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Vijay R. D'Costa, Ph.D. - Publications

Affiliations: 
Arizona State University, Tempe, AZ, United States 
Area:
semiconductors
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 D'Costa VR, Wang W, Yeo Y. Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy Journal of Applied Physics. 120: 063104. DOI: 10.1063/1.4960449  0.381
2016 Wang W, Loke WK, Yin T, Zhang Z, D'Costa VR, Dong Y, Liang G, Pan J, Shen Z, Yoon SF, Tok ES, Yeo Y. Growth and characterization of highly tensile strained Ge1−xSnx formed on relaxed InyGa1−yP buffer layers Journal of Applied Physics. 119: 125303. DOI: 10.1063/1.4944718  0.504
2014 D'Costa VR, Wang W, Zhou Q, Chan TK, Osipowicz T, Tok ES, Yeo YC. Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys Journal of Applied Physics. 116. DOI: 10.1063/1.4892105  0.311
2011 Huang Y, Ryou JH, Dupuis RD, D'costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Journal of Crystal Growth. 314: 92-96. DOI: 10.1016/J.Jcrysgro.2010.11.003  0.311
2010 Tice JB, D'Costa VR, Grzybowski G, Chizmeshya AVG, Tolle J, Menendez J, Kouvetakis J. Synthesis and optical properties of amorphous Si3N 4- xPx dielectrics and complementary insights from ab initio structural simulations Chemistry of Materials. 22: 5296-5305. DOI: 10.1021/Cm101448A  0.647
2010 D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menéndez J. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors Thin Solid Films. 518: 2531-2537. DOI: 10.1016/J.Tsf.2009.09.149  0.636
2009 Tice JB, Weng C, Tolle J, D'Costa VR, Singh R, Menendez J, Kouvetakis J, Chizmeshya AV. Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics. Dalton Transactions (Cambridge, England : 2003). 6773-82. PMID 19690688 DOI: 10.1039/B908280H  0.7
2009 D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menéndez J. Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys. Physical Review Letters. 102: 107403. PMID 19392159 DOI: 10.1103/Physrevlett.102.107403  0.695
2009 D'Costa VR, Tolle J, Xie J, Kouvetakis J, Menéndez J. Infrared dielectric function of p -type Ge0.98 Sn0.02 alloys Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.125209  0.527
2009 D'Costa VR, Fang Y, Mathews J, Roucka R, Tolle J, Menéndez J, Kouvetakis J. Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/11/115006  0.698
2009 Xie J, Tolle J, D'Costa VR, Chizmeshya AVG, Meńndez J, Kouvetakis J. Direct integration of active Ge1-x (Si4 Sn)x semiconductors on Si(100) Applied Physics Letters. 95. DOI: 10.1063/1.3242002  0.647
2009 Fang YY, Tolle J, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menendez J. Practical B and P doping via Six Sny Ge1-x-y-z Mz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior Applied Physics Letters. 95. DOI: 10.1063/1.3204456  0.646
2009 Tolle J, Roucka R, Forrest B, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Poweleit CD, Groenert M, Sato T, Menéndez J. Integration of Zn-Cd-Te-Se Semiconductors on Si platforms via structurally designed cubic templates based on group IV elements Chemistry of Materials. 21: 3143-3152. DOI: 10.1021/Cm900437Y  0.638
2009 Fang YY, D'Costa VR, Tolle J, Tice JB, Poweleit CD, Menéndez J, Kouvetakis J. Highly strained metastable structures and selective area epitaxy of Ge-rich Ge1-xSix/Si(100) materials using nanoscale building blocks Solid State Communications. 149: 78-81. DOI: 10.1016/J.Ssc.2008.10.009  0.71
2008 Fang YY, Xie J, Tolle J, Roucka R, D'Costa VR, Chizmeshya AV, Menendez J, Kouvetakis J. Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics. Journal of the American Chemical Society. 130: 16095-102. PMID 19032100 DOI: 10.1021/Ja806636C  0.671
2008 Kouvetakis J, Tolle J, Roucka R, D'Costa VR, Fang YY, Chizmeshya AVG, Menendez J. Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds Ecs Transactions. 16: 807-821. DOI: 10.1149/1.2986840  0.346
2008 Kouvetakis J, An YJ, D'Costa VR, Tolle J, Chizmeshya AVG, Menéndez J, Roucka R. Synthesis of (Hf, Zr)B2-based heterostructures: Hybrid substrate systems for low temperature Al-Ga-N integration with Si Journal of Materials Chemistry. 18: 4775-4782. DOI: 10.1039/B807097K  0.711
2008 Roucka R, D'Costa VR, An YJ, Canonico M, Kouvetakis J, Menéndez J, Chizmeshya AVG. Thermoelastic and optical properties of thick boride templates on silicon for nitride integration applications Chemistry of Materials. 20: 1431-1442. DOI: 10.1021/Cm702547P  0.75
2008 Fang YY, D'Costa VR, Tolle J, Poweleit CD, Kouvetakis J, Menéndez J. Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100) Thin Solid Films. 516: 8327-8332. DOI: 10.1016/J.Tsf.2008.03.045  0.698
2008 Roucka R, An YJ, Chizmeshya AVG, D'Costa VR, Tolle J, Menéndez J, Kouvetakis J. Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates Solid-State Electronics. 52: 1687-1690. DOI: 10.1016/J.Sse.2008.07.013  0.706
2007 D'Costa VR, Tolle J, Poweleit CD, Kouvetakis J, Menéndez J. Compositional dependence of Raman frequencies in ternary Ge1-x-y Six Sny alloys Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.035211  0.667
2007 Fang YY, Tolle J, Roucka R, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Meńndez J. Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100) Applied Physics Letters. 90. DOI: 10.1063/1.2472273  0.493
2007 Roucka R, Tolle J, Forrest B, Kouvetakis J, D'costa VR, Meńndez J. Ge1-y Sny Si (100) composite substrates for growth of Inx Ga1-x As and Ga As1-x Sbx alloys Journal of Applied Physics. 101. DOI: 10.1063/1.2407274  0.523
2007 Fang YY, Tolle J, Tice J, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menéndez J. Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry Chemistry of Materials. 19: 5910-5925. DOI: 10.1021/Cm071581V  0.676
2007 D'Costa VR, Tolle J, Roucka R, Poweleit CD, Kouvetakis J, Menéndez J. Raman scattering in Ge1-ySny alloys Solid State Communications. 144: 240-244. DOI: 10.1016/J.Ssc.2007.08.020  0.537
2007 Kouvetakis J, Tolle J, Menendez J, D'Costa VR. Advances in Si-Ge-Sn materials science and technology Ieee International Conference On Group Iv Photonics Gfp. 201-203.  0.339
2006 D'Costa VR, Cook CS, Birdwell AG, Littler CL, Canonico M, Zollner S, Kouvetakis J, Menéndez J. Optical critical points of thin-film Ge1-y Sny alloys: A comparative Ge1-y Sny Ge1-x six study Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125207  0.733
2006 Tolle J, Chizmeshya AVG, Fang YY, Kouvetakis J, D'Costa VR, Hu CW, Menéndez J, Tsong IST. Low temperature chemical vapor deposition of Si-based compounds via SiH 3SiH 2SiH 3: Metastable SiSn/GeSn/Si(100) heteroepitaxial structures Applied Physics Letters. 89. DOI: 10.1063/1.2403903  0.681
2006 Roucka R, An Y, Chizmeshya AVG, Tolle J, Kouvetakis J, D'Costa VR, Menéndez J, Crozier P. Epitaxial semimetallic Hf xZr 1-xB 2 templates for optoelectronic integration on silicon Applied Physics Letters. 89. DOI: 10.1063/1.2403189  0.717
2006 Tolle J, Roucka R, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menéndez J. Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon Applied Physics Letters. 88. DOI: 10.1063/1.2213014  0.636
2006 D'Costa VR, Cook CS, Menéndez J, Tolle J, Kouvetakis J, Zollner S. Transferability of optical bowing parameters between binary and ternary group-IV alloys Solid State Communications. 138: 309-313. DOI: 10.1016/J.Ssc.2006.02.023  0.584
2005 Tolle J, Roucka R, D'Costa V, Menendez J, Chizmeshya A, Kouvetakis J. Sn-based Group-IV Semiconductors on Si: New Infrared Materials and New Templates for Mismatched Epitaxy Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee12-08  0.693
2005 Hu C, Tsong IST, D'Costa V, Meńndez J, Crozier PA, Tolle J, Kouvetakis J. Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH 3) 4-nSiH n hydrides Applied Physics Letters. 87. DOI: 10.1063/1.2011792  0.566
2005 Liu R, Bell A, D'Costa VR, Ponce FA, Chen CQ, Yang JW, Khan MA. The nature of crystalline defects in a-plane GaN films Aip Conference Proceedings. 772: 217-218. DOI: 10.1063/1.1994071  0.322
2005 Cook CS, D'Costa V, Kouvetakis J, Zollner S, Menéndez J. Compositional dependence of critical point transitions in Ge 1-xSn x alloys Aip Conference Proceedings. 772: 65-66. DOI: 10.1063/1.1993997  0.339
2005 Roucka R, Tolle J, Cook C, Chizmeshya AVG, Kouvetakis J, D'Costa V, Menendez J, Chen ZD, Zollner S. Versatile buffer layer architectures based on Ge 1- x Sn x alloys Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922078  0.652
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