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Lianghong Liu, Ph.D. - Publications

Affiliations: 
2002 Kansas State University, Manhattan, KS, United States 
Area:
Chemical Engineering, Materials Science Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Zhuang D, Edgar JH, Liu L, Liu B, Walker L. Wet chemical etching of AlN single crystals Mrs Internet Journal of Nitride Semiconductor Research. 7. DOI: 10.1557/S1092578300000302  0.573
2002 Liu L, Edgar JH. A global growth rate model for aluminum nitride sublimation Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1421349  0.541
2002 Liu L, Liu B, Edgar JH, Rajasingam S, Kuball M. Raman characterization and stress analysis of AlN grown on SiC by sublimation Journal of Applied Physics. 92: 5183-5188. DOI: 10.1063/1.1506195  0.591
2002 Edgar JH, Liu L, Liu B, Zhuang D, Chaudhuri J, Kuball M, Rajasingam S. Bulk AlN crystal growth: Self-seeding and seeding on 6H-SiC substrates Journal of Crystal Growth. 246: 187-193. DOI: 10.1016/S0022-0248(02)01741-4  0.647
2001 Liu L, Liu B, Shi Y, Edgar JH. Growth mode and defects in aluminum nitride sublimated on (0001) 6H-SiC substrates Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/S1092578300000193  0.622
2001 Shi Y, Liu B, Liu L, Edgar JH, Payzant EA, Hayes JM, Kuball M. New technique for sublimation growth of AlN single crystals Mrs Internet Journal of Nitride Semiconductor Research. 6. DOI: 10.1557/S109257830000017X  0.605
2001 Liu B, Shi Y, Liu L, Edgar JH, Braski DN. Surface morphology and composition characterization at the initial stages of AlN crystal growth Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/Proc-639-G3.13  0.641
2001 Shi Y, Xie ZY, Liu LH, Liu B, Edgar JH, Kuball M. Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique Journal of Crystal Growth. 233: 177-186. DOI: 10.1016/S0022-0248(01)01560-3  0.635
2001 Liu L, Zhuang D, Liu B, Shi Y, Edgar J, Rajasingam S, Kuball M. Characterization of Aluminum Nitride Crystals Grown by Sublimation Physica Status Solidi (a). 188: 769-774. DOI: 10.1002/1521-396X(200112)188:2<769::Aid-Pssa769>3.0.Co;2-G  0.631
2001 Shi Y, Liu B, Liu L, Edgar JH, Meyer HM, Payzant EA, Walker LR, Evans ND, Swadener JG, Chaudhuri J. Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 757-762. DOI: 10.1002/1521-396X(200112)188:2<757::Aid-Pssa757>3.0.Co;2-S  0.608
2000 Edgar JH, Robins LH, Coatney SE, Liu L, Chaudhuri J, Ignatiev K, Rek Z. Comparison of aluminum nitride freely nucleated and seeded on 6H-silicon carbide Materials Science Forum. 338: II/-. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1599  0.613
2000 Liu L, Edgar JH. Transport effects in the sublimation growth of aluminum nitride Journal of Crystal Growth. 220: 243-253. DOI: 10.1016/S0022-0248(00)00841-1  0.565
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