Year |
Citation |
Score |
2016 |
Mu Y, Zhuang Y, Sampurno Y, Wei X, Ashizawa T, Morishima H, Philipossian A. Effect of pad groove width on slurry mean residence time and slurry utilization efficiency in CMP Microelectronic Engineering. 157: 60-63. DOI: 10.1016/J.Mee.2016.02.035 |
0.693 |
|
2016 |
Han R, Wei X, Zhuang Y, Sampurno YA, Philipossian A. Method for accelerated diamond fracture characterization in chemical mechanical planarization Microelectronic Engineering. 149: 37-40. DOI: 10.1016/J.Mee.2015.09.006 |
0.687 |
|
2012 |
Jiao Y, Zhuang Y, Wei X, Sampurno Y, Meled A, Theng S, Cheng J, Hooper D, Moinpour M, Philipossiana A. Pad wear analysis during interlayer dielectric chemical mechanical planarization Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.022205Jss |
0.74 |
|
2011 |
Liao X, Zhuang Y, Borucki LJ, Theng S, Wei X, Ashizawa T, Philipossian A. Effect of pad surface micro-texture on coefficient of friction and removal rate during copper CMP process Electrochemical and Solid-State Letters. 14. DOI: 10.1149/1.3555072 |
0.667 |
|
2011 |
Jiao Y, Sampurno YA, Zhuang Y, Wei X, Meled A, Philipossian A. Tribological, thermal, and kinetic characterization of 300-mm copper chemical mechanical planarization process Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.05Ec02 |
0.716 |
|
2010 |
Smith J, Wargo C, Kakireddy R, Singh R, Galpin A, Philipossian A, Wei X, Bennedine K, Reversat C, Chabourel A. Retaining Ring Design Impact on CMP Process Stability and Optimization Mrs Proceedings. 1249. DOI: 10.1557/PROC-1249-E02-01 |
0.304 |
|
2010 |
Smith JE, Wargo C, Kakireddy R, Singh R, Galpin A, Philipossian A, Wei X, Bennedine K, Reversat C, Chabourel A. Retaining ring design impact on CMP process stability and optimization Materials Research Society Symposium Proceedings. 1249: 53-60. DOI: 10.1557/Proc-1249-E02-01 |
0.602 |
|
2010 |
Wei X, Zhuang Y, Sampurno Y, Sudargho F, Wargo C, Borucki L, Philipossian A. Tribological, thermal, and wear characteristics of poly(phenylene sulfide) and polyetheretherketone retaining rings in interlayer dielectric CMP Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3483752 |
0.744 |
|
2010 |
Zhuang Y, Liao X, Borucki LJ, Theng S, Wei X, Ashizawa T, Philipossian A. Effect of pad micro-texture on frictional force, removal rate, and wafer topography during copper CMP process Ecs Transactions. 27: 599-604. DOI: 10.1149/1.3360681 |
0.577 |
|
2010 |
Han Z, Zhuang Y, Sampurno Y, Meled A, Jiao Y, Wei X, Cheng J, Moinpour M, Hooper D, Philipossian A. Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process Ecs Transactions. 27: 587-592. DOI: 10.1149/1.3360679 |
0.766 |
|
2010 |
Wei X, Sampurno YA, Zhuang Y, Dittler R, Meled A, Cheng J, Wargo C, Stankowski R, Philipossian A. Effect of retaining ring slot design on slurry film thickness during CMP Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3294496 |
0.703 |
|
2010 |
Meled A, Zhuang Y, Wei X, Cheng J, Sampurno YA, Borucki L, Moinpour M, Hooper D, Philipossian A. Analyses of diamond disk substrate wear and diamond microwear in copper chemical mechanical planarization process Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3273077 |
0.714 |
|
2010 |
Sun T, Borucki L, Zhuang Y, Sampurno Y, Sudargho F, Wei X, Anjur S, Philipossian A. Investigating effect of conditioner aggressiveness on removal rate during interlayer dielectric chemical mechanical planarization through confocal microscopy and dual emission ultraviolet-enhanced fluorescence imaging Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.026501 |
0.74 |
|
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