| Year |
Citation |
Score |
| 2014 |
Junesand C, Gau MH, Sun YT, Lourdudoss S, Lo I, Jimenez J, Postigo PA, Morales FM, Hernandez J, Molina S, Abdessamad A, Pozina G, Hultman L, Pirouz P. Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth Materials Express. 4: 41-53. DOI: 10.1166/mex.2014.1140 |
0.321 |
|
| 2013 |
Pirouz P. The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection Physica Status Solidi (a) Applications and Materials Science. 210: 181-186. DOI: 10.1002/Pssa.201200501 |
0.38 |
|
| 2010 |
Bayu-Aji LB, Pirouz P. Brittle-to-ductile transition temperature in InP Physica Status Solidi (a) Applications and Materials Science. 207: 1190-1195. DOI: 10.1002/Pssa.200925347 |
0.358 |
|
| 2008 |
Speer KM, Neudeck PG, Spry DJ, Trunek AJ, Pirouz P. Cross-sectional TEM and KOH-Etch studies of extended defects in 3C-SiC p + n junction diodes grown on 4H-SiC mesas Journal of Electronic Materials. 37: 672-680. DOI: 10.1007/S11664-007-0297-Z |
0.448 |
|
| 2007 |
Speer KM, Spry DJ, Trunek AJ, Neudeck PG, Crimp MA, Hile JT, Burda C, Pirouz P. Absence of dislocation motion in 3C-SiC pn diodes under forward bias Materials Science Forum. 556: 223-226. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.223 |
0.469 |
|
| 2007 |
Wang S, Pirouz P. Mechanical properties of undoped GaAs. III: Indentation experiments Acta Materialia. 55: 5526-5537. DOI: 10.1016/J.Actamat.2007.06.029 |
0.559 |
|
| 2007 |
Wang S, Pirouz P. Mechanical properties of undoped GaAs. II: The brittle-to-ductile transition temperature Acta Materialia. 55: 5515-5525. DOI: 10.1016/J.Actamat.2007.06.026 |
0.553 |
|
| 2007 |
Wang S, Pirouz P. Mechanical properties of undoped GaAs. Part I: Yield stress measurements Acta Materialia. 55: 5500-5514. DOI: 10.1016/J.Actamat.2007.06.008 |
0.564 |
|
| 2007 |
Zhang Z, Stahlbush RE, Pirouz P, Sudarshan TS. Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer Journal of Electronic Materials. 36: 539-542. DOI: 10.1007/S11664-007-0129-1 |
0.391 |
|
| 2007 |
Speer KM, Neudeck PG, Crimp MA, Burda C, Pirouz P. Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC Physica Status Solidi (a) Applications and Materials Science. 204: 2216-2221. DOI: 10.1002/Pssa.200675446 |
0.45 |
|
| 2006 |
Galeckas A, Linnros J, Pirouz P. Recombination-induced stacking faults: evidence for a general mechanism in hexagonal SiC. Physical Review Letters. 96: 025502. PMID 16486592 DOI: 10.1103/Physrevlett.96.025502 |
0.371 |
|
| 2006 |
Maximenko SI, Pirouz P, Sudarshan TS. Open Core Dislocations and Surface Energy of SiC Materials Science Forum. 439-442. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.439 |
0.326 |
|
| 2006 |
Galeckas A, Hallen A, Schöner A, Linnros J, Pirouz P. Investigation of structural stability in 4H-SiC structures with heavy ion implanted interface Materials Science Forum. 527: 395-398. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.395 |
0.361 |
|
| 2006 |
Maximenko SI, Pirouz P, Sudarshan TS. Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes Materials Science Forum. 367-370. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.367 |
0.361 |
|
| 2006 |
Okojie RS, Huang X, Dudley M, Zhang M, Pirouz P. Process-induced deformations and stacking faults in 4H-SiC Materials Research Society Symposium Proceedings. 911: 145-150. DOI: 10.1557/Proc-0911-B07-02 |
0.431 |
|
| 2006 |
Galeckas A, Hallén A, Majdi S, Linnros J, Pirouz P. Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.233203 |
0.355 |
|
| 2006 |
Pirouz P, Zhang M, Hobgood HMD, Lancin M, Douin J, Pichaud B. Nitrogen doping and multiplicity of stacking faults in SiC Philosophical Magazine. 86: 4685-4697. DOI: 10.1080/14786430600724470 |
0.353 |
|
| 2005 |
Galeckas A, Kortegaard Nielsen H, Linnros J, Hallén A, Svensson BG, Pirouz P. Investigation of stacking fault formation in hydrogen bombarded 4H-SiC Materials Science Forum. 483: 327-330. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.327 |
0.318 |
|
| 2005 |
Wang S, Zhang M, Bradby J, Pirouz P. Static microindentation and displacement-sensitive indentation tests on undoped GaAs Materials Research Society Symposium Proceedings. 904: 60-65. DOI: 10.1557/Proc-0904-Bb05-08 |
0.534 |
|
| 2005 |
Maximenko SI, Pirouz P, Sudarshan TS. Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes Applied Physics Letters. 87. DOI: 10.1063/1.1999297 |
0.382 |
|
| 2005 |
Cowen J, Lucas L, Ernst F, Pirouz P, Hepp A, Bailey S. Liquid-phase deposition of single-phase alpha-copper-indium-diselenide Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 116: 311-319. DOI: 10.1016/J.Mseb.2004.05.057 |
0.332 |
|
| 2005 |
Pirouz P, Wang S, Bayu-Aji B, Zhang M, Démenet JL. The effect of dislocation core structure on the plastic and fracture behavior of GaAs and InP Physica Status Solidi C: Conferences. 2: 1973-1986. DOI: 10.1002/Pssc.200460539 |
0.475 |
|
| 2004 |
Zhang M, Hobgood HM, Treu M, Pirouz P. Generation of stacking faults in highly doped n-type 4H-SiC substrates Materials Science Forum. 457: 759-762. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.759 |
0.367 |
|
| 2004 |
Brillson LJ, Tumakha S, Okojie RS, Zhang M, Pirouz P. SiC studied via LEEN and cathodoluminescence spectroscopy Materials Science Forum. 457: 543-548. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.543 |
0.381 |
|
| 2004 |
Okojie RS, Zhang M, Pirouz P. Residual stresses and stacking faults in N-Type 4H-SiC epllayers Materials Science Forum. 457: 529-532. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.529 |
0.383 |
|
| 2004 |
Zhang M, Hobgood HM, Pirouz P. Deformation of 4H-SiC single crystals oriented for prism slip Materials Science Forum. 457: 371-374. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.371 |
0.406 |
|
| 2004 |
Zhang M, Lendenmann H, Pirouz P. TEM of dislocations in forward-biased 4H-SiC PiN diodes Materials Science Forum. 457: 359-362. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.359 |
0.39 |
|
| 2004 |
Pirouz P, Zhang M, Galeckas A, Linnros J. Microstructural aspects and mechanism of degradation of 4H-SiC PiN diodes under forward biasing Materials Research Society Symposium Proceedings. 815: 91-102. DOI: 10.1557/Proc-815-J6.1 |
0.313 |
|
| 2003 |
Galeckas A, Linnros J, Pirouz P. In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes Materials Science Forum. 433: 933-936. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.933 |
0.33 |
|
| 2003 |
Zhang M, Hobgood HM, Demenet JL, Pirouz P. Transition from brittle fracture to ductile behavior in 4H-SiC Journal of Materials Research. 18: 1087-1095. DOI: 10.1557/Jmr.2003.0150 |
0.351 |
|
| 2003 |
Zhang M, Pirouz P, Lendenmann H. Transmission electron microscopy investigation of dislocations in forward-biased 4H-SiC p-i-n diodes Applied Physics Letters. 83: 3320-3322. DOI: 10.1063/1.1620684 |
0.395 |
|
| 2003 |
Pirouz P, Zhang M, Demenet JL, Hobgood HM. Yield and fracture properties of the wide band-gap semiconductor 4H-SiC Journal of Applied Physics. 93: 3279-3290. DOI: 10.1063/1.1555255 |
0.355 |
|
| 2002 |
Zhang M, Hobgood HM, Demenet JL, Pirouz P. The brittle-to-ductile transition in 4H-SiC Materials Science Forum. 389: 767-770. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.767 |
0.349 |
|
| 2002 |
Bai S, Wagner G, Shishkin E, Choyke WJ, Devaty RP, Zhang M, Pirouz P, Kimoto T. Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor Materials Science Forum. 389: 589-592. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.589 |
0.392 |
|
| 2002 |
Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P. Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 554-560. DOI: 10.1116/1.1451303 |
0.369 |
|
| 2002 |
Demenet JL, Rabier J, Milhet X, Hong MH, Pirouz P, Stretton I, Cordier P. Microstructures of 4H-SiC single crystals deformed under very high stresses Journal of Physics Condensed Matter. 14: 12961-12966. DOI: 10.1088/0953-8984/14/48/338 |
0.324 |
|
| 2002 |
Pirouz P, Zhang M, Demenet JL, Hobgood HM. Transition from brittleness to ductility in SiC Journal of Physics Condensed Matter. 14: 12929-12945. DOI: 10.1088/0953-8984/14/48/335 |
0.352 |
|
| 2002 |
Lagerlöf KPD, Castaing J, Pirouz P, Heuer AH. Nucleation and growth of deformation twins: A perspective based on the double-cross-slip mechanism of deformation twinning Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 82: 2841-2854. DOI: 10.1080/01418610208240069 |
0.374 |
|
| 2002 |
Brillson LJ, Tumakha S, Jessen GH, Okojie RS, Zhang M, Pirouz P. Thermal and doping dependence of 4H-SiC polytype transformation Applied Physics Letters. 81: 2785-2787. DOI: 10.1063/1.1512816 |
0.427 |
|
| 2002 |
Galeckas A, Linnros J, Pirouz P. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias Applied Physics Letters. 81: 883-885. DOI: 10.1063/1.1496498 |
0.349 |
|
| 2001 |
Wu C, Chung J, Hong MH, Zorman CA, Pirouz P, Mehregany M. A Comparison of SiO 2 and Si 3 N 4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si Materials Science Forum. 171-174. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.171 |
0.428 |
|
| 2001 |
Wu CH, Chung J, Hong MH, Zorman CA, Pirouz P, Mehregany M. Microstructure and surface morphology of thin 3C-SiC films grown on (100) Si substrates using an APCVD-based carbonization process Materials Science Forum. 353: 167-170. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.167 |
0.327 |
|
| 2001 |
Jacob C, Pirouz P, Nishino S. Low temperature selective and lateral epitaxial growth of silicon carbide on patterned silicon substrates Materials Science Forum. 353: 127-130. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.127 |
0.672 |
|
| 2001 |
Lee KH, Teker K, Zhang M, Chung J, Pirouz P. Effect of TMG addition on the epitaxial growth of 3C-SiC on Si(100) and Si(111) using hexamethyldisilane Materials Research Society Symposium - Proceedings. 640. DOI: 10.1557/Proc-640-H5.11 |
0.762 |
|
| 2001 |
Teker K, Lee KH, Jacob C, Nishino S, Pirouz P. Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE Materials Research Society Symposium - Proceedings. 640. DOI: 10.1557/Proc-640-H5.10 |
0.788 |
|
| 2001 |
Hong MH, Pirouz P, Chung J, Yoon SY, Demenet JL, Nishiguchi T, Nishino S. Deformation-induced dislocations in 15R-SiC grown by sublimation Philosophical Magazine Letters. 81: 823-831. DOI: 10.1080/09500830110089510 |
0.313 |
|
| 2001 |
Pirouz P, Demenet JL, Hong MH. On transition temperatures in the plasticity and fracture of semiconductors Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 81: 1207-1227. DOI: 10.1080/01418610108214437 |
0.37 |
|
| 2001 |
Okojie RS, Xhang M, Pirouz P, Tumakha S, Jessen G, Brillson LJ. Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation Applied Physics Letters. 79: 3056-3058. DOI: 10.1063/1.1415347 |
0.394 |
|
| 2001 |
Wu CH, Chung J, Hong MH, Zorman CA, Pirouz P, Mehregany M. Comparison of SiO2 and Si3N4 masks for selective epitaxial growth of 3C-SiC films on Si Materials Science Forum. 353: 171-174. |
0.373 |
|
| 2000 |
Mitchel WC, Brown J, Buckanan D, Bertke R, Malalingham K, Orazio FD, Pirouz P, Tseng HJR, Ramabadran UB, Roughani B. Comparison of mechanical and chemomechanical polished SiC wafers using Photon Backscattering Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.841 |
0.382 |
|
| 2000 |
Hong MH, Chung J, Namavar F, Pirouz P. Defect characterization in 3C-SiC films grown on thin and thick silicon top layers of SIMOX Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.525 |
0.471 |
|
| 2000 |
Demenet JL, Hong MH, Pirouz P. Deformation tests on 4H-SiC single crystals between 900 °C and 1360 °C and the microstructure of the deformed samples Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.517 |
0.429 |
|
| 2000 |
Jacob C, Hong MH, Chung J, Pirouz P, Nishino S. Selective epitaxial growth of silicon carbide on patterned silicon substrates using hexachlorodisilane and propane Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.249 |
0.451 |
|
| 2000 |
Hong MH, Pirouz P, Tavernier PM, Clarke DR. Dislocations produced by indentation deformation of HPVE GaN films Materials Research Society Symposium - Proceedings. 622. DOI: 10.1557/Proc-622-T6.18.1 |
0.468 |
|
| 2000 |
Lee KH, Hong MH, Teker K, Jacob C, Pirouz P. Comparison of different substrate pre-treatments on the quality of gan film growth on 6H-, 4H-, and 3C-SiC Materials Research Society Symposium - Proceedings. 622. DOI: 10.1557/Proc-622-T6.16.1 |
0.754 |
|
| 2000 |
Jacob C, Chung J, Hong MH, Pirouz P, Nishino S. Low temperature lateral epitaxial growth of silicon carbide on silicon Materials Research Society Symposium - Proceedings. 622. DOI: 10.1557/Proc-622-T4.1.1 |
0.665 |
|
| 2000 |
Pirouz P, Kubin LP, Demenet JL, Hong MH, Samant AV. Transition temperatures in plastic yielding and fracture of semiconductors Materials Research Society Symposium - Proceedings. 578: 205-216. DOI: 10.1557/Proc-578-205 |
0.383 |
|
| 2000 |
Hong MH, Samant AV, Pirouz P. Stacking fault energy of 6H-SiC and 4H-SiC single crystals Materials Science Forum. 338. DOI: 10.1080/01418610008212090 |
0.346 |
|
| 2000 |
Demenet JL, Hong MH, Pirouz P. Plastic behavior of 4H-SiC single crystals deformed at low strain rates Scripta Materialia. 43: 865-870. DOI: 10.1016/S1359-6462(00)00495-4 |
0.425 |
|
| 2000 |
Samant AV, Hong MH, Pirouz P. The relationship between activation parameters and dislocation glide in 4H-SiC single crystals Physica Status Solidi (B) Basic Research. 222: 75-93. DOI: 10.1002/1521-3951(200011)222:1<75::Aid-Pssb75>3.0.Co;2-0 |
0.41 |
|
| 1999 |
Hong MH, Samant AV, Orlov V, Farber B, Kisielowski C, Pirouz P. Deformation-induced dislocations in 4H-SiC and GaN Materials Research Society Symposium - Proceedings. 572: 369-375. DOI: 10.1557/Proc-572-369 |
0.465 |
|
| 1999 |
Kubin LP, Moulin A, Pirouz P. Dislocations and plasticity in silicon crystals by 3-D mesoscopic simulations Materials Research Society Symposium - Proceedings. 538: 3-14. DOI: 10.1557/Proc-538-3 |
0.394 |
|
| 1999 |
Pirouz P, Samant AV, Hong MH, Moulin A, Kubin LP. On temperature dependence of deformation mechanism and the brittle-ductile transition in semiconductors Journal of Materials Research. 14: 2783-2793. DOI: 10.1557/Jmr.1999.0372 |
0.388 |
|
| 1998 |
Ikuhara Y, Pirouz P. High resolution transmission electron microscopy studies of metal/ceramics interfaces. Microscopy Research and Technique. 40: 206-41. PMID 9518055 DOI: 10.1002/(Sici)1097-0029(19980201)40:3<206::Aid-Jemt4>3.0.Co;2-S |
0.434 |
|
| 1998 |
Pirouz P, Ernst F, Ikuhara Y. On epitaxy and orientation relationships in bicrystals Solid State Phenomena. 59: 51-62. DOI: 10.4028/Www.Scientific.Net/Ssp.59-60.51 |
0.436 |
|
| 1998 |
Samant AV, Zhou WL, Pirouz P. Deformation of monocrystalline 6H-SiC Materials Science Forum. 264: 627-630. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.627 |
0.419 |
|
| 1998 |
Zhou WL, Pirouz P, Powell JA. The origin of triangular surface defects in 4H-SiC CVD epilayers Materials Science Forum. 264: 417-420. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.417 |
0.416 |
|
| 1998 |
Pirouz P. Extended defects in SiC and GaN semiconductors Materials Science Forum. 264: 399-408. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.399 |
0.378 |
|
| 1998 |
Zhou WL, Pirouz P, Namavar F, Colter PC, Yoganathan M, Leksono MW, Pankove JI. Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition Materials Science Forum. 264: 1239-1242. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1239 |
0.5 |
|
| 1998 |
Pirouz P. The Origin of Nanopipes and Micropipes in Non-Cubic GaN and SiC Mrs Proceedings. 512. DOI: 10.1557/Proc-512-113 |
0.429 |
|
| 1998 |
Pirouz P. On micropipes and nanopipes in SiC and GaN Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 78: 727-736. DOI: 10.1080/01418619808241932 |
0.41 |
|
| 1998 |
Jacob C, Pirouz P, Kuo HI, Mehregany M. High temperature ohmic contacts to 3C-silicon carbide films Solid-State Electronics. 42: 2329-2334. DOI: 10.1016/S0038-1101(98)00234-2 |
0.439 |
|
| 1998 |
Samant AV, Zhou WL, Pirouz P. Effect of test temperature and strain rate on the yield stress of monocrystalline 6H-SiC Physica Status Solidi (a) Applied Research. 166: 155-169. DOI: 10.1002/(Sici)1521-396X(199803)166:1<155::Aid-Pssa155>3.0.Co;2-V |
0.379 |
|
| 1998 |
Samant AV, Wei XL, Pirouz P. An optical and transmission electron microscopy study of deformation-induced defects in 6H-SiC Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 78: 737-746. |
0.304 |
|
| 1998 |
Tillay V, Pailloux F, Denanot MF, Pirouz P, Rabier J, Demenet JL, Barbot JF. Dislocations in 6H-SiC and their influence on electrical properties of n-type crystals Epj Applied Physics. 2: 111-115. |
0.338 |
|
| 1997 |
Pirouz P. Polytypic transformations in SiC Solid State Phenomena. 56: 107-132. DOI: 10.4028/Www.Scientific.Net/Ssp.56.107 |
0.346 |
|
| 1997 |
Jacob C, Pirouz P, Kuo HI, Mehregany M. High temperature characterization of Ni, W and Al contacts to 3C-silicon carbide thin films Materials Research Society Symposium - Proceedings. 483: 321-326. DOI: 10.1557/Proc-483-321 |
0.427 |
|
| 1997 |
Zhou WL, Pirouz P, Namavar F, Colter PC, Yoganathan M, Leksono MW, Pankove JI. TEM study of interfaces and defects in MOCVD-grown GaN on SiC on SIMOX Materials Research Society Symposium - Proceedings. 482: 471-476. DOI: 10.1557/Proc-482-471 |
0.487 |
|
| 1997 |
Zhou L, Pirouz P, Powell JA. Defects in 4H silicon carbide CVD epilayers Materials Research Society Symposium - Proceedings. 442: 631-636. DOI: 10.1557/Proc-442-631 |
0.447 |
|
| 1997 |
Ning XJ, Huvey N, Pirouz P. Dislocation cores and hardness polarity of 4H-SiC Journal of the American Ceramic Society. 80: 1645-1652. DOI: 10.1111/J.1151-2916.1997.Tb03033.X |
0.426 |
|
| 1997 |
Zhou L, Audurier V, Pirouz P, Powell JA. Chemomechanical polishing of silicon carbide Journal of the Electrochemical Society. 144. |
0.311 |
|
| 1996 |
Stemmer S, Pirouz P, Ikuhara Y, Davis RF. Film/Substrate Orientation Relationship in the AlN/6H-SiC Epitaxial System. Physical Review Letters. 77: 1797-1800. PMID 10063174 DOI: 10.1103/Physrevlett.77.1797 |
0.46 |
|
| 1996 |
Namavar F, Colter P, Cremins-Costa A, Wu CH, Gagnon E, Perry D, Pirouz P. Growth of crystalline quality SiC on thin and thick silicon-on-insulator structures Materials Research Society Symposium - Proceedings. 423: 409-414. DOI: 10.1557/Proc-423-409 |
0.471 |
|
| 1996 |
Namavar F, Colter P, Gagnon E, Cremins-Costa A, Perry D, Pirouz P, Wu C. Growth of Crystalline Quality Sic on Thin and Thick Silicon-on-Insulator Structures Mrs Proceedings. 423. DOI: 10.1557/PROC-423-409 |
0.366 |
|
| 1996 |
Ning XJ, Pirouz P. A large angle convergent beam electron diffraction study of the core nature of dislocations in 3C-SiC Journal of Materials Research. 11: 884-894. DOI: 10.1557/Jmr.1996.0110 |
0.436 |
|
| 1996 |
Ning XJ, Chien FR, Pirouz P, Yang JW, Asif Khan M. Growth defects in GaN films on sapphire: The probable origin of threading dislocations Journal of Materials Research. 11: 580-592. DOI: 10.1557/Jmr.1996.0071 |
0.466 |
|
| 1996 |
Chien FR, Ning XJ, Stemmer S, Pirouz P, Bremser MD, Davis RF. Growth defects in GaN films on 6H-SiC substrates Applied Physics Letters. 68: 2678-2680. DOI: 10.1063/1.116279 |
0.483 |
|
| 1996 |
Ning XJ, Pirouz P. Formation of misfit dislocations with in-plane Burgers vectors in boron diffused (111) silicon Acta Materialia. 44: 2127-2143. DOI: 10.1016/1359-6454(95)00295-2 |
0.344 |
|
| 1996 |
Geipel T, Bilde-Sørensen JB, Lawlor BF, Pirouz P, Lagerlöf KPD, Heuer AH. On basal slip and basal twinning in sapphire (α-Al2O3) - III. HRTEM of the twin/matrix interface Acta Materialia. 44: 2165-2174. DOI: 10.1016/1359-6454(95)00288-X |
0.309 |
|
| 1996 |
Pirouz P, Lawlor BF, Geipel T, Bilde-Sørensen JB, Heuer AH, Lagerlöf KPD. On basal slip and basal twinning in sapphire (α-Al2O3) - II. A new model of basal twinning Acta Materialia. 44: 2153-2164. DOI: 10.1016/1359-6454(95)00265-0 |
0.327 |
|
| 1996 |
Wu CH, Jacob C, Ning XJ, Nishino S, Pirouz P. Epitaxial growth of 3C-SiC on Si(111) from hexamethyldisilane Journal of Crystal Growth. 158: 480-490. DOI: 10.1016/0022-0248(95)00464-5 |
0.679 |
|
| 1996 |
Stemmer S, Pirouz P, Ikuhara Y, Davis RF. Film/substrate orientation relationship in the AIN/6H-SiC epitaxial system Physical Review Letters. 77: 1797-1800. |
0.361 |
|
| 1995 |
Pirouz P, Garg A, Ning XJ, Yang JW, Xiao SQ. High-temperature indentation of natural diamond and the quest for Lonsdaleite Materials Research Society Symposium - Proceedings. 383: 73-83. DOI: 10.1557/Proc-383-73 |
0.455 |
|
| 1995 |
Pirouz P, Ikuhara Y, Flynn CP. Metallic thin films on ceramic substrates: stress-enhanced intermixing and spinel formation Materials Research Society Symposium - Proceedings. 356: 247-258. DOI: 10.1557/Proc-356-247 |
0.446 |
|
| 1995 |
Nordell N, Nishino S, Yang JW, Pirouz P, Jacob C. Influence of H2Addition and Growth Temperature on CVD of SiC Using Hexamethyldisilane and Ar Journal of the Electrochemical Society. 142: 565-571. DOI: 10.1149/1.2044099 |
0.489 |
|
| 1995 |
Ning XJ, Perezt T, Pirouz P. Indentation-induced dislocations and microtwins in GaSb and GaAs Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 72: 837-859. DOI: 10.1080/01418619508239938 |
0.393 |
|
| 1995 |
Ikuhara Y, Pirouz P, Yadavalli S, Flynn CP. Structure of V-MgO and MgO-V interfaces Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 72: 179-198. DOI: 10.1080/01418619508239589 |
0.407 |
|
| 1995 |
Zorman CA, Fleischman AJ, Dewa AS, Mehregany M, Jacob C, Nishino S, Pirouz P. Epitaxial growth of 3C-SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition Journal of Applied Physics. 78: 5136-5138. DOI: 10.1063/1.359745 |
0.698 |
|
| 1994 |
Stan MA, Patton MO, Vithana HKM, Johnson DL, Warner JD, Piltch ND, Yang J, Pirouz P. Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition Mrs Proceedings. 339. DOI: 10.1557/Proc-339-423 |
0.717 |
|
| 1994 |
Ning XJ, Pirouz P. Transition from inclined to in-plane 60° misfit dislocations in a diffuse interface Materials Research Society Symposium - Proceedings. 319: 441-456. DOI: 10.1557/Proc-319-441 |
0.398 |
|
| 1994 |
Argoitia A, Angus J, Ma J, Wang L, Pirouz P, Lambrecht WRL. Heteroepitaxy of diamond on c-BN: Growth mechanisms and defect characterization Journal of Materials Research. 9: 1849-1865. DOI: 10.1557/Jmr.1994.1849 |
0.491 |
|
| 1994 |
Ikuhara Y, Pirouz P, Heuer AH, Yadavalli S, Flynn CP. Structure of V-Al2, O3 interfaces grown by molecular beam epitaxy Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 70: 75-97. DOI: 10.1080/01418619408242539 |
0.417 |
|
| 1994 |
Nordell N, Nishino S, Yang JW, Jacob C, Pirouz P. Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient Applied Physics Letters. 64: 1647-1649. DOI: 10.1063/1.111819 |
0.497 |
|
| 1994 |
Geipel T, Lagerlöf KPD, Pirouz P, Heuer AH. A zonal dislocation mechanism for rhombohedral twinning in sapphire (α-Al2O3) Acta Metallurgica Et Materialia. 42: 1367-1372. DOI: 10.1016/0956-7151(94)90154-6 |
0.302 |
|
| 1993 |
Yang JW, Pirouz P. Theα —β polytypic transformation in high-temperature indented SiC Journal of Materials Research. 8: 2902-2907. DOI: 10.1557/Jmr.1993.2902 |
0.379 |
|
| 1993 |
Ning X, Pirouz P, Farmer SC. Microchemical Analysis of the SCS-6 Silicon Carbide Fiber Journal of the American Ceramic Society. 76: 2033-2041. DOI: 10.1111/J.1151-2916.1993.Tb08329.X |
0.365 |
|
| 1993 |
Holmes D, Heuer AH, Pirouz P. Dislocation structures around vickers indents in 9·4 mol% Y2O3-stabilized cubic ZrO2 single crystals Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 67: 325-342. DOI: 10.1080/01418619308207161 |
0.364 |
|
| 1993 |
Li Z, Wang L, Suzuki T, Argoitia A, Pirouz P, Angus JC. Orientation relationship between chemical vapor deposited diamond and graphite substrates Journal of Applied Physics. 73: 711-715. DOI: 10.1063/1.353327 |
0.414 |
|
| 1993 |
Argoitia A, Angus JC, Wang L, Ning XI, Pirouz P. Diamond grown on single-crystal beryllium oxide Journal of Applied Physics. 73: 4305-4312. DOI: 10.1063/1.352813 |
0.424 |
|
| 1993 |
Wang L, Pirouz P, Argoitia A, Ma JS, Angus JC. Heteroepitaxially grown diamond on a c-BN {111} surface Applied Physics Letters. 63: 1336-1338. DOI: 10.1063/1.109723 |
0.461 |
|
| 1993 |
Li JP, Steckl AJ, Golecki I, Reidinger F, Wang L, Ning XJ, Pirouz P. Structural characterization of nanometer SiC films grown on Si Applied Physics Letters. 62: 3135-3137. DOI: 10.1063/1.109106 |
0.388 |
|
| 1993 |
Pirouz P, Yang JW. Polytypic transformations in SiC: the role of TEM Ultramicroscopy. 51: 189-214. DOI: 10.1016/0304-3991(93)90146-O |
0.367 |
|
| 1993 |
Ikuhara Y, Pirouz P. A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire Ultramicroscopy. 52: 421-428. DOI: 10.1016/0304-3991(93)90056-4 |
0.405 |
|
| 1992 |
Yang JW, Suzuki T, Pirouz P, Powell JA, Iseki T. Stress-Induced Polytypic Transformation in Sic Mrs Proceedings. 242. DOI: 10.1557/Proc-242-531 |
0.349 |
|
| 1992 |
Li DX, Pirouz P, Heuer AH, Yadavalli S, Flynn CP. A high-resolution electron microscopy study of MgO/Al2O3 interfaces and MgAl2O4 spinel formation Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 65: 403-425. DOI: 10.1080/01418619208201530 |
0.44 |
|
| 1992 |
Li DX, Pirouz P, Heuer AH, Yadavalli S, Flynn CP. The characterization of NbAl2O3 and NbMgO interfaces in MBE grown NbMgONbAl2O3 multilayers Acta Metallurgica Et Materialia. 40. DOI: 10.1016/0956-7151(92)90282-J |
0.435 |
|
| 1992 |
Ernst F, Pirouz P, Bauser E. Lattice mismatch accommodation atGeSi/{111}Si interfaces grown by liquid phase epitaxy Physica Status Solidi (a). 131: 651-662. DOI: 10.1002/Pssa.2211310235 |
0.408 |
|
| 1991 |
Li DX, Pirouz P, Heuer AH, Yadavalli S, Flynn CP. Interface Characterization in a Nb/MgO/Nb/Al2O3 Multilayer Mrs Proceedings. 221. DOI: 10.1557/Proc-221-93 |
0.323 |
|
| 1991 |
Li DX, Pirouz P, Heuer AH, Yadavalli S, Flynn CP. Hrem Study of A Ceramic/Ceramic Interface: MgO/A12O3 Mrs Proceedings. 221. DOI: 10.1557/Proc-221-331 |
0.413 |
|
| 1991 |
Ning XJ, Pirouz P. The microstructure of SCS-6 SiC fiber Journal of Materials Research. 6: 2234-2248. DOI: 10.1557/Jmr.1991.2234 |
0.336 |
|
| 1991 |
Morscher GN, Pirouz P, Heuer AH. Temperature Dependence of Hardness in Yttria‐Stabilized Zirconia Single Crystals Journal of the American Ceramic Society. 74: 491-500. DOI: 10.1111/J.1151-2916.1991.Tb04049.X |
0.356 |
|
| 1991 |
Ernst F, Pirouz P, Heuer AH. HRTEM study of a Cu/Al2O3 interface Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 63: 259-277. DOI: 10.1080/01418619108204849 |
0.327 |
|
| 1991 |
Powell JA, Petit JB, Edgar JH, Jenkins IG, Matus LG, Choyke WJ, Clemen L, Yoganathan M, Yang JW, Pirouz P. Application of oxidation to the structural characterization of SiC epitaxial films Applied Physics Letters. 59: 183-185. DOI: 10.1063/1.105960 |
0.402 |
|
| 1991 |
Powell JA, Petit JB, Edgar JH, Jenkins IG, Matus LG, Yang JW, Pirouz P, Choyke WJ, Clemen L, Yoganathan M. Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers Applied Physics Letters. 59: 333-335. DOI: 10.1063/1.105587 |
0.473 |
|
| 1990 |
Morscher G, Pirouz P, Heuer AH. Temperature Dependence of Interfacial Shear Strength in SiC‐Fiber‐Reinforced Reaction‐Bonded Silicon Nitride Journal of the American Ceramic Society. 73: 713-720. DOI: 10.1111/J.1151-2916.1990.Tb06577.X |
0.308 |
|
| 1990 |
Powell JA, Larkin DJ, Matus LG, Choyke WJ, Bradshaw JL, Henderson L, Yoganathan M, Yang J, Pirouz P. Growth of improved quality 3C-SiC films on 6H-SiC substrates Applied Physics Letters. 56: 1353-1355. DOI: 10.1063/1.102512 |
0.484 |
|
| 1990 |
Powell JA, Larkin DJ, Matus LG, Choyke WJ, Bradshaw JL, Henderson L, Yoganathan M, Yang J, Pirouz P. Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers Applied Physics Letters. 56: 1442-1444. DOI: 10.1063/1.102492 |
0.49 |
|
| 1990 |
Pirouz P, Dahmen U, Westmacott KH, Chaim R. The martensitic transformation in silicon-III. comparison with other work Acta Metallurgica Et Materialia. 38: 329-336. DOI: 10.1016/0956-7151(90)90063-M |
0.333 |
|
| 1990 |
Dahmen U, Westmacott KH, Pirouz P, Chaim R. The martensitic transformation in silicon-II. crystallographic analysis Acta Metallurgica Et Materialia. 38: 323-328. DOI: 10.1016/0956-7151(90)90062-L |
0.377 |
|
| 1990 |
Pirouz P, Chaim R, Dahmen U, Westmacott KH. The martensitic transformation in silicon-I experimental observations Acta Metallurgica Et Materialia. 38: 313-322. DOI: 10.1016/0956-7151(90)90061-K |
0.405 |
|
| 1989 |
Aindow M, Cheng TT, Pirouz P. The Formation of Helical Dislocations in Silicon Substrates During Epitaxial Deposition of β- SiC Mrs Proceedings. 162. DOI: 10.1557/Proc-162-445 |
0.452 |
|
| 1989 |
Ernst F, Pirouz P. The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates Journal of Materials Research. 4: 834-842. DOI: 10.1557/Jmr.1989.0834 |
0.474 |
|
| 1989 |
Choyke WJ, Powell JA, Cheng TT, Pirouz P. Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si Materials Science Forum. 126-126. DOI: 10.1007/978-3-642-75048-9_25 |
0.496 |
|
| 1988 |
Cheng TT, Pirouz P, Ernst F. Inversion Domain Boundary Dislocations in Heteroepitaxial Films Mrs Proceedings. 144. DOI: 10.1557/Proc-144-189 |
0.336 |
|
| 1988 |
Ernst F, Pirouz P, Heuer AH. High Resolution Electron Microscopy of an Alumina/Copper Interface Mrs Proceedings. 138. DOI: 10.1557/Proc-138-557 |
0.319 |
|
| 1988 |
Lambrecht WRL, Segall B, Pirouz P. Substrate Step Induced Strain in Heteroepitaxial Growth Mrs Proceedings. 130. DOI: 10.1557/Proc-130-199 |
0.414 |
|
| 1988 |
Farmer SC, Pirouz P, Heuer AH. Microstructural characterization of a SiC Whisker-Reinforced HIPped Reaction-Bonded Si3N4 Mrs Proceedings. 120. DOI: 10.1557/Proc-120-169 |
0.367 |
|
| 1988 |
Pirouz P, Ernst F, Cheng TT. Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation. Mrs Proceedings. 116. DOI: 10.1557/Proc-116-57 |
0.515 |
|
| 1988 |
Ernst F, Pirouz P. Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor deposition Journal of Applied Physics. 64: 4526-4530. DOI: 10.1063/1.341280 |
0.4 |
|
| 1987 |
Pirouz P, Chaim R, Dahmen U. Hexagonal Silicon, a Stress-Induced Martesitic Transformation Mrs Proceedings. 104. DOI: 10.1557/Proc-104-133 |
0.337 |
|
| 1987 |
Powell JA, Matus LG, Kuczmarski MA, Chorey CM, Cheng TT, Pirouz P. Improved β-SiC heteroepitaxial films using off-axis Si substrates Applied Physics Letters. 51: 823-825. DOI: 10.1063/1.98824 |
0.463 |
|
| 1972 |
Boswarva IM, Pirouz P. The computer simulation of the geometry of electron channelling patterns Journal of Physics C: Solid State Physics. 5: 2117-2128. DOI: 10.1088/0022-3719/5/16/013 |
0.728 |
|
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