Nuggehalli Ravindra
Affiliations: | Materials Science and Engineering | New Jersey Institute of Technology, Newark, NJ, United States |
Area:
Biomedical EngineeringGoogle:
"Nuggehalli Ravindra"Children
Sign in to add traineeJesse S. Appel | grad student | 2008 | NJIT |
Chuan Li | grad student | 2009 | NJIT |
Rene D. Rivero | grad student | 2011 | NJIT |
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Publications
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Basnyat P, Sopori B, Devayajanam S, et al. (2015) Experimental study to separate surface and bulk contributions of light-induced degradation in crystalline silicon solar cells Emerging Materials Research. 4: 239-246 |
Sahoo SK, Sopori BL, Misra D, et al. (2014) Impact of interface trap density at metal/SiNx/n+MOS capacitor in multilayered Si solar cells Emerging Materials Research. 3: 101-105 |
Sopori B, Devayajanam S, Basnyat P, et al. (2014) A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers: Toward a stable and uniform passivation Materials Research Society Symposium Proceedings. 1670 |
Budhraja V, Sopori B, Ravindra N, et al. (2014) Improved dislocation model of silicon solar cells with the effect of front and back surface recombination velocity Progress in Photovoltaics: Research and Applications. 22: 1256-1266 |
Banobre A, Padron I, Fiory AT, et al. (2012) Metal diaphragm based magnetic field sensor Tms Annual Meeting. 1: 693-700 |
Kasisomayajula V, Booty M, Fiory AT, et al. (2012) Magnetic field assisted heterogeneous device assembly Tms Annual Meeting. 1: 651-661 |
Rivero RD, Booty MR, Fiory AT, et al. (2011) Magnetic material interactions for the method of magnetic field directed assembly Tms Annual Meeting. 1: 167-173 |
Rivero RD, Padron I, Booty MR, et al. (2010) Indirect template method of magnetic field assisted assembly Ceramic Transactions. 221: 245-261 |
Rivero RD, Padron I, Booty MR, et al. (2010) Indirect template method of magnetic field assisted assembly Ceramic Transactions. 221: 245-261 |
Rivero RD, Shet S, Booty MR, et al. (2008) Modeling of magnetic-field-assisted assembly of semiconductor devices Journal of Electronic Materials. 37: 374-378 |