| Year |
Citation |
Score |
| 2024 |
Gong P, Yuan S, Yu Z, Xiao T, Li H, Ma S, Bao W, Xu Z, Zhou P, Zhang DW, Li Q, Sun Z. Long-Range Epitaxial MOF Electronics for Continuous Monitoring of Human Breath Ammonia. Journal of the American Chemical Society. PMID 38291728 DOI: 10.1021/jacs.3c12135 |
0.397 |
|
| 2023 |
Xiaojiao G, Wang D, Zhang D, Ma J, Wang X, Chen X, Tong L, Zhang X, Zhu J, Yang P, Gou S, Yue X, Sheng C, Xu Z, An Z, ... ... Bao W, et al. Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate. Nanotechnology. PMID 37669634 DOI: 10.1088/1361-6528/acf6c2 |
0.354 |
|
| 2021 |
Sheng Y, Zhang L, Li F, Chen X, Xie Z, Nan H, Xu Z, Zhang DW, Chen J, Pu Y, Xiao S, Bao W. A novel contact engineering method for transistors based on two-dimensional materials Journal of Materials Science & Technology. 69: 15-19. DOI: 10.1016/J.Jmst.2020.05.079 |
0.361 |
|
| 2020 |
Jing H, Peng R, Ma RM, He J, Zhou Y, Yang Z, Li CY, Liu Y, Guo X, Zhu Y, Wang D, Su J, Sun C, Bao W, Wang M. Flexible Ultrathin Single-Crystalline Perovskite Photodetector. Nano Letters. PMID 32941049 DOI: 10.1021/Acs.Nanolett.0C02468 |
0.352 |
|
| 2020 |
Wu B, Wang X, Tang H, Jiang W, Chen Y, Wang Z, Cui Z, Lin T, Shen H, Hu W, Meng X, Bao W, Wang J, Chu J. Multifunctional MoS Transistors with Electrolyte Gel Gating. Small (Weinheim An Der Bergstrasse, Germany). e2000420. PMID 32350995 DOI: 10.1002/Smll.202000420 |
0.446 |
|
| 2020 |
Wu J, Chen J, Wang C, Zhou Y, Ba K, Xu H, Bao W, Xu X, Carlsson A, Lazar S, Meingast A, Sun Z, Deng H. Metal-Organic Framework for Transparent Electronics. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 1903003. PMID 32328418 DOI: 10.1002/Advs.201903003 |
0.436 |
|
| 2020 |
Yang P, Shan Y, Chen J, Ekoya G, Han J, Qiu ZJ, Sun J, Chen F, Wang H, Bao W, Hu L, Zhang RJ, Liu R, Cong C. Remarkable quality improvement of as-grown monolayer MoS by sulfur vapor pretreatment of SiO/Si substrates. Nanoscale. PMID 31909408 DOI: 10.1039/C9Nr09129G |
0.416 |
|
| 2020 |
Liao F, Wang H, Guo X, Guo Z, Tong L, Riaud A, Sheng Y, Chen L, Sun Q, Zhou P, Zhang DW, Chai Y, Jiang X, Liu Y, Bao W. Charge transport and quantum confinement in MoS2 dual-gated transistors Journal of Semiconductors. 41: 072904. DOI: 10.1088/1674-4926/41/7/072904 |
0.419 |
|
| 2020 |
Li F, Ji S, Wu H, Zhou S, Niu W, Wei L, Bao W, Pu Y. The Role of the Height Fluctuation Effect in the Tunable Interfacial Electronic Structure of the Vertically Stacked BP/MoS2 Heterojunction The Journal of Physical Chemistry C. 124: 20256-20261. DOI: 10.1021/Acs.Jpcc.0C06441 |
0.373 |
|
| 2020 |
Xia Y, Wei L, Deng J, Zong L, Wang C, Chen X, Liang F, Luo C, Bao W, Xu Z, Zhou J, Pu Y, Wu X. Tuning Electrical and Optical Properties of MoSe
2
Transistors via Elemental Doping Advanced Materials Technologies. 5: 2000307. DOI: 10.1002/Admt.202000307 |
0.316 |
|
| 2019 |
Liao F, Deng J, Chen X, Wang Y, Zhang X, Liu J, Zhu H, Chen L, Sun Q, Hu W, Wang J, Zhou J, Zhou P, Zhang DW, Wan J, ... Bao W, et al. A Dual-Gate MoS Photodetector Based on Interface Coupling Effect. Small (Weinheim An Der Bergstrasse, Germany). e1904369. PMID 31769618 DOI: 10.1002/Smll.201904369 |
0.34 |
|
| 2019 |
Chen J, Wang Q, Sheng Y, Cao G, Yang P, Shan Y, Liao F, Muhammad Z, Bao W, Hu L, Liu R, Cong C, Qiu ZJ. High-performance WSe2 photodetector based on laser-induced p-n junction. Acs Applied Materials & Interfaces. PMID 31659890 DOI: 10.1021/Acsami.9B13948 |
0.325 |
|
| 2019 |
Sun Y, Zhuang P, Jiang W, Xu H, Zhang S, Xuan N, Ba K, Liu H, Wang J, Bao W, Shen J, Sun Z. Phase, Conductivity, and Surface Coordination Environment in Two-Dimensional Electrochemistry. Acs Applied Materials & Interfaces. PMID 31268649 DOI: 10.1021/Acsami.9B03673 |
0.393 |
|
| 2019 |
Zhang S, Xu H, Liao F, Sun Y, Ba K, Sun Z, Qiu ZJ, Xu Z, Zhu H, Chen L, Sun QQ, Zhou P, Zhang DW, Bao WZ. Wafer-scale transferred multilayer MoS2 for high performance field effect transistors. Nanotechnology. PMID 30641493 DOI: 10.1088/1361-6528/Aafe24 |
0.405 |
|
| 2019 |
Liu B, Sheng Y, Huang S, Guo Z, Ba K, Yan H, Bao W, Sun Z. Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway Chemistry of Materials. 31: 6105-6109. DOI: 10.1021/Acs.Chemmater.9B01095 |
0.583 |
|
| 2019 |
Liao F, Sheng Y, Guo Z, Tang H, Wang Y, Zong L, Chen X, Riaud A, Zhu J, Xie Y, Chen L, Zhu H, Sun Q, Zhou P, Jiang X, ... ... Bao W, et al. MoS2 dual-gate transistors with electrostatically doped contacts Nano Research. 12: 2515-2519. DOI: 10.1007/S12274-019-2478-5 |
0.393 |
|
| 2019 |
Tang H, Zhang H, Chen X, Wang Y, Zhang X, Cai P, Bao W. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides Science in China Series F: Information Sciences. 62: 220401. DOI: 10.1007/S11432-019-2651-X |
0.406 |
|
| 2019 |
Wu B, Wang X, Tang H, Lin T, Shen H, Hu W, Meng X, Bao W, Wang J, Chu J. A study on ionic gated MoS2 phototransistors Science China Information Sciences. 62. DOI: 10.1007/S11432-019-1472-6 |
0.399 |
|
| 2018 |
Xu H, Zhang H, Guo Z, Shan Y, Wu S, Wang J, Hu W, Liu H, Sun Z, Luo C, Wu X, Xu Z, Zhang DW, Bao W, Zhou P. High-Performance Wafer-Scale MoS Transistors toward Practical Application. Small (Weinheim An Der Bergstrasse, Germany). e1803465. PMID 30328296 DOI: 10.1002/Smll.201803465 |
0.407 |
|
| 2018 |
Guo Z, Chen Y, Zhang H, Wang J, Hu W, Ding S, Zhang DW, Zhou P, Bao W. Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 5: 1800237. PMID 30250784 DOI: 10.1002/Advs.201800237 |
0.398 |
|
| 2018 |
Yan X, Zhang DW, Liu C, Bao W, Wang S, Ding S, Zheng G, Zhou P. High Performance Amplifier Element Realization via MoS/GaTe Heterostructures. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 5: 1700830. PMID 29721428 DOI: 10.1002/Advs.201700830 |
0.352 |
|
| 2018 |
Hou X, Zhang H, Liu C, Ding S, Bao W, Zhang DW, Zhou P. Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe Structure. Small (Weinheim An Der Bergstrasse, Germany). e1800319. PMID 29665261 DOI: 10.1002/Smll.201800319 |
0.322 |
|
| 2018 |
Zhang H, Chen Y, Ding SJ, Wang J, Bao WZ, Zhang DW, Zhou P. Two-dimensional negative capacitance field-effect transistor with organic ferroelectric. Nanotechnology. PMID 29583135 DOI: 10.1088/1361-6528/Aab9E6 |
0.411 |
|
| 2018 |
Wang C, Wu X, Ma Y, Mu G, Li Y, Luo C, Xu H, Zhang Y, Yang J, Tang X, Zhang J, Bao W, Duan C. Metallic few-layered VSe2 nanosheets: high two-dimensional conductivity for flexible in-plane solid-state supercapacitors Journal of Materials Chemistry. 6: 8299-8306. DOI: 10.1039/C8Ta00089A |
0.484 |
|
| 2018 |
Zan W, Zhang Q, Xu H, Liao F, Guo Z, Deng J, Wan J, Zhu H, Chen L, Sun Q, Ding S, Zhou P, Bao W, Zhang DW. Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS 2 devices Nano Research. 11: 3739-3745. DOI: 10.1007/S12274-017-1945-0 |
0.383 |
|
| 2018 |
Xu H, Zhang H, Liu Y, Zhang S, Sun Y, Guo Z, Sheng Y, Wang X, Luo C, Wu X, Wang J, Hu W, Xu Z, Sun Q, Zhou P, ... ... Bao W, et al. Controlled Doping of Wafer-Scale PtSe2
Films for Device Application Advanced Functional Materials. 29: 1805614. DOI: 10.1002/Adfm.201805614 |
0.417 |
|
| 2017 |
Ning H, Zeng Y, Kuang Y, Zheng Z, Zhou P, Yao R, Zhang H, Bao W, Chen G, Fang Z, Peng J. Room-temperature fabrication of high-performance amorphous In-Ga-Zn-O/Al2O3 thin-film transistors on ultra-smooth and clear nanopaper. Acs Applied Materials & Interfaces. PMID 28767216 DOI: 10.1021/Acsami.7B07525 |
0.386 |
|
| 2017 |
Li C, Yan X, Song X, Bao WZ, Ding SJ, Zhang DW, Zhou P. WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment. Nanotechnology. PMID 28726689 DOI: 10.1088/1361-6528/Aa810F |
0.332 |
|
| 2017 |
Song X, Guo Z, Zhang Q, Zhou P, Bao W, Zhang DW. Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides. Small (Weinheim An Der Bergstrasse, Germany). PMID 28722346 DOI: 10.1002/Smll.201700098 |
0.403 |
|
| 2017 |
Yan X, Liu C, Li C, Bao W, Ding S, Zhang DW, Zhou P. Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor. Small (Weinheim An Der Bergstrasse, Germany). PMID 28714240 DOI: 10.1002/Smll.201701478 |
0.405 |
|
| 2017 |
Liu C, Yan X, Zhang E, Song X, Sun Q, Ding S, Bao W, Xiu F, Zhou P, Zhang DW. Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts. Small (Weinheim An Der Bergstrasse, Germany). PMID 28296162 DOI: 10.1002/Smll.201604319 |
0.389 |
|
| 2017 |
Xu H, Liao F, Guo Z, Guo X, Zhou P, Bao W, Zhang DW. Recent progress in two-dimensional transition metal dichalcogenides: Material synthesis for microelectronics Chinese Science Bulletin. 62: 4237-4255. DOI: 10.1360/N972017-00851 |
0.471 |
|
| 2017 |
Li C, Yan X, Bao W, Ding S, Zhang DW, Zhou P. Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructures in MoS2 transistors Applied Physics Letters. 111: 193502. DOI: 10.1063/1.4997226 |
0.544 |
|
| 2017 |
Tao J, Fang Z, Zhang Q, Bao W, Zhu M, Yao Y, Wang Y, Dai J, Zhang A, Leng C, Henderson D, Wang Z, Hu L. Super-Clear Nanopaper from Agro-Industrial Waste for Green Electronics Advanced Electronic Materials. 3: 1600539. DOI: 10.1002/Aelm.201600539 |
0.337 |
|
| 2016 |
Wan J, Lacey SD, Dai J, Bao W, Fuhrer MS, Hu L. Tuning two-dimensional nanomaterials by intercalation: materials, properties and applications. Chemical Society Reviews. PMID 27704060 DOI: 10.1039/C5Cs00758E |
0.405 |
|
| 2016 |
Chen Y, Egan GC, Wan J, Zhu S, Jacob RJ, Zhou W, Dai J, Wang Y, Danner VA, Yao Y, Fu K, Wang Y, Bao W, Li T, Zachariah MR, et al. Ultra-fast self-assembly and stabilization of reactive nanoparticles in reduced graphene oxide films. Nature Communications. 7: 12332. PMID 27515900 DOI: 10.1038/Ncomms12332 |
0.475 |
|
| 2016 |
Zhang Q, Bao W, Gong A, Gong T, Ma D, Wan J, Dai J, Munday JN, He JH, Hu L, Zhang D. A highly sensitive, highly transparent, gel-gated MoS2 phototransistor on biodegradable nanopaper. Nanoscale. PMID 27396391 DOI: 10.1039/C6Nr01534D |
0.418 |
|
| 2016 |
Bao W, Pickel AD, Zhang Q, Chen Y, Yao Y, Wan J, Fu KK, Wang Y, Dai J, Zhu H, Drew D, Fuhrer M, Dames C, Hu L. Nanocarbon Paper: Flexible, High Temperature, Planar Lighting with Large Scale Printable Nanocarbon Paper (Adv. Mater. 23/2016). Advanced Materials (Deerfield Beach, Fla.). 28: 4566. PMID 27281044 DOI: 10.1002/Adma.201670157 |
0.398 |
|
| 2016 |
Bao W, Pickel AD, Zhang Q, Chen Y, Yao Y, Wan J, Fu KK, Wang Y, Dai J, Zhu H, Drew D, Fuhrer M, Dames C, Hu L. Flexible, High Temperature, Planar Lighting with Large Scale Printable Nanocarbon Paper. Advanced Materials (Deerfield Beach, Fla.). PMID 27000725 DOI: 10.1002/Adma.201506116 |
0.392 |
|
| 2016 |
Wan J, Shen F, Luo W, Zhou L, Dai J, Han X, Bao W, Xu Y, Panagiotopoulos J, Fan X, Urban D, Nie A, Shahbazian-Yassar R, Hu L. In situ transmission electron microscopy observation of sodiation-desodiation in a long cycle, high-capacity reduced graphene oxide sodium-ion battery anode Chemistry of Materials. 28: 6528-6535. DOI: 10.1021/Acs.Chemmater.6B01959 |
0.468 |
|
| 2015 |
Luo W, Wan J, Ozdemir B, Bao W, Chen Y, Dai J, Lin H, Xu Y, Gu F, Barone V, Hu L. Potassium Ion Batteries with Graphitic Materials. Nano Letters. PMID 26509225 DOI: 10.1021/Acs.Nanolett.5B03667 |
0.334 |
|
| 2015 |
Wang Y, Xiao S, Cai X, Bao W, Reutt-Robey J, Fuhrer MS. Electronic transport properties of Ir-decorated graphene. Scientific Reports. 5: 15764. PMID 26508279 DOI: 10.1038/Srep15764 |
0.594 |
|
| 2015 |
Xu K, Wang K, Zhao W, Bao W, Liu E, Ren Y, Wang M, Fu Y, Zeng J, Li Z, Zhou W, Song F, Wang X, Shi Y, Wan X, et al. The positive piezoconductive effect in graphene. Nature Communications. 6: 8119. PMID 26360786 DOI: 10.1038/Ncomms9119 |
0.735 |
|
| 2015 |
Fei Z, Iwinski EG, Ni G, Zhang LM, Bao W, Rodin AS, Lee Y, Wagner M, Liu M, Dai S, Goldflam M, Thiemens M, Keilmann F, Lau CN, Castro Neto AH, et al. Tunneling Plasmonics in Bilayer Graphene. Nano Letters. PMID 26222509 DOI: 10.1021/Acs.Nanolett.5B00912 |
0.784 |
|
| 2015 |
Wan J, Gu F, Bao W, Dai J, Shen F, Luo W, Han X, Urban D, Hu L. Sodium-Ion Intercalated Transparent Conductors with Printed Reduced Graphene Oxide Networks. Nano Letters. 15: 3763-9. PMID 25932654 DOI: 10.1021/Acs.Nanolett.5B00300 |
0.445 |
|
| 2015 |
Lacey SD, Wan J, von Wald Cresce A, Russell SM, Dai J, Bao W, Xu K, Hu L. Atomic force microscopy studies on molybdenum disulfide flakes as sodium-ion anodes. Nano Letters. 15: 1018-24. PMID 25549278 DOI: 10.1021/Nl503871S |
0.307 |
|
| 2015 |
Wagner M, Fei Z, McLeod AS, Maddox SJ, Rodin AS, Bao W, Iwinski EG, Zhao Z, Goldflam M, Liu M, Dominguez G, Thiemens M, Fogler MM, Castro-Neto AH, Lau CN, et al. Infrared Pump-Probe Spectroscopy of Plasmons in Graphene and Semiconductors Microscopy and Microanalysis. 21: 1415-1416. DOI: 10.1017/S1431927615007850 |
0.58 |
|
| 2015 |
Kang CF, Kuo WC, Bao W, Ho CH, Huang CW, Wu WW, Chu YH, Juang JY, Tseng SH, Hu L, He JH. Self-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devices Nano Energy. 13: 283-290. DOI: 10.1016/J.Nanoen.2015.02.033 |
0.309 |
|
| 2015 |
Wan J, Bao W, Liu Y, Dai J, Shen F, Zhou L, Cai X, Urban D, Li Y, Jungjohann K, Fuhrer MS, Hu L. In situ investigations of Li-MoS2 with planar batteries Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201401742 |
0.316 |
|
| 2014 |
Bao W, Fang Z, Wan J, Dai J, Zhu H, Han X, Yang X, Preston C, Hu L. Aqueous gating of van der Waals materials on bilayer nanopaper. Acs Nano. 8: 10606-12. PMID 25283598 DOI: 10.1021/Nn504125B |
0.446 |
|
| 2014 |
Bao W, Wan J, Han X, Cai X, Zhu H, Kim D, Ma D, Xu Y, Munday JN, Drew HD, Fuhrer MS, Hu L. Approaching the limits of transparency and conductivity in graphitic materials through lithium intercalation. Nature Communications. 5: 4224. PMID 24981857 DOI: 10.1038/Ncomms5224 |
0.463 |
|
| 2014 |
Wagner M, Fei Z, McLeod AS, Rodin AS, Bao W, Iwinski EG, Zhao Z, Goldflam M, Liu M, Dominguez G, Thiemens M, Fogler MM, Castro Neto AH, Lau CN, Amarie S, et al. Ultrafast and nanoscale plasmonic phenomena in exfoliated graphene revealed by infrared pump-probe nanoscopy. Nano Letters. 14: 894-900. PMID 24479682 DOI: 10.1021/Nl4042577 |
0.684 |
|
| 2014 |
Fang Z, Zhu H, Bao W, Preston C, Liu Z, Dai J, Li Y, Hu L. Highly transparent paper with tunable haze for green electronics Energy and Environmental Science. 7: 3313-3319. DOI: 10.1039/C4Ee02236J |
0.35 |
|
| 2014 |
Zhang H, Huang JW, Velasco J, Myhro K, Maldonado M, Tran DD, Zhao Z, Wang F, Lee Y, Liu G, Bao W, Lau CN. Transport in suspended monolayer and bilayer graphene under strain: A new platform for material studies Carbon. 69: 336-341. DOI: 10.1016/J.Carbon.2013.12.033 |
0.479 |
|
| 2013 |
Lee Y, Velasco J, Tran D, Zhang F, Bao W, Jing L, Myhro K, Smirnov D, Lau CN. Broken symmetry quantum Hall states in dual-gated ABA trilayer graphene. Nano Letters. 13: 1627-31. PMID 23527578 DOI: 10.1021/Nl4000757 |
0.764 |
|
| 2013 |
Lee Y, Myhro K, Tran D, Gilgren N, Velasco J, Bao W, Deo M, Lau CN. Band gap and correlated phenomena in bilayer and trilayer graphene Proceedings of Spie. 8725: 872506. DOI: 10.1117/12.2016521 |
0.625 |
|
| 2013 |
Ojeda-Aristizabal C, Bao W, Fuhrer MS. Thin-film barristor: A gate-tunable vertical graphene-pentacene device Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.035435 |
0.568 |
|
| 2013 |
Wang Y, Bao W, Xiao S, Fuhrer MS, Reutt-Robey J. Electrical detection of CF3Cl phase transitions on graphene Applied Physics Letters. 103. DOI: 10.1063/1.4828565 |
0.449 |
|
| 2013 |
Bao W, Cai X, Kim D, Sridhara K, Fuhrer MS. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects Applied Physics Letters. 102. DOI: 10.1063/1.4789365 |
0.384 |
|
| 2012 |
Bao W, Myhro K, Zhao Z, Chen Z, Jang W, Jing L, Miao F, Zhang H, Dames C, Lau CN. In situ observation of electrostatic and thermal manipulation of suspended graphene membranes. Nano Letters. 12: 5470-4. PMID 23043470 DOI: 10.1021/Nl301836Q |
0.813 |
|
| 2012 |
Fei Z, Rodin AS, Andreev GO, Bao W, McLeod AS, Wagner M, Zhang LM, Zhao Z, Thiemens M, Dominguez G, Fogler MM, Castro Neto AH, Lau CN, Keilmann F, Basov DN. Gate-tuning of graphene plasmons revealed by infrared nano-imaging. Nature. 487: 82-5. PMID 22722866 DOI: 10.1038/Nature11253 |
0.77 |
|
| 2012 |
Bao W, Velasco J, Zhang F, Jing L, Standley B, Smirnov D, Bockrath M, MacDonald AH, Lau CN. Evidence for a spontaneous gapped state in ultraclean bilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. 109: 10802-5. PMID 22685212 DOI: 10.1073/Pnas.1205978109 |
0.716 |
|
| 2012 |
Zhang H, Bao W, Zhao Z, Huang JW, Standley B, Liu G, Wang F, Kratz P, Jing L, Bockrath M, Lau CN. Visualizing electrical breakdown and ON/OFF states in electrically switchable suspended graphene break junctions. Nano Letters. 12: 1772-5. PMID 22429115 DOI: 10.1021/Nl203160X |
0.754 |
|
| 2012 |
Velasco J, Jing L, Bao W, Lee Y, Kratz P, Aji V, Bockrath M, Lau CN, Varma C, Stillwell R, Smirnov D, Zhang F, Jung J, MacDonald AH. Transport spectroscopy of symmetry-broken insulating states in bilayer graphene. Nature Nanotechnology. 7: 156-60. PMID 22266634 DOI: 10.1038/Nnano.2011.251 |
0.737 |
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| 2012 |
Kalugin NG, Jing L, Bao W, Wickey L, Del Barga C, Ovezmyradov M, Shaner EA, Lau CN. Graphene-based quantum hall effect infrared photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.921485 |
0.606 |
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| 2012 |
Chen CC, Bao W, Chang CC, Zhao Z, Lau CN, Cronin SB. Raman spectroscopy of substrate-induced compression and substrate doping in thermally cycled graphene Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.035431 |
0.551 |
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| 2012 |
Lau CN, Bao W, Velasco J. Properties of suspended graphene membranes Materials Today. 15: 238-245. DOI: 10.1016/S1369-7021(12)70114-1 |
0.575 |
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| 2012 |
Velasco J, Lee Y, Jing L, Liu G, Bao W, Lau CN. Quantum transport in double-gated graphene devices Solid State Communications. 152: 1301-1305. DOI: 10.1016/J.Ssc.2012.04.024 |
0.638 |
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| 2011 |
Fei Z, Andreev GO, Bao W, Zhang LM, S McLeod A, Wang C, Stewart MK, Zhao Z, Dominguez G, Thiemens M, Fogler MM, Tauber MJ, Castro-Neto AH, Lau CN, Keilmann F, et al. Infrared nanoscopy of dirac plasmons at the graphene-SiO₂ interface. Nano Letters. 11: 4701-5. PMID 21972938 DOI: 10.1021/Nl202362D |
0.754 |
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| 2011 |
Zhang H, Bekyarova E, Huang JW, Zhao Z, Bao W, Wang F, Haddon RC, Lau CN. Aryl functionalization as a route to band gap engineering in single layer graphene devices. Nano Letters. 11: 4047-51. PMID 21875083 DOI: 10.1021/Nl200803Q |
0.774 |
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| 2011 |
Vandeparre H, Piñeirua M, Brau F, Roman B, Bico J, Gay C, Bao W, Lau CN, Reis PM, Damman P. Wrinkling hierarchy in constrained thin sheets from suspended graphene to curtains. Physical Review Letters. 106: 224301. PMID 21702603 DOI: 10.1103/Physrevlett.106.224301 |
0.713 |
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| 2011 |
Velasco J, Zhao Z, Zhang H, Wang F, Wang Z, Kratz P, Jing L, Bao W, Shi J, Lau CN. Suspension and measurement of graphene and Bi2Se3 thin crystals. Nanotechnology. 22: 285305. PMID 21636884 DOI: 10.1088/0957-4484/22/28/285305 |
0.695 |
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| 2011 |
Deshpande A, Bao W, Zhao Z, Lau CN, Leroy B. Spatial mapping of the Dirac point in monolayer and bilayer graphene Ieee Transactions On Nanotechnology. 10: 88-91. DOI: 10.1109/Tnano.2010.2057256 |
0.587 |
|
| 2011 |
Deshpande A, Bao W, Zhao Z, Lau CN, Leroy BJ. Imaging charge density fluctuations in graphene using Coulomb blockade spectroscopy Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.155409 |
0.519 |
|
| 2011 |
Kalugin NG, Jing L, Bao W, Wickey L, Del Barga C, Ovezmyradov M, Shaner EA, Lau CN. Graphene-based quantum Hall effect infrared photodetector operating at liquid Nitrogen temperatures Applied Physics Letters. 99. DOI: 10.1063/1.3609320 |
0.525 |
|
| 2011 |
Bao W, Jing L, Velasco J, Lee Y, Liu G, Tran D, Standley B, Aykol M, Cronin SB, Smirnov D, Koshino M, McCann E, Bockrath M, Lau CN. Stacking-dependent band gap and quantum transport in trilayer graphene Nature Physics. DOI: 10.1038/Nphys2103 |
0.594 |
|
| 2010 |
Bao W, Zhao Z, Zhang H, Liu G, Kratz P, Jing L, Velasco J, Smirnov D, Lau CN. Magnetoconductance oscillations and evidence for fractional quantum Hall states in suspended bilayer and trilayer graphene. Physical Review Letters. 105: 246601. PMID 21231541 DOI: 10.1103/Physrevlett.105.246601 |
0.724 |
|
| 2010 |
Jing L, Velasco J, Kratz P, Liu G, Bao W, Bockrath M, Lau CN. Quantum transport and field-induced insulating states in bilayer graphene pnp junctions. Nano Letters. 10: 4000-4. PMID 20863070 DOI: 10.1021/Nl101901G |
0.737 |
|
| 2010 |
Jang W, Chen Z, Bao W, Lau CN, Dames C. Thickness-dependent thermal conductivity of encased graphene and ultrathin graphite. Nano Letters. 10: 3909-13. PMID 20836537 DOI: 10.1021/Nl101613U |
0.746 |
|
| 2010 |
Ghosh S, Bao W, Nika DL, Subrina S, Pokatilov EP, Lau CN, Balandin AA. Dimensional crossover of thermal transport in few-layer graphene. Nature Materials. 9: 555-8. PMID 20453845 DOI: 10.1038/Nmat2753 |
0.755 |
|
| 2010 |
Velasco J, Liu G, Jing L, Kratz P, Zhang H, Bao W, Bockrath M, Lau CN. Probing charging and localization in the quantum Hall regime by graphenep–n–pjunctions Physical Review B. 81. DOI: 10.1103/Physrevb.81.121407 |
0.551 |
|
| 2010 |
McCreary KM, Pi K, Swartz AG, Han W, Bao W, Lau CN, Guinea F, Katsnelson MI, Kawakami RK. Effect of cluster formation on graphene mobility Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115453 |
0.423 |
|
| 2009 |
Chen CC, Bao W, Theiss J, Dames C, Lau CN, Cronin SB. Raman spectroscopy of ripple formation in suspended graphene. Nano Letters. 9: 4172-6. PMID 19807131 DOI: 10.1021/Nl9023935 |
0.749 |
|
| 2009 |
Bao W, Miao F, Chen Z, Zhang H, Jang W, Dames C, Lau CN. Controlled ripple texturing of suspended graphene and ultrathin graphite membranes. Nature Nanotechnology. 4: 562-6. PMID 19734927 DOI: 10.1038/Nnano.2009.191 |
0.816 |
|
| 2009 |
Wei P, Bao W, Pu Y, Lau CN, Shi J. Anomalous thermoelectric transport of Dirac particles in graphene. Physical Review Letters. 102: 166808. PMID 19518743 DOI: 10.1103/Physrevlett.102.166808 |
0.727 |
|
| 2009 |
Han W, Wang WH, Pi K, McCreary KM, Bao W, Li Y, Miao F, Lau CN, Kawakami RK. Electron-hole asymmetry of spin injection and transport in single-layer graphene. Physical Review Letters. 102: 137205. PMID 19392401 DOI: 10.1103/Physrevlett.102.137205 |
0.762 |
|
| 2009 |
Han W, Pi K, Wang WH, McCreary KM, Li Y, Bao W, Wei P, Shi J, Lau CN, Kawakami RK. Spin transport in graphite and graphene spin valves Proceedings of Spie - the International Society For Optical Engineering. 7398. DOI: 10.1117/12.826705 |
0.474 |
|
| 2009 |
Pi K, McCreary KM, Bao W, Han W, Chiang YF, Li Y, Tsai SW, Lau CN, Kawakami RK. Electronic doping and scattering by transition metals on graphene Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.075406 |
0.494 |
|
| 2009 |
Deshpande A, Bao W, Miao F, Lau CN, Leroy BJ. Spatially resolved spectroscopy of monolayer graphene on SiO2 Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.205411 |
0.727 |
|
| 2009 |
Velasco J, Liu G, Bao W, Ning Lau C. Electrical transport in high-quality graphenepnpjunctions New Journal of Physics. 11: 095008. DOI: 10.1088/1367-2630/11/9/095008 |
0.552 |
|
| 2009 |
Deshpande A, Bao W, Zhao Z, Lau CN, Leroy BJ. Mapping the Dirac point in gated bilayer graphene Applied Physics Letters. 95. DOI: 10.1063/1.3275755 |
0.495 |
|
| 2009 |
Chen Z, Jang W, Bao W, Lau CN, Dames C. Thermal contact resistance between graphene and silicon dioxide Applied Physics Letters. 95. DOI: 10.1063/1.3245315 |
0.549 |
|
| 2009 |
Han W, Pi K, Bao W, McCreary KM, Li Y, Wang WH, Lau CN, Kawakami RK. Electrical detection of spin precession in single layer graphene spin valves with transparent contacts Applied Physics Letters. 94. DOI: 10.1063/1.3147203 |
0.304 |
|
| 2009 |
Calizo I, Ghosh S, Bao W, Miao F, Ning Lau C, Balandin AA. Raman nanometrology of graphene: Temperature and substrate effects Solid State Communications. 149: 1132-1135. DOI: 10.1016/J.Ssc.2009.01.036 |
0.745 |
|
| 2009 |
Miao F, Bao W, Zhang H, Lau CN. Premature switching in graphene Josephson transistors Solid State Communications. 149: 1046-1049. DOI: 10.1016/J.Ssc.2009.01.035 |
0.684 |
|
| 2008 |
Standley B, Bao W, Zhang H, Bruck J, Lau CN, Bockrath M. Graphene-based atomic-scale switches. Nano Letters. 8: 3345-9. PMID 18729415 DOI: 10.1021/Nl801774A |
0.748 |
|
| 2008 |
Balandin AA, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F, Lau CN. Superior thermal conductivity of single-layer graphene. Nano Letters. 8: 902-7. PMID 18284217 DOI: 10.1021/Nl0731872 |
0.8 |
|
| 2008 |
Wang WH, Han W, Pi K, McCreary KM, Miao F, Bao W, Lau CN, Kawakami RK. Growth of atomically smooth MgO films on graphene by molecular beam epitaxy Applied Physics Letters. 93. DOI: 10.1063/1.3013820 |
0.67 |
|
| 2008 |
Liu G, Velasco J, Bao W, Lau CN. Fabrication of graphene p-n-p junctions with contactless top gates Applied Physics Letters. 92: 203103. DOI: 10.1063/1.2928234 |
0.548 |
|
| 2008 |
Ghosh S, Calizo I, Teweldebrhan D, Pokatilov EP, Nika DL, Balandin AA, Bao W, Miao F, Lau CN. Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits Applied Physics Letters. 92. DOI: 10.1063/1.2907977 |
0.703 |
|
| 2007 |
Miao F, Wijeratne S, Zhang Y, Coskun UC, Bao W, Lau CN. Phase-coherent transport in graphene quantum billiards. Science (New York, N.Y.). 317: 1530-3. PMID 17872440 DOI: 10.1126/Science.1144359 |
0.797 |
|
| 2007 |
Calizo I, Balandin AA, Bao W, Miao F, Lau CN. Temperature dependence of the Raman spectra of graphene and graphene multilayers. Nano Letters. 7: 2645-9. PMID 17718584 DOI: 10.1021/Nl071033G |
0.791 |
|
| 2007 |
Calizo I, Bao W, Miao F, Lau CN, Balandin AA. The effect of substrates on the Raman spectrum of graphene: Graphene- on-sapphire and graphene-on-glass Applied Physics Letters. 91: 201904. DOI: 10.1063/1.2805024 |
0.743 |
|
| 2007 |
Calizo I, Miao F, Bao W, Lau CN, Balandin AA. Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices Applied Physics Letters. 91: 71913. DOI: 10.1063/1.2771379 |
0.711 |
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