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Gengchiau Liang - Publications

Affiliations: 
Department of Electrical and Computer Engineering National University of Singapore, Singapore, Singapore 
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Year Citation  Score
2020 Lan JC, Qiao J, Sung WH, Chen CH, Jhang RH, Lin SH, Ng LR, Liang G, Wu MY, Tu LW, Cheng CM, Liu H, Lee CK. Role of carrier-transfer in the optical nonlinearity of graphene/BiTe heterojunctions. Nanoscale. PMID 32779683 DOI: 10.1039/D0Nr02085K  0.378
2020 Luo S, Zhang X, Liang G. Performance Evaluation and Device Physics Investigation of Negative-Capacitance MOSFETs Based on Ultrathin Body Silicon and Monolayer MoS 2 Ieee Transactions On Electron Devices. 67: 3049-3055. DOI: 10.1109/Ted.2020.2998442  0.367
2020 Zhu Z, Cai K, Deng J, Miriyala VPK, Yang H, Fong X, Liang G. Electrical Generation and Detection of Terahertz Signal Based on Spin-Wave Emission From Ferrimagnets Physical Review Applied. 13. DOI: 10.1103/Physrevapplied.13.034040  0.334
2019 Shi S, Liang S, Zhu Z, Cai K, Pollard SD, Wang Y, Wang J, Wang Q, He P, Yu J, Eda G, Liang G, Yang H. All-electric magnetization switching and Dzyaloshinskii-Moriya interaction in WTe/ferromagnet heterostructures. Nature Nanotechnology. PMID 31427750 DOI: 10.1038/S41565-019-0525-8  0.378
2019 Yesilyurt C, Siu ZB, Tan SG, Liang G, Yang SA, Jalil MBA. Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion. Scientific Reports. 9: 4480. PMID 30872691 DOI: 10.1038/S41598-019-40947-2  0.302
2019 Wang L, Wang L, Ang K, Thean AV, Liang G. A Compact Model for 2-D Poly-MoS 2 FETs With Resistive Switching in Postsynaptic Simulation Ieee Transactions On Electron Devices. 66: 4092-4100. DOI: 10.1109/Ted.2019.2931069  0.38
2019 Miriyala VPK, Fong X, Liang G. Influence of Size and Shape on the Performance of VCMA-Based MTJs Ieee Transactions On Electron Devices. 66: 944-949. DOI: 10.1109/Ted.2018.2889112  0.32
2019 Sun C, Deng J, Rafi-Ul-Islam SM, Liang G, Yang H, Jalil MBA. Field-Free Switching of Perpendicular Magnetization Through Spin Hall and Anomalous Hall Effects in Ferromagnet-Heavy-Metal-Ferromagnet Structures Physical Review Applied. 12: 34022. DOI: 10.1103/Physrevapplied.12.034022  0.31
2019 Wang L, Thean AV, Liang G. A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems Journal of Applied Physics. 125: 224302-224302. DOI: 10.1063/1.5098862  0.342
2019 Zhu Z, Deng J, Fong X, Liang G. Voltage-input spintronic oscillator based on competing effect for extended oscillation regions Journal of Applied Physics. 125: 183902. DOI: 10.1063/1.5092881  0.375
2019 Miriyala VPK, Zhu Z, Liang G, Fong X. Spin-wave mediated interactions for majority computation using Skyrmions and spin-torque nano-oscillators Journal of Magnetism and Magnetic Materials. 486: 165271. DOI: 10.1016/J.Jmmm.2019.165271  0.317
2018 Yoon Y, Das S, Esseni D, Vittorio DD, Bhat N, Muneta I, Liang G, Schwierz F, Moshkalev SA. Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices Ieee Transactions On Electron Devices. 65: 4034-4039. DOI: 10.1109/Ted.2018.2867909  0.303
2018 Wang L, Li Y, Gong X, Thean AV, Liang G. A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect Ieee Electron Device Letters. 39: 761-764. DOI: 10.1109/Led.2018.2820142  0.385
2018 Zhu Z, Fong X, Liang G. Theoretical proposal for determining angular momentum compensation in ferrimagnets Physical Review B. 97. DOI: 10.1103/Physrevb.97.184410  0.332
2018 Zhang X, Gong X, Liang G. Effects of scalability and floating metal on NC-FETs based on a real-space atomic model Semiconductor Science and Technology. 33. DOI: 10.1088/1361-6641/Aace45  0.364
2018 Zhu Z, Fong X, Liang G. Damping-like spin-orbit-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch equation Journal of Applied Physics. 124: 193901. DOI: 10.1063/1.5048040  0.338
2018 Wang L, Li Y, Feng X, Ang K, Gong X, Thean AV, Liang G. A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors Journal of Applied Physics. 124: 34302. DOI: 10.1063/1.5040908  0.369
2018 Deng J, Fong X, Liang G. Electric-field-induced three-terminal pMTJ switching in the absence of an external magnetic field Applied Physics Letters. 112: 252405. DOI: 10.1063/1.5027759  0.333
2018 Wang L, Thean AV, Liang G. Percolation theory based statistical resistance model for resistive random access memory Applied Physics Letters. 112: 253505. DOI: 10.1063/1.5023196  0.307
2017 Kumar A, Lee SY, Yadav S, Tan KH, Loke WK, Dong Y, Lee KH, Wicaksono S, Liang G, Yoon SF, Antoniadis D, Yeo YC, Gong X. Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs). Optics Express. 25: 31853-31862. PMID 29245855 DOI: 10.1364/Oe.25.031853  0.327
2017 Deng J, Liang G, Gupta G. Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ. Scientific Reports. 7: 16562. PMID 29185449 DOI: 10.1038/S41598-017-16292-7  0.342
2017 Wang W, Dong Y, Lee SY, Loke WK, Lei D, Yoon SF, Liang G, Gong X, Yeo YC. Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range. Optics Express. 25: 18502-18507. PMID 29041050 DOI: 10.1364/Oe.25.018502  0.311
2017 Tsai ML, Li MY, Retamal JRD, Lam KT, Lin YC, Suenaga K, Chen LJ, Liang G, Li LJ, He JH. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency. Advanced Materials (Deerfield Beach, Fla.). PMID 28650580 DOI: 10.1002/Adma.201701168  0.335
2017 Kumar A, Lee SY, Yadav S, Tan KH, Loke WK, Wicaksono S, Li D, Panah SM, Liang G, Yoon SF, Gong X, Antoniadis D, Yeo YC. Monolithic integration of InGaAs n-FETs and lasers on Ge substrate. Optics Express. 25: 5146-5155. PMID 28380779 DOI: 10.1364/Oe.25.005146  0.333
2017 Sadi MA, Liang G. Wave Function Parity Loss Used to Mitigate Thermal Broadening in Spin-orbit Coupled Zigzag Graphene Analogues. Scientific Reports. 7: 40546. PMID 28091616 DOI: 10.1038/Srep40546  0.362
2017 Yadav S, Tan KH, Kumar A, Goh KH, Liang G, Yoon S, Gong X, Yeo Y. Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate Ieee Transactions On Electron Devices. 64: 353-360. DOI: 10.1109/Ted.2016.2637382  0.372
2017 Luo S, Lam K, Wang B, Hsu C, Huang W, Yao L, Bansil A, Lin H, Liang G. Effects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET Ieee Transactions On Electron Devices. 64: 579-586. DOI: 10.1109/Ted.2016.2635690  0.378
2017 Zhang X, Lam K, Low KL, Yeo Y, Liang G. Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential Ieee Transactions On Electron Devices. 64: 58-65. DOI: 10.1109/Ted.2016.2632310  0.384
2017 Wu Y, Luo S, Wang W, Masudy-Panah S, Lei D, Liang G, Gong X, Yeo Y. Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film Journal of Applied Physics. 122: 224503. DOI: 10.1063/1.5003272  0.316
2017 Yesilyurt C, Siu ZB, Tan SG, Liang G, Yang SA, Jalil MBA. Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion Applied Physics Letters. 111: 063101. DOI: 10.1063/1.4997296  0.352
2017 Yesilyurt C, Siu ZB, Tan SG, Liang G, Jalil MBA. Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap Journal of Applied Physics. 121: 244303. DOI: 10.1063/1.4989993  0.366
2016 Yesilyurt C, Tan SG, Liang G, Jalil MB. Klein tunneling in Weyl semimetals under the influence of magnetic field. Scientific Reports. 6: 38862. PMID 27941894 DOI: 10.1038/Srep38862  0.374
2016 Goh KH, Yadav S, Low KL, Liang G, Gong X, Yeo YC. Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2526778  0.306
2016 Low KL, Yeo YC, Liang G. Ultimate performance projection of ultrathin body transistor based on group IV, III-V, and 2-D-materials Ieee Transactions On Electron Devices. 63: 773-780. DOI: 10.1109/Ted.2015.2508815  0.37
2016 Dong Y, Wang W, Lee SY, Lei D, Gong X, Loke WK, Yoon SF, Liang G, Yeo YC. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/9/095001  0.311
2016 Yesilyurt C, Ghee Tan S, Liang G, Jalil MBA. Perfect valley filter in strained graphene with single barrier region Aip Advances. 6. DOI: 10.1063/1.4943237  0.353
2016 Lei D, Wang W, Zhang Z, Pan J, Gong X, Liang G, Tok ES, Yeo YC. Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality Journal of Applied Physics. 119. DOI: 10.1063/1.4939761  0.332
2015 Dong Y, Wang W, Lei D, Gong X, Zhou Q, Lee SY, Loke WK, Yoon SF, Tok ES, Liang G, Yeo YC. Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique. Optics Express. 23: 18611-9. PMID 26191919 DOI: 10.1364/Oe.23.018611  0.325
2015 Gupta G, Jalil MB, Liang G. Contact effects in thin 3D-topological insulators: how does the current flow? Scientific Reports. 5: 9479. PMID 25820460 DOI: 10.1038/Srep09479  0.385
2015 Guo Y, Zhang X, Low KL, Lam KT, Yeo YC, Liang G. Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2014.2387194  0.339
2015 Dong Y, Wang W, Xu X, Gong X, Lei D, Zhou Q, Xu Z, Loke WK, Yoon SF, Liang G, Yeo YC. Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration Ieee Transactions On Electron Devices. 62: 128-135. DOI: 10.1109/Ted.2014.2366205  0.353
2015 Gupta G, Jalil MBA, Liang G. Torque engineering in trilayer spin-hall system Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/4/045004  0.331
2015 Gupta G, Lin H, Bansil A, Jalil MBA, Liang G. Carrier transport in Bi2Se3 topological insulator slab Physica E: Low-Dimensional Systems and Nanostructures. 74: 10-19. DOI: 10.1016/J.Physe.2015.06.003  0.357
2014 Gupta G, Jalil MB, Liang G. Evaluation of mobility in thin Bi2Se3 topological insulator for prospects of local electrical interconnects. Scientific Reports. 4: 6838. PMID 25354476 DOI: 10.1038/Srep06838  0.346
2014 Gupta G, Jalil MB, Liang G. Effect of band-alignment operation on carrier transport in Bi2Se3 topological insulator. Scientific Reports. 4: 6220. PMID 25164148 DOI: 10.1038/Srep06220  0.367
2014 Huang W, Luo X, Gan CK, Quek SY, Liang G. Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2. Physical Chemistry Chemical Physics : Pccp. 16: 10866-74. PMID 24760342 DOI: 10.1039/C4Cp00487F  0.335
2014 Low KL, Huang W, Yeo YC, Liang G. Ballistic transport performance of silicane and germanane transistors Ieee Transactions On Electron Devices. 61: 1590-1598. DOI: 10.1109/Ted.2014.2313065  0.386
2014 Sadi MA, Gupta G, Liang G. Effect of phase transition on quantum transport in group-IV two-dimensional U-shape device Journal of Applied Physics. 116: 153708. DOI: 10.1063/1.4898357  0.363
2014 Gupta G, Lin H, Bansil A, Abdul Jalil MB, Huang C, Tsai W, Liang G. Y-shape spin-separator for two-dimensional group-IV nanoribbons based on quantum spin hall effect Applied Physics Letters. 104: 032410. DOI: 10.1063/1.4863088  0.344
2013 Zeng M, Huang W, Liang G. Spin-dependent thermoelectric effects in graphene-based spin valves. Nanoscale. 5: 200-8. PMID 23151965 DOI: 10.1039/C2Nr32226A  0.357
2013 Gupta G, Nurbawono A, Zeng M, Jalil MBA, Liang G. Theoretical study on Topological Insulator based Spintronic Tristable Multivibrator The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2013.Ps-12-6  0.312
2013 Huang W, Da H, Liang G. Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers Journal of Applied Physics. 113: 104304. DOI: 10.1063/1.4794363  0.338
2012 Gupta G, Jalil MB, Yu B, Liang G. Performance evaluation of electro-optic effect based graphene transistors. Nanoscale. 4: 6365-73. PMID 22948474 DOI: 10.1039/C2Nr31501G  0.436
2012 Chin SK, Lam KT, Seah D, Liang G. Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight-binding π-bond model. Nanoscale Research Letters. 7: 114. PMID 22325480 DOI: 10.1186/1556-276X-7-114  0.368
2012 Gupta G, Liang G, Jalil MBA. Comparison of Electro-Optic Effect based Graphene Transistors The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.Ps-13-11  0.339
2012 Da H, Lam K, Samudra G, Chin S, Liang G. Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel Ieee Transactions On Electron Devices. 59: 1454-1461. DOI: 10.1109/Ted.2012.2186577  0.416
2012 Zeng M, Liang G. Spin filtering and spin separating effects in U-shaped topological insulator devices Journal of Applied Physics. 112. DOI: 10.1063/1.4757411  0.354
2012 Da H, Lam K, Samudra GS, Liang G, Chin S. Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors Solid-State Electronics. 77: 51-55. DOI: 10.1016/J.Sse.2012.05.023  0.429
2012 Qian Y, Lam K, Lee C, Liang G. The effects of interlayer mismatch on electronic properties of bilayer armchair graphene nanoribbons Carbon. 50: 1659-1666. DOI: 10.1016/J.Carbon.2011.12.007  0.381
2011 Zeng M, Feng Y, Liang G. Graphene-based spin caloritronics. Nano Letters. 11: 1369-73. PMID 21344908 DOI: 10.1021/Nl2000049  0.363
2011 Sreenivas VP, Lam KT, Liang G. RF Performance of Graphene Nano-Ribbon MOSFET vs. TFET The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.K-9-5  0.353
2011 Lam KT, Chin SK, Liang G. Device Performance of Graphene Nanoribbon MOSFET and Tunneling FET with Phonon Scattering: A Computation Study The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.J-3-3  0.37
2011 Lam K, Yang Y, Samudra GS, Yeo Y, Liang G. Electrostatics of Ultimately Thin-Body Tunneling FET Using Graphene Nanoribbon Ieee Electron Device Letters. 32: 431-433. DOI: 10.1109/Led.2010.2103372  0.382
2011 Huang W, Wang J, Liang G. Theoretical study on thermoelectric properties of kinked graphene nanoribbons Physical Review B. 84: 45410. DOI: 10.1103/Physrevb.84.045410  0.545
2011 Cuansing EC, Liang G. Time-dependent quantum transport and power-law decay of the transient current in a nano-relay and nano-oscillator Journal of Applied Physics. 110: 083704. DOI: 10.1063/1.3651390  0.708
2011 Zeng M, Feng Y, Liang G. Thermally induced currents in graphene-based heterostructure Applied Physics Letters. 99: 123114. DOI: 10.1063/1.3641478  0.357
2011 Liang G, Kumar SB, Jalil MBA, Tan SG. High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects Applied Physics Letters. 99: 83107. DOI: 10.1063/1.3624459  0.39
2011 Lam K, Stephen Leo M, Lee C, Liang G. Design evaluation of graphene nanoribbon nanoelectromechanical devices Journal of Applied Physics. 110: 024302. DOI: 10.1063/1.3606578  0.388
2011 Da H, Liang G. Enhanced Faraday rotation in magnetophotonic crystal infiltrated with graphene Applied Physics Letters. 98. DOI: 10.1063/1.3605593  0.359
2011 Kumar SB, Fujita T, Liang G. Conductance modulation in graphene nanoribbon under transverse asymmetric electric potential Journal of Applied Physics. 109: 73704. DOI: 10.1063/1.3562155  0.423
2010 Kumar SB, Jalil MB, Tan SG, Liang G. The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 375303. PMID 21403192 DOI: 10.1088/0953-8984/22/37/375303  0.38
2010 Kumar SB, Fujita T, Liang G. Graphene based transversal-gated field effect transistor due to band gap modulation The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.J-5-4  0.39
2010 Da H, Lam KT, Chin SK, Samudra GS, Yeo YC, Liang G. Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.J-5-2  0.38
2010 Huang W, Liang G. Size and Chirality Dependence on Thermoelectric Properties of Graphene Nanoribbons The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.J-3-2  0.333
2010 Koong CS, Samudra G, Liang G. Shape Effects on the Performance of Si and Ge Nanowire Field-Effect Transistors Based on Size Dependent Bandstructure Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.04Dn07  0.394
2010 Lam K, Chin S, Seah DW, Kumar SB, Liang G. Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors Japanese Journal of Applied Physics. 49: 04DJ10. DOI: 10.1143/Jjap.49.04Dj10  0.434
2010 Chin S, Seah D, Lam K, Samudra GS, Liang G. Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs Ieee Transactions On Electron Devices. 57: 3144-3152. DOI: 10.1109/Ted.2010.2065809  0.4
2010 Huang W, Koong CS, Liang G. Theoretical Study on Thermoelectric Properties of Ge Nanowires Based on Electronic Band Structures Ieee Electron Device Letters. 31: 1026-1028. DOI: 10.1109/Led.2010.2053190  0.354
2010 Lam K, Seah D, Chin S, Bala Kumar S, Samudra G, Yeo Y, Liang G. A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel Ieee Electron Device Letters. 31: 555-557. DOI: 10.1109/Led.2010.2045339  0.387
2010 Liang G, Khalid SB, Lam K. Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes Journal of Physics D: Applied Physics. 43: 215101. DOI: 10.1088/0022-3727/43/21/215101  0.414
2010 Shin YJ, Kwon JH, Kalon G, Lam K, Bhatia CS, Liang G, Yang H. Ambipolar bistable switching effect of graphene Applied Physics Letters. 97: 262105. DOI: 10.1063/1.3532849  0.389
2010 Shin YJ, Kalon G, Son J, Kwon JH, Niu J, Bhatia CS, Liang G, Yang H. Tunneling characteristics of graphene Applied Physics Letters. 97: 252102. DOI: 10.1063/1.3527979  0.38
2010 Kumar SB, Jalil MBA, Tan SG, Liang G. Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation Journal of Applied Physics. 108: 33709. DOI: 10.1063/1.3457353  0.407
2010 Liang G, Huang W, Koong CS, Wang J, Lan J. Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structures Journal of Applied Physics. 107: 14317. DOI: 10.1063/1.3273485  0.544
2009 Lam KT, Kumar SB, Chin SK, Seah DW, Liang G. Performance Evaluation of Graphene Nanoribbon Tunneling Field Effect Transistors The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.G-9-4  0.367
2009 Khalid SB, Lam KT, Liang G. Computational Study of Edge Roughness Effect on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.G-9-3  0.389
2009 Teong H, Lam K, Liang G. A Computational Study on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes Japanese Journal of Applied Physics. 48: 04C156. DOI: 10.1143/Jjap.48.04C156  0.45
2009 Ni X, Liang G, Wang J, Li B. Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons Applied Physics Letters. 95: 192114. DOI: 10.1063/1.3264087  0.545
2009 Lam K, Lee C, Liang G. Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study Applied Physics Letters. 95: 143107. DOI: 10.1063/1.3243695  0.393
2009 Teong H, Lam K, Khalid SB, Liang G. Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study Journal of Applied Physics. 105: 084317. DOI: 10.1063/1.3115423  0.434
2008 Zhu ZG, Liang G, Li MF, Samudra G. A pseudopotential method for investigating the surface roughness effect in ultrathin body transistors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 235229. PMID 21694320 DOI: 10.1088/0953-8984/20/23/235229  0.318
2008 Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Contact effects in graphene nanoribbon transistors. Nano Letters. 8: 1819-24. PMID 18558785 DOI: 10.1021/Nl080255R  0.402
2008 Hu Y, Xiang J, Liang G, Yan H, Lieber CM. Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed. Nano Letters. 8: 925-30. PMID 18251518 DOI: 10.1021/Nl073407B  0.379
2008 Liang G, Teong H, Lam K, Neophytou N, Nikonov DE. Graphene Nanoribbon Transistors and Resonant Tunneling Diodes The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2008.H-10-2  0.369
2008 Lam K, Liang G. An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges Applied Physics Letters. 92: 223106. DOI: 10.1063/1.2938058  0.375
2008 Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Computational study of double-gate graphene nano-ribbon transistors Journal of Computational Electronics. 7: 394-397. DOI: 10.1007/S10825-008-0243-1  0.429
2007 Liang G, Xiang J, Kharche N, Klimeck G, Lieber CM, Lundstrom M. Performance analysis of a Ge/Si core/shell nanowire field-effect transistor. Nano Letters. 7: 642-6. PMID 17326690 DOI: 10.1021/Nl062596F  0.396
2007 Liang G, Kienle D, Patil SKR, Wang J, Ghosh AW, Khare SV. Impact of structure relaxation on the ultimate performance of a small diameter, n-Type (110) Si-nanowire MOSFET Ieee Transactions On Nanotechnology. 6: 225-228. DOI: 10.1109/Tnano.2007.891816  0.357
2007 Liang G, Neophytou N, Nikonov DE, Lundstrom MS. Performance projections for ballistic graphene nanoribbon field-effect transistors Ieee Transactions On Electron Devices. 54: 677-682. DOI: 10.1109/Ted.2007.891872  0.417
2007 Liang G, Neophytou N, Lundstrom MS, Nikonov DE. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation Journal of Applied Physics. 102. DOI: 10.1063/1.2775917  0.439
2004 Liang GC, Ghosh AW, Paulsson M, Datta S. Electrostatic potential profiles of molecular conductors Physical Review B. 69. DOI: 10.1103/Physrevb.69.115302  0.364
2004 Rakshit T, Liang GC, Ghosh AW, Datta S. Silicon-based molecular electronics Nano Letters. 4: 1803-1807. DOI: 10.1021/Nl049436T  0.345
Low-probability matches (unlikely to be authored by this person)
2020 Lukman S, Ding L, Xu L, Tao Y, Riis-Jensen AC, Zhang G, Wu QYS, Yang M, Luo S, Hsu C, Yao L, Liang G, Lin H, Zhang YW, Thygesen KS, et al. High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection. Nature Nanotechnology. PMID 32601449 DOI: 10.1038/S41565-020-0717-2  0.299
2019 Zhang X, Gong X, Liang G. Analysis on Performance of Ferroelectric NC-FETs Based on Real-Space Gibbs-Free Energy With Atomic Channel Structure Ieee Transactions On Electron Devices. 66: 1100-1106. DOI: 10.1109/Ted.2018.2888930  0.289
2014 Gupta G, Lin H, Bansil A, Jalil MBA, Liang G. Role of acoustic phonons in Bi 2 Se 3 topological insulator slabs: A quantum transport investigation Physical Review B. 89: 245419. DOI: 10.1103/Physrevb.89.245419  0.289
2020 Deng J, Miriyala VPK, Zhu Z, Fong X, Liang G. Voltage-Controlled Spintronic Stochastic Neuron for Restricted Boltzmann Machine With Weight Sparsity Ieee Electron Device Letters. 41: 1102-1105. DOI: 10.1109/Led.2020.2995874  0.283
2009 Koong CS, Samudra G, Liang G. Shape Effects on the Performance of Si and Ge Nanowire FETs based on Size De-pendent Bandstructure The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.P-13-8  0.283
2009 Huang W, Koong CS, Liang G. Theoretical Study on Thermoelectric Properties of Ge and Si Nanowires The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.E-6-2  0.28
2017 Tsai M, Li M, Retamal JRD, Lam K, Lin Y, Suenaga K, Chen L, Liang G, Li L, He J. 2D Materials: Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency (Adv. Mater. 32/2017) Advanced Materials. 29. DOI: 10.1002/Adma.201770230  0.277
2016 Gong X, Yadav S, Goh K, Tan K, Kumar A, Low K, Jia B, Yoon S, Liang G, Yeo Y. Enabling Hetero-integration of III-V and Ge-based Transistors on Silicon with Ultra-thin Buffers formed by Interfacial Misfit Technique The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2016.A-5-01  0.277
2015 Yesilyurt C, Tan SG, Liang G, Jalil MBA. Efficient dual spin-valley filter in strained silicene Applied Physics Express. 8: 105201. DOI: 10.7567/Apex.8.105201  0.275
2007 Liang G. Structure effects in the gate-all-around silicon nanowire MOSFETs Ieee Conference On Electron Devices and Solid-State Circuits 2007, Edssc 2007. 129-132. DOI: 10.1109/EDSSC.2007.4450079  0.269
2011 Lam K, Lu Y, Feng YP, Liang G. Stability and electronic structure of two dimensional Cx(BN)y compound Applied Physics Letters. 98: 022101. DOI: 10.1063/1.3535604  0.267
2021 Kang Y, Xu S, Han K, Kong EY, Song Z, Luo S, Kumar A, Wang C, Fan W, Liang G, Gong X. GeSn Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width. Nano Letters. PMID 34105972 DOI: 10.1021/acs.nanolett.1c00934  0.266
2018 Hsu MC, Yao LZ, Tan SG, Chang CR, Liang G, Jalil MBA. Inherent orbital spin textures in Rashba effect and their implications in spin-orbitronics. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 29809165 DOI: 10.1088/1361-648X/Aac86F  0.264
2008 Koong CS, Samudra G, Liang G. Investigate the Effects of Channel Materials & Channel Orientations on the Performance of Nanowire FETs The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2008.B-2-3  0.263
2013 Dong Y, Wang W, Xu X, Gong X, Guo P, Zhou Q, Wang L, Han G, Xu Z, Yoon SF, Liang G, Yeo YC. GeSn Metal-Semiconductor-Metal Photodetectors with Suppressed Dark Current by Ammonium Sulfide Surface Passivation The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2013.K-3-3  0.254
2015 Dong Y, Ong BL, Wang W, Zhang Z, Pan J, Gong X, Tok ES, Liang G, Yeo YC. Etching of germanium-tin using ammonia peroxide mixture Journal of Applied Physics. 118. DOI: 10.1063/1.4938476  0.253
2016 Wang W, Loke WK, Yin T, Zhang Z, D'Costa VR, Dong Y, Liang G, Pan J, Shen Z, Yoon SF, Tok ES, Yeo Y. Growth and characterization of highly tensile strained Ge1−xSnx formed on relaxed InyGa1−yP buffer layers Journal of Applied Physics. 119: 125303. DOI: 10.1063/1.4944718  0.25
2019 Zhu Z, Deng J, Fong X, Liang G. Erratum: “Voltage-input spintronic oscillator based on competing effect for extended oscillation regions” [J. Appl. Phys. 125, 183902 (2019)] Journal of Applied Physics. 126: 039901. DOI: 10.1063/1.5116611  0.238
2021 Lu XF, Zhang Y, Wang N, Luo S, Peng K, Wang L, Chen H, Gao W, Chen XH, Bao Y, Liang G, Loh KP. Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS. Nano Letters. PMID 34644096 DOI: 10.1021/acs.nanolett.1c03169  0.238
2016 Lam KT, Luo S, Wang B, Hsu CH, Bansil A, Lin H, Liang G. Effects of interlayer interaction in van der Waals layered black phosphorus for sub-10 nm FET Technical Digest - International Electron Devices Meeting, Iedm. 2016: 12.2.1-12.2.4. DOI: 10.1109/IEDM.2015.7409681  0.232
2008 Liang G. Width effects in ballistic graphene nanoribbon FETs 2008 2nd Ieee International Nanoelectronics Conference, Inec 2008. 1187-1188. DOI: 10.1109/INEC.2008.4585691  0.228
2002 Miklós A, Lim CH, Hsiang WW, Liang GC, Kung AH, Schmohl A, Hess P. Photoacoustic measurement of methane concentrations with a compact pulsed optical parametric oscillator. Applied Optics. 41: 2985-93. PMID 12027189 DOI: 10.1364/Ao.41.002985  0.226
2016 Goh KH, Tan KH, Yadav S, Annie, Yoon SF, Liang G, Gong X, Yeo YC. Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules Technical Digest - International Electron Devices Meeting, Iedm. 2016: 15.4.1-15.4.4. DOI: 10.1109/IEDM.2015.7409704  0.224
2005 Rakshit T, Liang GC, Ghosh AW, Hersam MC, Datta S. Molecules on silicon: Self-consistent first-principles theory and calibration to experiments Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.125305  0.219
2006 Kienle D, Bevan KH, Liang GC, Siddiqui L, Cerda JI, Ghosh AW. Extended Hückel theory for band structure, chemistry, and transport. II. Silicon Journal of Applied Physics. 100. DOI: 10.1063/1.2259820  0.216
2005 Rakshit T, Liang GC, Ghosh AW, Datta S. Modeling challenges in molecular electronics on silicon Journal of Computational Electronics. 4: 83-86. DOI: 10.1007/S10825-005-7113-X  0.208
2021 Kumar D, Hsu CH, Sharma R, Chang TR, Yu P, Wang J, Eda G, Liang G, Yang H. Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe. Nature Nanotechnology. PMID 33495620 DOI: 10.1038/s41565-020-00839-3  0.205
2015 Dong Y, Wang W, Lei D, Gong X, Zhou Q, Lee SY, Loke WK, Yoon SF, Tok ES, Liang G, Yeo YC. Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique Optics Express. 23: 18611-18619. DOI: 10.1364/OE.23.018611  0.198
2014 Low KL, Yeo YC, Liang G. Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond Device Research Conference - Conference Digest, Drc. 203-204. DOI: 10.1109/DRC.2014.6872368  0.198
2005 Liang GC, Ghosh AW. Identifying contact effects in electronic conduction through C60 on silicon. Physical Review Letters. 95: 076403. PMID 16196805 DOI: 10.1103/PhysRevLett.95.076403  0.197
2016 Yadav S, Tan KH, Annie, Goh KH, Subramanian S, Low KL, Chen N, Jia B, Yoon SF, Liang G, Gong X, Yeo YC. First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules Technical Digest - International Electron Devices Meeting, Iedm. 2016: 2.3.1-2.3.4. DOI: 10.1109/IEDM.2015.7409612  0.193
2008 Tan SG, Jalil MBA, Kumar SB, Liang G. Spin tunneling in multilayer spintronic devices Physical Review B. 77. DOI: 10.1103/PHYSREVB.77.085424  0.19
2016 Dong Y, Wang W, Lee SY, Lei D, Gong X, Loke WK, Yoon SF, Liang G, Yeo YC. Avalanche photodiode featuring Germanium-tin multiple quantum wells on silicon: Extending photodetection to wavelengths of 2 μm and beyond Technical Digest - International Electron Devices Meeting, Iedm. 2016: 30.5.1-30.5.4. DOI: 10.1109/IEDM.2015.7409802  0.172
2016 Wang W, Dong Y, Lee SY, Loke WK, Gong X, Yoon SF, Liang G, Yeo YC. Germanium-Tin heterojunction phototransistor: Towards high-efficiency low-power photodetection in short-wave infrared range Digest of Technical Papers - Symposium On Vlsi Technology. 2016. DOI: 10.1109/VLSIT.2016.7573449  0.145
2016 Gong X, Yadav S, Goh KH, Tan KH, Kumar A, Low KL, Jia B, Yoon S, Liang G, Yeo Y. (Invited) Enabling Hetero-Integration of III-V and Ge-Based Transistors on Silicon with Ultra-Thin Buffers Formed by Interfacial Misfit Technique Ecs Transactions. 75: 421-437. DOI: 10.1149/07508.0421ECST  0.139
2021 Lukman S, Ding L, Xu L, Tao Y, Riis-Jensen AC, Zhang G, Wu QYS, Yang M, Luo S, Hsu C, Yao L, Liang G, Lin H, Zhang YW, Thygesen KS, et al. Author Correction: High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection. Nature Nanotechnology. PMID 33547454 DOI: 10.1038/s41565-021-00865-9  0.121
2020 Cai K, Zhu Z, Lee JM, Mishra R, Ren L, Pollard SD, He P, Liang G, Teo KL, Yang H. Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets Nature Electronics. 3: 37-42. DOI: 10.1038/s41928-019-0345-8  0.085
2003 Rakshit T, Liang GC, Ghosh A, Datta S. Egative differential resistance in silicon-molecule hetero structure 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 210-211. DOI: 10.1109/ISDRS.2003.1272064  0.067
2022 Lukman S, Ding L, Xu L, Tao Y, Riis-Jensen AC, Zhang G, Wu QS, Yang M, Luo S, Hsu C, Yao L, Liang G, Lin H, Zhang YW, Thygesen KS, et al. Reply to: Detectivities of WS/HfS heterojunctions. Nature Nanotechnology. 17: 220-221. PMID 35273360 DOI: 10.1038/s41565-022-01077-5  0.024
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