| Year |
Citation |
Score |
| 2018 |
Bhuiyan MA, Zhou H, Chang S, Lou X, Gong X, Jiang R, Gong H, Zhang EX, Won C, Lim J, Lee J, Gordon RG, Reed RA, Fleetwood DM, Ye P, Ma T, et al. Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Ieee Transactions On Nuclear Science. 65: 46-52. DOI: 10.1109/Tns.2017.2774928 |
0.459 |
|
| 2018 |
Bhuiyan MA, Zhou H, Jiang R, Zhang EX, Fleetwood DM, Ye PD, Ma T. Charge Trapping in Al2O3/$\beta$ -Ga2O3-Based MOS Capacitors Ieee Electron Device Letters. 39: 1022-1025. DOI: 10.1109/Led.2018.2841899 |
0.515 |
|
| 2018 |
Gong N, Ma T. A Study of Endurance Issues in HfO 2 -Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation Ieee Electron Device Letters. 39: 15-18. DOI: 10.1109/Led.2017.2776263 |
0.464 |
|
| 2016 |
Chang SJ, Kang HS, Lee JH, Yang J, Bhuiyan M, Jo YW, Cui S, Ma TP. Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.044104 |
0.39 |
|
| 2016 |
Gong N, Ma T. Why Is FE–HfO 2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective Ieee Electron Device Letters. 37: 1123-1126. DOI: 10.1109/Led.2016.2593627 |
0.341 |
|
| 2015 |
Ni K, Zhang EX, Samsel IK, Schrimpf RD, Reed RA, Fleetwood DM, Sternberg AL, McCurdy MW, Ren S, Ma TP, Dong L, Zhang JY, Ye PD. Charge Collection Mechanisms in GaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2752-2759. DOI: 10.1109/Tns.2015.2495203 |
0.524 |
|
| 2013 |
Samsel IK, Zhang EX, Hooten NC, Funkhouser ED, Bennett WG, Reed RA, Schrimpf RD, McCurdy MW, Fleetwood DM, Weller RA, Vizkelethy G, Sun X, Ma TP, Saadat OI, Palacios T. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors Ieee Transactions On Nuclear Science. 60: 4439-4445. DOI: 10.1109/Tns.2013.2289383 |
0.586 |
|
| 2010 |
Reiner JW, Cui S, Liu Z, Wang M, Ahn CH, Ma TP. Inelastic electron tunneling spectroscopy study of thin gate dielectrics. Advanced Materials (Deerfield Beach, Fla.). 22: 2962-8. PMID 20354976 DOI: 10.1002/Adma.200904311 |
0.602 |
|
| 2002 |
Zhu WJ, Ma T, Tamagawa T, Kim J, Di Y. Current transport in metal/hafnium oxide/silicon structure Ieee Electron Device Letters. 23: 97-99. DOI: 10.1109/55.981318 |
0.332 |
|
| 2002 |
She M, King T, Hu C, Zhu W, Luo Z, Han J, Ma T. JVD silicon nitride as tunnel dielectric in p-channel flash memory Ieee Electron Device Letters. 23: 91-93. DOI: 10.1109/55.981316 |
0.516 |
|
| 2001 |
Melik-Martirosian A, Ma TP. Lateral profiling of interface traps and oxide charge in MOSFET devices: Charge pumping versus DCIV Ieee Transactions On Electron Devices. 48: 2303-2309. DOI: 10.1109/16.954469 |
0.451 |
|
| 2000 |
Campbell SA, He B, Smith R, Ma T, Hoilien N, Taylor C, Gladfelter WL. Group IVB oxides as high permittivity gate insulators Materials Research Society Symposium - Proceedings. 606: 23-32. DOI: 10.1557/Proc-606-23 |
0.398 |
|
| 2000 |
Wang XW, Luo ZJ, Ma T. High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric Ieee Transactions On Electron Devices. 47: 458-463. DOI: 10.1109/16.822294 |
0.412 |
|
| 1999 |
Shi Y, Wang X, Ma T. Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics Ieee Transactions On Electron Devices. 46: 362-368. DOI: 10.1109/16.740903 |
0.36 |
|
| 1998 |
Chen C, Ma T. Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's Ieee Transactions On Electron Devices. 45: 512-520. DOI: 10.1109/16.658688 |
0.599 |
|
| 1998 |
Lye W, Ma T, Barker RC, Hasegawa E, Hu Y, Kuehne J, Frystak D. Tunneling spectroscopy of the silicon metal-oxide-semiconductor system Characterization and Metrology For Ulsi Technology. 449: 261-265. DOI: 10.1063/1.56806 |
0.437 |
|
| 1997 |
Lye WK, Hasegawa E, Ma TP, Barker RC, Hu Y, Kuehne J, Frystak D. Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system Applied Physics Letters. 71: 2523-2525. DOI: 10.1063/1.120106 |
0.408 |
|
| 1994 |
Tsai M, Zhang B, Ma T, Wang LK. Random telegraph signals in accumulation-mode SOI/nMOSFETs Ieee Electron Device Letters. 15: 135-137. DOI: 10.1109/55.285405 |
0.358 |
|
| 1994 |
Tsai M, Ma T. The impact of device scaling on the current fluctuations in MOSFET's Ieee Transactions On Electron Devices. 41: 2061-2068. DOI: 10.1109/16.333823 |
0.427 |
|
| 1992 |
Zhang B, Yoshino A, Ma TP. Single-Transistor-Latch-Induced Degradation of Front- and Back-Channel Thin-Film SOI Transistors Ieee Electron Device Letters. 13: 282-284. DOI: 10.1109/55.145054 |
0.396 |
|
| 1992 |
Balasinski A, Chen W, Ma T. Effects of combined X-ray irradiation and hot-electron injection on NMOS transistors Journal of Electronic Materials. 21: 737-743. DOI: 10.1007/Bf02655604 |
0.394 |
|
| 1991 |
Nishioka Y, Itoga T, Ohyu K, Ma T. Improving hot-electron hardness of narrow channel MOSFETs by fluorine implantation Solid-State Electronics. 34: 1197-1200. DOI: 10.1016/0038-1101(91)90057-6 |
0.365 |
|
| 1988 |
Kaya C, Ma TP, Chen TC, Barker RC. Properties of Si-rich SiNx:H films prepared by plasma-enhanced chemical vapor deposition Journal of Applied Physics. 64: 3949-3957. DOI: 10.1063/1.341352 |
0.33 |
|
| 1987 |
Fedynyshyn TH, Grynkewich GW, Hook TB, Liu M, Ma T. The Effect of Aluminum vs. Photoresist Masking on the Etching Rates of Silicon and Silicon Dioxide in CF 4 / O 2 Plasmas Journal of the Electrochemical Society. 134: 206-209. DOI: 10.1149/1.2100408 |
0.309 |
|
| 1987 |
Nishioka Y, Da Silva EF, Ma TP. Time-Dependent Evolution of Interface Traps in Hot-Electron Damaged Metal/SiO<inf>2</inf>/Si Capacitors Ieee Electron Device Letters. 8: 566-568. DOI: 10.1109/Edl.1987.26730 |
0.424 |
|
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