. B, Condensed Matter. 31: 3696-3704. PMID 9936266 DOI: 10.1103/Physrevb.31.3696 |
0.447 |
|
| 1985 |
Menendez J, Cardona M. Allowed and forbidden scattering by LO phonons: interference effects Pure and Applied Chemistry. 57: 181-185. DOI: 10.1351/Pac198557020181 |
0.405 |
|
| 1984 |
Menéndez J, Cardona M. Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects Physical Review B. 29: 2051-2059. DOI: 10.1103/Physrevb.29.2051 |
0.534 |
|
| 1984 |
Menéndez J, Höchst H. Study of the phase transition in heteroepitaxially grown films of αSn by Raman spectroscopy Thin Solid Films. 111: 375-379. DOI: 10.1016/0040-6090(84)90329-8 |
0.363 |
|
| 1983 |
Menendez J, Cardona M. Erratum: Interference between allowed and forbidden raman scattering by longitudinal-optical phonons in GaAs (Physical Review Letters (1983) 51, 19, (1814)) Physical Review Letters. 51. DOI: 10.1103/Physrevlett.51.1814 |
0.459 |
|
| 1983 |
Menéndez J, Cardona M. Interference Between Allowed and Forbidden Raman Scattering by Longitudinal-Optical Phonons in GaAs; Physical Review Letters. 51: 1297-1299. DOI: 10.1103/Physrevlett.51.1297 |
0.475 |
|
| Show low-probability matches. |
