Year |
Citation |
Score |
2016 |
Ke Y, Hainey M, Won D, Weng X, Eichfeld SM, Redwing JM. Carrier gas effects on aluminum-catalyzed nanowire growth. Nanotechnology. 27: 135605. PMID 26900836 DOI: 10.1088/0957-4484/27/13/135605 |
0.326 |
|
2015 |
Wang X, Ke Y, Kendrick CE, Weng X, Shen H, Kuo M, Mayer TS, Redwing JM. The effects of shell layer morphology and processing on the electrical and photovoltaic properties of silicon nanowire radial p+ - n+ junctions. Nanoscale. 7: 7267-74. PMID 25811140 DOI: 10.1039/C5Nr00512D |
0.428 |
|
2013 |
Won D, Weng X, Al Balushi ZY, Redwing JM. Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates Applied Physics Letters. 103. DOI: 10.1063/1.4845575 |
0.425 |
|
2013 |
Tungare M, Weng X, Leathersich JM, Suvarna P, Redwing JM, Shahedipour-Sandvik F. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate Journal of Applied Physics. 113. DOI: 10.1063/1.4798598 |
0.457 |
|
2013 |
Won D, Weng X, Yuwen YA, Ke Y, Kendrick C, Shen H, Mayer TS, Redwing JM. GaN growth on Si pillar arrays by metalorganic chemical vapor deposition Journal of Crystal Growth. 370: 259-264. DOI: 10.1016/J.Jcrysgro.2012.10.004 |
0.454 |
|
2013 |
Leathersich JM, Tungare M, Weng X, Suvarna P, Agnihotri P, Evans M, Redwing J, Shahedipour-Sandvik F. Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy Journal of Electronic Materials. 42: 833-837. DOI: 10.1007/S11664-013-2491-5 |
0.405 |
|
2012 |
Howsare CA, Weng X, Bojan V, Snyder D, Robinson JA. Substrate considerations for graphene synthesis on thin copper films. Nanotechnology. 23: 135601. PMID 22418897 DOI: 10.1088/0957-4484/23/13/135601 |
0.39 |
|
2012 |
Redwing JM, Manning IC, Weng X, Eichfeld SM, Acord JD, Fanton MA, Snyder DW. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films Materials Research Society Symposium Proceedings. 1396: 183-191. DOI: 10.1557/Opl.2012.215 |
0.47 |
|
2012 |
Weng X, Grave DA, Hughes ZR, Wolfe DE, Robinson JA. Microstructure, phase transition, and interfacial chemistry of Gd 2O 3/Si(111) grown by electron-beam physical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4726266 |
0.444 |
|
2012 |
Abraham M, Weng X, Hyuck Choi W, Downey BP, Mohney SE. Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4770365 |
0.341 |
|
2012 |
Brom JE, Ke Y, Du R, Won D, Weng X, Andre K, Gagnon JC, Mohney SE, Li Q, Chen K, Xi XX, Redwing JM. Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.4704680 |
0.447 |
|
2012 |
Weng X, Robinson JA, Trumbull K, Cavalero R, Fanton MA, Snyder D. Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure Applied Physics Letters. 100. DOI: 10.1063/1.3678021 |
0.381 |
|
2012 |
Won D, Weng X, Redwing JM. Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants Applied Physics Letters. 100. DOI: 10.1063/1.3676275 |
0.416 |
|
2012 |
Grave DA, Hughes ZR, Robinson JA, Medill TP, Hollander MJ, Stump AL, Labella M, Weng X, Wolfe DE. Process-structure-property relations of micron thick Gd 2O 3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) Surface and Coatings Technology. 206: 3094-3103. DOI: 10.1016/J.Surfcoat.2011.12.031 |
0.424 |
|
2012 |
Raghavan S, Manning IC, Weng X, Redwing JM. Dislocation bending and tensile stress generation in GaN and AlGaN films Journal of Crystal Growth. 359: 35-42. DOI: 10.1016/J.Jcrysgro.2012.08.020 |
0.436 |
|
2012 |
Gagnon JC, Tungare M, Weng X, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. In situ stress measurements during GaN growth on ion-implanted AlN/Si substrates Journal of Electronic Materials. 41: 865-872. DOI: 10.1007/S11664-011-1852-1 |
0.438 |
|
2011 |
Chen K, Zhuang CG, Li Q, Weng X, Redwing JM, Zhu Y, Voyles PM, Xi XX. MgB2/MgO/MgB2 josephson junctions for high-speed circuits Ieee Transactions On Applied Superconductivity. 21: 115-118. DOI: 10.1109/Tasc.2010.2093853 |
0.395 |
|
2011 |
Dai W, Ferrando V, Pogrebnyakov AV, Wilke RHT, Chen K, Weng X, Redwing J, Bark CW, Eom CB, Zhu Y, Voyles PM, Rickel D, Betts JB, Mielke CH, Gurevich A, et al. High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources Superconductor Science and Technology. 24. DOI: 10.1088/0953-2048/24/12/125014 |
0.375 |
|
2011 |
Wood AW, Weng X, Wang YQ, Goldman RS. Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals Applied Physics Letters. 99. DOI: 10.1063/1.3617464 |
0.53 |
|
2011 |
Rathi SJ, Jariwala BN, Beach JD, Stradins P, Taylor PC, Weng X, Ke Y, Redwing JM, Agarwal S, Collins RT. Tin-catalyzed plasma-assisted growth of silicon nanowires Journal of Physical Chemistry C. 115: 3833-3839. DOI: 10.1021/Jp1066428 |
0.358 |
|
2011 |
Eichfeld SM, Won D, Trumbull K, Labella M, Weng X, Robinson J, Snyder D, Redwing JM, Paskova T, Udwary K, Mulholland G, Preble E, Evans KR. Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2053-2055. DOI: 10.1002/Pssc.201001059 |
0.442 |
|
2010 |
Robinson JA, Labella M, Trumbull KA, Weng X, Cavelero R, Daniels T, Hughes Z, Hollander M, Fanton M, Snyder D. Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties. Acs Nano. 4: 2667-72. PMID 20415460 DOI: 10.1021/Nn1003138 |
0.364 |
|
2010 |
Robinson J, Weng X, Trumbull K, Cavalero R, Wetherington M, Frantz E, Labella M, Hughes Z, Fanton M, Snyder D. Nucleation of epitaxial graphene on SiC(0001). Acs Nano. 4: 153-8. PMID 20000439 DOI: 10.1021/Nn901248J |
0.343 |
|
2010 |
Kendrick CE, Eichfeld SM, Ke Y, Weng X, Wang X, Mayer TS, Redwing JM. Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.861571 |
0.431 |
|
2010 |
Moon JS, Curtis D, Bui S, Marshall T, Wheeler D, Valles I, Kim S, Wang E, Weng X, Fanton M. Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers Ieee Electron Device Letters. 31: 1193-1195. DOI: 10.1109/Led.2010.2065792 |
0.376 |
|
2010 |
Moon JS, Curtis D, Bui S, Hu M, Gaskill DK, Tedesco JL, Asbeck P, Jernigan GG, Vanmil BL, Myers-Ward RL, Eddy CR, Campbell PM, Weng X. Top-gated epitaxial graphene FETs on si-face sic wafers with a peak transconductance of 600 mS/mm Ieee Electron Device Letters. 31: 260-262. DOI: 10.1109/Led.2010.2040132 |
0.355 |
|
2010 |
Weng X, Robinson JA, Trumbull K, Cavalero R, Fanton MA, Snyder D. Structure of few-layer epitaxial graphene on 6H -SiC(0001) at atomic resolution Applied Physics Letters. 97. DOI: 10.1063/1.3517505 |
0.356 |
|
2010 |
Won D, Weng X, Redwing JM. Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3487955 |
0.453 |
|
2010 |
Weng X, Tian W, Schlom DG, Dickey EC. Structure and chemistry of the (111) Sc2 O3 / (0001) GaN epitaxial interface Applied Physics Letters. 96. DOI: 10.1063/1.3454924 |
0.336 |
|
2010 |
Chen K, Zhuang CG, Li Q, Zhu Y, Voyles PM, Weng X, Redwing JM, Singh RK, Kleinsasser AW, Xi XX. High-Jc MgB2 Josephson junctions with operating temperature up to 40 K Applied Physics Letters. 96: 042506. DOI: 10.1063/1.3298366 |
0.338 |
|
2010 |
Weng X, Burke RA, Dickey EC, Redwing JM. Effect of reactor pressure on catalyst composition and growth of GaSb nanowires Journal of Crystal Growth. 312: 514-519. DOI: 10.1016/J.Jcrysgro.2009.11.035 |
0.311 |
|
2010 |
Manning IC, Weng X, Fanton MA, Snyder DW, Redwing JM. Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN Journal of Crystal Growth. 312: 1301-1306. DOI: 10.1016/J.Jcrysgro.2009.11.024 |
0.397 |
|
2010 |
Burke RA, Weng X, Kuo MW, Song YW, Itsuno AM, Mayer TS, Durbin SM, Reeves RJ, Redwing JM. Growth and characterization of unintentionally doped GaSb nanowires Journal of Electronic Materials. 39: 355-364. DOI: 10.1007/S11664-010-1140-5 |
0.389 |
|
2009 |
Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth. Nano Letters. 9: 4494-9. PMID 19904918 DOI: 10.1021/Nl902808R |
0.381 |
|
2009 |
Robinson JA, Wetherington M, Tedesco JL, Campbell PM, Weng X, Stitt J, Fanton MA, Frantz E, Snyder D, VanMil BL, Jernigan GG, Myers-Ward RL, Eddy CR, Gaskill DK. Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale. Nano Letters. 9: 2873-6. PMID 19719106 DOI: 10.1021/Nl901073G |
0.346 |
|
2009 |
Weng X, Burke RA, Redwing JM. The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition. Nanotechnology. 20: 085610. PMID 19417458 DOI: 10.1088/0957-4484/20/8/085610 |
0.335 |
|
2009 |
Allen MW, Weng X, Redwing JM, Sarpatwari K, Mohney SE, von Wenckstern H, Grundmann M, Durbin SM. Temperature-dependent properties of nearly ideal ZnO schottky diodes Ieee Transactions On Electron Devices. 56: 2160-2164. DOI: 10.1109/Ted.2009.2026393 |
0.31 |
|
2009 |
Manning IC, Weng X, Acord JD, Fanton MA, Snyder DW, Redwing JM. Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films Journal of Applied Physics. 106. DOI: 10.1063/1.3160331 |
0.463 |
|
2009 |
Burke RA, Lamborn DR, Weng X, Redwing JM. Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires Journal of Crystal Growth. 311: 3409-3416. DOI: 10.1016/J.Jcrysgro.2009.03.050 |
0.438 |
|
2008 |
Acord JD, Manning IC, Weng X, Snyder DW, Redwing JM. In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films Applied Physics Letters. 93. DOI: 10.1063/1.2986448 |
0.452 |
|
2008 |
Jain A, Weng X, Raghavan S, Vanmil BL, Myers T, Redwing JM. Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2973681 |
0.376 |
|
2008 |
Fisher P, Du H, Skowronski M, Salvador PA, Maksimov O, Weng X. Stoichiometric, nonstoichiometric, and locally nonstoichiometric SrTiO3 films grown by molecular beam epitaxy Journal of Applied Physics. 103. DOI: 10.1063/1.2827992 |
0.428 |
|
2008 |
Maksimov O, Fisher P, Skowronski M, Salvador PA, Snyder M, Xu J, Weng X. MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy Journal of Crystal Growth. 310: 2760-2766. DOI: 10.1016/J.Jcrysgro.2008.02.013 |
0.422 |
|
2008 |
Acord JD, Weng X, Dickey EC, Snyder DW, Redwing JM. Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates Journal of Crystal Growth. 310: 2314-2319. DOI: 10.1016/J.Jcrysgro.2007.11.153 |
0.431 |
|
2008 |
Weng X, Fisher P, Skowronski M, Salvador PA, Maksimov O. Structural characterization of TiO2 films grown on LaAlO3 and SrTiO3 substrates using reactive molecular beam epitaxy Journal of Crystal Growth. 310: 545-550. DOI: 10.1016/J.Jcrysgro.2007.10.084 |
0.403 |
|
2007 |
Xi XX, Pogrebnyakov AV, Xu SY, Chen K, Cui Y, Maertz EC, Zhuang CG, Li Q, Lamborn DR, Redwing JM, Liu ZK, Soukiassian A, Schlom DG, Weng XJ, Dickey EC, et al. MgB2 thin films by hybrid physical-chemical vapor deposition Physica C: Superconductivity and Its Applications. 456: 22-37. DOI: 10.1016/J.Physc.2007.01.029 |
0.302 |
|
2007 |
Weng X, Raghavan S, Acord JD, Jain A, Dickey EC, Redwing JM. Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates Journal of Crystal Growth. 300: 217-222. DOI: 10.1016/J.Jcrysgro.2006.11.030 |
0.448 |
|
2007 |
Sheldon BW, Bhandari A, Bower AF, Raghavan S, Weng X, Redwing JM. Steady-state tensile stresses during the growth of polycrystalline films Acta Materialia. 55: 4973-4982. DOI: 10.1016/J.Actamat.2007.05.008 |
0.384 |
|
2007 |
Weng X, Acord JD, Jain A, Dickey EC, Redwing JM. Evolution of threading dislocation density and stress in GaN films grown on (111) Si substrates by metalorganic chemical vapor deposition Journal of Electronic Materials. 36: 346-352. DOI: 10.1007/S11664-006-0055-7 |
0.404 |
|
2006 |
Weng X, Raghavan S, Dickey EC, Redwing JM. Stress and microstructure evolution in compositionally graded Al 1-xGaxN buffer layers for GaN growth on Si Materials Research Society Symposium Proceedings. 892: 27-32. DOI: 10.1557/Proc-0892-Ff02-02 |
0.398 |
|
2006 |
Maksimov O, Fisher P, Du H, Acord JD, Weng X, Skowronski M, Heydemann VD. Growth of GaN films on GaAs substrates in an As-free environment Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1671-1675. DOI: 10.1116/1.2192538 |
0.379 |
|
2006 |
Chen K, Cui Y, Li Q, Xi XX, Cybart SA, Dynes RC, Weng X, Dickey EC, Redwing JM. Planar MgB 2 superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial MgB 2/TiB 2 bilayers Applied Physics Letters. 88. DOI: 10.1063/1.2208555 |
0.347 |
|
2006 |
Raghavan S, Weng X, Dickey E, Redwing JM. Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2168020 |
0.45 |
|
2006 |
Weng X, Acord J, Jain A, Raghavan S, Redwing J, Dickey E. Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers Microscopy and Microanalysis. 12: 906-907. DOI: 10.1017/S1431927606065524 |
0.469 |
|
2005 |
Raghavan S, Weng X, Dickey E, Redwing JM. Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2081128 |
0.452 |
|
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