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Choelhwyi Bae, Ph.D. - Publications

Affiliations: 
North Carolina State University, Raleigh, NC 
Area:
ultra-thin Si oxyitride devices
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22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Ho TA, Bae C, Nam H, Kim E, Lee SY, Park JH, Shin H. Metallic Ni3S2 Film Grown by Atomic Layer Deposition as an Efficient and Stable Electrocatalyst for Overall Water Splitting. Acs Applied Materials & Interfaces. PMID 29578327 DOI: 10.1021/acsami.8b00813  0.305
2016 Lee MJ, Jang M, Bae CS, Park KS, Kim HJ, Lee S, Lee SW, Kim YO, Cho IH. Effects of Oriental Medicine Kyung-Ok-Ko on Uterine Abnormality in Hyperandrogenized Rats. Rejuvenation Research. PMID 26899592 DOI: 10.1089/rej.2015.1787  0.334
2014 Moon E, Park SW, Chung H, Lee JY, Bae C, Kim JW, Paek J, Kim H. Truncated corner cubes with near-perfect retroreflection efficiency. Applied Optics. 53: 7972-8. PMID 25607875 DOI: 10.1364/Ao.53.007972  0.335
2014 Park SW, Moon E, Chung H, Lee JY, Bae C, Kim JW, Kim H. Quasi-retroreflection from corner cubes with refractive free-form surfaces. Applied Optics. 53: 6605-11. PMID 25322251 DOI: 10.1364/AO.53.006605  0.34
2008 Woo S, Hong H, Kim S, Kim H, Kim J, Jeon H, Bae C, Okada T, Sawada K, Ishida M. Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique Japanese Journal of Applied Physics. 47: 6196-6199. DOI: 10.1143/Jjap.47.6196  0.476
2006 Kim S, Kim J, Choi J, Kang H, Jeon H, Cho W, An K, Chung T, Kim Y, Bae C. Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf ( mp ) 4 Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2189219  0.384
2006 Choi J, Kim S, Kang H, Jeon H, Bae C. Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2163447  0.45
2006 Kim S, Kim JY, Kim J, Choi J, Kang H, Bae C, Jeon H. Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2149210  0.557
2006 Choi J, Kim S, Kim J, Kang H, Jeon H, Bae C. Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods Journal of Vacuum Science and Technology. 24: 900-907. DOI: 10.1116/1.2198865  0.603
2006 Choi J, Kim S, Kim J, Kang H, Jeon H, Bae C. Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates Journal of Vacuum Science and Technology. 24: 678-681. DOI: 10.1116/1.2194029  0.601
2006 Kim S, Kim J, Choi J, Kang H, Jeon H, Bae C. Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma Journal of Vacuum Science & Technology B. 24: 1088-1093. DOI: 10.1116/1.2188405  0.583
2005 Kim J, Kim S, Kang H, Choi J, Jeon H, Cho M, Chung K, Back S, Yoo K, Bae C. Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods Journal of Applied Physics. 98: 94504. DOI: 10.1063/1.2121929  0.486
2005 Kim J, Kim S, Jeon H, Cho M, Chung KB, Bae C. Characteristics of HfO2 thin films grown by plasma atomic layer deposition Applied Physics Letters. 87: 53108. DOI: 10.1063/1.2005370  0.467
2005 Park M, Koo J, Kim J, Jeon H, Bae C, Krug C. Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition Applied Physics Letters. 86: 252110. DOI: 10.1063/1.1944206  0.581
2004 Bae C, Lucovsky G. Low-temperature preparation of GaN-SiO 2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2411-2418. DOI: 10.1116/1.1807411  0.577
2004 Bae C, Lucovsky G. Low-temperature preparation of GaN-SiO 2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2402-2410. DOI: 10.1116/1.1807396  0.592
2004 Bae C, Krug C, Lucovsky G. Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO 2 and Si 3N 4 dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2379-2383. DOI: 10.1116/1.1806439  0.538
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Surface passivation of n-GaN by nitrided-thin-Ga 2O 3/SiO 2 and Si 3N 4 films Journal of Applied Physics. 96: 2674-2680. DOI: 10.1063/1.1772884  0.559
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Work-function difference between AL and n-GaN from Al-gated n-GaN/nitrided-thin-Ga 2O 3/SiO 2 metal oxide semiconductor structures Applied Physics Letters. 84: 5413-5415. DOI: 10.1063/1.1767599  0.527
2003 Bae C, Lucovsky G. Oxide formation and passivation for micro- and nano-electronic devices Applied Surface Science. 212: 644-648. DOI: 10.1016/S0169-4332(03)00139-9  0.571
2003 Lee YM, Wu Y, Bae C, Hong JG, Lucovsky G. Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress Solid-State Electronics. 47: 71-76. DOI: 10.1016/S0038-1101(02)00257-5  0.654
1999 Bae C, Lee J, Lee S, Jung H. Ex situ growth of the c-axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates Journal of Vacuum Science and Technology. 17: 2957-2961. DOI: 10.1116/1.581967  0.311
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