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James G. Champlain, Ph.D. - Publications

Affiliations: 
2002 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Deen DA, Champlain JG, Koester SJ. Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4818754  0.403
2012 Champlain JG, Magno R, Park D, Newman HS, Brad Boos J. High-frequency, 6.2 Å pN heterojunction diodes Solid-State Electronics. 67: 105-108. DOI: 10.1016/j.sse.2011.07.010  0.372
2011 Magno R, Champlain JG, Newman HS, Park D. Antimonide-based pN terahertz mixer diodes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3549885  0.464
2011 Deen DA, Champlain JG. High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman's method revised Applied Physics Letters. 99. DOI: 10.1063/1.3615279  0.381
2010 Champlain JG, Magno R, Bass R, Park D, Boos JB. In0.69Al0.31As0.41Sb0.59/ In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers Electronics Letters. 46: 1333-1335. DOI: 10.1049/el.2010.1727  0.522
2009 Deen DA, Champlain JG, Storm DF, Meyer DJ, Binari SC, Eddy CR, Bass R. Modeling the small signal characteristics of an ALD Al2O 3 insulated-gate AlN/GaN high electron mobility transistor 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378281  0.327
2009 Boos JB, Bennett BR, Papanicolaou NA, Ancona MG, Champlain JG, Park D, Kruppa W, Weaver BD, Bass R, Shanabrook BV. Sb-based n-and p-channel HFETs for high-speed, low-power applications Device Research Conference - Conference Digest, Drc. 159-162. DOI: 10.1109/DRC.2009.5354965  0.303
2009 Bennett BR, Ancona MG, Champlain JG, Papanicolaou NA, Boos JB. Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits Journal of Crystal Growth. 312: 37-40. DOI: 10.1016/j.jcrysgro.2009.09.047  0.472
2008 Boos JB, Bennett BR, Papanicolaou NA, Ancona MG, Champlain JG, Chou YC, Lange MD, Yang JM, Bass R, Park D, Shanabrook BY. Sb-based n-and p-channel heterostructure FETs for high-speed, low-power applications Ieice Transactions On Electronics. 1050-1057. DOI: 10.1093/ietele/e91-c.7.1050  0.431
2008 Magno R, Champlain JG, Newman HS, Ancona MG, Culbertson JC, Bennett BR, Boos JB, Park D. Antimonide-based diodes for terahertz mixers Applied Physics Letters. 92. DOI: 10.1063/1.2946658  0.339
2008 Champlain JG, Magno R, Ancona M, Newman HS, Brad Boos J. InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material Solid-State Electronics. DOI: 10.1016/j.sse.2008.08.005  0.406
2007 Champlain JG, Magno R, Boos JB. Low resistance, unannealed ohmic contacts to n-type InAs 0.66Sb0.34 Electronics Letters. 43: 1315-1317. DOI: 10.1049/el:20072224  0.375
2007 Boos JB, Bennett BR, Papanicolaou NA, Ancona MG, Champlain JG, Bass R, Shanabrook BV. High mobility p-channel HFETs using strained Sb-based materials Electronics Letters. 43: 834-835. DOI: 10.1049/el:20071305  0.33
2007 Champlain JG, Magno R, Park D, Newman HS, Boos JB. 6.2 Å Sb-based pN diodes for high frequency applications Irmmw-Thz2007 - Conference Digest of the Joint 32nd International Conference On Infrared and Millimetre Waves, and 15th International Conference On Terahertz Electronics. 855-856.  0.572
2006 Magno R, Glaser ER, Tinkham BP, Champlain JG, Boos JB, Ancona MG, Campbell PM. Narrow band gap InGaSb, InAlAsSb alloys for electronic devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1622-1625. DOI: 10.1116/1.2201448  0.351
2002 White BD, Bataiev M, Brillson LJ, Choi BK, Fleetwood DM, Schrimpf RD, Pantelides ST, Dettmer RW, Schaff WJ, Champlain JG, Mishra UK. Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy Ieee Transactions On Nuclear Science. 49: 2695-2701. DOI: 10.1109/Tns.2002.805427  0.375
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