| Year |
Citation |
Score |
| 2019 |
Yuan ZL, Xu ZY, Zheng BZ, Xu JZ, Li SS, Ge W, Wang Y, Wang J, Chang LL, Wang PD, Ledentsov NN. Two-dimensional excitonic emission in InAs submonolayers. Physical Review. B, Condensed Matter. 54: 16919-16924. PMID 9985820 DOI: 10.1103/Physrevb.54.16919 |
0.384 |
|
| 2019 |
Li SS, Xia JB, Yuan ZL, Xu ZY, Ge W, Wang XR, Wang Y, Wang J, Chang LL. Effective-mass theory for InAs/GaAs strained coupled quantum dots. Physical Review. B, Condensed Matter. 54: 11575-11581. PMID 9984946 DOI: 10.1103/Physrevb.54.11575 |
0.346 |
|
| 2019 |
Xu ZY, Lu ZD, Yang XP, Yuan ZL, Zheng BZ, Xu JZ, Ge WK, Wang Y, Wang J, Chang LL. Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates. Physical Review. B, Condensed Matter. 54: 11528-11531. PMID 9984940 DOI: 10.1103/Physrevb.54.11528 |
0.392 |
|
| 2013 |
Ding L, Yang C, He H, Wang J, Tang Z, Foreman BA, Jiang F, Ge W. Verification of Γ7 symmetry assignment for the top valence band of ZnO by magneto-optical studies of the free A exciton state New Journal of Physics. 15. DOI: 10.1088/1367-2630/15/3/033015 |
0.43 |
|
| 2012 |
Lu L, Su S, Ling C, Xu S, Zhao D, Zhu J, Yang H, Wang J, Ge W. Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique Applied Physics Express. 5: 91001. DOI: 10.1143/Apex.5.091001 |
0.362 |
|
| 2009 |
Ding L, Li B, He H, Ge W, Wang J, Ning J, Dai X, Ling CC, Xu S. Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy Journal of Applied Physics. 105: 53511. DOI: 10.1063/1.3087762 |
0.536 |
|
| 2007 |
Djurišić AB, Leung YH, Tam KH, Hsu YF, Ding L, Ge WK, Zhong YC, Wong KS, Chan WK, Tam HL, Cheah KW, Kwok WM, Phillips DL. Defect emissions in ZnO nanostructures Nanotechnology. 18. DOI: 10.1088/0957-4484/18/9/095702 |
0.467 |
|
| 2007 |
Zhao L, Pang Q, Cai Y, Wang N, Ge W, Wang J, Yang S. Vertically aligned zinc selenide nanoribbon arrays: microstructure and field emission Journal of Physics D: Applied Physics. 40: 3587-3591. DOI: 10.1088/0022-3727/40/12/007 |
0.322 |
|
| 2007 |
Li B, Wang C, Sou I, Ge W, Wang J. Anomalous photocurrent observed in an Fe–ZnS:Fe Schottky diode Applied Physics Letters. 91: 172104. DOI: 10.1063/1.2801707 |
0.307 |
|
| 2007 |
Zhang JG, Wang XX, Cheng BW, Yu JZ, Wang QM, Hau J, Ding L, Ge WK. Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation Applied Physics Letters. 90: 081101. DOI: 10.1063/1.2471673 |
0.387 |
|
| 2007 |
Lv YZ, Zhang YH, Li CP, Ren LR, Guo L, Xu HB, Ding L, Yang CL, Ge WK, Yang SH. Temperature-dependent photoluminescence of ZnO nanorods prepared by a simple solution route Journal of Luminescence. 122: 816-818. DOI: 10.1016/J.Jlumin.2006.01.296 |
0.5 |
|
| 2006 |
Tam KH, Cheung CK, Leung YH, Djurisi? AB, Ling CC, Beling CD, Fung S, Kwok WM, Chan WK, Phillips DL, Ding L, Ge WK. Defects in ZnO nanorods prepared by a hydrothermal method. The Journal of Physical Chemistry. B. 110: 20865-71. PMID 17048900 DOI: 10.1021/Jp063239W |
0.54 |
|
| 2006 |
Yang CL, He HT, Ding L, Cui LJ, Zeng YP, Wang JN, Ge WK. Spectral dependence of spin photocurrent and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas. Physical Review Letters. 96: 186605. PMID 16712387 DOI: 10.1103/Physrevlett.96.186605 |
0.423 |
|
| 2006 |
Tan P, Luo X, Xu Z, Zhang Y, Mascarenhas A, Xin H, Tu C, Ge W. Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study Physical Review B. 73. DOI: 10.1103/Physrevb.73.205205 |
0.35 |
|
| 2006 |
Lv Y, Guo L, Xu H, Ding L, Yang C, Wang J, Ge W, Yang S, Wu Z. Low temperature synthesis and optical properties of small-diameter ZnO nanorods Journal of Applied Physics. 99: 114302. DOI: 10.1063/1.2200408 |
0.549 |
|
| 2006 |
Lu S, Jiang D, Dai J, Yang C, He H, Ge W, Wang J, Chang K, Zhang J, Shen D. Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates Journal of Applied Physics. 99: 73517. DOI: 10.1063/1.2190722 |
0.308 |
|
| 2006 |
Djurišić AB, Leung YH, Tam KH, Ding L, Ge WK, Chen HY, Gwo S. Green, yellow, and orange defect emission from ZnO nanostructures : Influence of excitation wavelength Applied Physics Letters. 88: 103107. DOI: 10.1063/1.2182096 |
0.472 |
|
| 2006 |
Ling CC, Chen X, Gong M, Yang C, Ge W, Wang J. Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation Physica B-Condensed Matter. 376: 374-377. DOI: 10.1016/J.Physb.2005.12.095 |
0.313 |
|
| 2006 |
Leung C, Djurišić A, Leung Y, Ding L, Yang C, Ge W. Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires Journal of Crystal Growth. 290: 131-136. DOI: 10.1016/J.JCRYSGRO.2005.12.110 |
0.41 |
|
| 2006 |
Pang Q, Zhao L, Ge W, Wang J, Fang Y, Wen X, Yang S. Vertically aligned and hexagonal crystal ZnSe nanoribbon arrays on Zn substrates Frontiers of Physics in China. 1: 442-445. DOI: 10.1007/S11467-006-0046-4 |
0.338 |
|
| 2005 |
Wen X, Fang Y, Pang Q, Yang C, Wang J, Ge W, Wong KS, Yang S. ZnO nanobelt arrays grown directly from and on zinc substrates: synthesis, characterization, and applications. The Journal of Physical Chemistry. B. 109: 15303-8. PMID 16852939 DOI: 10.1021/Jp052466F |
0.374 |
|
| 2005 |
Mei YF, Fu RKY, Wang RS, Wong KW, Ong HC, Ding L, Ge WK, Siu GG, Chu PK. Controlled Growth of ZnO films on Si Substrate and N-doping Behavior Mrs Proceedings. 864. DOI: 10.1557/PROC-864-E7.11 |
0.442 |
|
| 2005 |
Djurisic AB, Leung YH, Tam KH, Ding L, Ge WK, Chan WK. Defect emissions in ZnO nanostructures Proceedings of Spie. 5925: 61-68. DOI: 10.1117/12.614047 |
0.505 |
|
| 2005 |
Wang X, Zhang J, Ding L, Cheng B, Ge W, Yu J, Wang Q. Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix Physical Review B. 72: 195313. DOI: 10.1103/Physrevb.72.195313 |
0.49 |
|
| 2005 |
Yang C, Ding L, Wang J, Fung KK, Ge W, Liang H, Yu L, Qi Y, Wang D, Lü Z, Lau KM. Thermally activated carrier transfer processes in InGaN∕GaN multi-quantum-well light-emitting devices Journal of Applied Physics. 98: 23703. DOI: 10.1063/1.1978967 |
0.478 |
|
| 2005 |
Pang Q, Zhao L, Cai Y, Nguyen DP, Regnault N, Wang N, Yang S, Ge W, Ferreira R, Bastard G, Wang J. CdSe Nano-tetrapods: Controllable Synthesis, Structure Analysis, and Electronic and Optical Properties Chemistry of Materials. 17: 5263-5267. DOI: 10.1021/Cm050774K |
0.316 |
|
| 2005 |
Yu Y, Yu JC, Chan C, Che Y, Zhao J, Ding L, Ge W, Wong P. Enhancement of adsorption and photocatalytic activity of TiO2 by using carbon nanotubes for the treatment of azo dye Applied Catalysis B: Environmental. 61: 1-11. DOI: 10.1016/J.Apcatb.2005.03.008 |
0.464 |
|
| 2005 |
Yu Y, Yu JC, Yu J, Kwok Y, Che Y, Zhao J, Ding L, Ge W, Wong P. Enhancement of photocatalytic activity of mesoporous TiO2 by using carbon nanotubes Applied Catalysis a: General. 289: 186-196. DOI: 10.1016/J.Apcata.2005.04.057 |
0.464 |
|
| 2005 |
Fang Y, Wen X, Yang S, Pang Q, Ding L, Wang J, Ge W. Hydrothermal Synthesis and Optical Properties of ZnO Nanostructured Films Directly Grown from/on Zinc Substrates Journal of Sol-Gel Science and Technology. 36: 227-234. DOI: 10.1007/S10971-006-9408-1 |
0.52 |
|
| 2004 |
Pang Q, Guo B, Yang C, Yang S, Gong M, Ge W, Wang J. Cd1−xMnxS quantum dots: new synthesis and characterization Journal of Crystal Growth. 269: 213-217. DOI: 10.1016/J.Jcrysgro.2004.04.119 |
0.341 |
|
| 2003 |
Lu L, Yang C, Wang J, Sou I, Ge W. Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS Journal of Applied Physics. 93: 5325-5330. DOI: 10.1063/1.1559633 |
0.408 |
|
| 2003 |
Lu S, Wang J, Huang J, Bian L, Jiang D, Yang C, Dai J, Ge W, Wang Y, Zhang J, Shen D. The effects of rapid thermal annealing on the optical properties of Zn1−xMnxSe epilayer grown by MOCVD on GaAs substrate Journal of Crystal Growth. 249: 538-543. DOI: 10.1016/S0022-0248(02)02354-0 |
0.404 |
|
| 2003 |
Luo X, Xu Z, Wang Y, Wang W, Wang J, Ge W. Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy Journal of Crystal Growth. 247: 99-104. DOI: 10.1016/S0022-0248(02)01971-1 |
0.345 |
|
| 2002 |
Wang J, Yang C, Wang S, Guo L, Yang S, Sou I, Ge W. Characterization of Semiconductor Quantum Dots International Journal of Modern Physics B. 16: 4363-4372. DOI: 10.1142/S0217979202015443 |
0.42 |
|
| 2002 |
Lu L, Yan H, Yang C, Xie MH, Wang Z, Wang J, Ge W. Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy Semiconductor Science and Technology. 17: 957-960. DOI: 10.1088/0268-1242/17/9/310 |
0.359 |
|
| 2002 |
Luo X, Hu C, Xu Z, Luo H, Wang Y, Wang J, Ge W. Selectively excited photoluminescence of GaAs1−xSbx/GaAs single quantum wells Applied Physics Letters. 81: 3795-3797. DOI: 10.1063/1.1521250 |
0.383 |
|
| 2002 |
Chen J, Deng SZ, Xu NS, Wang S, Wen X, Yang S, Yang C, Wang J, Ge W. Field emission from crystalline copper sulphide nanowire arrays Applied Physics Letters. 80: 3620-3622. DOI: 10.1063/1.1478149 |
0.335 |
|
| 2002 |
Xu X, He H, Liu H, Shi C, Ge W, Luo EZ, Sundaravel B, Wilson IH. Photo-stimulated current spectroscopy and its application in detecting aluminum implantation-induced deep traps in GaN Thin Solid Films. 416: 294-301. DOI: 10.1016/S0040-6090(02)00681-8 |
0.348 |
|
| 2002 |
Lu LW, Fong WK, Zhu CF, Leung BH, Surya C, Wang J, Ge W. Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy Journal of Crystal Growth. 234: 99-104. DOI: 10.1016/S0022-0248(01)01664-5 |
0.347 |
|
| 2002 |
Lu L, Yang C, Yan H, Yang H, Wang Z, Wang J, Ge W. Photoluminescence and capacitance transients in highly Mg-doped GaN Applied Physics A. 75: 441-444. DOI: 10.1007/S003390100998 |
0.35 |
|
| 2001 |
Guo L, Cheng J, Li X, Yan Y, Yang S, Yang C, Wang J, Ge W. Synthesis and optical properties of crystalline polymer-capped ZnO nanorods Materials Science and Engineering: C. 16: 123-127. DOI: 10.1016/S0928-4931(01)00286-7 |
0.367 |
|
| 2000 |
Pan Z, Li LH, Zhang W, Lin YW, Wu RH, Ge W. Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 77: 1280-1282. DOI: 10.1063/1.1289916 |
0.343 |
|
| 2000 |
Guo L, Yang S, Yang C, Yu P, Wang J, Ge W, Wong GKL. Highly monodisperse polymer-capped ZnO nanoparticles: Preparation and optical properties Applied Physics Letters. 76: 2901-2903. DOI: 10.1063/1.126511 |
0.305 |
|
| 2000 |
Xu XL, Beling CD, Fung S, Zhao YW, Sun NF, Sun TN, Zhang QL, Zhan HH, Sun BQ, Wang JN, Ge WK, Wong PC. Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system Applied Physics Letters. 76: 152-154. DOI: 10.1063/1.125686 |
0.312 |
|
| 2000 |
Lu L, Zhang Y, Xu Z, Xu Z, Wang Z, Wang J, Ge W. Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes Journal of Crystal Growth. 218: 13-18. DOI: 10.1016/S0022-0248(00)00517-0 |
0.357 |
|
| 2000 |
Lu L, Mak KK, Ma ZH, Wang J, Sou I, Ge W. DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy Journal of Crystal Growth. 216: 141-146. DOI: 10.1016/S0022-0248(00)00419-X |
0.312 |
|
| 1999 |
Ho WY, Fong WK, Surya C, Tong KY, Lu LAV, Ge WK. Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions Materials Research Society Symposium - Proceedings. 537. DOI: 10.1557/S1092578300003045 |
0.318 |
|
| 1999 |
Xu Z, Wang J, Wang Y, Ge W, Li Q, Li S, Henini M. Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion Journal of Physics: Condensed Matter. 11: 3629-3633. DOI: 10.1088/0953-8984/11/17/320 |
0.389 |
|
| 1999 |
Kong M, Wang X, Pan D, Zeng Y, Wang J, Ge W. A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well Journal of Applied Physics. 86: 1456-1459. DOI: 10.1063/1.370912 |
0.349 |
|
| 1999 |
Wang J, Chen Z, Woo PW, Ge W, Wang Y, Yu M. Ultraviolet-light-enhanced luminescence in SiC thin films grown on Si by hot filament chemical vapor deposition and ultraviolet-light-induced luminescence in anodized SiC Applied Physics Letters. 74: 923-925. DOI: 10.1063/1.123411 |
0.384 |
|
| 1998 |
Lu L, Wang J, Wang Y, Ge W, Yang G, Wang Z. Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques Journal of Applied Physics. 83: 2093-2097. DOI: 10.1063/1.366942 |
0.336 |
|
| 1998 |
Feng W, Wang Y, Wang J, Ge W, Huang Q, Zhou J. Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells Applied Physics Letters. 72: 1463-1465. DOI: 10.1063/1.120593 |
0.378 |
|
| 1998 |
Wang J, Li R, Wang Y, Ge W, Ting DZ-. Resonant tunnelling via InAs self-organized quantum dot states Microelectronic Engineering. 43: 341-347. DOI: 10.1016/S0167-9317(98)00183-X |
0.325 |
|
| 1998 |
Lu L, Zhang Y, Yang G, Wang J, Ge W. Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth Journal of Crystal Growth. 194: 25-30. DOI: 10.1016/S0022-0248(98)00609-5 |
0.313 |
|
| 1997 |
Ge W, Lam SB, Sou I, Wang J, Wang Y, Li G, Han H, Wang Z. Sulfur forming an isoelectronic center in zinc telluride thin films Physical Review B. 55: 10035-10039. DOI: 10.1103/Physrevb.55.10035 |
0.358 |
|
| 1997 |
Lu L, Ge W, Sou I, Wang Y, Wang J, Ma ZH, Chen WS, Wong GKL. Deep Electron States in n-type Al-doped ZnS1-xTex Grown by Molecular Beam Epitaxy Journal of Applied Physics. 82: 4412-4416. DOI: 10.1063/1.366168 |
0.356 |
|
| 1997 |
Wang Y, Sheng YN, Ge W, Wang J, Chang LL, Xie J, Ma J, Xu J. Morphology of MBE grown InAs films studied by atomic force microscope Journal of Crystal Growth. 175: 1289-1293. DOI: 10.1016/S0022-0248(96)00959-1 |
0.306 |
|
| 1996 |
Ge W, Song C, Jiang D. Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs. Physical Review B. 53: 9809-9813. PMID 9982541 DOI: 10.1103/Physrevb.53.9809 |
0.345 |
|
| 1996 |
Yuan ZL, Xu ZY, Zheng BZ, Luo CP, Xu JZ, Ge W, Zhang PH, Yang XP. Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption Journal of Applied Physics. 79: 1073-1077. DOI: 10.1063/1.360896 |
0.385 |
|
| 1996 |
Yuan ZL, Xu ZY, Ge W, Xu JZ, Zheng BZ. Energy relaxation processes of hot quasi-two-dimensional excitons in very thin GaAs/AlGaAs quantum wells by exciton-acoustic-phonon interaction Journal of Applied Physics. 79: 424-426. DOI: 10.1063/1.360847 |
0.33 |
|
| 1996 |
Lu L, Feng S, Liang J, Wang Z, Wang J, Wang Y, Ge W. Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment Journal of Crystal Growth. 169: 637-642. DOI: 10.1016/S0022-0248(96)00473-3 |
0.3 |
|
| 1995 |
Song C, Pajot B, Ge W, Jiang D. Relation between the metastability of EL2 and the photosensitivity of local vibrational modes in semi-insulating GaAs. Physical Review B. 52: 4864-4869. PMID 9981670 DOI: 10.1103/Physrevb.52.4864 |
0.303 |
|
| 1987 |
Song C, Ge W, Jiang D, Hsu C. Pair of local vibration mode absorption bands related to EL2 defects in semi‐insulating GaAs Applied Physics Letters. 50: 1666-1668. DOI: 10.1063/1.97762 |
0.338 |
|
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