Michael J. Lukitsch, Ph.D.
Affiliations: | 2007 | Wayne State University, Detroit, MI, United States |
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"Michael Lukitsch"Parents
Sign in to add mentor| Gregory Auner | grad student | 2007 | Wayne State | |
| (Growth and characterization of aluminum indium nitride thin films grown by plasma source molecular beam epitaxy.) | ||||
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Publications
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| Cheng YT, Weiner AM, Wong CA, et al. (2002) Stress-induced growth of bismuth nanowires Applied Physics Letters. 81: 3248-3250 |
| Danylyuk YV, Lukitsch MJ, Huang C, et al. (2001) Optical and electrical properties of Al1-xInxN films grown on sapphire (0001) by plasma source molecular beam epitaxy Materials Research Society Symposium - Proceedings. 639: G6.29.1-G6.29.5 |
| Naik VM, Weber WH, Uy D, et al. (2001) Ultraviolet and visible resonance-enhanced Raman scattering in epitaxial Al1-xInxN thin films Applied Physics Letters. 79: 2019-2021 |
| Lukitsch MJ, Danylyuk YV, Naik VM, et al. (2001) Optical and electrical properties of Al1 - xInxN films grown by plasma source molecular-beam epitaxy Applied Physics Letters. 79: 632-634 |
| Zhao Q, Lukitsch M, Xu J, et al. (2000) Development of wide bandgap semiconductor photonic device structures by excimer laser micromachining Mrs Internet Journal of Nitride Semiconductor Research. 5: 852-858 |
| Lukitsch MJ, Auner GW, Naik R, et al. (2000) Growth and Characterization of Epitaxial Al1−xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy Mrs Proceedings. 639 |
| Zhao Q, Lukitsch M, Xu J, et al. (1999) Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining Mrs Proceedings. 595 |
| Lukitsch MJ, Benci JE. (1998) Processing and Characterization of Al 2 Ti/Al 3 Ti Two-Phase Alloys Mrs Proceedings. 552 |