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Arokia Nathan - Publications

Affiliations: 
University of Waterloo, Waterloo, ON, Canada 
Area:
Electronics and Electrical Engineering, Computer Science
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319 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Yao G, Ma H, Sambandan S, Robertson J, Nathan A. Indium Silicon Oxide TFT Fully Photolithographically Processed for Circuit Integration Ieee Journal of the Electron Devices Society. 1-1. DOI: 10.1109/Jeds.2020.3017392  0.393
2020 Paxinos K, Antoniou G, Afouxenidis D, Mohamed A, Dikko U, Tsitsimpelis I, Milne WI, Nathan A, Adamopoulos G. Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress Applied Physics Letters. 116: 163505. DOI: 10.1063/1.5142699  0.487
2020 Afouxenidis D, Halcovitch NR, Milne WI, Nathan A, Adamopoulos G. Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications Advanced Electronic Materials. 6: 1900976. DOI: 10.1002/Aelm.201900976  0.352
2019 Jiang C, Choi HW, Cheng X, Ma H, Hasko D, Nathan A. Printed subthreshold organic transistors operating at high gain and ultralow power. Science (New York, N.Y.). 363: 719-723. PMID 30765562 DOI: 10.1126/Science.Aav7057  0.394
2019 Esmaeili-Rad M, Chaji G, Li F, Moradi M, Sazonov A, Nathan A. Impact of Silicon Nitride Gate Dielectric Composition on the Stability of Low Temperature Nanocrystalline Silicon Thin Film Transistors Ecs Transactions. 35: 73-79. DOI: 10.1149/1.3572276  0.351
2019 Rad MR, Chaji GR, Lee C, Striakhilev D, Sazonov A, Nathan A. (Invited) Nanocrystalline Silicon Thin Film Transistors Ecs Transactions. 33: 205-212. DOI: 10.1149/1.3481238  0.315
2019 Chaji GR, Nathan A. Stable Pixel Circuit for Small-Area High-Resolution a-Si:H AMOLED Displays Ecs Transactions. 16: 381-385. DOI: 10.1149/1.2980577  0.355
2019 Mohd Daut MH, Wager JF, Nathan A. ZnON MIS Thin-Film Diodes Ieee Journal of the Electron Devices Society. 7: 375-381. DOI: 10.1109/Jeds.2019.2900542  0.369
2019 Dhara S, Niang KM, Flewitt AJ, Nathan A, Lynch SA. Photoconductive laser spectroscopy as a method to enhance defect spectral signatures in amorphous oxide semiconductor thin-film transistors Applied Physics Letters. 114: 11907. DOI: 10.1063/1.5070141  0.369
2018 Zou J, Zhang K, Cai W, Chen T, Nathan A, Zhang Q. Optical-reconfigurable carbon nanotube and indium-tin-oxide complementary thin-film transistor logic gates. Nanoscale. PMID 29963667 DOI: 10.1039/C8Nr01358F  0.407
2018 Jiang C, Ma H, Nathan A. Stability Analysis of All-Inkjet-Printed Organic Thin-Film Transistors Mrs Advances. 3: 1871-1876. DOI: 10.1557/Adv.2018.25  0.426
2018 Zhou X, Zhang M, Xu Y, Zhou W, Wang K, Nathan A, Wong M, Kwok HS, Ou H, Chen J, Deng S, Xu N. Vertically Integrated Optical Sensor With Photoconductive Gain > 10 and Fill Factor > 70% Ieee Electron Device Letters. 39: 386-389. DOI: 10.1109/Led.2018.2792003  0.415
2018 Nathan A. Editorial For J-EDS Website Ieee Journal of the Electron Devices Society. 6: 743-743. DOI: 10.1109/Jeds.2018.2845058  0.303
2018 Cheng X, Lee S, Nathan A. Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages Ieee Journal of the Electron Devices Society. 6: 195-200. DOI: 10.1109/Jeds.2018.2789579  0.33
2017 Pan J, Wei C, Wang L, Zhuang J, Huang Q, Su W, Cui Z, Nathan A, Lei W, Chen J. Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment. Nanoscale. PMID 29234769 DOI: 10.1039/C7Nr06248F  0.303
2017 Guo Z, Zhou L, Tang Y, Li L, Zhang Z, Yang H, Ma H, Nathan A, Zhao D. Surface/interface carrier transport modulation for constructing photon-alternative ultraviolet detectors based on self-bending assembled ZnO nanowires. Acs Applied Materials & Interfaces. PMID 28816036 DOI: 10.1021/Acsami.7B08066  0.332
2017 Fleet LR, Stott JE, Villis B, Din S, Serri M, Aeppli G, Heutz S, Nathan A. Self-Assembled Molecular Nanowires for High Performance Organic Transistors. Acs Applied Materials & Interfaces. PMID 28547994 DOI: 10.1021/Acsami.7B01449  0.431
2017 Wang K, Ou H, Chen J, Nathan A, Deng S, Xu N. 3-D Dual-Gate Photosensitive Thin-Film Transistor Architectures Based on Amorphous Silicon Ieee Transactions On Electron Devices. 64: 4952-4958. DOI: 10.1109/Ted.2017.2760320  0.43
2017 Cheng X, Lee S, Chaji R, Nathan A. Device-Circuit Interactions and Impact on TFT Circuit-System Design Ieee Journal On Emerging and Selected Topics in Circuits and Systems. 7: 71-80. DOI: 10.1109/Jetcas.2016.2621348  0.419
2017 Jiang C, Ma H, Hasko DG, Guo X, Nathan A. A Lewis-Acid Monopolar Gate Dielectric for All-Inkjet-Printed Highly Bias-Stress Stable Organic Transistors Advanced Electronic Materials. 3: 1700029. DOI: 10.1002/Aelm.201700029  0.388
2016 Lee S, Nathan A. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain. Science (New York, N.Y.). 354: 302-304. PMID 27846559 DOI: 10.1126/Science.Aah5035  0.445
2016 Tsangarides CP, Ma H, Nathan A. ZnO nanowire array growth on precisely controlled patterns of inkjet-printed zinc acetate at low-temperatures. Nanoscale. PMID 27223061 DOI: 10.1039/C6Nr02962K  0.348
2016 Lee S, Nathan A. Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors. Scientific Reports. 6: 22567. PMID 26932790 DOI: 10.1038/Srep22567  0.409
2016 Cheng X, Lee S, Nathan A. TFT Small Signal Model and Analysis Ieee Electron Device Letters. 37: 890-893. DOI: 10.1109/Led.2016.2575924  0.347
2016 Yang Y, Lee S, Holburn D, Nathan A. Mono-Type TFT Logic Architectures for Low Power Systems on Panel Applications Ieee\/Osa Journal of Display Technology. 12: 1-1. DOI: 10.1109/Jdt.2016.2623651  0.364
2016 Cheng X, Lee S, Yao G, Nathan A. TFT Compact Modeling Journal of Display Technology. 12: 898-906. DOI: 10.1109/Jdt.2016.2556980  0.345
2016 Bagheri M, Cheng X, Zhang J, Lee S, Ashtiani S, Nathan A. Threshold Voltage Compensation Error in Voltage Programmed AMOLED Displays Ieee\/Osa Journal of Display Technology. 12: 658-664. DOI: 10.1109/Jdt.2016.2530784  0.47
2016 Jin JW, Nathan A, Barquinha P, Pereira L, Fortunato E, Martins R, Cobb B. Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress Aip Advances. 6: 85321. DOI: 10.1063/1.4962151  0.358
2016 Ma H, Su Y, Jiang C, Nathan A. Inkjet-printed Ag electrodes on paper for high sensitivity impedance measurements Rsc Advances. 6: 84547-84552. DOI: 10.1039/C6Ra18645A  0.33
2016 Feng L, Jiang C, Ma H, Guo X, Nathan A. All ink-jet printed low-voltage organic field-effect transistors on flexible substrate Organic Electronics: Physics, Materials, Applications. 38: 186-192. DOI: 10.1016/J.Orgel.2016.08.019  0.441
2015 Ahnood A, Zhou H, Suzuki Y, Sliz R, Fabritius T, Nathan A, Amaratunga GA. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures. Nanoscale Research Letters. 10: 486. PMID 26676997 DOI: 10.1186/S11671-015-1187-6  0.385
2015 Lee S, Nathan A, Ye Y, Guo Y, Robertson J. Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors. Scientific Reports. 5: 13467. PMID 26304606 DOI: 10.1038/Srep13467  0.341
2015 Jeon S, Ahn SE, Song I, Kim CJ, Chung UI, Lee E, Yoo I, Nathan A, Lee S, Ghaffarzadeh K, Robertson J, Kim K. Corrigendum: Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays. Nature Materials. 14: 452. PMID 25801406 DOI: 10.1038/Nmat4236  0.333
2015 Sliz R, Eneh C, Suzuki Y, Czajkowski J, Fabritius T, Kathirgamanathan P, Nathan A, Myllyla R, Jabbour G. Large area quantitative analysis of nanostructured thin-films Rsc Advances. 5: 12409-12415. DOI: 10.1039/C4Ra16018E  0.353
2015 Lee C, Wong WS, Sazonov A, Nathan A. Study of deposition temperature on high crystallinity nanocrystalline silicon thin films with in-situ hydrogen plasma-passivated grains Thin Solid Films. 597: 151-157. DOI: 10.1016/J.Tsf.2015.11.055  0.433
2015 Ma H, Li J, Cheng X, Nathan A. Heterogeneously integrated impedance measuring system with disposable thin-film electrodes Sensors and Actuators B-Chemical. 211: 77-82. DOI: 10.1016/J.Snb.2015.01.044  0.371
2015 Lei W, Zhu Z, Liu C, Zhang X, Wang B, Nathan A. High-current field-emission of carbon nanotubes and its application as a fast-imaging X-ray source Carbon. 94: 687-693. DOI: 10.1016/J.Carbon.2015.07.044  0.347
2014 Jeon S, Song I, Lee S, Ryu B, Ahn SE, Lee E, Kim Y, Nathan A, Robertson J, Chung UI. Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects. Advanced Materials (Deerfield Beach, Fla.). 26: 7102-9. PMID 25219518 DOI: 10.1002/Adma.201401955  0.365
2014 Zhou H, Tao F, Hiralal P, Ahnood A, Unalan HE, Nathan A, Amaratunga GAJ. Periodic Nanopillar N-I-P Amorphous Si Photovoltaic Cells Using Carbon Nanotube Scaffolds Ieee Transactions On Nanotechnology. 13: 997-1004. DOI: 10.1109/Tnano.2014.2343256  0.361
2014 Lee S, Striakhilev D, Jeon S, Nathan A. Unified Analytic Model for Current–Voltage Behavior in Amorphous Oxide Semiconductor TFTs Ieee Electron Device Letters. 35: 84-86. DOI: 10.1109/Led.2013.2290532  0.413
2014 Sun C, Ahnood A, Lee S, Mathews N, Mhaisalkar S, Nathan A. Top Down Scale-Up of Semiconducting Nanostructures for Large Area Electronics Ieee\/Osa Journal of Display Technology. 10: 660-665. DOI: 10.1109/Jdt.2014.2312792  0.371
2014 Nathan A, Lee S, Jeon S, Robertson J. Amorphous Oxide Semiconductor TFTs for Displays and Imaging Ieee\/Osa Journal of Display Technology. 10: 917-927. DOI: 10.1109/Jdt.2013.2292580  0.342
2014 Thakur B, Lee S, Ahnood A, Jeon S, Sambandan S, Nathan A. Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors Applied Physics Letters. 104: 203505. DOI: 10.1063/1.4879554  0.329
2014 Liu X, Yang X, Liu M, Tao Z, Dai Q, Wei L, Li C, Zhang X, Wang B, Nathan A. Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface Applied Physics Letters. 104: 113501. DOI: 10.1063/1.4868978  0.369
2013 Ahn SE, Jeon S, Jeon YW, Kim C, Lee MJ, Lee CW, Park J, Song I, Nathan A, Lee S, Chung UI. High-performance nanowire oxide photo-thin film transistor. Advanced Materials (Deerfield Beach, Fla.). 25: 5549-54. PMID 24038596 DOI: 10.1002/Adma201301102  0.385
2013 Ahnood A, Zhou H, Dai Q, Vygranenko Y, Suzuki Y, Esmaeili-Rad M, Amaratunga G, Nathan A. Vertical CNT-Si photodiode array. Nano Letters. 13: 4131-6. PMID 23923984 DOI: 10.1021/Nl401636V  0.396
2013 Ma H, Miller B, Lee S, Ahnood A, Bauza M, Milne WI, Nathan A. Amorphous silicon thin film transistor biosensing system Materials Research Society Symposium Proceedings. 1530: 10-15. DOI: 10.1557/Opl.2013.81  0.478
2013 Fortunato N, Jang J, Barquinha P, Nathan A, Martins R. Foreword [Special Issue on the 8th International Thin-Film Transistor Conference (ITC 2012)] Ieee\/Osa Journal of Display Technology. 9: 687-687. DOI: 10.1109/Jdt.2013.2278778  0.316
2013 Lee S, Jeon S, Nathan A. Modeling Sub-Threshold Current–Voltage Characteristics in Thin Film Transistors Ieee\/Osa Journal of Display Technology. 9: 883-889. DOI: 10.1109/Jdt.2013.2256878  0.351
2013 Eda G, Nathan A, Wöbkenberg P, Colleaux F, Ghaffarzadeh K, Anthopoulos TD, Chhowalla M. Graphene oxide gate dielectric for graphene-based monolithic field effect transistors Applied Physics Letters. 102: 133108. DOI: 10.1063/1.4799970  0.354
2013 Nathan A, Lee S, Jeon S, Song I, Chung U. Transparent Oxide Semiconductors for Advanced Display Applications Information Display Archive. 29: 6-11. DOI: 10.1002/J.2637-496X.2013.Tb00577.X  0.42
2013 Martins RFP, Ahnood A, Correia N, Pereira LMNP, Barros R, Barquinha PMCB, Costa R, Ferreira IMM, Nathan A, Fortunato EEMC. Recyclable, Flexible, Low-Power Oxide Electronics Advanced Functional Materials. 23: 2153-2161. DOI: 10.1002/Adfm.201202907  0.413
2012 Ahn SE, Song I, Jeon S, Jeon YW, Kim Y, Kim C, Ryu B, Lee JH, Nathan A, Lee S, Kim GT, Chung UI. Metal oxide thin film phototransistor for remote touch interactive displays. Advanced Materials (Deerfield Beach, Fla.). 24: 2631-6. PMID 22499356 DOI: 10.1002/Adma.201200293  0.358
2012 Jeon S, Ahn SE, Song I, Kim CJ, Chung UI, Lee E, Yoo I, Nathan A, Lee S, Robertson J, Kim K. Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays. Nature Materials. 11: 301-5. PMID 22367002 DOI: 10.1038/Nmat3256  0.362
2012 Yu J, Ying K, Hasko D, Lee S, Ahnood A, Milne WI, Nathan A. Thin Film Coil Design Considerations for Wireless Power Transfer in Flat Panel Display Mrs Proceedings. 1388. DOI: 10.1557/Opl.2012.814  0.322
2012 Suzuki Y, Ibheanacho B, Ahnood A, Kathirgamanathan P, Wong W, Nathan A. Electrical Characterization of Electrochemically Grown ZnO Nanorods using STM Mrs Proceedings. 1391. DOI: 10.1557/Opl.2012.801  0.38
2012 Suzuki Y, Kathirgamanathan P, Nathan A. Investigating the Photoelectrochemistry of Transparent ZnO Grown on ITO/Plastic for Flexible Photoelectrochemical Cell and Photovoltaic Application Mrs Proceedings. 1387. DOI: 10.1557/Opl.2012.1304  0.337
2012 Vygranenko Y, Sazonov A, Fernandes M, Vieira M, Nathan A. Thin-Film Phototransistor with nc-Si:H/a-Si:H Bilayer Channel Mrs Proceedings. 1426: 205-210. DOI: 10.1557/Opl.2012.1180  0.512
2012 Sliz R, Ahnood A, Nathan A, Myllyla R, Jabbour G. Characterization of microcrystalline I-layer for solar cells prepared in low temperature - Plastic compatible process Proceedings of Spie - the International Society For Optical Engineering. 8438. DOI: 10.1117/12.922302  0.458
2012 Lee S, Ahnood A, Sambandan S, Madan A, Nathan A. Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors Ieee Electron Device Letters. 33: 1006-1008. DOI: 10.1109/Led.2012.2193657  0.417
2012 Esmaeili-Rad MR, Papadopoulos NP, Bauza M, Nathan A, Wong WS. Blue-Light-Sensitive Phototransistor for Indirect X-Ray Image Sensors Ieee Electron Device Letters. 33: 567-569. DOI: 10.1109/Led.2012.2185676  0.463
2012 Ahnood A, Nathan A. Flat-Panel Compatible Photovoltaic Energy Harvesting System Ieee\/Osa Journal of Display Technology. 8: 204-211. DOI: 10.1109/Jdt.2011.2175701  0.496
2012 Moradi M, Pathirane M, Sazonov A, Chaji R, Nathan A. TFTs With High Overlay Alignment for Integration of Flexible Display Backplanes Ieee\/Osa Journal of Display Technology. 8: 104-107. DOI: 10.1109/Jdt.2011.2164894  0.519
2012 Lee S, Nathan A. Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements Applied Physics Letters. 101: 113502. DOI: 10.1063/1.4751861  0.32
2012 Ahnood A, Suzuki Y, Madan A, Nathan A. Pulsed-radio frequency plasma enhanced chemical vapour deposition of low temperature silicon nitride for thin film transistors Thin Solid Films. 520: 4831-4834. DOI: 10.1016/J.Tsf.2012.03.010  0.398
2012 Jeyakumar R, Gu Z, Sivoththaman S, Nathan A. Synthesis and characterization of low-k films for large area imaging applications Microelectronic Engineering. 99: 58-61. DOI: 10.1016/J.Mee.2012.06.010  0.417
2011 Stott J, Kumatani A, Minari T, Tsukagoshi K, Heutz S, Aeppli G, Nathan A. Bottom-contact pentacene thin-film transistors on silicon nitride Ieee Electron Device Letters. 32: 1305-1307. DOI: 10.1109/Led.2011.2160520  0.526
2011 Chan I, Moradi M, Sazonov A, Nathan A. 150 $^{\circ}$ C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic Ieee\/Osa Journal of Display Technology. 7: 36-39. DOI: 10.1109/Jdt.2010.2089782  0.504
2011 Moradi M, Fomani AA, Nathan A. Effect of gate dielectric scaling in nanometer scale vertical thin film transistors Applied Physics Letters. 99: 223503. DOI: 10.1063/1.3664217  0.455
2011 Lee S, Ghaffarzadeh K, Nathan A, Robertson J, Jeon S, Kim C, Song I, Chung U. Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors Applied Physics Letters. 98: 203508. DOI: 10.1063/1.3589371  0.344
2011 Fomani AA, Nathan A. Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage Journal of Applied Physics. 109: 84521. DOI: 10.1063/1.3569702  0.446
2010 Vygranenko Y, Sazonov A, Heiler G, Tredwell T, Vieira M, Nathan A. Optimization of the a-SiC p-layer in a-Si:H-based n-i-p Photodiodes Mrs Proceedings. 1245. DOI: 10.1557/Proc-1245-A18-01  0.4
2010 Bauza M, Ahnood A, Li FM, Vygranenko Y, Esmaeili-Rad MR, Chaji G, Sazonov A, Robertson J, Milne WI, Nathan A. Photo-Induced Instability of Nanocrystalline Silicon TFTs Ieee\/Osa Journal of Display Technology. 6: 589-591. DOI: 10.1109/Jdt.2010.2076363  0.419
2010 Ghaffarzadeh K, Nathan A, Robertson J, Kim S, Jeon S, Kim C, Chung U, Lee J. Persistent photoconductivity in Hf–In–Zn–O thin film transistors Applied Physics Letters. 97: 143510. DOI: 10.1063/1.3496029  0.415
2010 Ghaffarzadeh K, Nathan A, Robertson J, Kim S, Jeon S, Kim C, Chung U, Lee J. Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress Applied Physics Letters. 97: 113504. DOI: 10.1063/1.3480547  0.383
2010 Vygranenko Y, Nathan A, Vieira MMAC, Sazonov A. Phototransistor with nanocrystalline Si/amorphous Si bilayer channel Applied Physics Letters. 96: 173507. DOI: 10.1063/1.3422479  0.43
2010 Vygranenko Y, Fathi E, Sazonov A, Vieira M, Nathan A. Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes Solar Energy Materials and Solar Cells. 94: 1860-1863. DOI: 10.1016/J.Solmat.2010.06.044  0.461
2009 Vygranenko Y, Fathi E, Sazonov A, Vieira M, Heiler G, Tredwell T, Nathan A. Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes Mrs Proceedings. 1153. DOI: 10.1557/Proc-1153-A06-02  0.421
2009 Safavian N, Yazdandoost M, Wu D, Sultana A, Izadi MH, Karim KS, Nathan A, Rowlands JA. Characterization of current programmed amorphous silicon active pixel sensor readout circuit for dual mode diagnostic digital x-ray imaging Proceedings of Spie. 7258: 725815. DOI: 10.1117/12.813886  0.68
2009 Wang K, Vygranenko Y, Chaji R, Nathan A. Indium oxides by reactive ion beam assisted evaporation: From material study to device application Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: 612. DOI: 10.1116/1.3093887  0.412
2009 Chaji GR, Nathan A. Fast and Offset-Leakage Insensitive Current-Mode Line Driver for Active Matrix Displays and Sensors Ieee\/Osa Journal of Display Technology. 5: 72-79. DOI: 10.1109/Jdt.2008.2010276  0.408
2009 Bauza M, Mandal NP, Ahnood A, Sazonov A, Nathan A. Light-induced metastability in thin nanocrystalline silicon films Philosophical Magazine. 89: 2531-2539. DOI: 10.1080/14786430902933845  0.407
2009 Vygranenko Y, Sazonov A, Heiler G, Tredwell T, Vieira MMAC, Nathan A. Blue-enhanced thin-film photodiode for dual-screen x-ray imaging Applied Physics Letters. 95: 263505. DOI: 10.1063/1.3276288  0.419
2009 Hsieh GW, Li FM, Beecher P, Nathan A, Wu Y, Ong BS, Milne WI. High performance nanocomposite thin film transistors with bilayer carbon nanotube-polythiophene active channel by ink-jet printing Journal of Applied Physics. 106. DOI: 10.1063/1.3273377  0.378
2009 Ahnood A, Chaji GR, Sazonov A, Nathan A. Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements Applied Physics Letters. 95: 63506. DOI: 10.1063/1.3195641  0.388
2009 Vygranenko Y, Wang K, Chaji R, Vieira M, Robertson J, Nathan A. Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition Thin Solid Films. 517: 6341-6344. DOI: 10.1016/J.Tsf.2009.02.108  0.444
2009 Safavian N, Izadi MH, Sultana A, Wu D, Karim KS, Nathan A, Rowlands JA. Noise analysis of a novel hybrid active-passive pixel sensor for medical X-ray imaging Physica Status Solidi (C) Current Topics in Solid State Physics. 6. DOI: 10.1002/Pssc.200881337  0.627
2009 Moradi M, Nathan A, Haverinen HM, Jabbour GE. Vertical transistor with ultrathin silicon nitride gate dielectric Advanced Materials. 21: 4505-4510. DOI: 10.1002/Adma.200900757  0.466
2008 Wang K, Vygranenko Y, Nathan A. High-mobility Nanocrystalline Indium Oxide TFTs with Silicon Nitride Gate Dielectric Mrs Proceedings. 1074. DOI: 10.1557/Proc-1074-I05-35  0.455
2008 Vygranenko Y, Sazonov A, Striakhilev D, Chang JH, Heiler G, Lai J, Tredwell T, Nathan A. High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk Mrs Proceedings. 1066. DOI: 10.1557/Proc-1066-A19-04  0.442
2008 Chang JH, Tredwell T, Heiler G, Vygranenko Y, Striakhilev D, Kim KH, Nathan A. Physically Based Compact Model for Segmented a-Si:H n-i-p Photodiodes Mrs Proceedings. 1066. DOI: 10.1557/Proc-1066-A18-08  0.407
2008 Fernandes M, Vygranenko Y, Vieira M, Heiler G, Tredwell T, Nathan A. Transient current in a-Si:H-based MIS photosensors Mrs Proceedings. 1066. DOI: 10.1557/Proc-1066-A18-06  0.515
2008 Lai J, Striakhilev D, Vygranenko Y, Heiler G, Nathan A, Tredwell T. Noise Analysis of Image Sensor Arrays for Large-Area Biomedical Imaging Mrs Proceedings. 1066. DOI: 10.1557/Proc-1066-A18-04  0.42
2008 Shin K, Esmaeili-Rad MR, Sazonov A, Nathan A. Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application Mrs Proceedings. 1066. DOI: 10.1557/Proc-1066-A16-07  0.526
2008 Esmaeili-Rad MR, Lee HJ, Sazonov A, Nathan A. Nanocrystalline Silicon Thin Film Transistors For High Performance Large Area Electronics International Journal of High Speed Electronics and Systems. 18: 1055-1068. DOI: 10.1142/S0129156408006004  0.543
2008 Li FM, Hsieh GW, Dalal S, Newton MC, Stott JE, Hiralal P, Nathan A, Warburton PA, Unalan HE, Beecher P, Flewitt AJ, Robinson I, Amaratunga G, Milne WI. Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors Ieee Transactions On Electron Devices. 55: 3001-3011. DOI: 10.1109/Ted.2008.2005180  0.383
2008 Chaji GR, Nathan A. A Current-Mode Comparator for Digital Calibration of Amorphous Silicon AMOLED Displays Ieee Transactions On Circuits and Systems Ii-Express Briefs. 55: 614-618. DOI: 10.1109/Tcsii.2008.921586  0.517
2008 Chaji GR, Nathan A. Low-Power Low-Cost Voltage-Programmed a-Si:H AMOLED Display for Portable Devices Ieee\/Osa Journal of Display Technology. 4: 233-237. DOI: 10.1109/Jdt.2008.916058  0.447
2008 Safavian N, Karim KS, Nathan A, Rowlands JA. A 3-TFT hybrid active-passive pixel with correlated double sampling CMOS readout circuit for real-time medical x-ray imaging Esscirc 2008 - Proceedings of the 34th European Solid-State Circuits Conference. 122-125. DOI: 10.1109/ESSCIRC.2008.4681807  0.667
2008 Li FM, Nathan A, Wu Y, Ong BS. A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration Journal of Applied Physics. 104: 124504. DOI: 10.1063/1.3029704  0.49
2008 Chaji G, Nathan A, Pankhurst Q. Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging Applied Physics Letters. 93: 203504. DOI: 10.1063/1.3002320  0.445
2008 Ahnood A, Ghaffarzadeh K, Nathan A, Servati P, Li F, Esmaeili-Rad MR, Sazonov A. Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors Applied Physics Letters. 93. DOI: 10.1063/1.2999590  0.642
2008 Li FM, Dhagat P, Haverinen HM, McCulloch I, Heeney M, Jabbour GE, Nathan A. Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric Applied Physics Letters. 93. DOI: 10.1063/1.2927485  0.419
2008 Esmaeili-Rad MR, Sazonov A, Nathan A. Analysis of the off current in nanocrystalline silicon bottom-gate thin-film transistors Journal of Applied Physics. 103: 74502. DOI: 10.1063/1.2902499  0.492
2008 Lee HJ, Sazonov A, Nathan A. Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors Applied Physics Letters. 92: 83509. DOI: 10.1063/1.2887882  0.511
2008 Wang K, Vygranenko Y, Nathan A. Fabrication and characterization of NiO/ZnO/ITO p-i-n heterostructure Thin Solid Films. 516: 1640-1643. DOI: 10.1016/J.Tsf.2007.03.075  0.412
2008 Hsieh GW, Beecher P, Li FM, Servati P, Colli A, Fasoli A, Chu D, Nathan A, Ong B, Robertson J, Ferrari AC, Milne WI. Formation of composite organic thin film transistors with nanotubes and nanowires Physica E: Low-Dimensional Systems and Nanostructures. 40: 2406-2413. DOI: 10.1016/J.Physe.2007.10.044  0.625
2008 Kim KH, Nathan A, Jang J. Polycrystalline silicon with large disk-shaped grains by Ni-mediated crystallization of doped amorphous silicon Journal of Non-Crystalline Solids. 354: 2341-2344. DOI: 10.1016/J.Jnoncrysol.2007.10.089  0.356
2008 Kim KH, Vygranenko Y, Striakhilev D, Bedzyk M, Chang JH, Nathan A, Chuang TC, Heiler G, Tredwell T. Performance of a-Si:H n-i-p photodiodes on plastic substrate Journal of Non-Crystalline Solids. 354: 2590-2593. DOI: 10.1016/J.Jnoncrysol.2007.09.042  0.485
2008 Chaji GR, Safavian N, Nathan A. Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices Analog Integrated Circuits and Signal Processing. 56: 143-151. DOI: 10.1007/S10470-007-9082-4  0.502
2008 Vygranenko Y, Wang K, Vieira M, Nathan A. Indium oxide thin‐film transistor by reactive ion beam assisted deposition Physica Status Solidi (a). 205: 1925-1928. DOI: 10.1002/Pssa.200778883  0.376
2007 Wang K, Vygranenko Y, Nathan A. Room Temperature Growth of Indium Oxide Films by Reactive Ion Beam Assisted Deposition Mrs Proceedings. 1012. DOI: 10.1557/Proc-1012-Y03-02  0.368
2007 Lee HJ, Sazonov A, Nathan A. Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A21-07  0.488
2007 Kim KH, Vygranenko Y, Bedzyk M, Chang JH, Chuang TC, Striakhilev D, Nathan A, Heiler G, Tredwell T. High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A19-05  0.476
2007 Chang JH, Chuang TC, Vygranenko Y, Striakhilev D, Kim KH, Nathan A, Heiler G, Tredwell T. Temperature dependence of leakage current in segmented a-Si:H n-i-p photodiodes Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A19-04  0.437
2007 Lai J, Vygranenko Y, Heiler G, Safavian N, Striakhilev D, Nathan A, Tredwell T. Noise Performance of High Fill Factor Pixel Architectures for Robust Large-Area Image Sensors using Amorphous Silicon Technology Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A14-05  0.437
2007 Safavian N, Vygranenko Y, Chang J, Kim KH, Lai J, Striakhilev D, Nathan A, Heiler G, Tredwell T, Fernandes M. Modeling and characterization of the hydrogenated amorphous silicon metal insulator semiconductor photosensors for digital radiography Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A12-06  0.494
2007 Vygranenko Y, Kerr R, Kim KH, Chang JH, Striakhilev D, Nathan A, Heiler G, Tredwell T. Segmented Amorphous Silicon n-i-p Photodiodes on Stainless-Steel Foils for Flexible Imaging Arrays Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A12-02  0.473
2007 Moradi M, Striakhilev D, Chan I, Nathan A, Cho NI, Nam HG. Reliability of Silicon Nitride Gate Dielectric in Vertical Thin-Film Transistors Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A08-05  0.431
2007 Chaji GR, Nathan A. Parallel Addressing Scheme for Voltage-Programmed Active-Matrix OLED Displays Ieee Transactions On Electron Devices. 54: 1095-1100. DOI: 10.1109/Ted.2007.894608  0.392
2007 Lee C, Striakhilev D, Nathan A. Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric Ieee Transactions On Electron Devices. 54: 45-51. DOI: 10.1109/Ted.2006.887220  0.514
2007 Chaji GR, Ng C, Nathan A, Werner A, Birnstock J, Schneider O, Blochwitz-Nimoth J. Electrical Compensation of OLED Luminance Degradation Ieee Electron Device Letters. 28: 1108-1110. DOI: 10.1109/Led.2007.909854  0.38
2007 Sambandan S, Nathan A. Single-Technology-Based Statistical Calibration for High-Performance Active-Matrix Organic LED Displays Ieee\/Osa Journal of Display Technology. 3: 284-294. DOI: 10.1109/Jdt.2007.900914  0.53
2007 Ashtiani SJ, Chaji GR, Nathan A. AMOLED Pixel Circuit With Electronic Compensation of Luminance Degradation Ieee\/Osa Journal of Display Technology. 3: 36-39. DOI: 10.1109/Jdt.2006.890711  0.534
2007 Vygranenko Y, Wang K, Nathan A. Stable indium oxide thin-film transistors with fast threshold voltage recovery Applied Physics Letters. 91: 263508. DOI: 10.1063/1.2825422  0.471
2007 Esmaeili-Rad MR, Li F, Sazonov A, Nathan A. Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric Journal of Applied Physics. 102: 64512. DOI: 10.1063/1.2784008  0.524
2007 Esmaeili-Rad MR, Sazonov A, Nathan A. Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements Applied Physics Letters. 91: 113511. DOI: 10.1063/1.2783971  0.482
2007 Beecher P, Servati P, Rozhin A, Colli A, Scardaci V, Pisana S, Hasan T, Flewitt AJ, Robertson J, Hsieh GW, Li FM, Nathan A, Ferrari AC, Milne WI. Ink-jet printing of carbon nanotube thin film transistors Journal of Applied Physics. 102. DOI: 10.1063/1.2770835  0.623
2007 Wang K, Vygranenko Y, Nathan A. ZnO-based p-i-n and n-i-p heterostructure ultraviolet sensors : a comparative study Journal of Applied Physics. 101: 114508. DOI: 10.1063/1.2739219  0.378
2007 Li FM, Nathan A, Wu Y, Ong BS. Organic thin-film transistor integration using silicon nitride gate dielectric Applied Physics Letters. 90: 133514. DOI: 10.1063/1.2718505  0.526
2007 Wang K, Vygranenko Y, Nathan A. Optically transparent ZnO-based n–i–p ultraviolet photodetectors Thin Solid Films. 515: 6981-6985. DOI: 10.1016/J.Tsf.2007.02.009  0.388
2007 Esmaeili-Rad MR, Sazonov A, Kazanskii AG, Khomich AA, Nathan A. Optical properties of nanocrystalline silicon deposited by PECVD Journal of Materials Science: Materials in Electronics. 18: 405-409. DOI: 10.1007/S10854-007-9230-8  0.42
2006 Rad MRE, Lee C, Sazonov A, Nathan A. Nanocrystalline silicon films deposited by RF PECVD for bottom-gate thin-film transistors Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A22-13  0.495
2006 Lee C, Sazonov A, Rad MRE, Chaji GR, Nathan A. Ambipolar thin-film transistors fabricated by PECVD nanocrystalline silicon Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A22-05  0.515
2006 Nathan A, Striakhilev D, Chaji R, Ashtiani S, Lee C, Sazonov A, Robertson J, Milne W. Backplane Requirements for Active Matrix Organic Light Emitting Diode Displays Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A16-01-L09-01  0.498
2006 Izadi MH, Karim KS, Nathan A, Rowlands JA. Low-noise pixel architecture for advanced diagnostic medical x-ray imaging applications Progress in Biomedical Optics and Imaging - Proceedings of Spie. 6142. DOI: 10.1117/12.654900  0.573
2006 Chan I, Fathololoumi S, Nathan A. Nanoscale channel and small area amorphous silicon vertical thin film transistor Journal of Vacuum Science and Technology. 24: 869-874. DOI: 10.1116/1.2194933  0.515
2006 Fathololoumi S, Chan I, Moradi M, Nathan A. Numerical study on the scaling of a-Si:H thin film transistors Journal of Vacuum Science and Technology. 24: 888-891. DOI: 10.1116/1.2194930  0.474
2006 Lee C, Sazonov A, Nathan A. High-performance n-channel 13.56MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors Journal of Vacuum Science and Technology. 24: 618-623. DOI: 10.1116/1.2194027  0.489
2006 Lai J, Nathan A, Rowlands J. High dynamic range active pixel sensor arrays for digital x-ray imaging using a-Si:H Journal of Vacuum Science and Technology. 24: 850-853. DOI: 10.1116/1.2192526  0.425
2006 Chaji GR, Safavian N, Nathan A. Stable a-Si:H circuits based on short-term stress stability of amorphous silicon thin film transistors Journal of Vacuum Science and Technology. 24: 875-878. DOI: 10.1116/1.2186654  0.529
2006 Ng C, Nathan A. Temperature characterization of a-Si:H thin-film transistor for analog circuit design using analog hardware description language modeling Journal of Vacuum Science and Technology. 24: 883-887. DOI: 10.1116/1.2167084  0.478
2006 Li FM, Vygranenko Y, Koul S, Nathan A. Photolithographically defined polythiophene organic thin-film transistors Journal of Vacuum Science and Technology. 24: 657-662. DOI: 10.1116/1.2165653  0.468
2006 Ottaviani T, Karim KS, Nathan A, Rowlands JA. Low noise signal-to-noise ratio enhancing readout circuit for current-mediated active pixel sensors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 770-773. DOI: 10.1116/1.2162562  0.63
2006 Sambandan S, Nathan A. Equivalent Circuit Description of Threshold Voltage Shift in a-Si:H TFTs From a Probabilistic Analysis of Carrier Population Dynamics Ieee Transactions On Electron Devices. 53: 2306-2311. DOI: 10.1109/Ted.2006.881012  0.519
2006 Sambandan S, Nathan A. Stable Organic LED Displays Using RMS Estimation of Threshold Voltage Dispersion Ieee Transactions On Circuits and Systems Ii-Express Briefs. 53: 941-945. DOI: 10.1109/Tcsii.2006.880028  0.506
2006 Ashtiani SJ, Nathan A. A Driving Scheme for Active-Matrix Organic Light-Emitting Diode Displays Based on Current Feedback Ieee\/Osa Journal of Display Technology. 5: 257-264. DOI: 10.1109/Jdt.2009.2016117  0.512
2006 Striakhilev D, Nathan A, Vygranenko Y, Servati P, Lee C, Sazonov A. Amorphous Silicon Display Backplanes on Plastic Substrates Ieee\/Osa Journal of Display Technology. 2: 364-371. DOI: 10.1109/Jdt.2006.885153  0.735
2006 Chaji GR, Nathan A. A Stable Voltage-Programmed Pixel Circuit for a-Si:H AMOLED Displays Ieee\/Osa Journal of Display Technology. 2: 347-358. DOI: 10.1109/Jdt.2006.885142  0.493
2006 Sakariya K, Nathan A. Leakage and charge injection optimization in a-Si AMOLED displays Ieee\/Osa Journal of Display Technology. 2: 254-257. DOI: 10.1109/Jdt.2006.878768  0.44
2006 Sambandan S, Striakhilev D, Nathan A. Device and circuit level optimization for high performance a-Si:H TFT-based AMOLED displays Ieee\/Osa Journal of Display Technology. 2: 52-59. DOI: 10.1109/Jdt.2005.863600  0.529
2006 Lee CH, Sazonov A, Robertson J, Nathan A, Esmaeili-Rad MR, Servati P, Milne WI. How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD? Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346766  0.639
2006 Servati P, Nathan A, Amaratunga GAJ. Generalized transport-band field-effect mobility in disordered organic and inorganic semiconductors Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.245210  0.619
2006 Lee C, Sazonov A, Nathan A, Robertson J. Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities Applied Physics Letters. 89: 252101. DOI: 10.1063/1.2408630  0.406
2006 Vygranenko Y, Wang K, Nathan A. Low leakage p-NiO/i-ZnO/n-ITO heterostructure ultraviolet sensor Applied Physics Letters. 89: 172105. DOI: 10.1063/1.2364269  0.373
2006 Safavian N, Chaji GR, Nathan A, Rowlands JA. Three-TFT image sensor for real-time digital X-ray imaging Electronics Letters. 42: 150-151. DOI: 10.1049/El:20063604  0.502
2006 Lee C, Sazonov A, Nathan A. High hole and electron mobilities in nanocrystalline silicon thin-film transistors Journal of Non-Crystalline Solids. 352: 1732-1736. DOI: 10.1016/J.Jnoncrysol.2005.11.149  0.504
2006 Vygranenko Y, Louro P, Vieira M, Chang JH, Nathan A. Low leakage current a-Si:H/a-SiC:H n–i–p photodiode with Cr/a-SiNx front contact Journal of Non-Crystalline Solids. 352: 1837-1840. DOI: 10.1016/J.Jnoncrysol.2005.08.042  0.466
2006 Nathan A, Karim KS. Photon Detectors Mems. 281-343. DOI: 10.1016/B978-081551497-8.50008-1  0.651
2006 Striakhilev D, Nathan A, Servati P, Sazonov A. Amorphous silicon integration on plastic for flexible displays Proceedings - Electrochemical Society. 5-18.  0.707
2005 Nathan A, Alexander S, Servati P, Sakariya K, Striakhilev D, Huang R, Kumar A, Church C, Wzorek J, Arsenault P. P-26: Amorphous Silicon Enables Large Amoled Displays for HDTV Sid Symposium Digest of Technical Papers. 36: 320. DOI: 10.1889/1.2720321  0.583
2005 Jafarabadiashtiani S, Chaji G, Sambandan S, Striakhilev D, Nathan A, Servati P. A new driving method for a-Si AMOLED displays based on voltage feedback Digest of Technical Papers - Sid International Symposium. 36: 316-319. DOI: 10.1889/1.2036434  0.644
2005 Alexander S, Servati P, Chaji CR, Ashtiani S, Huang R, Striakhilev D, Sakariya K, Kumar A, Nathan A, Church C, Wzorek J, Arsenault P. Pixel circuits and drive schemes for glass and elastic AMOLED displays Journal of the Society For Information Display. 13: 587-595. DOI: 10.1889/1.2012647  0.671
2005 Koul S, Vygranenko Y, Li F, Sazonov A, Nathan A. Fabrication of RR-P3HT-based TFTs using low-temperature PECVD silicon nitride passivation Mrs Proceedings. 871. DOI: 10.1557/Proc-871-I9.4  0.407
2005 Li F, Koul S, Vygranenko Y, Servati P, Nathan A. Dual-Gate SiO 2 /P3HT/SiN x OTFT Mrs Proceedings. 871. DOI: 10.1557/Proc-871-I9.3  0.717
2005 Vygranenko Y, Chang JH, Nathan A. Two-dimensional a-Si:H/a-SiC:H n-i-p sensor array with ITO/a-SiNx antireflection coating Mrs Proceedings. 862. DOI: 10.1557/PROC-862-A9.4  0.378
2005 Lee C, Sazonov A, Nathan A. Effects of Post Annealing and Material Stability on Undoped and n+ nc-Si:H Films Deposited at 75 °C Using 13.56 MHz PECVD Mrs Proceedings. 862. DOI: 10.1557/PROC-862-A5.4  0.339
2005 Lai J, Safavian N, Nathan A, Rowlands JA. Active Pixel TFT Arrays for Digital Fluoroscopy in a-Si:H Technology Mrs Proceedings. 862. DOI: 10.1557/PROC-862-A22.4  0.376
2005 Lee C, Sazonov A, Nathan A. High Electron Mobility (˜150 cm2/Vs) PECVD Nanocrystalline Silicon Top-Gate TFTs at 260 °C Mrs Proceedings. 862. DOI: 10.1557/PROC-862-A17.5  0.4
2005 Sakariya K, Ng CKM, Servati P, Nathan A. Accelerated stress testing of a-Si:H pixel circuits for AMOLED displays Ieee Transactions On Electron Devices. 52: 2577-2583. DOI: 10.1109/Ted.2005.859635  0.657
2005 Kumar A, Nathan A, Jabbour GE. Does TFT mobility impact pixel size in AMOLED backplanes? Ieee Transactions On Electron Devices. 52: 2386-2394. DOI: 10.1109/Ted.2005.857937  0.504
2005 Lai J, Nathan A. Reset and partition noise in active pixel image sensors Ieee Transactions On Electron Devices. 52: 2329-2332. DOI: 10.1109/Ted.2005.856192  0.334
2005 Ashtiani SJ, Servati P, Striakhilev D, Nathan A. A 3-TFT current-programmed pixel circuit for AMOLEDs Ieee Transactions On Electron Devices. 52: 1514-1518. DOI: 10.1109/Ted.2005.850615  0.673
2005 Jafarabadiashtiani S, Servati P, Nathan A. A high-speed driver for current-programmed active-matrix OLED displays 3rd International Ieee Northeast Workshop On Circuits and Systems Conference, Newcas 2005. 2005: 247-250. DOI: 10.1109/NEWCAS.2005.1496757  0.63
2005 Striakhilev D, Nathan A, Servati P, Sazonov A. Amorphous silicon display backplanes on plastic substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 774-775. DOI: 10.1109/LEOS.2005.1548237  0.684
2005 Chaji GR, Striakhilev D, Nathan A. A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs Ieee Electron Device Letters. 26: 737-739. DOI: 10.1109/Led.2005.855421  0.524
2005 Lee C, Striakhilev D, Tao S, Nathan A. Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon Ieee Electron Device Letters. 26: 637-639. DOI: 10.1109/Led.2005.853670  0.468
2005 Sambandan S, Zhu L, Striakhilev D, Servati P, Nathan A. Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias Ieee Electron Device Letters. 26: 375-377. DOI: 10.1109/Led.2005.848116  0.698
2005 Servati P, Nathan A. Functional pixel circuits for elastic AMOLED displays Proceedings of the Ieee. 93: 1257-1264. DOI: 10.1109/JPROC.2005.851534  0.665
2005 Chaji GR, Nathan A. A fast settling current driver based on the CCII for AMOLED displays Ieee\/Osa Journal of Display Technology. 1: 283-288. DOI: 10.1109/Jdt.2005.858934  0.451
2005 Nathan A, Chaji GR, Ashtiani SJ. Driving schemes for a-Si and LTPS AMOLED displays Ieee\/Osa Journal of Display Technology. 1: 267-277. DOI: 10.1109/Jdt.2005.858913  0.436
2005 Lee CH, Grant DJ, Sazonov A, Nathan A. Postdeposition thermal annealing and material stability of 75°C hydrogenated nanocrystalline silicon plasma-enhanced chemical vapor deposition films Journal of Applied Physics. 98. DOI: 10.1063/1.1993777  0.442
2005 Jahinuzzaman SM, Sultana A, Sakariya K, Servati P, Nathan A. Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress Applied Physics Letters. 87. DOI: 10.1063/1.1993766  0.669
2005 Chan I, Nathan A. Amorphous silicon thin-film transistors with 90° vertical nanoscale channel Applied Physics Letters. 86: 253501. DOI: 10.1063/1.1949721  0.446
2005 Lee C, Sazonov A, Nathan A. High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition Applied Physics Letters. 86: 222106. DOI: 10.1063/1.1942641  0.488
2005 Servati P, Nathan A. Orientation-dependent strain tolerance of amorphous silicon transistors and pixel circuits for elastic organic light-emitting diode displays Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852729  0.672
2005 Safavian N, Lai J, Rowlands J, Nathan A. Threshold voltage shift compensated active pixel sensor array for digital X-ray imaging in a-Si technology Electronics Letters. 41: 411-412. DOI: 10.1049/El:20058232  0.501
2005 Chaji GR, Servati P, Nathan A. Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel Electronics Letters. 41: 499-500. DOI: 10.1049/El:20058209  0.729
2005 Sambandan S, Kumar A, Sakariya K, Nathan A. Analogue circuit building blocks with amorphous silicon thin film transistors Electronics Letters. 41: 314-315. DOI: 10.1049/El:20057573  0.533
2005 Li F, Koul S, Vygranenko Y, Servati P, Nathan A. Dual-gate SiO2/P3HT/SiNx OTFT Materials Research Society Symposium Proceedings. 871: 305-310.  0.691
2004 Nathan A, Alexander S, Sakariya K, Servati P, Tao S, Striakhilev D, Kumar A, Sambandan S, Jafarabadiashtiani S, Vigranenko Y, Church C, Wzorek J, Arsenault P. 57.2: Extreme AMOLED Backplanes in a-Si with Proven Stability Sid Symposium Digest of Technical Papers. 35: 1508. DOI: 10.1889/1.1825780  0.588
2004 Servati P, Tao S, Horne E, Striakhilev D, Sakariya K, Nathan A. Mechanically strained a-Si:H AMOLED driver circuits Mrs Proceedings. 814. DOI: 10.1557/Proc-814-I6.13  0.729
2004 Nathan A, Striakhilev D, Servati P, Sakariya K, Sazonov A, Alexander S, Tao S, Lee C-, Kumar A, Sambandan S, Jafarabadiashtiani S, Vygranenko Y, Chan IW. A-Si Amoled Display Backplanes on Flexible Substrates Mrs Proceedings. 814. DOI: 10.1557/Proc-814-I3.1  0.793
2004 Chan I, Nathan A. 100-nm Channel Length a-Si:H Vertical Thin Film Transistors Mrs Proceedings. 814. DOI: 10.1557/Proc-814-I2.4/A3.4  0.426
2004 Grant DJ, Lee C, Nathan A, Das UK, Madan A. Bottom-Gate TFTs with Channel Layer Grown by Pulsed PECVD Technique Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A4.8  0.434
2004 Lee C, Striakhilev D, Nathan A. Intrinsic and Doped m c-Si:H TFT Layers using 13.56 MHz PECVD at 250°C Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A4.14  0.369
2004 Sakariya K, Ng CKM, Huang I, Sultana A, Tao S, Nathan A. Accelerated Stress Testing of a-Si:H TFTs for Amoled Displays Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A4.11  0.589
2004 Jahinuzzaman SM, Servati P, Nathan A. Bias induced long term transient in a-Si:H thin film transistors Proceedings of Spie - the International Society For Optical Engineering. 5578: 315-322. DOI: 10.1117/12.567419  0.641
2004 Karim KS, Yin S, Nathan A, Rowlands JA. High dynamic range pixel architectures for diagnostic medical imaging Proceedings of Spie - the International Society For Optical Engineering. 5368: 657-667. DOI: 10.1117/12.537404  0.579
2004 Sambandan S, Sakariya K, Servati P, Kumar A, Nathan A. Voltage programmed pixel driver circuits for AMOLED applications - Design optimisation of pixel select and drive stages Proceedings of Spie - the International Society For Optical Engineering. 5363: 16-26. DOI: 10.1117/12.531926  0.69
2004 Lee C, Vygranenko Y, Nathan A. Process issues with Mo/a-Si:H Schottky diode and thin film transistors integration for direct x-ray detection Journal of Vacuum Science and Technology. 22: 2091-2095. DOI: 10.1116/1.1771661  0.436
2004 Kumar A, Sambandan S, Sakariya K, Servati P, Nathan A. Amorphous silicon shift registers for display drivers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 981-986. DOI: 10.1116/1.1722376  0.686
2004 Karim KS, Nathan A. Noise performance of a current-mediated amplified pixel for large-area medical imaging Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 1010-1014. DOI: 10.1116/1.1722219  0.582
2004 Chan I, Nathan A. Thick film resist lithography for a-Si:H devices with high topography and long dry etch processes Journal of Vacuum Science and Technology. 22: 1048-1053. DOI: 10.1116/1.1705584  0.437
2004 Sakariya K, Sambandan S, Servati P, Nathan A. Analysis and characterization of self-compensating current programmed a-Si:H active matrix organic light-emitting diode pixel circuits Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 1001-1004. DOI: 10.1116/1.1705583  0.706
2004 Chang JH, Vygranenko Y, Nathan A. Two-dimensional a-Si:H based n-i-p sensor array Journal of Vacuum Science and Technology. 22: 971-974. DOI: 10.1116/1.1691082  0.486
2004 Li F, Nathan A, O N. Deep-ultraviolet-induced damage of charge coupled device sensors Journal of Vacuum Science and Technology. 22: 996-1000. DOI: 10.1116/1.1689299  0.346
2004 Lee C, Striakhilev D, Nathan A. Highly conductive n+ hydrogenated microcrystalline silicon and its application in thin film transistors Journal of Vacuum Science and Technology. 22: 991-995. DOI: 10.1116/1.1648674  0.469
2004 Sakariya K, Servati P, Nathan A. Stability analysis of current programmed a-Si:H AMOLED pixel circuits Ieee Transactions On Electron Devices. 51: 2019-2025. DOI: 10.1109/Ted.2004.838452  0.695
2004 Karim KS, Nathan A, Hack M, Milne WI. Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs Ieee Electron Device Letters. 25: 188-190. DOI: 10.1109/Led.2004.825154  0.691
2004 Nathan A, Kumar A, Sakariya K, Servati P, Karim KS, Striakhilev D, Sazono A. Amorphous silicon back-plane electronics for OLED displays Ieee Journal On Selected Topics in Quantum Electronics. 10: 58-69. DOI: 10.1109/Jstqe.2004.824105  0.79
2004 Nathan A, Kumar A, Sakariya K, Servati P, Sambandan S, Striakhilev D. Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic Ieee Journal of Solid-State Circuits. 39: 1477-1486. DOI: 10.1109/Jssc.2004.829373  0.742
2004 Servati P, Vygranenko Y, Nathan A, Morrison S, Madan A. Low dark current and blue enhanced a-Si:H/a-SiC:H heterojunction n-i-δ ip photodiode for imaging applications Journal of Applied Physics. 96: 7578-7582. DOI: 10.1063/1.1811385  0.673
2004 Ashtiani SJ, Servati P, Nathan A. Active-matrix organic light-emitting diode display driver based on second-generation current conveyor Electronics Letters. 40: 1178-1179. DOI: 10.1049/El:20045914  0.664
2004 Karim KS, Servati P, Nathan A. High voltage amorphous silicon TFT for use in large area applications Microelectronics Journal. 35: 311-315. DOI: 10.1016/S0026-2692(03)00196-4  0.77
2004 Nathan A, Striakhilev D, Servati P, Sakariya K, Sazonov A, Alexander S, Tao S, Lee CH, Kumar A, Sambandan S, Jafarabadiashtiani S, Vygranenko Y, Chan IW. A-Si amoled display backplanes on flexible substrates Materials Research Society Symposium Proceedings. 814: 61-72.  0.707
2004 Servati P, Tao S, Horne E, Striakhilev D, Sakariya K, Nathan A. Mechanically strained a-Si:H AMOLED driver circuits Materials Research Society Symposium Proceedings. 814: 119-124.  0.614
2003 Tao S, Vygranenko Y, Nathan A. Enhanced Blue Sensitivity in ITO/a-SiNx:H/a-Si:H MIS Photodetectors Mrs Proceedings. 762. DOI: 10.1557/proc-762-a21.6  0.362
2003 Lee C, Chan I, Nathan A. Mechanical Stress and Process Integration of Direct X-ray Detector and TFT in a-Si:H Technology Mrs Proceedings. 762. DOI: 10.1557/PROC-762-A18.12  0.317
2003 Servati P, Striakhilev D, Nathan A. Above-Threshold Parameter Extraction Including Contact Resistance Effects for a-Si:H TFTs on Glass and Plastic Mrs Proceedings. 762. DOI: 10.1557/PROC-762-A18.10  0.62
2003 Karim KS, Vygranenko Y, Avila-Muñoz A, Striakhilev DA, Nathan A, Germann S, Rowlands JA, Belev G, Koughia C, Johanson R, Kasap SO. Active pixel image sensor for large area medical imaging Proceedings of Spie - the International Society For Optical Engineering. 5030: 38-47. DOI: 10.1117/12.480254  0.596
2003 Servati P, Striakhilev D, Nathan A. Above-Threshold Parameter Extraction and Modeling for Amorphous Silicon Thin-Film Transistors Ieee Transactions On Electron Devices. 50: 2227-2235. DOI: 10.1109/Ted.2003.818156  0.686
2003 Servati P, Karim KS, Nathan A. Static characteristics of a-Si:H dual-gate TFTs Ieee Transactions On Electron Devices. 50: 926-932. DOI: 10.1109/Ted.2003.812481  0.797
2003 Franks WAR, Kiik MJ, Nathan A. UV-responsive CCD image sensors with enhanced inorganic phosphor coatings Ieee Transactions On Electron Devices. 50: 352-358. DOI: 10.1109/Ted.2003.809029  0.325
2003 Karim KS, Nathan A, Rowlands JA. Amorphous silicon active pixel sensor readout circuit for digital imaging Ieee Transactions On Electron Devices. 50: 200-208. DOI: 10.1109/Ted.2002.806968  0.652
2003 Kumar A, Sakariya K, Servati P, Alexander S, Striakhilev D, Karim KS, Nathan A, Hack M, Williams E, Jabbour GE. Design considerations for active matrix organic light emitting diode arrays Iee Proceedings: Circuits, Devices and Systems. 150: 322-328. DOI: 10.1049/ip-cds:20030730  0.743
2003 Karim KS, Nathan A, Rowlands JA, Kasap SO. X-ray detector with on-pixel amplification for large area diagnostic medical imaging Iee Proceedings: Circuits, Devices and Systems. 150: 267-273. DOI: 10.1049/ip-cds:20030602  0.601
2003 Nathan A, Servati P, Karim KS, Striakhilev D, Sazonov A. Thin film transistor integration on glass and plastic substrates in amorphous silicon technology Iee Proceedings: Circuits, Devices and Systems. 150: 329-338. DOI: 10.1049/ip-cds:20030554  0.761
2003 Tao S, Karim KS, Servati P, Lee C, Nathan A. Large Area Digital X-ray Imaging Sensors Update. 12: 3-49. DOI: 10.1002/Seup.200390002  0.802
2003 Nathan A, Sakariya K, Kumar A, Servati P, Karim KS, Striakhilev D, Sazonov A. Amorphous silicon TFT circuit integration for OLED displays on glass and plastic Proceedings of the Custom Integrated Circuits Conference. 215-222.  0.784
2003 Nathan A, Striakhilev D, Servati P, Sakariya K, Kumar A, Karim KS, Sazonov A. Low Temperature a-Si:H Pixel Circuits for Mechanically Flexible AMOLED Displays Materials Research Society Symposium - Proceedings. 769: 29-34.  0.766
2003 Karim KS, Sakariya K, Nathan A. Threshold Voltage Performance of a-Si:H TFTs for Analog Applications Materials Research Society Symposium - Proceedings. 762: 247-252.  0.681
2002 Sakariya K, Servati P, Striakhilev D, Nathan A. Vt-Shift Compensating Amorphous Silicon Pixel Circuits for Flexible OLED Displays Mrs Proceedings. 736. DOI: 10.1557/Proc-736-D7.15  0.723
2002 Gu Z, Jeyakumar R, Sivoththaman S, Nathan A. Synthesis and Characterization of Methyltriethoxysilane Based Low Permittivity (Low-k) Polymeric Dielectrics Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B7.23  0.355
2002 Morrison S, Servati P, Vygranenko Y, Nathan A, Madan A. Reduction of dark current under reverse bias in a-Si:H p-i-n photodetectors Mrs Proceedings. 715. DOI: 10.1557/Proc-715-A7.4  0.681
2002 Karim K, Nathan A, Rowlands J. Amorphous silicon active pixel sensor readout circuit architectures for medical imaging Mrs Proceedings. 715. DOI: 10.1557/Proc-715-A4.2  0.607
2002 Chan I, Nathan A. Amorphous silicon vertical thin film transistor for high density integration Mrs Proceedings. 715. DOI: 10.1557/Proc-715-A12.6  0.429
2002 Servati P, Prakash S, Nathan A, Py C. Amorphous silicon driver circuits for organic light-emitting diode displays Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1374-1378. DOI: 10.1116/1.1486006  0.716
2002 Mohan N, Karim KS, Nathan A. Design of multiplexer in amorphous silicon technology Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 1043-1047. DOI: 10.1116/1.1474413  0.673
2002 Servati P, Nathan A. Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 1038-1042. DOI: 10.1116/1.1472427  0.643
2002 Stryahilev D, Sazonov A, Nathan A. Amorphous silicon nitride deposited at 120 °C for organic light emitting display-thin film transistor arrays on plastic substrates Journal of Vacuum Science and Technology. 20: 1087-1090. DOI: 10.1116/1.1472423  0.502
2002 Sivoththaman S, Jeyakumar R, Ren L, Nathan A. Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration Journal of Vacuum Science and Technology. 20: 1149-1153. DOI: 10.1116/1.1463083  0.42
2002 Tao S, Gu ZH, Nathan A. Fabrication of Gd2O2S:Tb based phosphor films coupled with photodetectors for x-ray imaging applications Journal of Vacuum Science and Technology. 20: 1091-1094. DOI: 10.1116/1.1463082  0.371
2002 Chan I, Nathan A. Dry etch process optimization for small-areaa-Si:H vertical thin film transistor Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 20: 962-965. DOI: 10.1116/1.1463073  0.326
2002 Karim KS, Nathan A, Rowlands JA. Active pixel sensor architectures in a-SiH for medical imaging Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 1095-1099. DOI: 10.1116/1.1460897  0.635
2002 Jeyakumar R, Karim KS, Sivoththaman S, Nathan A. Integration issues for polymeric dielectrics in large area electronics [TFTs] 2002 23rd International Conference On Microelectronics, Miel 2002 - Proceedings. 2: 543-546. DOI: 10.1109/MIEL.2002.1003316  0.615
2002 Nathan A, Servati P, Karim KS. TFT circuit integration in a-Si:H technology 2002 23rd International Conference On Microelectronics, Miel 2002 - Proceedings. 1: 115-124. DOI: 10.1109/MIEL.2002.1003157  0.772
2002 Servati P, Nathan A. Modeling of the reverse characteristics of a-Si:H TFTs Ieee Transactions On Electron Devices. 49: 812-819. DOI: 10.1109/16.998589  0.702
2002 Nathan A, Park B, Ma Q, Sazonov A, Rowlands JA. Amorphous silicon technology for large area digital X-ray and optical imaging. Microelectronics Reliability. 42: 735-746. DOI: 10.1016/S0026-2714(02)00024-0  0.434
2002 Sazonov A, Stryahilev D, Nathan A, Bogomolova LD. Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs Journal of Non-Crystalline Solids. 299302: 1360-1364. DOI: 10.1016/S0022-3093(01)01157-7  0.498
2002 Karim KS, Nathan A, Rowlands JA. Active pixel sensor architectures for large area medical imaging Journal of Non-Crystalline Solids. 299: 1250-1255. DOI: 10.1016/S0022-3093(01)01146-2  0.623
2002 Bogomolova LD, Jachkin VA, Prushinsky SA, Stryahilev D, Sazonov A, Nathan A. EPR spectra of amorphous silicon nitride films grown by low-temperature PECVD Journal of Non-Crystalline Solids. 297: 247-253. DOI: 10.1016/S0022-3093(01)00934-6  0.35
2002 Nathan A, Sakariya K, Kumar A, Servati P, Striakhilev D. Amorphous silicon back-plane electronics for OLED displays Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 303-304.  0.707
2002 Karim KS, Nathan A, Rowlands JA. Amorphous silicon active pixel sensor readout circuit architectures for medical imaging Materials Research Society Symposium - Proceedings. 715: 661-666.  0.614
2002 Sakariya K, Servati P, Striakhilev D, Nathan A. Vt-shift compensating amorphous silicon pixel circuits for flexible OLED displays Materials Research Society Symposium - Proceedings. 736: 207-212.  0.695
2002 Nathan A, Sakariya K, Karim KS, Servati P, Kumar A, Striakhilev D. a-Si:H back-plane electronics for medical imaging and OLED displays Ieee International Conference On Semiconductor Electronics, Proceedings, Icse. 15-21.  0.777
2002 Morrison S, Servati P, Vygranenko Y, Nathan A, Madan A. Reduction of dark current under reverse bias in a-Si:H p-i-n photodetectors Materials Research Society Symposium - Proceedings. 715: 701-706.  0.648
2001 Stryahilev D, Sazonov A, Nathan A. PECVD Amorphous Silicon Nitride at 120°C for a-Si:H TFTs. Mrs Proceedings. 685. DOI: 10.1557/Proc-685-D5.15.1  0.426
2001 Karim KS, Nathan A, Rowlands JA. Alternate pixel architectures for large area medical imaging Proceedings of Spie - the International Society For Optical Engineering. 4320: 35-46. DOI: 10.1117/12.430903  0.588
2001 Karim KS, Nathan A. Readout circuit in active pixel sensors in amorphous silicon technology Ieee Electron Device Letters. 22: 469-471. DOI: 10.1109/55.954914  0.63
2001 Nagata M, Stevens M, Swart N, Dravia T, Nathan A. Optimization of two-element flow microsensors using quasi 3-D numerical electrothermal analysis Sensors and Actuators a-Physical. 90: 102-110. DOI: 10.1016/S0924-4247(01)00456-3  0.318
2001 Karim KS, Servati P, Mohan N, Nathan A, Rowlands JA. VHDL-AMS modeling and simulation of a passive pixel sensor in a-Si:H technology for medical imaging Proceedings - Ieee International Symposium On Circuits and Systems. 5: 479-482.  0.716
2000 Nathan A, Park B, Sazonov A, Murthy RVR. Roughness of TFT Gate Metallization and its Impact on Leakage, Threshold Voltage Shift and Mobility Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A28.6  0.457
2000 Servati P, Nathan A, Sazonov A. A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A28.3  0.664
2000 Tao S, Ma Q, Striakhilev D, Nathan A. ITO/a-SiN x :H/a-Si:H Photodiode with Enhanced Photosensitivity and Reduced Leakage Current Using Polycrystalline ITO Deposited at Room Temperature Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A12.2  0.65
2000 Park B, Karim KS, Nathan A. Intrinsic thin film stresses in multilayered imaging pixels Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 688-692. DOI: 10.1116/1.582249  0.548
2000 Murthy RVR, Servati P, Nathan A, Chamberlain SG. Optimization of n+ μc-Si:H contact layer for low leakage current in a-Si:H thin film transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 685-687. DOI: 10.1116/1.582248  0.715
2000 Gu ZH, Tao S, Chan I, Nathan A. X-ray phosphor deposition technology for co-integration with amorphous silicon imaging arrays Journal of Vacuum Science and Technology. 18: 639-642. DOI: 10.1116/1.582240  0.378
2000 Sazonov A, Nathan A. 120 °C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates Journal of Vacuum Science and Technology. 18: 780-782. DOI: 10.1116/1.582179  0.481
2000 Servati P, Nathan A, Sazonov A. Effect of front hole channel on leakage characteristics of a-Si:H TFTs Proceedings of the International Conference On Microelectronics, Icm. 2000: 247-250. DOI: 10.1109/ICM.2000.916454  0.656
2000 Nathan A, Park B, Sazonov A, Tao S, Gu ZH, Chan I, Servati P, Karim K, Charania T, Striakhilev D, Ma Q, Murthy RVR. Thin film imaging technology on glass and plastic Proceedings of the International Conference On Microelectronics, Icm. 2000: 11-14. DOI: 10.1109/ICM.2000.916404  0.738
2000 Nathan A. Transduction principles of a-si : H schottky diode x-ray image sensors Ieee Transactions On Electron Devices. 47: 2093-2100. DOI: 10.1109/16.877171  0.408
2000 Nathan A, Murthy RVR, Park B, Chamberlain SG. High performance a-Si:H thin film transistors based on aluminum gate metallization Microelectronics Reliability. 40: 947-953. DOI: 10.1016/S0026-2714(00)00012-3  0.451
2000 Nathan A, Park B, Sazonov A, Tao S, Chan I, Servati P, Karim K, Charania T, Striakhilev D, Ma Q, Murthy RVR. Amorphous silicon detector and thin film transistor technology for large-area imaging of X-rays Microelectronics Journal. 31: 883-891. DOI: 10.1016/S0026-2692(00)00082-3  0.648
2000 Sazonov A, Nathan A, Striakhilev D. Materials optimization for thin film transistors fabricated at low temperature on plastic substrate Journal of Non-Crystalline Solids. 266: 1329-1334. DOI: 10.1016/S0022-3093(99)00946-1  0.453
2000 Servati P, Nathan A, Sazonov A. A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions Materials Research Society Symposium - Proceedings. 609.  0.665
1999 Sazonov A, Nathan A, Murthy RVR, Chamberlain SG. Fabrication of a-Si:H Tfts at 120°C on Flexible Polyimide Substrates Mrs Proceedings. 558: 375. DOI: 10.1557/Proc-558-375  0.43
1999 Ma Q, Nathan A, Murthy RVR. Ito/A-Si:H Schottky Photodiode With Low Leakage Current And High Stability Mrs Proceedings. 558: 231. DOI: 10.1557/Proc-558-231  0.671
1999 Ma Q, Nathan A. Room‐Temperature Sputter Deposition of Polycrystalline Indium‐Tin Oxide Electrochemical and Solid State Letters. 2: 542-543. DOI: 10.1149/1.1390897  0.589
1999 Aflatooni K, Hornsey R, Nathan A. Reverse current instabilities in amorphous silicon Schottky diodes: modeling and experiments Ieee Transactions On Electron Devices. 46: 1417-1422. DOI: 10.1109/16.772485  0.433
1999 Chen XY, Deen MJ, van Rheenen AD, Peng CX, Nathan A. Low-frequency noise in a thin active layer α-Si:H thin-film transistors Journal of Applied Physics. 85: 7952-7957. DOI: 10.1063/1.370614  0.304
1998 Murthy RVR, Ma Q, Nathan A, Chamberlain SG. Effect of Nh 3 /SiH 4 Gas Ratios of Top Nitride Layer on Stability and Leakage in a-Si:H Thin Film Transistors Mrs Proceedings. 507: 73. DOI: 10.1557/Proc-507-73  0.621
1998 Pham HH, Nathan A. Interconnect Capacitance Extraction in Large-Area a-Si Imaging Systems Mrs Proceedings. 507: 61. DOI: 10.1557/Proc-507-61  0.451
1998 Murthy RVR, Pereira D, Park B, Nathan A, Chamberlain SG. Compact Spice Modeling and Design Optimization of Low Leakage a-Si:H TFTs for Large-Area Imaging Systems Mrs Proceedings. 507: 415. DOI: 10.1557/Proc-507-415  0.39
1998 Park B, Murthy RVR, Sazonov A, Nathan A, Chamberlain SG. Process Integration of A-Si:H Schottky Diode and thin Film Transistor for Low-Energy X-Ray Imaging Applications Mrs Proceedings. 507: 237. DOI: 10.1557/Proc-507-237  0.453
1998 Park B, Murthy RVR, Benaissa K, Aflatooni K, Nathan A, Hornsey RI, Chamberlain SG. Effect of deposition temperature on the structural properties of n+ μc-Si:H films Journal of Vacuum Science and Technology. 16: 902-905. DOI: 10.1116/1.581033  0.404
1998 Lu Y, Nathan A. Erratum: “Metglas thin film with as-deposited domain alignment for smart sensor and actuator applications” [Appl. Phys. Lett. 70, 526 (1997)] Applied Physics Letters. 73: 2690-2690. DOI: 10.1063/1.122555  0.312
1998 Benaissa K, Nathan A. Silicon anti-resonant reflecting optical waveguides for sensor applications Sensors and Actuators a-Physical. 65: 33-44. DOI: 10.1016/S0924-4247(97)01645-2  0.356
1997 Aflatooni K, Hornsey R, Nathan A. Time Dependence of the Reverse Current in Amorphous Silicon Schottky Diodes Mrs Proceedings. 467. DOI: 10.1557/Proc-467-925  0.423
1997 Hornsey RI, Mahnke T, Madeira P, Aflatooni K, Nathan A. Stability of Amorphous Silicon Thin Film Transistors for Analog Circuit Applications Mrs Proceedings. 467. DOI: 10.1557/Proc-467-887  0.52
1997 Shur MS, Slade HC, Ytterdal T, Wang L, Xu Z, Hack M, Aflatooni K, Byun Y, Chen Y, Froggatt M, Krishnan A, Mei P, Meiling H, Min B-, Nathan A, et al. Modeling and Scaling of a-Si:H and Poly-Si Thin Film Transistors Mrs Proceedings. 467: 831. DOI: 10.1557/Proc-467-831  0.483
1997 Aflatooni K, Nathan A, Hornsey RI, Cunningham IA. A novel detection scheme for large area imaging of low energy X-rays using amorphous silicon technology Sensors. 2: 1299-1302. DOI: 10.1109/Sensor.1997.635474  0.382
1997 Lu Y, Nathan A. Metglas thin film with as-deposited domain alignment for smart sensor and actuator applications Applied Physics Letters. 70: 526-528. DOI: 10.1063/1.119273  0.328
1997 Hornsey RI, Aflatooni K, Nathan A. Reverse current transient behavior in amorphous silicon Schottky diodes at low biases Applied Physics Letters. 70: 3260-3262. DOI: 10.1063/1.119141  0.442
1996 Miri AM, Gudem PS, Chamberlain SG, Nathan A. A Novel Device Structure for High Voltage, High Performance Amorphous Silicon Thin-Film Transistors Mrs Proceedings. 420. DOI: 10.1557/Proc-420-93  0.469
1996 Aflatooni K, Nathan A, Hornsey R. Low frequency noise behavior in a-Si:H Schottky barrier devices Mrs Proceedings. 420. DOI: 10.1557/Proc-420-747  0.42
1996 Miri AM, Chamberlain SG, Nathan A. Effects of Deposition Power and Temperature on the Properties of Heavily Doped Microcrystalline Silicon Films Mrs Proceedings. 420: 307. DOI: 10.1557/Proc-420-307  0.393
1996 O N, Nathan A. Magnetic pattern recognition sensor arrays using CCD readout Canadian Journal of Physics. 74: 143-146. DOI: 10.1139/P96-848  0.31
1996 Nathan A. Microsensors for physical signals: Principles, device design, and fabrication technologies Canadian Journal of Physics. 74: 115-130. DOI: 10.1139/P96-844  0.353
1996 Benaissa K, Nathan A. IC compatible optomechanical pressure sensors using Mach-Zehnder interferometry Ieee Transactions On Electron Devices. 43: 1571-1582. DOI: 10.1109/16.535351  0.331
1996 Mohajerzadeh S, Nathan A. Modeling noise correlation behavior in dual-collector magnetotransistors using small signal equivalent circuit analysis Ieee Transactions On Electron Devices. 43: 883-888. DOI: 10.1109/16.502119  0.338
1995 Benaissa K, Lu Y, Nathan A. Design and fabrication of ARROW thermo-optic modulators Proceedings of Spie. 2641: 28-31. DOI: 10.1117/12.220938  0.324
1994 Swart NR, Nathan A. Coupled electrothermal modeling of microheaters using SPICE Ieee Transactions On Electron Devices. 41: 920-925. DOI: 10.1109/16.293302  0.321
1994 Mohajerzadeh S, Nathan A, Selvakumar CR. Numerical simulation of a p-n-p-n color sensor for simultaneous color detection Sensors and Actuators a-Physical. 44: 119-124. DOI: 10.1016/0924-4247(94)00793-4  0.307
1994 Swart NR, Nathan A. Design optimisation of integrated microhotplates Sensors and Actuators a-Physical. 43: 3-10. DOI: 10.1016/0924-4247(93)00672-Q  0.324
1993 Nathan A, Bhatnagar Y, Vadekar A, Huang W. Fabrication of a silicon Mach-Zehnder interferometer for mechanical measurands Fibers. 1793: 19-26. DOI: 10.1117/12.141226  0.417
1993 Nathan A, Allegretto W. Geometric Factor for Hall Mobility Characterization Using the van der Pauw Dual Configuration Ieee Transactions On Electron Devices. 40: 1508-1511. DOI: 10.1109/16.223712  0.332
1993 Bhatnagar YK, Nathan A. On pyramidal protrusions in anisotropic etching of silicon Sensors and Actuators a-Physical. 36: 233-240. DOI: 10.1016/0924-4247(93)80198-P  0.378
1993 McGregor JM, Manku T, Noël JP, Roulston DJ, Nathan A, Houghton DC. Measured in-plane hole drift and Hall mobility in heavily-doped strained p-type Si1-xGex Journal of Electronic Materials. 22: 319-321. DOI: 10.1007/Bf02661384  0.314
1992 Manku T, Nathan A. Electron drift mobility model for devices based on unstrained and coherently strained Si/sub 1-x/Ge/sub x/ grown on silicon substrate Ieee Transactions On Electron Devices. 39: 2082-2089. DOI: 10.1109/16.155881  0.367
1992 Kung W, Nathan A. A CAD model of low frequency noise behaviour in dual-collector bipolar transistors Microelectronics Journal. 23: 457-462. DOI: 10.1016/0026-2692(92)90079-G  0.307
1991 Allegretto W, Nathan A, Baltes H. Numerical Analysis of Magnetic-Field-Sensitive Bipolar Devices Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 10: 501-511. DOI: 10.1109/43.75633  0.312
1991 Jain SC, Nathan A, Briglio DR, Roulston DJ, Selvakumar CR, Yang T. Band-to-band and free-carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature Journal of Applied Physics. 69: 3687-3690. DOI: 10.1063/1.348485  0.353
1991 Castagnetti R, Baltes H, Nathan A. Noise correlation and operating conditions of dual-collector magnetotransistors Sensors and Actuators a-Physical. 26: 363-367. DOI: 10.1016/0924-4247(91)87017-W  0.332
1987 Ristic L, Baltes HP, Filanovsky I, Briglio DR, Smy T, Nathan A. Lateral transistor structure optimization with respect to current gain Canadian Journal of Physics. 65: 991-994. DOI: 10.1139/P87-158  0.363
1987 Nathan A, Allegretto W, Baltes HP, Smy T. Carrier transport in GaAs Hall-cross devices Canadian Journal of Physics. 65: 956-960. DOI: 10.1139/P87-150  0.312
1987 Briglio DR, Nathan A, Baltes HP. Measurement of Hall mobility in n-channel silicon inversion layer Canadian Journal of Physics. 65: 842-845. DOI: 10.1139/P87-128  0.348
1985 Nathan A, Huiser AMJ, Baltes HP, Schmidt-Weinmar HG. A triple-drain MOSFET magnetic-field sensor Canadian Journal of Physics. 63: 695-698. DOI: 10.1139/P85-107  0.311
1985 Nathan A, Andor L, Baltes HP, Schmidt-Weinmar HG. Modeling of a Dual-Drain NMOS Magnetic-Field Sensor Ieee Journal of Solid-State Circuits. 20: 819-821. DOI: 10.1109/Jssc.1985.1052390  0.339
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