Yuri Ebata, Ph.D. - Publications

Affiliations: 
2013 Polymer Science & Engineering University of Massachusetts, Amherst, Amherst, MA 
Area:
Materials Science, Biomechanics

6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Ebata Y, Crosby AJ. Wrinkling membranes with compliant boundaries. Soft Matter. 10: 1963-8. PMID 24652162 DOI: 10.1039/C3Sm52750F  0.42
2012 Ebata Y, Croll AB, Crosby AJ. Wrinkling and strain localizations in polymer thin films Soft Matter. 8: 9086-9091. DOI: 10.1039/C2Sm25859E  0.417
2006 Ohmi H, Kakiucht H, Yasutake K, Nakahama Y, Ebata Y, Yoshii K, Mori Y. Influence of H2/SiH4 ratio on the deposition rate and morphology of polycrystalline silicon films deposited by atmospheric pressure plasma chemical vapor deposition Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 3581-3586. DOI: 10.1143/JJAP.45.3581  0.316
2005 Kakiuchi H, Matsumoto M, Ebata Y, Ohmi H, Yasutake K, Yoshii K, Mori Y. Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition Journal of Non-Crystalline Solids. 351: 741-747. DOI: 10.1016/j.jnoncrysol.2004.08.271  0.333
2002 Mori Y, Kakiuchi H, Yoshii K, Yasutake K, Matsumoto M, Ebata Y. Ultrahigh-rate deposition of amorphous silicon films for solar cells by atmospheric pressure plasma CVD | Ultrahigh-rate deposition of amorphous silicon films for solar cells by atmospheric pressure plasma CVD Seimitsu Kogaku Kaishi/Journal of the Japan Society For Precision Engineering. 68: 1077-1081.  0.381
2001 Ishihara M, Manabe T, Kumagai T, Nakamura T, Fujiwara S, Ebata Y, Shikata SI, Nakahata H, Hachigo A, Koga Y. Synthesis and surface acoustic wave property of aluminum nitride thin films fabricated on silicon and diamond substrates using the sputtering method Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40: 5065-5068.  0.418
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