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Seth J. Wilk, Ph.D. - Publications

Affiliations: 
2005 Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering
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23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Thornton TJ, Lepkowski W, Wilk SJ. Impact Ionization in SOI MESFETs at the 32-nm Node Ieee Transactions On Electron Devices. 63: 4143-4146. DOI: 10.1109/Ted.2016.2601241  0.67
2015 Lepkowski W, Wilk SJ, Thornton TJ. Complementary SOI MESFETs at the 45-nm CMOS Node Ieee Electron Device Letters. 36: 14-16. DOI: 10.1109/Led.2014.2373148  0.654
2014 Lepkowski W, Wilk SJ, Parsi A, Saraniti M, Ferry D, Thornton TJ. Avalanche breakdown in SOI MESFETs Solid-State Electronics. 91: 78-80. DOI: 10.1016/J.Sse.2013.10.003  0.677
2013 Ghajar MR, Wilk SJ, Lepkowski W, Bakkaloglu B, Thornton TJ. Backgate modulation technique for higher efficiency envelope tracking Ieee Transactions On Microwave Theory and Techniques. 61: 1599-1607. DOI: 10.1109/Tmtt.2013.2247616  0.612
2013 Thornton TJ, Lepkowski W, Wilk SJ, Goryll M, Chen B, Kam J, Bakkaloglu B, Holbert K. Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node Ieee Radiation Effects Data Workshop. DOI: 10.1109/REDW.2013.6658204  0.61
2013 Wilk SJ, Lepkowski W, Chen B, Kam J, Goryll M, Holbert K, Thornton TJ. Radiation effects of high voltage MESFETs at the 45nm node Ieee Radiation Effects Data Workshop. DOI: 10.1109/REDW.2013.6658202  0.621
2013 Wilk SJ, Lepkowski W, Thornton TJ. 32 dBm Power Amplifier on 45 nm SOI CMOS Ieee Microwave and Wireless Components Letters. 23: 161-163. DOI: 10.1109/Lmwc.2013.2245413  0.664
2013 Lepkowski W, Wilk SJ, Kam J, Thornton TJ. 40V MESFETs fabricated on 32nm SOI CMOS Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2013.6658399  0.643
2012 LEPKOWSKI W, WILK SJ, GHAJAR MR, PARSI A, THORNTON TJ. SILICON-ON-INSULATOR MESFETS AT THE 45NM NODE International Journal of High Speed Electronics and Systems. 21: 1250012. DOI: 10.1142/S0129156412500127  0.687
2012 Lepkowski W, Wilk SJ, Ghajar MR, Bakkaloglu B, Thornton TJ. An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330634  0.619
2011 Kim S, Lepkowski W, Wilk SJ, Thornton TJ, Bakkaloglu B. A Low-power CMOS BFSK Transceiver for Health Monitoring Systems. Ieee Biomedical Circuits and Systems Conference : Healthcare Technology : [Proceedings]. Ieee Biomedical Circuits and Systems Conference. 157-160. PMID 24473462 DOI: 10.1109/BioCAS.2011.6107751  0.586
2011 Lepkowski W, Ghajar MR, Wilk SJ, Summers N, Thornton TJ, Fechner PS. Scaling SOI MESFETs to 150-nm CMOS Technologies Ieee Transactions On Electron Devices. 58: 1628-1634. DOI: 10.1109/Ted.2011.2125965  0.472
2010 Wilk SJ, Balijepalli A, Ervin J, Lepkowski W, Thornton TJ. Silicon on Insulator MESFETs for RF Amplifiers. Solid-State Electronics. 54: 336-342. PMID 20657816 DOI: 10.1016/J.Sse.2009.10.016  0.66
2009 Lepkowski W, Ervin J, Wilk SJ, Thornton TJ. SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies Ieee Electron Device Letters. 30: 678-680. DOI: 10.1109/Led.2009.2020523  0.518
2008 Petrossian L, Wilk SJ, Joshi P, Goryll M, Posner JD, Goodnick SM, Thornton TJ. Ion Conductance of Cylindrical Solid State Nanopores Used in Coulter Counting Experiments Mrs Proceedings. 1092. DOI: 10.1557/Proc-1092-Bb02-09  0.713
2008 Petrossian L, Wilk SJ, Joshi P, Goodnick SM, Thornton TJ. Demonstration of Coulter counting through a cylindrical solid state nanopore Journal of Physics: Conference Series. 109: 012028. DOI: 10.1088/1742-6596/109/1/012028  0.611
2007 Wilk SJ, Petrossian L, Goryll M, Thornton TJ, Goodnick SM, Tang JM, Eisenberg RS. Integrated electrodes on a silicon based ion channel measurement platform. Biosensors & Bioelectronics. 23: 183-90. PMID 17507211 DOI: 10.1016/J.Bios.2007.03.030  0.667
2007 Petrossian L, Wilk SJ, Joshi P, Hihath S, Goodnick SM, Thornton TJ. Fabrication of Cylindrical Nanopores and Nanopore Arrays in Silicon-On-Insulator Substrates Ieee\/Asme Journal of Microelectromechanical Systems. 16: 1419-1428. DOI: 10.1109/Jmems.2007.908435  0.686
2007 Petrossian L, Wilk SJ, Joshi P, Hihath S, Posner JD, Goodnick SM, Thornton TJ. High aspect ratio cylindrical nanopores in silicon-on-insulator substrates Solid-State Electronics. 51: 1391-1397. DOI: 10.1016/J.Sse.2007.06.014  0.712
2005 Wilk SJ, Petrossian L, Goryll M, Thornton TJ, Goodnick SM, Tang JM, Eisenberg RS, Saraniti M, Wong D, Schmidt JJ, Montemagno CD. Ion channels on silicon E-Journal of Surface Science and Nanotechnology. 3. DOI: 10.1380/Ejssnt.2005.184  0.636
2004 Goryll M, Wilk S, Laws GM, Goodnick SM, Thornton TJ, Saraniti M, Tang JM, Eisenberg RS. Ion Channel Sensor on a Silicon Support Mrs Proceedings. 820. DOI: 10.1557/Proc-820-O7.2  0.449
2004 Wilk SJ, Goryll M, Laws GM, Goodnick SM, Thornton TJ, Saraniti M, Tang J, Eisenberg RS. Teflon ™-coated silicon apertures for supported lipid bilayer membranes Applied Physics Letters. 85: 3307-3309. DOI: 10.1063/1.1805712  0.635
2003 Goryll M, Wilk S, Laws GM, Thornton T, Goodnick S, Saraniti M, Tang J, Eisenberg RS. Silicon-based ion channel sensor Superlattices and Microstructures. 34: 451-457. DOI: 10.1016/J.Spmi.2004.03.041  0.633
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