Year |
Citation |
Score |
2023 |
Cai J, Sun Z, Wu P, Tripathi R, Lan HY, Kong J, Chen Z, Appenzeller J. High-Performance Complementary Circuits from Two-Dimensional MoTe. Nano Letters. PMID 37976291 DOI: 10.1021/acs.nanolett.3c03184 |
0.304 |
|
2022 |
Sun Z, Pang CS, Wu P, Hung TYT, Li MY, Liew SL, Cheng CC, Wang H, Wong HP, Li LJ, Radu I, Chen Z, Appenzeller J. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS. Acs Nano. PMID 36094410 DOI: 10.1021/acsnano.2c05902 |
0.381 |
|
2021 |
Pang CS, Zhou R, Liu X, Wu P, Hung TYT, Guo S, Zaghloul ME, Krylyuk S, Davydov AV, Appenzeller J, Chen Z. Mobility Extraction in 2D Transition Metal Dichalcogenide Devices-Avoiding Contact Resistance Implicated Overestimation. Small (Weinheim An Der Bergstrasse, Germany). e2100940. PMID 34110675 DOI: 10.1002/smll.202100940 |
0.395 |
|
2021 |
Wu P, Appenzeller J. Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor without a Ferroelectric Component. Acs Nano. PMID 33705109 DOI: 10.1021/acsnano.0c10344 |
0.339 |
|
2020 |
Shen T, Ostwal V, Camsari KY, Appenzeller J. Demonstration of a pseudo-magnetization based simultaneous write and read operation in a CoFeB/Pb(MgNb)TiO heterostructure. Scientific Reports. 10: 10791. PMID 32612280 DOI: 10.1038/S41598-020-67776-Y |
0.31 |
|
2020 |
Ostwal V, Shen T, Appenzeller J. Efficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr Ge Te. Advanced Materials (Deerfield Beach, Fla.). e1906021. PMID 31930776 DOI: 10.1002/Adma.201906021 |
0.325 |
|
2019 |
Zhang F, Zhang H, Krylyuk S, Milligan CA, Zhu Y, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J. Electric-field induced structural transition in vertical MoTe- and MoWTe-based resistive memories. Nature Materials. 18: 55-61. PMID 30542093 DOI: 10.1038/S41563-018-0234-Y |
0.372 |
|
2019 |
Wu P, Appenzeller J. Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents Ieee Electron Device Letters. 40: 981-984. DOI: 10.1109/Led.2019.2909176 |
0.452 |
|
2019 |
Wu P, Appenzeller J. Toward CMOS like devices from two-dimensional channel materials Apl Materials. 7: 100701. DOI: 10.1063/1.5115147 |
0.464 |
|
2018 |
Wu P, Ameen T, Zhang H, Bendersky LA, Ilatikhameneh H, Klimeck G, Rahman R, Davydov AV, Appenzeller J. Complementary Black Phosphorus Tunneling Field-Effect Transistors. Acs Nano. PMID 30563322 DOI: 10.1021/Acsnano.8B06441 |
0.513 |
|
2018 |
Ostwal V, Debashis P, Faria R, Chen Z, Appenzeller J. Spin-torque devices with hard axis initialization as Stochastic Binary Neurons. Scientific Reports. 8: 16689. PMID 30420701 DOI: 10.1038/S41598-018-34996-2 |
0.328 |
|
2018 |
Stampfer B, Zhang F, Illarionov YY, Knobloch T, Wu P, Waltl M, Grill A, Appenzeller J, Grasser T. Characterization of Single Defects in Ultra-Scaled MoS Field-Effect Transistors. Acs Nano. PMID 29878746 DOI: 10.1021/Acsnano.8B00268 |
0.44 |
|
2018 |
Chen C, Ameen TA, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs Ieee Transactions On Electron Devices. 65: 4614-4621. DOI: 10.1109/Ted.2018.2862408 |
0.394 |
|
2018 |
Zhang F, Lee C, Robinson JA, Appenzeller J. Exploration of channel width scaling and edge states in transition metal dichalcogenides Nano Research. 11: 1768-1774. DOI: 10.1007/S12274-017-1794-X |
0.463 |
|
2017 |
Zhu Y, Zhou R, Zhang F, Appenzeller J. Vertical charge transport through transition metal dichalcogenides - a quantitative analysis. Nanoscale. PMID 29168520 DOI: 10.1039/C7Nr05069K |
0.408 |
|
2017 |
Prakash A, Ilatikhameneh H, Wu P, Appenzeller J. Understanding contact gating in Schottky barrier transistors from 2D channels. Scientific Reports. 7: 12596. PMID 28974712 DOI: 10.1038/S41598-017-12816-3 |
0.449 |
|
2017 |
Zhou R, Ostwal V, Appenzeller J. Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions. Nano Letters. PMID 28718653 DOI: 10.1021/Acs.Nanolett.7B01547 |
0.391 |
|
2017 |
Prakash A, Appenzeller J. Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors. Acs Nano. PMID 28191930 DOI: 10.1021/Acsnano.6B07360 |
0.446 |
|
2017 |
Zhu Y, Zhou R, Wang L, Wong SS, Appenzeller J. Utilizing Electrical Characteristics of Individual Nanotube Devices to Study the Charge Transfer between CdSe Quantum Dots and Double-Walled Nanotubes Acs Energy Letters. 2: 717-725. DOI: 10.1021/Acsenergylett.7B00023 |
0.375 |
|
2016 |
Müller MR, Salazar R, Fathipour S, Xu H, Kallis K, Künzelmann U, Seabaugh A, Appenzeller J, Knoch J. Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure. Nanoscale Research Letters. 11: 512. PMID 27878575 DOI: 10.1186/S11671-016-1728-7 |
0.463 |
|
2016 |
Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure. Nano Letters. PMID 27494551 DOI: 10.1021/Acs.Nanolett.6B01853 |
0.331 |
|
2016 |
Wang L, Han J, Sundahl B, Thornton S, Zhu Y, Zhou R, Jaye C, Liu H, Li ZQ, Taylor GT, Fischer DA, Appenzeller J, Harrison RJ, Wong SS. Ligand-induced dependence of charge transfer in nanotube-quantum dot heterostructures. Nanoscale. PMID 27368081 DOI: 10.1039/C6Nr03091B |
0.32 |
|
2016 |
Shen T, Penumatcha AV, Appenzeller J. Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors. Acs Nano. PMID 27043387 DOI: 10.1021/Acsnano.6B01149 |
0.391 |
|
2016 |
Ilatikhameneh H, Salazar RB, Klimeck G, Rahman R, Appenzeller J. From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling Ieee Transactions On Electron Devices. 63: 2871-2878. DOI: 10.1109/Ted.2016.2565582 |
0.375 |
|
2016 |
Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Design rules for high performance tunnel transistors from 2-D materials Ieee Journal of the Electron Devices Society. 4: 260-265. DOI: 10.1109/Jeds.2016.2568219 |
0.43 |
|
2015 |
Penumatcha AV, Salazar RB, Appenzeller J. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model. Nature Communications. 6: 8948. PMID 26563458 DOI: 10.1038/Ncomms9948 |
0.504 |
|
2015 |
Zhu Y, Appenzeller J. On the Current Drive Capability of Low Dimensional Semiconductors: 1D versus 2D. Nanoscale Research Letters. 10: 425. PMID 26515073 DOI: 10.1186/S11671-015-1134-6 |
0.356 |
|
2015 |
Zhang F, Appenzeller J. Tunability of short-channel effects in MoS2 field-effect devices. Nano Letters. 15: 301-6. PMID 25545046 DOI: 10.1021/Nl503586V |
0.458 |
|
2015 |
Ilatikhameneh H, Rahman R, Appenzeller J, Klimeck G. Electrically doped WTe2 tunnel transistors International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 270-272. DOI: 10.1109/SISPAD.2015.7292311 |
0.325 |
|
2015 |
Ilatikhameneh H, Ameen TA, Klimeck G, Appenzeller J, Rahman R. Dielectric Engineered Tunnel Field-Effect Transistor Ieee Electron Device Letters. 36: 1097-1100. DOI: 10.1109/Led.2015.2474147 |
0.424 |
|
2015 |
Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Scaling Theory of Electrically Doped 2D Transistors Ieee Electron Device Letters. 36: 726-728. DOI: 10.1109/Led.2015.2436356 |
0.394 |
|
2015 |
Ilatikhameneh H, Tan Y, Novakovic B, Klimeck G, Rahman R, Appenzeller J. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 12-18. DOI: 10.1109/Jxcdc.2015.2423096 |
0.475 |
|
2015 |
Salazar RB, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations Journal of Applied Physics. 118. DOI: 10.1063/1.4934682 |
0.441 |
|
2015 |
Wang L, Han J, Zhu Y, Zhou R, Jaye C, Liu H, Li ZQ, Taylor GT, Fischer DA, Appenzeller J, Wong SS. Probing the Dependence of Electron Transfer on Size and Coverage in Carbon Nanotube-Quantum Dot Heterostructures Journal of Physical Chemistry C. 119: 26327-26338. DOI: 10.1021/Acs.Jpcc.5B08681 |
0.339 |
|
2014 |
Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567 |
0.605 |
|
2014 |
Lin CC, Gao Y, Penumatcha AV, Diep VQ, Appenzeller J, Chen Z. Improvement of spin transfer torque in asymmetric graphene devices. Acs Nano. 8: 3807-12. PMID 24635654 DOI: 10.1021/Nn500533B |
0.37 |
|
2014 |
Das S, Prakash A, Salazar R, Appenzeller J. Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides. Acs Nano. 8: 1681-9. PMID 24392853 DOI: 10.1021/Nn406603H |
0.583 |
|
2014 |
Prakash A, Das S, Mehta R, Chen Z, Appenzeller J. Ionic gated WSe2 FETs: Towards transparent Schottky barriers Device Research Conference - Conference Digest, Drc. 129-130. DOI: 10.1109/DRC.2014.6872331 |
0.572 |
|
2014 |
Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527 |
0.446 |
|
2013 |
Lin CC, Penumatcha AV, Gao Y, Diep VQ, Appenzeller J, Chen Z. Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field. Nano Letters. 13: 5177-81. PMID 24127734 DOI: 10.1021/Nl402547M |
0.33 |
|
2013 |
Das S, Appenzeller J. Where does the current flow in two-dimensional layered systems? Nano Letters. 13: 3396-402. PMID 23802773 DOI: 10.1021/Nl401831U |
0.566 |
|
2013 |
Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54. PMID 23464859 DOI: 10.1021/Nl3047078 |
0.441 |
|
2013 |
Das S, Chen HY, Penumatcha AV, Appenzeller J. High performance multilayer MoS2 transistors with scandium contacts. Nano Letters. 13: 100-5. PMID 23240655 DOI: 10.1021/Nl303583V |
0.677 |
|
2013 |
Razavieh A, Janes DB, Appenzeller J. Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit Ieee Transactions On Electron Devices. 60: 2071-2076. DOI: 10.1109/Ted.2013.2259238 |
0.375 |
|
2013 |
Das S, Appenzeller J. Evaluating the scalability of multilayer MoS2 transistors Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2013.6633839 |
0.448 |
|
2013 |
Das S, Appenzeller J. WSe2 field effect transistors with enhanced ambipolar characteristics Applied Physics Letters. 103. DOI: 10.1063/1.4820408 |
0.616 |
|
2013 |
Chen H, Appenzeller J. Coulomb drag between in-plane graphene double ribbons and the impact of the dielectric constant Nano Research. 6: 897-905. DOI: 10.1007/S12274-013-0366-Y |
0.58 |
|
2013 |
Das S, Appenzeller J. Cover Picture: Screening and interlayer coupling in multilayer MoS2(Phys. Status Solidi RRL 4/2013) Physica Status Solidi (Rrl) - Rapid Research Letters. 7: n/a-n/a. DOI: 10.1002/Pssr.201390010 |
0.44 |
|
2013 |
Das S, Appenzeller J. Screening and interlayer coupling in multilayer MoS2 Physica Status Solidi - Rapid Research Letters. 7: 268-273. DOI: 10.1002/Pssr.201307015 |
0.575 |
|
2012 |
Salazar RB, Mehrotra SR, Klimeck G, Singh N, Appenzeller J. Observation of 1D behavior in Si nanowires: toward high-performance TFETs. Nano Letters. 12: 5571-5. PMID 23030672 DOI: 10.1021/Nl3025664 |
0.379 |
|
2012 |
Zhao Y, Candebat D, Delker C, Zi Y, Janes D, Appenzeller J, Yang C. Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors. Nano Letters. 12: 5331-6. PMID 22950905 DOI: 10.1021/Nl302684S |
0.488 |
|
2012 |
Chen HY, Appenzeller J. Graphene-based frequency tripler. Nano Letters. 12: 2067-70. PMID 22452648 DOI: 10.1021/nl300230k |
0.534 |
|
2012 |
Zi Y, Zhao Y, Candebat D, Appenzeller J, Yang C. Synthesis of antimony-based nanowires using the simple vapor deposition method. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 13: 2585-8. PMID 22438329 DOI: 10.1002/Cphc.201101042 |
0.343 |
|
2012 |
Knoch J, Chen Z, Appenzeller J. Properties of metal-graphene contacts Ieee Transactions On Nanotechnology. 11: 513-519. DOI: 10.1109/Tnano.2011.2178611 |
0.456 |
|
2012 |
Chen HY, Appenzeller J. On the voltage gain of complementary graphene voltage amplifiers with optimized doping Ieee Electron Device Letters. 33: 1462-1464. DOI: 10.1109/Led.2012.2207084 |
0.584 |
|
2012 |
Das S, Appenzeller J. On the scaling behavior of organic ferroelectric copolymer PVDF-TrFE for memory application Organic Electronics: Physics, Materials, Applications. 13: 3326-3332. DOI: 10.1016/J.Orgel.2012.09.036 |
0.554 |
|
2011 |
Das S, Appenzeller J. FeTRAM. An organic ferroelectric material based novel random access memory cell. Nano Letters. 11: 4003-7. PMID 21859101 DOI: 10.1021/Nl2023993 |
0.519 |
|
2011 |
Zhao Y, Smith JT, Appenzeller J, Yang C. Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells. Nano Letters. 11: 1406-11. PMID 21417251 DOI: 10.1021/Nl1031138 |
0.311 |
|
2011 |
Sui Y, Low T, Lundstrom M, Appenzeller J. Signatures of disorder in the minimum conductivity of graphene. Nano Letters. 11: 1319-22. PMID 21329334 DOI: 10.1021/Nl104399Z |
0.389 |
|
2011 |
Das S, Appenzeller J. On the importance of bandgap formation in graphene for analog device applications Ieee Transactions On Nanotechnology. 10: 1093-1098. DOI: 10.1109/Tnano.2011.2109007 |
0.562 |
|
2011 |
Berdebes D, Low T, Sui Y, Appenzeller J, Lundstrom MS. Substrate gating of contact resistance in graphene transistors Ieee Transactions On Electron Devices. 58: 3925-3932. DOI: 10.1109/Ted.2011.2163800 |
0.426 |
|
2011 |
Smith JT, Sandow C, Das S, Minamisawa RA, Mantl S, Appenzeller J. Silicon nanowire tunneling field-effect transistor arrays: Improving subthreshold performance using excimer laser annealing Ieee Transactions On Electron Devices. 58: 1822-1829. DOI: 10.1109/Ted.2011.2135355 |
0.581 |
|
2011 |
Das S, Appenzeller J. An all-graphene radio frequency low noise amplifier Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940628 |
0.413 |
|
2011 |
Smith JT, Das S, Appenzeller J. Broken-gap tunnel MOSFET: A constant-slope Sub-60-mV/decade transistor Ieee Electron Device Letters. 32: 1367-1369. DOI: 10.1109/Led.2011.2162220 |
0.613 |
|
2011 |
Chen HY, Appenzeller J. Complementary-type graphene inverters operating at room-temperature Device Research Conference - Conference Digest, Drc. 33-34. DOI: 10.1109/DRC.2011.5994408 |
0.518 |
|
2010 |
Knoch J, Appenzeller J. Modeling of high-performance p-type IIIV heterojunction tunnel FETs Ieee Electron Device Letters. 31: 305-307. DOI: 10.1109/Led.2010.2041180 |
0.321 |
|
2009 |
Sui Y, Appenzeller J. Screening and interlayer coupling in multilayer graphene field-effect transistors. Nano Letters. 9: 2973-7. PMID 19639984 DOI: 10.1021/Nl901396G |
0.391 |
|
2009 |
Low T, Hong S, Appenzeller J, Datta S, Lundstrom MS. Conductance asymmetry of graphene p-n junction Ieee Transactions On Electron Devices. 56: 1292-1299. DOI: 10.1109/Ted.2009.2017646 |
0.38 |
|
2009 |
Appenzeller J. Nanowire electronics Esscirc 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 73-75. DOI: 10.1109/ESSCIRC.2009.5325929 |
0.326 |
|
2009 |
Candebat D, Zhao Y, Sandow C, Koshel B, Yang C, Appenzeller J. InSb nanowire field-effect transistors- Electrical characterization and material analysis Device Research Conference - Conference Digest, Drc. 13-14. DOI: 10.1109/DRC.2009.5354959 |
0.373 |
|
2009 |
Sui Y, Appenzeller J. Multi-layer graphene field-effect transistors for improved device performance Device Research Conference - Conference Digest, Drc. 199-200. DOI: 10.1109/DRC.2009.5354950 |
0.321 |
|
2009 |
Low T, Appenzeller J. Electronic transport properties of a tilted graphene p-n junction Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.155406 |
0.398 |
|
2008 |
Gunawan O, Sekaric L, Majumdar A, Rooks M, Appenzeller J, Sleight JW, Guha S, Haensch W. Measurement of carrier mobility in silicon nanowires. Nano Letters. 8: 1566-71. PMID 18444687 DOI: 10.1021/Nl072646W |
0.454 |
|
2008 |
Appenzeller J, Knoch J, Björk MT, Riel H, Schmid H, Riess W. Toward nanowire electronics Ieee Transactions On Electron Devices. 55: 2827-2845. DOI: 10.1109/Ted.2008.2008011 |
0.461 |
|
2008 |
Knoch J, Riess W, Appenzeller J. Outperforming the conventional scaling rules in the quantum-capacitance limit Ieee Electron Device Letters. 29: 372-374. DOI: 10.1109/Led.2008.917816 |
0.435 |
|
2008 |
Chen Z, Farmer D, Xu S, Gordon R, Avouris P, Appenzeller J. Externally assembled gate-all-around carbon nanotube field-effect transistor Ieee Electron Device Letters. 29: 183-185. DOI: 10.1109/Led.2007.914069 |
0.481 |
|
2008 |
Appenzeller J. Carbon nanotubes for high-performance electronics - Progress and prospect Proceedings of the Ieee. 96: 201-211. DOI: 10.1109/JPROC.2007.911051 |
0.324 |
|
2008 |
Chen Z, Appenzeller J. Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796737 |
0.348 |
|
2008 |
Knoch J, Appenzeller J. Tunneling phenomena in carbon nanotube field-effect transistors Physica Status Solidi (a) Applications and Materials Science. 205: 679-694. DOI: 10.1002/Pssa.200723528 |
0.478 |
|
2007 |
Lin Y, Chen Z, Appenzeller J, Solomon PM, Avouris P. Advances in Carbon Nanotube Devices and Circuits The Japan Society of Applied Physics. 2007: 1164-1165. DOI: 10.7567/Ssdm.2007.J-9-2 |
0.381 |
|
2007 |
Appenzeller J, Lin YM, Knoch J, Chen Z, Avouris P. 1/f noise in carbon nanotube Devices - On the impact of contacts and device geometry Ieee Transactions On Nanotechnology. 6: 368-373. DOI: 10.1109/Tnano.2007.892052 |
0.385 |
|
2007 |
Indlekofer KM, Knoch J, Appenzeller J. Understanding Coulomb effects in nanoscale Schottky-barrier-FETs Ieee Transactions On Electron Devices. 54: 1502-1509. DOI: 10.1109/Ted.2007.895235 |
0.391 |
|
2007 |
Zhang M, Knoch J, Appenzeller J, Mantl S. Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs Ieee Electron Device Letters. 28: 223-225. DOI: 10.1109/Led.2007.891258 |
0.386 |
|
2007 |
Chen Z, Appenzeller J, Solomon PM, Lin YM, Avouris P. Gate work function engineering for nanotube-based circuits Digest of Technical Papers - Ieee International Solid-State Circuits Conference. DOI: 10.1109/ISSCC.2007.373591 |
0.302 |
|
2007 |
Knoch J, Mantl S, Appenzeller J. Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices Solid-State Electronics. 51: 572-578. DOI: 10.1016/J.Sse.2007.02.001 |
0.428 |
|
2007 |
Lin YM, Appenzeller J, Chen Z, Avouris P. Electrical transport and 1 / f noise in semiconducting carbon nanotubes Physica E: Low-Dimensional Systems and Nanostructures. 37: 72-77. DOI: 10.1016/J.Physe.2006.07.008 |
0.393 |
|
2007 |
Knoch J, Zhang M, Appenzeller J, Mantl S. Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors Applied Physics a: Materials Science and Processing. 87: 351-357. DOI: 10.1007/S00339-007-3868-1 |
0.447 |
|
2006 |
Tutuc E, Appenzeller J, Reuter MC, Guha S. Realization of a linear germanium nanowire p-n junction. Nano Letters. 6: 2070-4. PMID 16968027 DOI: 10.1021/Nl061338F |
0.369 |
|
2006 |
Lin YM, Appenzeller J, Knoch J, Chen Z, Avouris P. Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes. Nano Letters. 6: 930-6. PMID 16683828 DOI: 10.1021/Nl052528D |
0.387 |
|
2006 |
Chen Z, Appenzeller J, Lin YM, Sippel-Oakley J, Rinzler AG, Tang J, Wind SJ, Solomon PM, Avouris P. An integrated logic circuit assembled on a single carbon nanotube. Science (New York, N.Y.). 311: 1735. PMID 16556834 DOI: 10.1126/Science.1122797 |
0.431 |
|
2006 |
Knoch J, Zhang M, Mantl S, Appenzeller J. On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs Ieee Transactions On Electron Devices. 53: 1669-1674. DOI: 10.1109/Ted.2006.877262 |
0.425 |
|
2006 |
Appenzeller J, Knoch J, Tutuc E, Reuter M, Guha S. Dual-gate silicon nanowire transistors with nickel silicide contacts Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346842 |
0.363 |
|
2006 |
Indlekofer KM, Knoch J, Appenzeller J. Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.113310 |
0.377 |
|
2006 |
Rodriguez-Morales F, Zannoni R, Nicholson J, Fischetti M, Yngvesson KS, Appenzeller J. Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube Applied Physics Letters. 89. DOI: 10.1063/1.2337863 |
0.325 |
|
2005 |
Chen Z, Appenzeller J, Knoch J, Lin YM, Avouris P. The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors. Nano Letters. 5: 1497-502. PMID 16178264 DOI: 10.1021/Nl0508624 |
0.442 |
|
2005 |
Lin YM, Appenzeller J, Knoch J, Avouris P. High-performance carbon nanotube field-effect transistor with tunable polarities Ieee Transactions On Nanotechnology. 4: 481-489. DOI: 10.1109/Tnano.2005.851427 |
0.488 |
|
2005 |
Appenzeller J, Lin YM, Knoch J, Chen Z, Avouris P. Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design Ieee Transactions On Electron Devices. 52: 2568-2576. DOI: 10.1109/Ted.2005.859654 |
0.454 |
|
2005 |
Lin YM, Appenzeller J, Chen Z, Chen ZG, Cheng HM, Avouris P. High-performance dual-gate carbon nanotube FETs with 40-nm gate length Ieee Electron Device Letters. 26: 823-825. DOI: 10.1109/Led.2005.857704 |
0.42 |
|
2005 |
Knoch J, Appenzeller J. A novel concept for field-effect transistors - The tunneling carbon nanotube FET Device Research Conference - Conference Digest, Drc. 2005: 153-156. DOI: 10.1109/DRC.2005.1553099 |
0.313 |
|
2005 |
Lin YM, Appenzeller J, Chen Z, Chen ZG, Cheng HM, Avouris P. Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor Device Research Conference - Conference Digest, Drc. 2005: 113-114. DOI: 10.1109/DRC.2005.1553081 |
0.368 |
|
2005 |
Indlekofer KM, Knoch J, Appenzeller J. Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.125308 |
0.423 |
|
2005 |
Knoch J, Zhang M, Zhao QT, Lenk S, Mantl S, Appenzeller J. Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2150581 |
0.478 |
|
2005 |
Singh DV, Jenkins KA, Appenzeller J. Direct measurements of frequency response of carbon nanotube field effect transistors Electronics Letters. 41: 280-282. DOI: 10.1049/El:20057528 |
0.347 |
|
2005 |
Knoch J, Mantl S, Appenzeller J. Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts Solid-State Electronics. 49: 73-76. DOI: 10.1016/J.Sse.2004.07.002 |
0.478 |
|
2004 |
Singh DV, Jenkins KA, Appenzeller J, Neumayer D, Grill A, Wong HSP. Frequency response of top-gated carbon nanotube field-effect transistors Ieee Transactions On Nanotechnology. 3: 383-387. DOI: 10.1109/Tnano.2004.828577 |
0.337 |
|
2004 |
Frank DJ, Appenzeller J. High-Frequency Response in Carbon Nanotube Field-Effect Transistors Ieee Electron Device Letters. 25: 34-36. DOI: 10.1109/Led.2003.821589 |
0.328 |
|
2004 |
Lin YM, Appenzeller J, Avouris P. Novel structures enabling bulk switching in carbon nanotube FETs Device Research Conference - Conference Digest, Drc. 133-134. DOI: 10.1109/DRC.2004.1367820 |
0.341 |
|
2004 |
Appenzeller J, Lin YM, Knoch J, Avouris P. Band-to-band tunneling in carbon nanotube field-effect transistors Physical Review Letters. 93. DOI: 10.1103/Physrevlett.93.196805 |
0.431 |
|
2004 |
Appenzeller J, Knoch J, Radosavljević M, Avouris P. Multimode transport in schottky-barrier carbon-nanotube field-effect transistors Physical Review Letters. 92: 226802-1. DOI: 10.1103/Physrevlett.92.226802 |
0.453 |
|
2004 |
Appenzeller J, Radosavljević M, Knoch J, Avouris P. Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors Physical Review Letters. 92: 483011-483014. DOI: 10.1103/Physrevlett.92.048301 |
0.384 |
|
2004 |
Hunger T, Lengeler B, Appenzeller J. Transport in ropes of carbon nanotubes: Contact barriers and Luttinger liquid theory Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.195406 |
0.382 |
|
2004 |
Radosavljević M, Appenzeller J, Avouris P, Knoch J. High performance of potassium n-doped carbon nanotube field-effect transistors Applied Physics Letters. 84: 3693-3695. DOI: 10.1063/1.1737062 |
0.501 |
|
2004 |
Lin YM, Appenzeller J, Avouris P. Ambipolar-to-unipolar conversion of carbon nanotube transistors by gate structure engineering Nano Letters. 4: 947-950. DOI: 10.1021/Nl049745J |
0.459 |
|
2004 |
Lin YM, Appenzeller J, Avouris P. Novel carbon nanotube FET design with tunable polarity Technical Digest - International Electron Devices Meeting, Iedm. 687-690. |
0.36 |
|
2003 |
Wind SJ, Appenzeller J, Avouris P. Lateral scaling in carbon-nanotube field-effect transistors. Physical Review Letters. 91: 058301. PMID 12906636 DOI: 10.1103/Physrevlett.91.058301 |
0.479 |
|
2003 |
Wind SJ, Radosavljević M, Appenzeller J, Avouris P. Transistor structures for the study of scaling in carbon nanotubes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2856-2859. DOI: 10.1116/1.1624260 |
0.465 |
|
2003 |
Avouris P, Appenzeller J, Martel R, Wind SJ. Carbon nanotube electronics Proceedings of the Ieee. 91: 1772-1783. DOI: 10.1109/JPROC.2003.818338 |
0.344 |
|
2003 |
Appenzeller J, Knoch J, Avouris P. Carbon nanotube field-effect transistors - An example of an ultra-thin body Schottky barrier device Device Research Conference - Conference Digest, Drc. 2003: 167-170. DOI: 10.1109/DRC.2003.1226919 |
0.321 |
|
2003 |
Radosavljević M, Appenzeller J, Derycke V, Martel R, Avouris P, Loiseau A, Cochon JL, Pigache D. Electrical properties and transport in boron nitride nanotubes Applied Physics Letters. 82: 4131-4133. DOI: 10.1063/1.1581370 |
0.502 |
|
2003 |
Wong HSP, Appenzeller J, Derycke V, Martel R, Wind S, Avouris P. Carbon nanotube field effect transistors - Fabrication, device physics, and circuit implications Digest of Technical Papers - Ieee International Solid-State Circuits Conference. |
0.323 |
|
2002 |
Appenzeller J, Knoch J, Derycke V, Martel R, Wind S, Avouris P. Field-modulated carrier transport in carbon nanotube transistors. Physical Review Letters. 89: 126801. PMID 12225112 DOI: 10.1103/Physrevlett.89.126801 |
0.455 |
|
2002 |
Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2798-2801. DOI: 10.1116/1.1521731 |
0.481 |
|
2002 |
Knoch J, Lengeler B, Appenzeller J. Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI Ieee Transactions On Electron Devices. 49: 1212-1218. DOI: 10.1109/Ted.2002.1013278 |
0.475 |
|
2002 |
Appenzeller J, Martel R, Avouris P, Knoch J, Scholvin J, Del Alamo JA, Rice P, Solomon P. Sub-40 nm SOI V-groove n-MOSFETs Ieee Electron Device Letters. 23: 100-102. DOI: 10.1109/55.981319 |
0.398 |
|
2002 |
Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller J, Avouris P. Carbon nanotubes as Schottky barrier transistors Physical Review Letters. 89: 1068011-1068014. DOI: 10.1103/Physrevlett.89.106801 |
0.451 |
|
2002 |
Avouris P, Martel R, Heinze S, Radosavljevic M, Wind S, Derycke V, Appenzeller J, Terso J. The role of Schottky barriers on the behavior of carbon nanotube field‐effect transistors Structural and Electronic Properties of Molecular Nanostructures. Xvi International Winterschool On Electronic Properties of Novel Materials. 633: 508-512. DOI: 10.1063/1.1514172 |
0.429 |
|
2002 |
Knoch J, Appenzeller J. Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 81: 3082-3084. DOI: 10.1063/1.1513657 |
0.464 |
|
2002 |
Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Erratum: “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes” [Appl. Phys. Lett. 80, 3817 (2002)] Applied Physics Letters. 81: 1359-1359. DOI: 10.1063/1.1502905 |
0.445 |
|
2002 |
Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes Applied Physics Letters. 80: 3817-3819. DOI: 10.1063/1.1480877 |
0.517 |
|
2002 |
Derycke V, Martel R, Appenzeller J, Avouris P. Controlling doping and carrier injection in carbon nanotube transistors Applied Physics Letters. 80: 2773-2775. DOI: 10.1063/1.1467702 |
0.435 |
|
2002 |
Avouris P, Martel R, Derycke V, Appenzeller J. Carbon nanotube transistors and logic circuits Physica B: Condensed Matter. 323: 6-14. DOI: 10.1016/S0921-4526(02)00870-0 |
0.387 |
|
2002 |
Appenzeller J, Martel R, Derycke V, Radosavljeví M, Wind S, Neumayer D, Avouris P. Carbon nanotubes as potential building blocks for future nanoelectronics Microelectronic Engineering. 64: 391-397. DOI: 10.1016/S0167-9317(02)00813-4 |
0.45 |
|
2002 |
Martel R, Derycke V, Appenzeller J, Wind S, Avouris P. Carbon nanotube field-effect transistors and logic circuits Proceedings - Design Automation Conference. 94-98. |
0.352 |
|
2002 |
Appenzeller J, Knoch J, Martel R, Derycke V, Wind S, Avouris P. Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors Technical Digest - International Electron Devices Meeting. 285-288. |
0.319 |
|
2002 |
Appenzeller J, Knoch J, Derycke V, Martel R, Wind S, Avouris P. Field-modulated carrier transport in carbon nanotube transistors Physical Review Letters. 89: 1268011-1268014. |
0.355 |
|
2001 |
Knoch J, Appenzeller J, Lengeler B, Martel R, Solomon P, Avouris P, Dieker C, Lu Y, Wang KL, Scholvin J, del Alamo JA. Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 1737-1741. DOI: 10.1116/1.1351803 |
0.412 |
|
2001 |
Martel R, Derycke V, Lavoie C, Appenzeller J, Chan KK, Tersoff J, Avouris P. Ambipolar electrical transport in semiconducting single-wall carbon nanotubes Physical Review Letters. 87. DOI: 10.1103/Physrevlett.87.256805 |
0.397 |
|
2001 |
Appenzeller J, Martel R, Avouris P, Stahl H, Lengeler B. Optimized contact configuration for the study of transport phenomena in ropes of single-wall carbon nanotubes Applied Physics Letters. 78: 3313-3315. DOI: 10.1063/1.1373413 |
0.36 |
|
2001 |
Derycke V, Martel R, Appenzeller J, Avouris P. Carbon Nanotube Inter- and Intramolecular Logic Gates Nano Letters. 1: 453-456. DOI: 10.1021/Nl015606F |
0.425 |
|
2001 |
Jakob M, Appenzeller J, Knoch J, Stahl H, Lengeler B. Experimental determination of the Andreev reflection probability using ballistic point contact spectroscopy Materials Science and Engineering C. 15: 63-65. DOI: 10.1016/S0928-4931(01)00236-3 |
0.348 |
|
2001 |
Stahl H, Appenzeller J, Lengeler B, Martel R, Avouris P. Investigation of the inter-tube coupling in single-wall nanotube ropes Materials Science and Engineering C. 15: 291-294. DOI: 10.1016/S0928-4931(01)00229-6 |
0.32 |
|
2000 |
Uhlisch D, Lachenmann SG, Schäpers T, Braginski AI, Lüth H, Appenzeller J, Golubov AA, Ustinov AV. Splitting of the subgap resistance peak in superconductor/two-dimensional electron gas contacts at high magnetic fields Physical Review B - Condensed Matter and Materials Physics. 61: 12463-12466. DOI: 10.1103/Physrevb.61.12463 |
0.327 |
|
2000 |
Appenzeller J, Schroer C. Multimode transport in a T-shaped quantum transistor Journal of Applied Physics. 87: 3165-3167. DOI: 10.1063/1.372315 |
0.337 |
|
2000 |
Knoch J, Appenzeller J, Lengeler B. Preparation of highly transparent superconductor-semiconductor contacts Journal of Applied Physics. 88: 3522-3526. DOI: 10.1063/1.1288504 |
0.338 |
|
2000 |
Appenzeller J, Jakob M, Stahl H, Knoch J, Lengeler B. Spectroscopic measurements on the Andreev reflection probability as a function of temperature Applied Physics Letters. 77: 549-551. DOI: 10.1063/1.127040 |
0.316 |
|
2000 |
Appenzeller J, Martel R, Solomon P, Chan K, Avouris P, Knoch J, Benedict J, Tanner M, Thomas S, Wang KL, Del Alamo JA. Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 77: 298-300. DOI: 10.1063/1.126956 |
0.426 |
|
2000 |
Jakob M, Stahl H, Knoch J, Appenzeller J, Lengeler B, Hardtdegen H, Lüth H. Direct determination of the Andreev reflection probability by means of point contact spectroscopy Applied Physics Letters. 76: 1152-1154. DOI: 10.1063/1.125967 |
0.339 |
|
1998 |
Schäpers T, Appenzeller J, Hardtdegen H, Lüth H. Observation of quantized conductance in split-gate In0.53Ga0.47As/In0.77Ga0.23As/InP point contacts using Cr/Au p-InP Schottky barriers Journal of Applied Physics. 83: 2360-2362. DOI: 10.1063/1.366979 |
0.353 |
|
1996 |
Neurohr K, Golubov AA, Klocke T, Kaufmann J, Schäpers T, Appenzeller J, Uhlisch D, Ustinov AV, Hollfelder M, Lüth H, Braginski AI. Properties of lateral Nb contacts to a two-dimensional electron gas in an In0.77Ga0.23As/InP heterostructure Physical Review B - Condensed Matter and Materials Physics. 54: 17018-17028. DOI: 10.1103/Physrevb.54.17018 |
0.351 |
|
1996 |
Appenzeller J, Schroer C, Schäpers T, Hart AVD, Förster A, Lengeler B, Lüth H. Electron interference in a T-shaped quantum transistor based on Schottky-gate technology Physical Review B - Condensed Matter and Materials Physics. 53: 9959-9963. DOI: 10.1103/Physrevb.53.9959 |
0.411 |
|
1996 |
Tietze MF, Schäpers T, Appenzeller J, Engels G, Hollfelder M, Lengeler B, Lüth H. Quantized conductance in a split-gate point contact based on a pseudomorphic InGaAs/InP heterostructure Journal of Applied Physics. 79: 871-875. DOI: 10.1063/1.360907 |
0.414 |
|
1996 |
Uhlisch D, Kupriyanov MY, Golubov AA, Appenzeller J, Klocke T, Neurohr K, Ustinov AV, Braginski AI. Magnetoresistance of a lateral contact to a two-dimensional electron gas Physica B: Condensed Matter. 225: 197-201. DOI: 10.1016/0921-4526(96)86774-3 |
0.36 |
|
1995 |
Appenzeller J, Schäpers T, Hardtdegen H, Lengeler B, Lüth H. Aharonov-Bohm effect in quasi-one-dimensional In0.77Ga0.23As/InP rings Physical Review B. 51: 4336-4342. DOI: 10.1103/Physrevb.51.4336 |
0.306 |
|
1993 |
Hardtdegen H, Meyer R, Hollfelder M, Schäpers T, Appenzeller J, Løken-Larsen H, Klocke T, Dieker C, Lengeler B, Lüth H, Jäger W. Optimization of modulation-doped Ga1-xInxAs/InP heterostructures towards extremely high mobilities Journal of Applied Physics. 73: 4489-4493. DOI: 10.1063/1.352789 |
0.355 |
|
1992 |
Hardtdegen H, Meyer R, Løken-Larsen H, Appenzeller J, Schäpers T, Lüth H. Extremely high electron mobilities in modulation doped Ga1-xInxAs/InP heterostructures grown by LP-MOVPE Journal of Crystal Growth. 116: 521-523. DOI: 10.1016/0022-0248(92)90664-5 |
0.311 |
|
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