Liwang Ye, Ph.D. - Publications
Affiliations: | 2014 | Physics, Applied | University of Maryland, Baltimore County, Baltimore, MD, United States |
Area:
Atomic Physics, Nanoscience, Materials Science EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2017 | Ye L, Kropp JA, Gougousi T. In situ infrared spectroscopy study of the surface reactions during the atomic layer deposition of TiO2 on GaAs (100) surfaces Applied Surface Science. 422: 666-674. DOI: 10.1016/J.Apsusc.2017.05.264 | 0.663 | |||
2016 | Ye L, Gougousi T. Diffusion and interface evolution during the atomic layer deposition of TiO |
0.688 | |||
2014 | Ye L, Gougousi T. In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2on GaAs(100) surfaces Applied Physics Letters. 105. DOI: 10.1063/1.4896501 | 0.67 | |||
2014 | Lv Y, Xu Z, Ye L, Su G, Zhuang X. Large single crystal growth and characterization of CuX (X=Cl, Br) by temperature reduction method Journal of Crystal Growth. 402: 337-341. DOI: 10.1016/J.Jcrysgro.2014.05.029 | 0.301 | |||
2013 | Ye L, Gougousi T. Indium diffusion and native oxide removal during the atomic layer deposition (ALD) of TiO2 films on InAs(100) surfaces. Acs Applied Materials & Interfaces. 5: 8081-7. PMID 23895423 DOI: 10.1021/Am402161F | 0.675 | |||
2012 | Gougousi T, Ye L. Interface between atomic layer deposition Ta |
0.683 | |||
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