Anupam Madhukar - Publications

Affiliations: 
Biomedical Engineering University of Southern California, Los Angeles, CA, United States 
Area:
General Biophysics, Cell Biology, Systematic Biology, Optics Physics

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Year Citation  Score
2016 Zhang J, Lu S, Chattaraj S, Madhukar A. Triggered single photon emission up to 77K from ordered array of surface curvature-directed mesa-top GaAs/InGaAs single quantum dots. Optics Express. 24: 29955-29962. PMID 28059380 DOI: 10.1364/Oe.24.029955  1
2014 Zhang J, Lingley Z, Lu S, Madhukar A. Nanotemplate-directed InGaAs/GaAs single quantum dots: Toward addressable single photon emitter arrays Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4863680  1
2014 Lingley Z, Lu S, Madhukar A. The dynamics of energy and charge transfer in lead sulfide quantum dot solids Journal of Applied Physics. 115. DOI: 10.1063/1.4866368  1
2013 Lu S, Madhukar A. Inducing repetitive action potential firing in neurons via synthesized photoresponsive nanoscale cellular prostheses. Nanomedicine : Nanotechnology, Biology, and Medicine. 9: 293-301. PMID 22841911 DOI: 10.1016/J.Nano.2012.07.001  1
2011 Lingley Z, Lu S, Madhukar A. A high quantum efficiency preserving approach to ligand exchange on lead sulfide quantum dots and interdot resonant energy transfer. Nano Letters. 11: 2887-91. PMID 21707024 DOI: 10.1021/Nl201351F  1
2010 Lee JK, Lu S, Madhukar A. Real-Time dynamics of Ca2+, caspase-3/7, and morphological changes in retinal ganglion cell apoptosis under elevated pressure. Plos One. 5: e13437. PMID 20976135 DOI: 10.1371/Journal.Pone.0013437  1
2010 Lu S, Madhukar A. Cellular prostheses: functional abiotic nanosystems to probe, manipulate, and endow function in live cells. Nanomedicine : Nanotechnology, Biology, and Medicine. 6: 409-18. PMID 20116456 DOI: 10.1016/J.Nano.2010.01.004  1
2010 Asano T, Fang Z, Madhukar A. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices Journal of Applied Physics. 107. DOI: 10.1063/1.3359704  1
2009 Lu S, Lingley Z, Asano T, Harris D, Barwicz T, Guha S, Madhukar A. Photocurrent induced by nonradiative energy transfer from nanocrystal quantum dots to adjacent silicon nanowire conducting channels: toward a new solar cell paradigm. Nano Letters. 9: 4548-52. PMID 19856942 DOI: 10.1021/Nl903104K  1
2008 Asano T, Madhukar A, Mahalingam K, Brown GJ. Dark current and band profiles in low defect density thick multilayered GaAs/InAs self-assembled quantum dot structures for infrared detectors Journal of Applied Physics. 104. DOI: 10.1063/1.3039799  1
2007 Lu S, Madhukar A. Nonradiative resonant excitation transfer from nanocrystal quantum dots to adjacent quantum channels. Nano Letters. 7: 3443-51. PMID 17956142 DOI: 10.1021/Nl0719731  1
2007 Kim ET, Madhukar A. Growth kinetics and formation of uniform self-assembled InAs/GaAs quantum dots at Solid State Phenomena. 124: 539-542. DOI: 10.4028/Www.Scientific.Net/Ssp.124-126.539  1
2007 Campbell JC, Madhukar A. Quantum-dot infrared photodetectors Proceedings of the Ieee. 95: 1815-1827. DOI: 10.1109/JPROC.2007.900967  1
2006 Lu S, Bansal A, Soussou W, Berger TW, Madhukar A. Receptor-ligand-based specific cell adhesion on solid surfaces: hippocampal neuronal cells on bilinker functionalized glass. Nano Letters. 6: 1977-81. PMID 16968011 DOI: 10.1021/Nl061139W  1
2006 Makeev MA, Madhukar A. Calculation of vertical correlation probability in Ge/Si(001) shallow island quantum dot multilayer systems. Nano Letters. 6: 1279-83. PMID 16771594 DOI: 10.1021/Nl0602600  1
2006 Kim ET, Chen Z, Madhukar A. Two-color InAs/InGaAs quantum-dot infrared photodetectors for mid- and long-wavelength infrared detection Journal of the Korean Physical Society. 49.  1
2005 Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP. Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy. Nano Letters. 5: 969-73. PMID 15884904 DOI: 10.1021/Nl0502625  1
2005 Madhukar A, Lu S, Konkar A, Zhang Y, Ho M, Hughes SM, Alivisatos AP. Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior. Nano Letters. 5: 479-82. PMID 15755098 DOI: 10.1021/Nl047947+  1
2005 Makeev MA, Kalia RK, Nakano A, Vashishta P, Madhukar A. Effect of geometry on stress relaxation in InAs/GaAs rectangular nanomesas: Multimillion-atom molecular dynamics simulations Journal of Applied Physics. 98. DOI: 10.1063/1.1988970  1
2005 Khatsevich S, Rich DH, Kim ET, Madhukar A. Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots Journal of Applied Physics. 97. DOI: 10.1063/1.1935743  1
2004 Makeev MA, Yu W, Madhukar A. Atomic scale stresses and strains in Ge/Si(001) nanopixels: An atomistic simulation study Journal of Applied Physics. 96: 4429-4443. DOI: 10.1063/1.1792811  1
2004 Kim ET, Madhukar A, Ye Z, Campbell JC. High detectivity InAs quantum dot infrared photodetectors Applied Physics Letters. 84: 3277-3279. DOI: 10.1063/1.1719259  1
2004 Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP. Integration of nanocrystal quantum dots with crystalline semiconductor substrates: Structure, Stability, and Optical response Materials Research Society Symposium Proceedings. 854: 58-63.  1
2003 Chen Z, Kim ET, Madhukar A. Temperature-dependent orientation of intraband dipoles of self-assembled InAs/GaAs quantum dot ensembles Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 95-96. DOI: 10.1109/ISCS.2003.1239922  1
2003 Makeev MA, Yu W, Madhukar A. Stress distributions and energetics in the laterally ordered systems of buried pyramidal Ge/Si(001) islands: An atomistic simulation study Physical Review B - Condensed Matter and Materials Physics. 68: 1953011-19530113. DOI: 10.1103/Physrevb.68.195301  1
2003 Makeev MA, Madhukar A. Stress and strain fields from an array of spherical inclusions in semi-infinite elastic media: Ge nanoinclusions in Si Physical Review B - Condensed Matter and Materials Physics. 67: 732011-732014. DOI: 10.1103/Physrevb.67.073201  1
2003 Su X, Kalia RK, Nakano A, Vashishta P, Madhukar A. InAs/GaAs square nanomesas: Multimillion-atom molecular dynamics simulations on parallel computers Journal of Applied Physics. 94: 6762-6773. DOI: 10.1063/1.1609049  1
2002 Chen Z, Kim ET, Madhukar A. Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in n-i-n photodetector structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1243-1246. DOI: 10.1116/1.1463721  1
2002 Kim ET, Chen Z, Ho M, Madhukar A. Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1-xAs capping layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1188-1191. DOI: 10.1116/1.1463695  1
2002 Kim ET, Chen Z, Madhukar A. Selective manipulation of self-assembled quantum dot electronic states via use of a lateral potential confinement layer Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 281. DOI: 10.1109/MBE.2002.1037869  1
2002 Rosen IG, Parent T, Fidan B, Wang C, Madhukar A. Design, development, and testing of real-time feedback controllers for semiconductor etching processes using in situ spectroscopic ellipsometry sensing Ieee Transactions On Control Systems Technology. 10: 64-75. DOI: 10.1109/87.974339  1
2002 Makeev MA, Madhukar A. Large-scale atomistic simulations of atomic displacements, stresses, and strains in nanoscale mesas: Effect of mesa edges, corners, and interfaces Applied Physics Letters. 81: 3789-3791. DOI: 10.1063/1.1518150  1
2002 Kim ET, Chen Z, Madhukar A. Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer Applied Physics Letters. 81: 3473-3475. DOI: 10.1063/1.1517710  1
2002 Chen Z, Kim ET, Madhukar A. Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots Applied Physics Letters. 80: 2770-2772. DOI: 10.1063/1.1468896  1
2002 Chen Z, Kim ET, Madhukar A. Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots Applied Physics Letters. 80: 2490-2492. DOI: 10.1063/1.1467974  1
2001 Gary Rosen I, Parent T, Cooper C, Chen P, Madhukar A. A neural-network-based approach to determining a robust process recipe for the plasma-enhanced deposition of silicon nitride thin films Ieee Transactions On Control Systems Technology. 9: 271-284. DOI: 10.1109/87.911379  1
2001 Makeev MA, Madhukar A. Simulations of atomic level stresses in systems of buried Ge/Si islands Physical Review Letters. 86: 5542-5545. DOI: 10.1103/PhysRevLett.86.5542  1
2001 Su X, Kalia RK, Nakano A, Vashishta P, Madhukar A. Critical lateral size for stress domain formation in InAs/GaAs square nanomesas: A multimillion-atom molecular dynamics study Applied Physics Letters. 79: 4577-4579. DOI: 10.1063/1.1428621  1
2001 Kim ET, Chen Z, Madhukar A. Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells Applied Physics Letters. 79: 3341-3343. DOI: 10.1063/1.1417513  1
2001 Su X, Kalia RK, Nakano A, Vashishta P, Madhukar A. Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas Applied Physics Letters. 78: 3717-3719. DOI: 10.1063/1.1377618  1
2001 Resch R, Meltzer S, Vallant T, Hoffmann H, Koel BE, Madhukar A, Requicha AAG, Will P. Immobilizing Au nanoparticles on SiO2 surfaces using octadecylsiloxane monolayers Langmuir. 17: 5666-5670. DOI: 10.1021/La001296P  1
2001 Meltzer S, Resch R, Koel BE, Thompson ME, Madhukar A, Requicha AAG, Will P. Fabrication of nanostructures by hydroxylamine seeding of gold nanoparticle templates Langmuir. 17: 1713-1718. DOI: 10.1021/La001170S  1
2001 Fidan B, Rosen IG, Parent T, Madhukar A. Multi-variable adaptive control of CF4/O2 plasma etching of silicon nitride thin films Proceedings of the American Control Conference. 2: 1280-1285.  1
2000 Rich DH, Zhang C, Mukhametzhanov I, Madhukar A. Cathodoluminescence wavelength imaging study of clustering in InAs/GaAs self-assembled quantum dots Materials Research Society Symposium - Proceedings. 618: 173-178. DOI: 10.1557/Proc-618-173  1
2000 Rosen IG, Parent T, Fidan B, Madhukar A. In-situ spectroscopic ellipsometry for the real time process control of plasma etching of silicon nitride Materials Research Society Symposium - Proceedings. 591: 263-268. DOI: 10.1557/Proc-591-263  1
2000 Heitz R, Stier O, Mukhametzhanov I, Madhukar A, Bimberg D. Quantum size effect in self-organized InAs/GaAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 62: 11017-11028. DOI: 10.1103/Physrevb.62.11017  1
2000 Rich DH, Zhang C, Mukhametzhanov I, Madhukar A. Cathodoluminescence wavelength imaging of μm-scale energy variations in InAs/GaAs self-assembled quantum dots Applied Physics Letters. 76: 3597-3599. DOI: 10.1063/1.126718  1
2000 Fidan B, Parent T, Rosen G, Madhukar A. Spectroscopic ellipsometry (SE) based real-time control of C F4/O2 plasma etching of silicon nitride Proceedings of the American Control Conference. 6: 4006-4010.  1
1999 Wang C, Chen P, Madhukar A, Khan T. A machine condition transfer function approach to run-to-run and machine-to-machine reproducibility of III-V compound semiconductor molecular beam epitaxical growth Ieee Transactions On Semiconductor Manufacturing. 12: 66-75. DOI: 10.1109/66.744525  1
1999 Heitz R, Mukhametzhanov I, Stier O, Madhukar A, Bimberg D. Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots Physical Review Letters. 83: 4654-4657. DOI: 10.1103/Physrevlett.83.4654  1
1999 Mukhametzhanov I, Wei Z, Heitz R, Madhukar A. Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution Applied Physics Letters. 75: 85-87. DOI: 10.1063/1.124284  1
1999 Resch R, Baur C, Bugacov A, Koel BE, Echternach PM, Madhukar A, Montoya N, Requicha AAG, Will P. Linking and manipulation of gold multinanoparticle structures using dithiols and scanning force microscopy Journal of Physical Chemistry B. 103: 3647-3650. DOI: 10.1021/Jp984508O  1
1999 Heitz R, Mukhametzhanov I, Madhukar A, Hoffmann A, Bimberg D. Temperature dependent optical properties of self-organized InAs/GaAs quantum dots Journal of Electronic Materials. 28: 520-527. DOI: 10.1007/S11664-999-0105-Z  1
1999 Mukhametzhanov I, Madhukar A. Room temperature electroluminescence at 1.3 μm from strained InAs/GaAs quantum dots Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 305-306.  1
1999 Parent T, Tie J, Madhukar A. In-situ spectroscopic ellipsometry and optical emission studies of CF4/O2 plasma etching of silicon nitride Materials Research Society Symposium - Proceedings. 569: 89-94.  1
1999 Requicha AAG, Resch R, Montoya N, Koel BE, Madhukar A, Will P. Towards hierarchical nanoassembly Ieee International Conference On Intelligent Robots and Systems. 2: 889-893.  1
1998 Parent T, Heitz R, Chen P, Madhukar A. Real-time feedback control of thermal CL2 etching of GaAs based on in-situ spectroscopic ellipsometry Materials Research Society Symposium - Proceedings. 502: 71-76. DOI: 10.1557/Proc-502-71  1
1998 Konkar A, Heitz R, Ramachandran TR, Chen P, Madhukar A. Fabrication of strained InAs island ensembles on nonplanar patterned GaAs(001) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1334-1338. DOI: 10.1116/1.590070  1
1998 Ramachandran TR, Madhukar A, Chen P, Koel BE. Imaging and direct manipulation of nanoscale three-dimensional features using the noncontact atomic force microscope Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1425-1429. DOI: 10.1116/1.581162  1
1998 Heitz R, Mukhametzhanov I, Chen P, Madhukar A. Excitation transfer in self-organized asymmetric quantum dot pairs Physical Review B - Condensed Matter and Materials Physics. 58. DOI: 10.1103/Physrevb.58.R10151  1
1998 Rich DH, Tang Y, Konkar A, Chen P, Madhukar A. Polarized cathodoluminescence study of selectively grown self-assembled InAs/GaAs quantum dots Journal of Applied Physics. 84: 6337-6344. DOI: 10.1063/1.368959  1
1998 Mukhametzhanov I, Heitz R, Zeng J, Chen P, Madhukar A. Independent manipulation of density and size of stress-driven self-assembled quantum dots Applied Physics Letters. 73: 1841-1843. DOI: 10.1063/1.122300  1
1998 Konkar A, Madhukar A, Chen P. Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates Applied Physics Letters. 72: 220-222. DOI: 10.1063/1.120691  1
1998 Resch R, Baur C, Bugacov A, Koel BE, Madhukar A, Requicha AAG, Will P. Building and manipulating three-dimensional and linked two-dimensional structures of nanoparticles using scanning force microscopy Langmuir. 14: X-6616. DOI: 10.1021/La980386F  1
1997 Yu W, Madhukar A. Molecular dynamics study of coherent island energetics, stresses, and strains in highly strained epitaxy Physical Review Letters. 79: 905-908. DOI: 10.1103/Physrevlett.79.905  1
1997 Kalburge A, Konkar A, Ramachandran TR, Chen P, Madhukar A. Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth Journal of Applied Physics. 82: 859-864. DOI: 10.1063/1.365785  1
1997 Lin HT, Rich DH, Konkar A, Chen P, Madhukar A. Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescence Journal of Applied Physics. 81: 3186-3195. DOI: 10.1063/1.364148  1
1997 Rich DH, Lin HT, Konkar A, Chen P, Madhukar A. Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes Journal of Applied Physics. 81: 1781-1784. DOI: 10.1063/1.364008  1
1997 Ramachandran TR, Heitz R, Chen P, Madhukar A. Mass transfer in Stranski-Krastanow growth of InAs on GaAs Applied Physics Letters. 70: 640-642. DOI: 10.1063/1.118848  1
1997 Konkar A, Lin HT, Rich DH, Chen P, Madhukar A. Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates Journal of Crystal Growth. 175: 741-746. DOI: 10.1016/S0022-0248(96)00973-6  1
1996 Madhukar A, Yu W, Viswanathan R, Chen P. Some computer simulations of semiconductor thin film growth and strain relaxation in a unified atomistic and kinetic model Materials Research Society Symposium - Proceedings. 408: 413-425. DOI: 10.1557/Proc-408-413  1
1996 Xie Q, Kalburge A, Chen P, Madhukar A. Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001) Ieee Photonics Technology Letters. 8: 965-967. DOI: 10.1109/68.508705  1
1996 Rich DH, Lin HT, Konkar A, Chen P, Madhukar A. Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AIGaAs layers grown on a patterned GaAs(001) substrate Applied Physics Letters. 69: 665-667. DOI: 10.1063/1.117799  1
1996 Kobayashi NP, Ramachandran TR, Chen P, Madhukar A. In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) Applied Physics Letters. 68: 3299-3301. DOI: 10.1063/1.116580  1
1996 Madhukar A. A unified atomistic and kinetic framework for growth front morphology evolution and defect initiation in strained epitaxy Journal of Crystal Growth. 163: 149-164. DOI: 10.1016/0022-0248(95)01055-6  1
1995 Konkar A, Madhukar A, Chen P. Creating three-dimensionally confined nanoscale strained structures via substrate encoded size-reducing epitaxy and the enhancement of critical thickness for island formation Materials Research Society Symposium - Proceedings. 380: 17-22. DOI: 10.1557/Proc-380-17  1
1995 Xie Q, Konkar A, Kalburge A, Ramachandran TR, Chen P, Cartland R, Madhukar A, Lin HT, Rich DH. Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs (100) substrates by molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 642-645. DOI: 10.1116/1.587930  1
1995 Xie Q, Madhukar A, Chen P, Kobayashi NP. Vertically self-organized InAs quantum box islands on GaAs(100) Physical Review Letters. 75: 2542-2545. DOI: 10.1103/Physrevlett.75.2542  1
1995 Viswanathan R, Madhukar A, Ogale SB. Role of step orientation and step-step interaction in the in-situ creation of laterally confined semiconductor nanostructures via growth: a simulated annealing study on a parallel computing platform Journal of Crystal Growth. 150: 190-196. DOI: 10.1016/0022-0248(95)80205-Q  1
1994 Xie Q, Chen P, Madhukar A. InAs island-induced-strain driven adatom migration during GaAs overlayer growth Applied Physics Letters. 65: 2051-2053. DOI: 10.1063/1.112790  1
1994 Madhukar A, Xie Q, Chen P, Konkar A. Nature of strained InAs three-dimensional island formation and distribution on GaAs(100) Applied Physics Letters. 64: 2727-2729. DOI: 10.1063/1.111456  1
1994 Kaviani K, Madhukar A, Brown JJ, Larson LE. Realization of doped-channel MISFETs with high breakdown voltage in AlGaAs/InGaAs based material system Electronics Letters. 30: 669-670. DOI: 10.1049/El:19940444  1
1993 Guha S, Madhukar A. An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates Journal of Applied Physics. 73: 8662-8664. DOI: 10.1063/1.353353  1
1993 Rajkumar KC, Madhukar A, Rammohan K, Rich DH, Chen P, Chen L. Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B Applied Physics Letters. 63: 2905-2907. DOI: 10.1063/1.110268  1
1993 Maa BY, Dapkus PD, Chen P, Madhukar A. Real-time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs Applied Physics Letters. 62: 2551-2553. DOI: 10.1063/1.109293  1
1993 Madhukar A, Rajkumar KC, Chen P. In situ approach to realization of three-dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates Applied Physics Letters. 62: 1547-1549. DOI: 10.1063/1.108636  1
1993 Madhukar A. Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures Thin Solid Films. 231: 8-42. DOI: 10.1016/0040-6090(93)90701-P  1
1993 Kaviani K, Hu K, Xie Q, Madhukar A. Realization of high performance doped-channel MISFETs in highly strained AlGaAs/InGaAs/AlGaAs based quantum wells Journal of Crystal Growth. 127: 68-72. DOI: 10.1016/0022-0248(93)90579-L  1
1992 Hu K, Chen L, Kaviani K, Chen P, Madhukar A. All-Optical Photonic Switches Using Integrated Inverted Asymmetric Fabry-Perot Modulators and Heterojunction Phototransistors Ieee Photonics Technology Letters. 4: 263-266. DOI: 10.1109/68.122387  1
1992 Ogale SB, Madhukar A. Adatom processes near step-edges and evolution of long range order in semiconductor alloys grown from vapor phase Applied Physics Letters. 60: 2095-2097. DOI: 10.1063/1.107100  1
1992 Chen L, Hu K, Kapre RM, Madhukar A. High contrast ratio self-electro-optic effect devices based on inverted InGaAs/GaAs asymmetric Fabry-Perot modulator Applied Physics Letters. 60: 422-424. DOI: 10.1063/1.106622  1
1992 Shushtarian SS, Kanetkar SM, Ogale SB, Madhukar A. Pulsed Ruby laser induced surface oxidation of GaAs using reactive quenching at the liquid-solid interface Materials Letters. 13: 325-329. DOI: 10.1016/0167-577X(92)90062-O  1
1991 Chen P, Rajkumar KC, Madhukar A. Relation between reflection high-energy electron diffraction specular beam intensity and the surface atomic structure/surface morphology of GaAs(111)B Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2312-2316. DOI: 10.1116/1.585739  1
1991 Kim D, Madhukar A. Low-temperature C-V characteristics of Si-doped Al0.3Ga 0.7As and normal n-GaAs/N-Al0.3Ga0.7As isotype heterojunctions grown via molecular beam epitaxy Journal of Applied Physics. 70: 6877-6882. DOI: 10.1063/1.349811  1
1991 Rajkumar KC, Chen P, Madhukar A. "a transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular-beam epitaxy" Journal of Applied Physics. 69: 2219-2223. DOI: 10.1063/1.348699  1
1991 Chen L, Kapre RM, Hu K, Madhukar A. High-contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry-Perot modulator, detector, and resonant tunneling diode Applied Physics Letters. 59: 1523-1525. DOI: 10.1063/1.106270  1
1991 Ogale SB, Madhukar A. Surface-relaxation-controlled mechanism for occurrence of long range ordering in III-V semiconductor alloys grown by molecular beam epitaxy Applied Physics Letters. 59: 1356-1358. DOI: 10.1063/1.105307  1
1991 Tang WC, Rosen HJ, Guha S, Madhukar A. Raman microprobe study of narrow InxGa1-xAs stripes on patterned GaAs(100) substrates Applied Physics Letters. 58: 1644-1646. DOI: 10.1063/1.105151  1
1991 Chen P, Rajkumar KC, Madhukar A. Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111)B substrates Applied Physics Letters. 58: 1771-1773. DOI: 10.1063/1.105086  1
1991 Kapre RM, Madhukar A, Guha S. Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak-to-valley ratios at room temperature Applied Physics Letters. 58: 2255-2257. DOI: 10.1063/1.104943  1
1991 Kapre RM, Madhukar A, Guha S. Highly strained pseudomorphic InxGa1-xAs/AlAs based resonant tunneling diodes grown on patterned and non-patterned GaAs(100) substrates Journal of Crystal Growth. 111: 1110-1115. DOI: 10.1016/0022-0248(91)91143-X  1
1991 Guha S, Rajkumar KC, Madhukar A. The nature and control of morphology and the formation of defects in InGaAs epilayers and InAs/GaAs superlattices grown via MBE on GaAs(100) Journal of Crystal Growth. 111: 434-439. DOI: 10.1016/0022-0248(91)91015-3  1
1990 Kapre R, Madhukar A, Guha S. Ino.25Gao.75As/AlAs-Based Resonant Tunneling Diodes Grown on Prepatterned and Non-Patterned GaAs (100) Substrates Ieee Electron Device Letters. 11: 270-272. DOI: 10.1109/55.55277  1
1990 Guha S, Madhukar A, Rajkumar KC. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa 1-xAs on GaAs(100) Applied Physics Letters. 57: 2110-2112. DOI: 10.1063/1.103914  1
1990 Chen L, Rajkumar KC, Madhukar A. Optical absorption and modulation behavior of strained In xGa1-xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy Applied Physics Letters. 57: 2478-2480. DOI: 10.1063/1.103835  1
1990 Kim D, Madhukar A, Hu KZ, Chen W. Realization of high mobilities at ultralow electron density in GaAs-Al 0.3Ga0.7As inverted heterojunctions Applied Physics Letters. 56: 1874-1876. DOI: 10.1063/1.103074  1
1990 Guha S, Madhukar A, Chen L. Defect reduction in strained InxGa1-xAs via growth on GaAs(100) substrates patterned to submicron dimensions Applied Physics Letters. 56: 2304-2306. DOI: 10.1063/1.102948  1
1990 Kapre R, Madhukar A, Kaviani K, Guha S, Rajkumar KC. Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak-to-valley ratios at room temperature Applied Physics Letters. 56: 922-924. DOI: 10.1063/1.102626  1
1990 Rajkumar KC, Madhukar A, Liu JK, Grunthaner FJ. Observation of a correlation between twin orientation and substrate step direction in thin GaAs films grown on intentionally misoriented Si (100) Applied Physics Letters. 56: 1160-1162. DOI: 10.1063/1.102549  1
1990 Echternach PM, Hu K, Madhukar A, Bozler HM. Transport measurements on a high mobility, ultralow carrier concentration inverted GaAs/AlGaAs heterostructure Physica B: Condensed Matter. 165: 871-872. DOI: 10.1016/S0921-4526(09)80021-5  1
1989 Ghaisas SV, Madhukar A. Surface kinetics and growth interruption in molecular-beam epitaxy of compound semiconductors: A computer simulation study Journal of Applied Physics. 65: 3872-3876. DOI: 10.1063/1.343350  1
1989 Lao P, Tang WC, Madhukar A, Chen P. A combined single-phonon Raman and photoluminescence study of direct and indirect band-gap AlxGa1-xAs alloys grown by molecular-beam epitaxy Journal of Applied Physics. 65: 1676-1682. DOI: 10.1063/1.342938  1
1989 Ghaisas SV, Madhukar A. Nature of the oscillatory surface smoothness and its consequence during molecular-beam epitaxy of strained layers: A computer simulation study Journal of Applied Physics. 65: 1888-1892. DOI: 10.1063/1.342899  1
1989 Ogale SB, Madhukar A. Low-energy ion beam effects on the molecular beam epitaxical growth of III-V compound semiconductors: A Monte Carlo simulation study Applied Physics Letters. 55: 1115-1117. DOI: 10.1063/1.101674  1
1989 Leng J, Qian Y, Chen P, Madhukar A. Disorder activated optical modes and the phonon dispersion of AlxGa1-xAs lattice vibration Solid State Communications. 69: 311-315. DOI: 10.1016/0038-1098(89)90858-2  1
1988 Tang WC, Lao P, Madhukar A. Optical investigation of resonant mixing between electronic and optical vibrational levels in GaAs/AlGax1-xas single quantum wells Proceedings of Spie - the International Society For Optical Engineering. 943: 170-173. DOI: 10.1117/12.947312  1
1988 Madhukar A, Ghaisas SV. The nature of molecular beam epitaxial growth examined via computer simulations Critical Reviews in Solid State and Materials Sciences. 14: 1-130. DOI: 10.1080/01611598808241266  1
1988 Ghaisas SV, Madhukar A. Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study Applied Physics Letters. 53: 1599-1601. DOI: 10.1063/1.99923  1
1988 Ogale SB, Thomsen M, Madhukar A. Surface kinetic processes and the morphology of equilibrium GaAs(100) surfaces: A Monte Carlo study Applied Physics Letters. 52: 723-725. DOI: 10.1063/1.99359  1
1988 Tang WC, Lao PD, Madhukar A, Cho NM. Combined Rayleigh and Raman scattering study of AlxGa 1-xAs grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions Applied Physics Letters. 52: 42-44. DOI: 10.1063/1.99311  1
1988 Ogale SB, Madhukar A, Cho NM. Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile Journal of Applied Physics. 63: 578-580. DOI: 10.1063/1.340092  1
1988 Dong G, Ding X, Huang C, Chen P, Madhukar A. Thermal annealing effect on the Al0.3Ga0.7As surface studied by a combined XPS, HREELS and LEED measurement Solid State Communications. 68: 411-415. DOI: 10.1016/0038-1098(88)90305-5  1
1987 Chen P, Lee TC, Cho NM, Madhukar A. RHEED as a tool for examining kinetic processes at MBE grown surfaces Proceedings of Spie - the International Society For Optical Engineering. 796: 139-148. DOI: 10.1117/12.941010  1
1987 Ghaisas SV, Thomsen M, Ogale SB, Madhukar A. Computer simulation, rheed and photoluminescence studies of the role of growth kinetics in mbe of iii-v semiconductors Proceedings of Spie - the International Society For Optical Engineering. 796: 118-120. DOI: 10.1117/12.941007  1
1987 Cho NM, Ogale SB, Madhukar A. Electron transport in a one-side-modulation-doped single-quantum-well structure: Remote-ion-scattering contribution Physical Review B. 36: 6472-6478. DOI: 10.1103/PhysRevB.36.6472  1
1987 Thomsen M, Madhukar A. Classical description of laser-induced desorption rates Physical Review B. 35: 8131-8143. DOI: 10.1103/Physrevb.35.8131  1
1987 Ogale SB, Madhukar A, Thomsen M. Molecular beam epitaxial growth of III-V compound semiconductor in the presence of a low-energy ion beam: A Monte Carlo simulation study Applied Physics Letters. 51: 837-839. DOI: 10.1063/1.98829  1
1987 Cho NM, Ogale SB, Madhukar A. Low-temperature electron transport in a one-side modulation-doped Al 0.33Ga0.67As/GaAs/Al0.33Ga0.67As single quantum well structure Applied Physics Letters. 51: 1016-1018. DOI: 10.1063/1.98816  1
1987 Kim JY, Chen P, Voillot F, Madhukar A. Photoluminescence and reflection high-energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al 0.33Ga0.67As(100) single quantum wells Applied Physics Letters. 50: 739-741. DOI: 10.1063/1.98084  1
1987 Cho NM, Chen P, Madhukar A. Specular beam intensity behavior in reflection high-energy electron diffraction during molecular beam epitaxial growth of Al0.3Ga 0.7As on GaAs(100) and implications for inverted interfaces Applied Physics Letters. 50: 1909-1911. DOI: 10.1063/1.97683  1
1987 Ogale SB, Madhukar A, Cho NM. Influence of transverse electric field on the photoluminescence linewidth of excitonic transition in quantum wells: Alloy disorder and composition fluctuation contributions Journal of Applied Physics. 62: 1381-1384. DOI: 10.1063/1.339829  1
1987 Vasquez RP, Kuroda RT, Madhukar A. Observation of quantum confinement effect away from the zone center in a spectroscopic ellipsometry study of the dielectric function of single Al 0.3Ga0.7As/GaAs/Al0.3Ga0.7As square quantum wells Journal of Applied Physics. 61: 2973-2978. DOI: 10.1063/1.337846  1
1987 Thomsen M, Madhukar A. Examination of the nature of lattice matched III-V semiconductor interfaces using computer simulated molecular beam epitaxial growth II. AxB1-xC/BC interfaces Journal of Crystal Growth. 84: 98-114. DOI: 10.1016/0022-0248(87)90116-3  1
1987 Thomsen M, Ghaisas SV, Madhukar A. Examination of the nature of lattice matched III-V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces Journal of Crystal Growth. 84: 79-97. DOI: 10.1016/0022-0248(87)90115-1  1
1987 Thomsen M, Madhukar A. Computer simulations of the role of group V molecular reactions at steps during molecular beam epitaxial growth of III-V semiconductors Journal of Crystal Growth. 80: 275-288. DOI: 10.1016/0022-0248(87)90073-X  1
1986 Ghaisas SV, Madhukar A. Role of surface molecular reactions in influencing the growth mechanism and the nature of nonequilibrium surfaces: A monte carlo study of molecular-beam epitaxy Physical Review Letters. 56: 1066-1069. DOI: 10.1103/Physrevlett.56.1066  1
1986 Chen P, Madhukar A, Kim JY, Lee TC. Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growth Applied Physics Letters. 48: 650-652. DOI: 10.1063/1.96733  1
1986 Vasquez RP, Madhukar A, Grunthaner FJ, Naiman ML. An x-ray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si Journal of Applied Physics. 60: 226-233. DOI: 10.1063/1.337801  1
1986 Vasquez RP, Madhukar A. A kinetic model for the thermal nitridation of SiO2/Si Journal of Applied Physics. 60: 234-242. DOI: 10.1063/1.337687  1
1986 Vasquez RP, Madhukar A, Grunthaner FJ, Naiman ML. Distribution of nitrogen and defects in SiOxNy/Si structures formed by the thermal nitridation of SiO2/Si Journal of Applied Physics. 59: 972-975. DOI: 10.1063/1.336576  1
1986 Lee TC, Yen MY, Chen P, Madhukar A. The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1-xAs(100) modulated structures Surface Science. 174: 55-64. DOI: 10.1016/0039-6028(86)90385-7  1
1985 Madhukar A, Ghaisas SV. Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensity Applied Physics Letters. 47: 247-249. DOI: 10.1063/1.96234  1
1985 Vasquez RP, Madhukar A. Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiO xNy/Si structures Applied Physics Letters. 47: 998-1000. DOI: 10.1063/1.95956  1
1985 Vasquez RP, Madhukar A, Grunthaner FJ, Naiman ML. STUDIES OF THE KINETICS AND MECHANISM OF THE THERMAL NITRIDATION OF SiO//2 Applied Physics Letters. 46: 361-363. DOI: 10.1063/1.95631  1
1985 Vasquez RP, Madhukar A, Tanguay AR. Spectroscopic ellipsometry and x-ray photoelectron spectroscopy studies of the annealing behavior of amorphous Si produced by Si ion implantation Journal of Applied Physics. 58: 2337-2343. DOI: 10.1063/1.335956  1
1984 Ogale SB, Madhukar A. Alloy disorder scattering contribution to low-temperature electron mobility in semiconductor quantum well structures Journal of Applied Physics. 56: 368-374. DOI: 10.1063/1.333974  1
1984 Ogale SB, Madhukar A. Quantum size effect in the transport of electrons in semiconductor quantum well structures Journal of Applied Physics. 55: 483-486. DOI: 10.1063/1.333050  1
1983 Singh J, Madhukar A. Prediction of kinetically controlled surface roughening: A Monte Carlo computer-simulation study Physical Review Letters. 51: 794-797. DOI: 10.1103/Physrevlett.51.794  1
1983 Grunthaner PJ, Grunthaner FJ, Madhukar A. An XPS study of silicon/noble metal interfaces: Bonding trends and correlations with the Schottky barrier heights Physica B+C. 117: 831-833. DOI: 10.1016/0378-4363(83)90666-6  1
1983 Madhukar A. Far from equilibrium vapour phase growth of lattice matched III-V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulations Surface Science. 132: 344-374. DOI: 10.1016/0167-2584(83)90167-6  1
1982 Grunthaner FJ, Madhukar A. GROWTH, CHARACTERIZATION, AND PROPERTIES OF METASTABLE AND MODULATED SEMICONDUCTOR STRUCTURES: PROSPECTS FOR FUTURE STUDIES Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 462-467. DOI: 10.1116/1.582628  1
1982 KIM JY, MADHUKAR A. ELECTRONIC STRUCTURE OF GAP-ALP(100) SUPERLATTICES J Vac Sci Technol. 528-530. DOI: 10.1116/1.571753  1
1982 Madhukar A. MODULATED SEMICONDUCTOR STRUCTURES: AN OVERVIEW OF SOME BASIC CONSIDERATIONS FOR GROWTH AND DESIRED ELECTRONIC STRUCTURE Journal of Vacuum Science &Amp; Technology. 20: 149-161. DOI: 10.1116/1.571349  1
1982 Singh J, Madhukar A. Method for calculating the electronic structure induced by short-ranged defects in semiconductors Physical Review B. 25: 7700-7712. DOI: 10.1103/Physrevb.25.7700  1
1982 Horovitz B, Grabowski M, Madhukar A. A theory of cyclotron resonance in a two-dimensional quantum Wigner crystal Surface Science. 113: 318-320. DOI: 10.1016/0167-2584(82)90486-8  1
1982 Grabowski M, Madhukar A. Quantum theory of magnetotransport in two-dimensional systems with electron-impurity, electron-phonon and electron-electron interactions Surface Science. 113: 273-276. DOI: 10.1016/0039-6028(82)90598-2  1
1982 Singh J, Madhukar A. A new method for calculating non-ideal point defect induced electronic structure: Application to GaAs1-xPx:O* Solid State Communications. 41: 947-950. DOI: 10.1016/0038-1098(82)91242-X  1
1982 Singh J, Madhukar A. A derivation for the energy dependence of the density of band tail states in disordered materials Solid State Communications. 41: 241-244. DOI: 10.1016/0038-1098(82)91041-9  1
1982 Grabowski M, Madhukar A. Theory of the transverse static magnetoconductivity in a two-dimensional electron-phonon system Solid State Communications. 41: 29-31. DOI: 10.1016/0038-1098(82)90243-5  1
1981 Grunthaner PJ, Grunthaner FJ, Madhukar A. CHEMICAL BONDING AND CHARGE REDISTRIBUTION: VALENCE BAND AND CORE LEVEL CORRELATIONS FOR THE Ni/Si, Pd/Si, AND Pt/Si SYSTEMS Journal of Vacuum Science &Amp; Technology. 20: 680-683. DOI: 10.1116/1.571627  1
1981 Grunthaner FJ, Lewis BF, Maserjian J, Madhukar A. CHEMICAL STRUCTURE OF TRAPPED CHARGE SITES FORMED AT THE Si/SiO//2 INTERFACE BY IONIZING RADIATION AS DETERMINED BY XPS Journal of Vacuum Science &Amp; Technology. 20: 747-750. DOI: 10.1116/1.571449  1
1981 Singh J, Madhukar A. MONTE CARLO SIMULATION OF THE GROWTH OF A//1// minus //xB//x LAYERS ON LATTICE MATCHED SUBSTRATES IN MOLECULAR BEAM EPITAXY Journal of Vacuum Science &Amp; Technology. 20: 716-719. DOI: 10.1116/1.571437  1
1981 Grunthaner PJ, Grunthaner FJ, Madhukar A, Mayer JW. METAL/SILICON INTERFACE FORMATION: THE Ni/Si AND Pd/Si SYSTEMS Journal of Vacuum Science &Amp; Technology. 19: 649-656. DOI: 10.1116/1.571079  1
1981 Das Sarma S, Madhukar A. IDEAL VACANCY INDUCED BAND GAP LEVELS IN LATTICE MATCHED THIN SUPERLATTICES: THE GaAs-AlAs(100) AND GaSb-InAs(100) SYSTEMS Journal of Vacuum Science &Amp; Technology. 19: 447-452. DOI: 10.1116/1.571036  1
1981 Singh J, Madhukar A. ORIGIN OF U-SHAPED BACKGROUND DENSITY OF INTERFACE STATES AT NONLATTICE MATCHED SEMICONDUCTOR INTERFACES Journal of Vacuum Science &Amp; Technology. 19: 437-442. DOI: 10.1116/1.571034  1
1981 Das Sarma S, Madhukar A. Study of the ideal-vacancy-induced neutral deep levels in III-V compound semiconductors and their ternary alloys Physical Review B. 24: 2051-2068. DOI: 10.1103/Physrevb.24.2051  1
1981 Das Sarma S, Madhukar A. Collective modes of spatially separated, two-component, two-dimensional plasma in solids Physical Review B. 23: 805-815. DOI: 10.1103/Physrevb.23.805  1
1981 Singh J, Madhukar A. The origin and nature of silicon band-gap states at the Si/SiO2 interface Applied Physics Letters. 38: 884-886. DOI: 10.1063/1.92208  1
1981 Sarma SD, Madhukar A. Cation and anion ideal vacancy induced gap levels in some III-V compound semiconductors Solid State Communications. 38: 183-186. DOI: 10.1016/0038-1098(81)91132-7  1
1981 Madhukar A, Delgado J. The electronic structure of Si/GaP(110) interface and superlattice Solid State Communications. 37: 199-203. DOI: 10.1016/0038-1098(81)91013-9  1
1980 Madhukar A, Sarma SD. INTRINSIC AND EXTRINSIC INTERFACE STATES AT LATTICE MATCHED INTERFACES BETWEEN III-V COMPOUND SEMICONDUCTORS: THE InAs/GaSb(110) SYSTEM Journal of Vacuum Science &Amp; Technology. 17: 1120-1127. DOI: 10.1116/1.570626  1
1980 Grunthaner FJ, Lewis BF, Zamini N, Maserjian J, Madhukar A. XPS Studies of Structure-Induced Radiation Effects at the Si/SiO<inf>2</inf> Interface Ieee Transactions On Nuclear Science. 27: 1640-1646. DOI: 10.1109/Tns.1980.4331082  1
1980 Das Sarma S, Madhukar A. Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems Physical Review B. 22: 2823-2836. DOI: 10.1103/Physrevb.22.2823  1
1980 Dandekar NV, Madhukar A, Lowy DN. Study of the electronic structure of model (110) surfaces and interfaces of semi-infinite III-V compound semiconductors: The GaSb-InAs system Physical Review B. 21: 5687-5705. DOI: 10.1103/Physrevb.21.5687  1
1980 Nucho RN, Madhukar A. Electronic structure of SiO2: -quartz and the influence of local disorder Physical Review B. 21: 1576-1588. DOI: 10.1103/Physrevb.21.1576  1
1979 Madhukar A, Dandekar NV, Nucho RN. TWO-DIMENSIONAL EFFECTS AND EFFECTIVE MASSES OF THE InAs/GaSb (001) SUPERLATTICES Journal of Vacuum Science &Amp; Technology. 16: 1507-1511. DOI: 10.1116/1.570235  1
1979 Dandekar NV, Madhukar A, Lowy DN. ELECTRONIC STRUCTURE OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES: APPLICATION OF InAs/GaSb(110) Journal of Vacuum Science &Amp; Technology. 16: 1364-1369. DOI: 10.1116/1.570200  1
1979 Madhukar A, Nucho RN. The electronic structure of InAs/GaSb(001) superlattices-two dimensional effects Solid State Communications. 32: 331-336. DOI: 10.1016/0038-1098(79)90959-1  1
1979 Horovitz B, Madhukar A. Electron-phonon interaction and cyclotron resonance in two-dimensional electron gas Solid State Communications. 32: 695-698. DOI: 10.1016/0038-1098(79)90731-2  1
1978 Nucho RN, Madhukar A. TIGHT-BINDING STUDY OF THE ELECTRONIC STRUCTURE OF THE InAs-GaSb (001) SUPERLATTICE J Vac Sci Technol. 15: 1530-1534. DOI: 10.1116/1.569782  1
1978 Bell B, Madhukar A. Reply to "comment on 'theory of chemisorption on metallic surfaces: Role of intra-adsorbate Coulomb correlation and surface structure' " Physical Review B. 17: 4109-4110. DOI: 10.1103/Physrevb.17.4109  1
1978 Lowy DN, Madhukar A. Study of the interface electronic structure of a model metal-semiconductor interface Physical Review B. 17: 3832-3843. DOI: 10.1103/Physrevb.17.3832  1
1978 Ratner MA, Madhukar A. On the role of nuclear motions in electron and excitation transfer rates: Importance of transfer-integral dependence upon nuclear coordinate Chemical Physics. 30: 201-215. DOI: 10.1016/0301-0104(78)85120-9  1
1978 Madhukar A. Contributions of the electron-electron and electron-phonon interactions to the carrier effective mass in inversion layers Surface Science. 73: 509. DOI: 10.1016/0039-6028(78)90532-0  1
1978 Nucho RN, Madhukar A. ELECTRONIC STRUCTURE OF alpha -QUARTZ AND THE INFLUENCE OF SOME LOCAL DISORDER: A TIGHT BINDING STUDY . 60-64.  1
1977 Madhukar A, Post W. Exact solution for the diffusion of a particle in a medium with site diagonal and off-diagonal dynamic disorder Physical Review Letters. 39: 1424-1427. DOI: 10.1103/Physrevlett.39.1424  1
1977 Madhukar A, Cohen MH. Ideal resistivity in one dimension Physical Review Letters. 38: 85-88. DOI: 10.1103/Physrevlett.38.85  1
1977 Madhukar A. Coupled electron-phonon system in two dimensions and its implications for inversion layers Solid State Communications. 24: 11-14. DOI: 10.1016/0038-1098(77)90554-3  1
1976 Bell B, Madhukar A. Theory of chemisorption on metallic surfaces: Role of intra-adsorbate Coulomb correlation and surface structure Physical Review B. 14: 4281-4294. DOI: 10.1103/Physrevb.14.4281  1
1976 Bell B, Cohen MH, Gomer R, Madhukar A. Comment on "quantum theory of electron stimulated desorption" by W. Brenig Surface Science. 61: 656-658. DOI: 10.1016/0039-6028(76)90073-X  1
1975 Madhukar A, Bell B. Chemisorption on transition-metal surfaces: Screening and polarization versus the intra-adsorbate Coulomb interaction Physical Review Letters. 34: 1631-1634. DOI: 10.1103/Physrevlett.34.1631  1
1975 Madhukar A. Chemisorption bonding and bond lengths on transition metal surfaces: Effect of coordination and valency saturation Solid State Communications. 16: 461-465. DOI: 10.1016/0038-1098(75)90111-8  1
1975 Madhukar A. Structural classification of layered dichalcogenides of group IV B, V B and VI B transition metals Solid State Communications. 16: 383-388. DOI: 10.1016/0038-1098(75)90092-7  1
1974 Madhukar A. Theory of peierls instability in tight-binding quasi one-dimensional solids Solid State Communications. 15: 921-924. DOI: 10.1016/0038-1098(74)90694-2  1
1974 Madhukar A, Hasegawa R. Mechanism for resistivity minimum in amorphous ferromagnets Solid State Communications. 14: 61-64. DOI: 10.1016/0038-1098(74)90232-4  1
1974 Madhukar A. Dimerisation and charge ordering in linear chain organic conductors Chemical Physics Letters. 27: 606-610. DOI: 10.1016/0009-2614(74)80317-9  1
1973 Madhukar A. Chemisorption on transition-metal surfaces: Electronic structure Physical Review B. 8: 4458-4463. DOI: 10.1103/Physrevb.8.4458  1
1973 Madhukar A. Theory of s-d exchange interaction in dilute magnetic alloys: Formalism Physical Review B. 7: 1116-1125. DOI: 10.1103/Physrevb.7.1116  1
1973 Madhukar A. Magnetic ordering versus lattice distortion in very narrow bands Solid State Communications. 13: 1767-1770. DOI: 10.1016/0038-1098(73)90725-4  1
1970 Madhukar A, Tsuei CC. Theory of s-d exchange scattering in dilute magnetic alloys Physics Letters A. 32: 139-141. DOI: 10.1016/0375-9601(70)90240-9  1
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