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Aaron D. Franklin, Ph.D. - Publications

Affiliations: 
2005-2008 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Molecular Physics, Physical Chemistry
Website:
http://franklin.pratt.duke.edu/
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81 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Mastrocinque F, Bullard G, Alatis JA, Albro JA, Nayak A, Williams NX, Kumbhar A, Meikle H, Widel ZXW, Bai Y, Harvey AK, Atkin JM, Waldeck DH, Franklin AD, Therien MJ. Band gap opening of metallic single-walled carbon nanotubes via noncovalent symmetry breaking. Proceedings of the National Academy of Sciences of the United States of America. 121: e2317078121. PMID 38466848 DOI: 10.1073/pnas.2317078121  0.313
2023 Lu S, Smith BN, Meikle H, Therien MJ, Franklin AD. All-Carbon Thin-Film Transistors Using Water-Only Printing. Nano Letters. PMID 36853199 DOI: 10.1021/acs.nanolett.2c04196  0.336
2022 Albarghouthi FM, Williams NX, Doherty JL, Lu S, Franklin AD. Passivation Strategies for Enhancing Solution-Gated Carbon Nanotube Field-Effect Transistor Biosensing Performance and Stability in Ionic Solutions. Acs Applied Nano Materials. 5: 15865-15874. PMID 36815139 DOI: 10.1021/acsanm.2c04098  0.323
2022 Franklin AD, Hersam MC, Wong HP. Carbon nanotube transistors: Making electronics from molecules. Science (New York, N.Y.). 378: 726-732. PMID 36395207 DOI: 10.1126/science.abp8278  0.431
2022 Smith BN, Meikle H, Doherty JL, Lu S, Tutoni G, Becker ML, Therien MJ, Franklin AD. Ionic dielectrics for fully printed carbon nanotube transistors: impact of composition and induced stresses. Nanoscale. PMID 36331392 DOI: 10.1039/d2nr04206a  0.327
2021 Williams NX, Bullard G, Brooke N, Therien MJ, Franklin AD. Printable and recyclable carbon electronics using crystalline nanocellulose dielectrics. Nature Electronics. 4: 261-268. PMID 35372789 DOI: 10.1038/s41928-021-00574-0  0.371
2021 Cardenas JA, Lu S, Williams NX, Doherty JL, Franklin AD. In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability. Ieee Electron Device Letters : a Publication of the Ieee Electron Devices Society. 42: 367-370. PMID 33746353 DOI: 10.1109/led.2021.3055787  0.399
2020 Lu S, Franklin AD. Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications. Nanoscale. PMID 33216106 DOI: 10.1039/d0nr06231f  0.417
2020 Lu S, Zheng J, Cardenas JA, Williams NX, Lin YC, Franklin AD. Uniform and Stable Aerosol Jet Printing of Carbon Nanotube Thin-Film Transistors by Ink Temperature Control. Acs Applied Materials & Interfaces. PMID 32897054 DOI: 10.1021/Acsami.0C12046  0.502
2020 Doherty JL, Noyce SG, Cheng Z, Abuzaid H, Franklin AD. Capping Layers to Improve the Electrical Stress Stability of MoS Transistors. Acs Applied Materials & Interfaces. 12: 35698-35706. PMID 32805797 DOI: 10.1021/Acsami.0C08647  0.377
2020 Cardenas JA, Tsang H, Tong H, Abuzaid H, Price K, Cruz MA, Wiley BJ, Franklin AD, Lazarus N. Flash ablation metallization of conductive thermoplastics Additive Manufacturing. 36: 101409. DOI: 10.1016/J.Addma.2020.101409  0.377
2019 Williams NX, Watson N, Joh DY, Chilkoti A, Franklin AD. Aerosol jet printing of biological inks by ultrasonic delivery. Biofabrication. PMID 31778993 DOI: 10.1088/1758-5090/Ab5Cf5  0.343
2019 Lu S, Cardenas JA, Worsley R, Williams NX, Andrews JB, Casiraghi C, Franklin AD. Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing. Acs Nano. PMID 31578857 DOI: 10.1021/Acsnano.9B04337  0.427
2019 Williams NX, Noyce S, Cardenas JA, Catenacci M, Wiley BJ, Franklin AD. Silver nanowire inks for direct-write electronic tattoo applications. Nanoscale. PMID 31318368 DOI: 10.1039/C9Nr03378E  0.372
2019 Cheng Z, Yu Y, Singh S, Price K, Noyce SG, Lin YC, Cao L, Franklin AD. Immunity to Contact Scaling in MoS Transistors Using in Situ Edge Contacts. Nano Letters. PMID 31283241 DOI: 10.1021/Acs.Nanolett.9B01355  0.413
2019 Noyce SG, Doherty JL, Cheng Z, Han H, Bowen S, Franklin AD. Electronic Stability of Carbon Nanotube Transistors Under Long-term Bias Stress. Nano Letters. PMID 30720283 DOI: 10.1021/Acs.Nanolett.8B03986  0.411
2019 Andrews JB, Ballentine P, Cardenas JA, Lim CJ, Williams NX, Summers JB, Stangler MA, Koester DA, Cummer SA, Franklin AD. Printed Electronic Sensor Array for Mapping Tire Tread Thickness Profiles Ieee Sensors Journal. 19: 8913-8919. DOI: 10.1109/Jsen.2019.2918061  0.386
2019 Lin Y, McGuire F, Noyce S, Williams N, Cheng Z, Andrews J, Franklin AD. Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs Ieee Journal of the Electron Devices Society. 7: 645-649. DOI: 10.1109/Jeds.2019.2922441  0.378
2018 Andrews JB, Mondal K, Neumann T, Cardenas JA, Wang J, Parekh DP, Lin Y, Ballentine P, Dickey MD, Franklin AD. Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors. Acs Nano. PMID 29741864 DOI: 10.1021/Acsnano.8B00909  0.535
2018 Lin Y, McGuire F, Franklin AD. Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 011204. DOI: 10.1116/1.5002558  0.396
2018 Cheng Z, Price K, Franklin AD. Contacting and Gating 2-D Nanomaterials Ieee Transactions On Electron Devices. 65: 4073-4083. DOI: 10.1109/Ted.2018.2865642  0.342
2018 Andrews JB, Cardenas JA, Lim CJ, Noyce SG, Mullett J, Franklin AD. Fully Printed and Flexible Carbon Nanotube Transistors for Pressure Sensing in Automobile Tires Ieee Sensors Journal. 18: 7875-7880. DOI: 10.1109/Jsen.2018.2842139  0.325
2018 Cardenas JA, Catenacci MJ, Andrews JB, Williams NX, Wiley BJ, Franklin AD. In-Place Printing of Carbon Nanotube Transistors at Low Temperature Acs Applied Nano Materials. 1: 1863-1869. DOI: 10.1021/acsanm.8b00269  0.36
2018 Cardenas JA, Upshaw S, Williams NX, Catenacci MJ, Wiley BJ, Franklin AD. Impact of Morphology on Printed Contact Performance in Carbon Nanotube Thin-Film Transistors Advanced Functional Materials. 29: 1805727. DOI: 10.1002/Adfm.201805727  0.487
2017 Mcguire FA, Lin YC, Price KM, Rayner GB, Khandelwal S, Salahuddin S, Franklin AD. Sustained sub-60 mV/decade switching via the negative capacitance effect in MoS2 transistors. Nano Letters. PMID 28691824 DOI: 10.1021/Acs.Nanolett.7B01584  0.369
2017 Price KM, Schauble KE, McGuire FA, Farmer DB, Franklin AD. Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 28653822 DOI: 10.1021/Acsami.7B00538  0.406
2017 Cao C, Andrews JB, Kumar A, Franklin AD. Correction to Improving Contact Interfaces in Fully Printed Carbon Nanotube Thin-Film Transistors. Acs Nano. PMID 28398037 DOI: 10.1021/Acsnano.7B02271  0.486
2017 Cox ND, Cress CD, Rossi JE, Puchades I, Merrill A, Franklin AD, Landi BJ. Modification of Silver/Single-Wall Carbon Nanotube Electrical Contact Interfaces via Ion Irradiation. Acs Applied Materials & Interfaces. PMID 28157281 DOI: 10.1021/Acsami.6B14041  0.417
2017 Joh DY, Mcguire F, Abedini-Nassab R, Andrews JB, Achar RK, Zimmers Z, Mozhdehi D, Blair R, Albarghouthi F, Oles W, Richter J, Fontes CM, Hucknall AM, Yellen BB, Franklin AD, et al. Poly(oligo(ethylene glycol) methyl ether methacrylate) brushes on high-κ metal oxide dielectric surfaces for bioelectrical environments. Acs Applied Materials & Interfaces. PMID 28117566 DOI: 10.1021/Acsami.6B15836  0.331
2017 Andrews JB, Cao C, Brooke MA, Franklin AD. Noninvasive Material Thickness Detection by Aerosol Jet Printed Sensors Enhanced Through Metallic Carbon Nanotube Ink Ieee Sensors Journal. 17: 4612-4618. DOI: 10.1109/Jsen.2017.2710085  0.353
2017 Catenacci MJ, Flowers PF, Cao C, Andrews JB, Franklin AD, Wiley BJ. Fully Printed Memristors from Cu–SiO2 Core–Shell Nanowire Composites Journal of Electronic Materials. 46: 4596-4603. DOI: 10.1007/S11664-017-5445-5  0.347
2017 Cao C, Andrews JB, Franklin AD. Completely Printed, Flexible, Stable, and Hysteresis-Free Carbon Nanotube Thin-Film Transistors via Aerosol Jet Printing Advanced Electronic Materials. 3: 1700057. DOI: 10.1002/Aelm.201700057  0.548
2016 Najmaei S, Lei S, Burke RA, Nichols BM, George A, Ajayan PM, Franklin AD, Lou J, Dubey M. Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic Layers. Scientific Reports. 6: 39465. PMID 27995992 DOI: 10.1038/Srep39465  0.384
2016 Cao C, Andrews JB, Kumar A, Franklin AD. Improving Contact Interfaces in Fully Printed Carbon Nanotube Thin-Film Transistors. Acs Nano. PMID 27097302 DOI: 10.1021/Acsnano.6B00877  0.512
2016 Cheng Z, Cardenas JA, McGuire F, Najmaei S, Franklin AD. Modifying the Ni-MoS2 Contact Interface Using a Broad-Beam Ion Source Ieee Electron Device Letters. 37: 1234-1237. DOI: 10.1109/Led.2016.2591552  0.321
2016 McGuire FA, Cheng Z, Price K, Franklin AD. Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer Applied Physics Letters. 109. DOI: 10.1063/1.4961108  0.347
2015 Cao Q, Han SJ, Tersoff J, Franklin AD, Zhu Y, Zhang Z, Tulevski GS, Tang J, Haensch W. End-bonded contacts for carbon nanotube transistors with low, size-independent resistance. Science (New York, N.Y.). 350: 68-72. PMID 26430114 DOI: 10.1126/Science.Aac8006  0.492
2015 Franklin AD. DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications. Science (New York, N.Y.). 349: aab2750. PMID 26273059 DOI: 10.1126/Science.Aab2750  0.423
2015 Li J, Franklin AD, Liu J. Gate-Free Electrical Breakdown of Metallic Pathways in Single-Walled Carbon Nanotube Crossbar Networks. Nano Letters. 15: 6058-65. PMID 26263184 DOI: 10.1021/Acs.Nanolett.5B02261  0.524
2015 Lee CS, Pop E, Franklin AD, Haensch W, Wong HSP. A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements Ieee Transactions On Electron Devices. 62: 3061-3069. DOI: 10.1109/Ted.2015.2457453  0.481
2015 Lee CS, Pop E, Franklin AD, Haensch W, Wong HSP. A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part II: Extrinsic Elements, Performance Assessment, and Design Optimization Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2457424  0.457
2015 Franklin AD. Carbon Nanotube Electronics Emerging Nanoelectronic Devices. 315-335. DOI: 10.1002/9781118958254.ch16  0.33
2014 Tulevski GS, Franklin AD, Frank D, Lobez JM, Cao Q, Park H, Afzali A, Han SJ, Hannon JB, Haensch W. Toward high-performance digital logic technology with carbon nanotubes. Acs Nano. 8: 8730-45. PMID 25144443 DOI: 10.1021/Nn503627H  0.424
2014 Franklin AD, Farmer DB, Haensch W. Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors. Acs Nano. 8: 7333-9. PMID 24999536 DOI: 10.1021/Nn5024363  0.463
2014 Kim B, Franklin A, Nuckolls C, Haensch W, Tulevski GS. Achieving low-voltage thin-film transistors using carbon nanotubes Applied Physics Letters. 105. DOI: 10.1063/1.4891335  0.517
2013 Shahrjerdi D, Franklin AD, Oida S, Ott JA, Tulevski GS, Haensch W. High-performance air-stable n-type carbon nanotube transistors with erbium contacts. Acs Nano. 7: 8303-8. PMID 24006886 DOI: 10.1021/Nn403935V  0.419
2013 Franklin AD. Electronics: the road to carbon nanotube transistors. Nature. 498: 443-4. PMID 23803839 DOI: 10.1038/498443A  0.462
2013 Franklin AD, Koswatta SO, Farmer DB, Smith JT, Gignac L, Breslin CM, Han SJ, Tulevski GS, Miyazoe H, Haensch W, Tersoff J. Carbon nanotube complementary wrap-gate transistors. Nano Letters. 13: 2490-5. PMID 23638708 DOI: 10.1021/Nl400544Q  0.493
2013 Tulevski GS, Franklin AD, Afzali A. High purity isolation and quantification of semiconducting carbon nanotubes via column chromatography. Acs Nano. 7: 2971-6. PMID 23484490 DOI: 10.1021/Nn400053K  0.458
2013 Smith JT, Franklin AD, Farmer DB, Dimitrakopoulos CD. Reducing contact resistance in graphene devices through contact area patterning. Acs Nano. 7: 3661-7. PMID 23473291 DOI: 10.1021/Nn400671Z  0.363
2013 Franklin AD. Wrapping Carbon Nanotubes in a Gate-All-Around Geometry The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2013.C-1-1  0.498
2013 Luo J, Wei L, Lee CS, Franklin AD, Guan X, Pop E, Antoniadis DA, Philip Wong HS. Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length Ieee Transactions On Electron Devices. 60: 1834-1843. DOI: 10.1109/Ted.2013.2258023  0.462
2013 Franklin AD, Oida S, Farmer DB, Smith JT, Han SJ, Breslin CM, Gignac L. Stacking graphene channels in parallel for enhanced performance with the same footprint Ieee Electron Device Letters. 34: 556-558. DOI: 10.1109/Led.2013.2242428  0.347
2013 Franklin AD, Bojarczuk NA, Copel M. Consistently low subthreshold swing in carbon nanotube transistors using lanthanum oxide Applied Physics Letters. 102. DOI: 10.1063/1.4774000  0.494
2012 Park H, Afzali A, Han SJ, Tulevski GS, Franklin AD, Tersoff J, Hannon JB, Haensch W. High-density integration of carbon nanotubes via chemical self-assembly. Nature Nanotechnology. 7: 787-91. PMID 23103933 DOI: 10.1038/Nnano.2012.189  0.517
2012 Cao Q, Han SJ, Tulevski GS, Franklin AD, Haensch W. Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes. Acs Nano. 6: 6471-7. PMID 22671996 DOI: 10.1021/Nn302185D  0.523
2012 Han SJ, Reddy D, Carpenter GD, Franklin AD, Jenkins KA. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory. Acs Nano. 6: 5220-6. PMID 22582702 DOI: 10.1021/Nn300978C  0.337
2012 Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HS, Haensch W. Variability in carbon nanotube transistors: improving device-to-device consistency. Acs Nano. 6: 1109-15. PMID 22272749 DOI: 10.1021/Nn203516Z  0.507
2012 Franklin AD, Luisier M, Han SJ, Tulevski G, Breslin CM, Gignac L, Lundstrom MS, Haensch W. Sub-10 nm carbon nanotube transistor. Nano Letters. 12: 758-62. PMID 22260387 DOI: 10.1021/Nl203701G  0.525
2012 Franklin AD, Han SJ, Bol AA, Perebeinos V. Double contacts for improved performance of graphene transistors Ieee Electron Device Letters. 33: 17-19. DOI: 10.1109/Led.2011.2173154  0.317
2011 Han SJ, Jenkins KA, Valdes Garcia A, Franklin AD, Bol AA, Haensch W. High-frequency graphene voltage amplifier. Nano Letters. 11: 3690-3. PMID 21805988 DOI: 10.1021/Nl2016637  0.319
2011 Franklin AD, Han SJ, Bol AA, Haensch W. Effects of nanoscale contacts to graphene Ieee Electron Device Letters. 32: 1035-1037. DOI: 10.1109/Led.2011.2158058  0.347
2011 Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB, Haensch W. High device yield carbon nanotube NFETs for high-performance logic applications Technical Digest - International Electron Devices Meeting, Iedm. 23.3.1-23.3.4. DOI: 10.1109/IEDM.2011.6131596  0.358
2010 Franklin AD, Chen Z. Length scaling of carbon nanotube transistors. Nature Nanotechnology. 5: 858-62. PMID 21102468 DOI: 10.1038/Nnano.2010.220  0.475
2010 Westover TL, Franklin AD, Cola BA, Fisher TS, Reifenberger RG. Photo- and thermionic emission from potassium-intercalated carbon nanotube arrays Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 423-434. DOI: 10.1116/1.3368466  0.582
2010 Sayer RA, Kim S, Franklin AD, Mohammadi S, Fisher TS. Shot noise thermometry for thermal characterization of templated carbon nanotubes Ieee Transactions On Components and Packaging Technologies. 33: 178-183. DOI: 10.1109/Tcapt.2009.2038488  0.765
2010 Franklin AD, Lin A, Wong HSP, Chen Z. Current scaling in aligned carbon nanotube array transistors with local bottom gating Ieee Electron Device Letters. 31: 644-646. DOI: 10.1109/Led.2010.2047231  0.541
2010 Han SJ, Chang J, Franklin AD, Bol AA, Loesing R, Guo D, Tulevski GS, Haensch W, Chen Z. Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates Technical Digest - International Electron Devices Meeting, Iedm. 9.1.1-9.1.4. DOI: 10.1109/IEDM.2010.5703326  0.421
2010 Franklin AD, Bol AA, Chen Z. Channel and contact length scaling in carbon nanotube transistors Device Research Conference - Conference Digest, Drc. 275-276. DOI: 10.1109/DRC.2010.5551963  0.379
2009 Claussen JC, Franklin AD, Ul Haque A, Porterfield DM, Fisher TS. Electrochemical biosensor of nanocube-augmented carbon nanotube networks. Acs Nano. 3: 37-44. PMID 19206246 DOI: 10.1021/Nn800682M  0.586
2009 Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 821-826. DOI: 10.1116/1.3054266  0.76
2009 Franklin AD, Sayer RA, Sands TD, Janes DB, Fisher TS. Vertical carbon nanotube devices with nanoscale lengths controlled without lithography Ieee Transactions On Nanotechnology. 8: 469-476. DOI: 10.1109/Tnano.2009.2012399  0.795
2009 Franklin AD, Tulevski G, Hannon JB, Chen Z. Can carbon nanotube transistors be scaled without performance degradation? Technical Digest - International Electron Devices Meeting, Iedm. 23.1.1-23.1.4. DOI: 10.1109/IEDM.2009.5424296  0.363
2008 Smith JT, Hang Q, Franklin AD, Janes DB, Sands TD. Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films Applied Physics Letters. 93. DOI: 10.1063/1.2957991  0.688
2008 Franklin AD, Janes DB, Claussen JC, Fisher TS, Sands TD. Independently addressable fields of porous anodic alumina embedded in Si O2 on Si Applied Physics Letters. 92. DOI: 10.1063/1.2831002  0.754
2008 Voggu R, Rout CS, Franklin AD, Fisher TS, Rao CNR. Extraordinary sensitivity of the electronic structure and properties of single-walled carbon nanotubes to molecular charge-transfer Journal of Physical Chemistry C. 112: 13053-13056. DOI: 10.1021/Jp805136E  0.536
2007 Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 343-347. DOI: 10.1116/1.2647379  0.775
2007 Franklin AD, Smith JT, Sands T, Fisher TS, Choi KS, Janes DB. Controlled decoration of single-walled carbon nanotubes with Pd nanocubes Journal of Physical Chemistry C. 111: 13756-13762. DOI: 10.1021/Jp074411E  0.754
2007 Maschmann MR, Franklin AD, Sands TD, Fisher TS. Optimization of carbon nanotube synthesis from porous anodic Al-Fe-Al templates Carbon. 45: 2290-2296. DOI: 10.1016/J.Carbon.2007.05.031  0.789
2006 Maschmann MR, Franklin AD, Scott A, Janes DB, Sands TD, Fisher TS. Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes. Nano Letters. 6: 2712-7. PMID 17163693 DOI: 10.1021/Nl061652+  0.744
2006 Maschmann MR, Franklin AD, Amama PB, Zakharov DN, Stach EA, Sands TD, Fisher TS. Vertical single- and double-walled carbon nanotubes grown from modified porous anodic alumina templates Nanotechnology. 17: 3925-3929. DOI: 10.1088/0957-4484/17/15/052  0.774
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