| Year |
Citation |
Score |
| 2016 |
Chung HE, Ye W, Vora SG, Rednour S, Allee DR. A Passive Very Low-Frequency (VLF) Electric Field Imager Ieee Sensors Journal. 16: 3181-3187. DOI: 10.1109/Jsen.2016.2530741 |
0.364 |
|
| 2016 |
Smith L, Murphy JW, Kim J, Rozhdestvenskyy S, Mejia I, Park H, Allee DR, Quevedo-Lopez M, Gnade B. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 838: 117-123. DOI: 10.1016/J.Nima.2016.09.026 |
0.378 |
|
| 2014 |
Smith JT, Shah SS, Goryll M, Stowell JR, Allee DR. Flexible ISFET biosensor using IGZO metal oxide TFTs and an ITO sensing layer Ieee Sensors Journal. 14: 937-938. DOI: 10.1109/Jsen.2013.2295057 |
0.374 |
|
| 2014 |
Murphy JW, Smith L, Calkins J, Kunnen GR, Mejia I, Cantley KD, Chapman RA, Sastré-Hernández J, Mendoza-Pérez R, Contreras-Puente G, Allee DR, Quevedo-Lopez M, Gnade B. Thin film cadmium telluride charged particle sensors for large area neutron detectors Applied Physics Letters. 105. DOI: 10.1063/1.4895925 |
0.787 |
|
| 2014 |
Kunnen G, Smith J, Chung H, Allee D. TFT-based, multi-stage, active pixel sensor for alpha particle detection Electronics Letters. 50: 705-706. DOI: 10.1049/El.2014.0259 |
0.783 |
|
| 2014 |
Smith J, Couture A, Allee D. Charge emission induced transient leakage currents of a-Si:H and IGZO TFTs on flexible plastic substrates Electronics Letters. 50: 105-106. DOI: 10.1049/El.2013.3795 |
0.488 |
|
| 2013 |
Smith J, Marrs M, Strnad M, Apte RB, Bert J, Allee D, Colaneri N, Forsythe E, Morton D. Flexible digital x-ray technology for far-forward remote diagnostic and conformal x-ray imaging applications Proceedings of Spie. 8730. DOI: 10.1117/12.2016102 |
0.314 |
|
| 2013 |
Mejia I, Salas-Villasenor AL, Murphy JW, Kunnen GR, Cantley KD, Allee DR, Gnade BE, Quevedo-Lopez MA. High-performance logic circuits using solution-based, low-temperature semiconductors for flexible electronics Proceedings of Spie - the International Society For Optical Engineering. 8730. DOI: 10.1117/12.2015996 |
0.803 |
|
| 2013 |
Murphy JW, Eddy A, Kunnen GR, Mejia I, Cantley KD, Allee DR, Quevedo-Lopez MA, Gnade BE. Sol gel ZnO films doped with Mg and Li evaluated for charged particle detectors Proceedings of Spie - the International Society For Optical Engineering. 8730. DOI: 10.1117/12.2015856 |
0.781 |
|
| 2013 |
Dominguez A, Kunnen G, Vetrano M, Smith J, Marrs M, Allee DR. Development of a testbed for flexible a-Si:H photodiode sensing arrays Proceedings of Spie - the International Society For Optical Engineering. 8730. DOI: 10.1117/12.2015499 |
0.786 |
|
| 2013 |
Wahl RE, Wang F, Chung HE, Kunnen GR, Yip S, Lee EH, Pun EYB, Raupp GB, Allee DR, Ho JC. Stability and low-frequency noise in InAs NW parallel-array thin-film transistors Ieee Electron Device Letters. 34: 765-767. DOI: 10.1109/Led.2013.2250896 |
0.805 |
|
| 2012 |
Lee EH, Kunnen GR, Dominguez A, Allee DR. A low-noise dual-stage a-Si:H active pixel sensor Ieee Transactions On Electron Devices. 59: 1679-1685. DOI: 10.1109/Ted.2012.2189403 |
0.78 |
|
| 2012 |
Kunnen GR, Pressler D, Lee EH, Allee DR, Murphy JW, Mejia I, Quevedo M, Gnade B. Large area sensing arrays for detection of thermal neutrons Ieee Nuclear Science Symposium Conference Record. 156-161. DOI: 10.1109/NSSMIC.2012.6551083 |
0.752 |
|
| 2012 |
Kim S, Zhang X, Daugherty R, Lee E, Kunnen G, Allee DR, Forsythe E, Chae J. Ultrasonic electrostatic actuators on a flexible substrate Proceedings of the Ieee International Conference On Micro Electro Mechanical Systems (Mems). 1193-1196. DOI: 10.1109/MEMSYS.2012.6170377 |
0.768 |
|
| 2012 |
Kim S, Zhang X, Daugherty R, Lee E, Kunnen G, Allee DR, Forsythe E, Chae J. Microelectromechanical systems (MEMS) based-ultrasonic electrostatic actuators on a flexible substrate Ieee Electron Device Letters. 33: 1072-1074. DOI: 10.1109/Led.2012.2195630 |
0.796 |
|
| 2012 |
Dey A, Allee DR. Amorphous silicon 5 bit flash analog to digital converter Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330647 |
0.598 |
|
| 2012 |
Murphy JW, Kunnen GR, Mejia I, Quevedo-Lopez MA, Allee D, Gnade B. Optimizing diode thickness for thin-film solid state thermal neutron detectors Applied Physics Letters. 101. DOI: 10.1063/1.4757292 |
0.79 |
|
| 2012 |
Kim S, Zhang X, Daugherty R, Lee E, Kunnen G, Allee DR, Forsythe E, Chae J. Design and implementation of electrostatic micro-actuators in ultrasonic frequency on a flexible substrate, PEN (polyethylene naphthalate) Sensors and Actuators, a: Physical. DOI: 10.1016/J.Sna.2012.10.010 |
0.794 |
|
| 2011 |
Marrs MA, Venugopal SM, Moyer CD, Bawolek EJ, Bottesch D, O'Brien BP, Cordova RJ, Trujillo J, Bell CS, Loy DE, Raupp GB, Allee DR. Low temperature zinc indium oxide backplane development for flexible OLED displays in a manufacturing pilot line environment Materials Research Society Symposium Proceedings. 1287: 19-24. DOI: 10.1557/Opl.2011.1145 |
0.448 |
|
| 2011 |
Dey A, Avendanno A, Venugopal S, Allee DR, Quevedo M, Gnade B. CMOS TFT Op-Amps: Performance and Limitations Ieee Electron Device Letters. DOI: 10.1109/Led.2011.2121891 |
0.662 |
|
| 2011 |
Lee EH, Indluru A, Allee DR, Clark LT, Holbert KE, Alford TL. Effects of gamma irradiation and electrical stress on a-Si:H thin-film transistors for flexible electronics and displays Ieee/Osa Journal of Display Technology. 7: 325-329. DOI: 10.1109/Jdt.2011.2113314 |
0.45 |
|
| 2011 |
Kaftanoglu K, Venugopal SM, Marrs M, Dey A, Bawolek EJ, Allee DR, Loy D. Stability of IZO and a-Si:H TFTs processed at low temperature (200 °c) Ieee/Osa Journal of Display Technology. 7: 339-343. DOI: 10.1109/Jdt.2011.2107879 |
0.797 |
|
| 2011 |
Indluru A, Venugopal SM, Allee DR, Alford TL. Effect of anneal time on the enhanced performance of a-Si:H TFTs for future display technology Ieee/Osa Journal of Display Technology. 7: 306-310. DOI: 10.1109/Jdt.2010.2063695 |
0.477 |
|
| 2011 |
Dey A, Allee DR. Stability improvement of a-ZIO TFT circuits using low temperature anneal Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2011.5784601 |
0.34 |
|
| 2011 |
Dey A, Allee DR. Amorphous silicon current steering digital to analog converter Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2011.6055407 |
0.606 |
|
| 2011 |
Dey A, Allee DR, Clark LT. Impact of drain bias stress on forward/reverse mode operation of amorphous ZIO TFTs Solid-State Electronics. 62: 19-24. DOI: 10.1016/J.Sse.2011.04.011 |
0.558 |
|
| 2011 |
Vogt BD, O'Brien B, Allee DR, Loy D, Akgun B, Satija SK. Distribution of hydrogen in low temperature passivated amorphous silicon (a-Si:H) films from neutron reflectivity Journal of Non-Crystalline Solids. 357: 1114-1117. DOI: 10.1016/J.Jnoncrysol.2010.11.030 |
0.405 |
|
| 2010 |
Darbanian N, Venugopal SM, Gopalan SG, Allee DR, Clark LT. Flexible amorphous-silicon non-volatile memory Journal of the Society For Information Display. 18: 346-350. DOI: 10.1889/Jsid18.5.346 |
0.441 |
|
| 2010 |
Indluru A, Venugopal SM, Allee DR, Alford TL. Threshold voltage shift variation of a-Si:H TFTs with anneal time Materials Research Society Symposium Proceedings. 1245: 403-408. DOI: 10.1557/Proc-1245-A19-02 |
0.484 |
|
| 2010 |
Dey A, Indluru A, Venugopal SM, Allee DR, Alford TL. Effect of mechanical and electromechanical stress on a-ZIO TFTs Ieee Electron Device Letters. 31: 1416-1418. DOI: 10.1109/Led.2010.2080350 |
0.532 |
|
| 2010 |
Dey A, Song H, Ahmed T, Venugopal SM, Allee DR. Amorphous silicon 7 bit digital to analog converter on PEN Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2010.5617385 |
0.418 |
|
| 2010 |
Venugopal SM, Marrs M, Allee DR. P-21: Integrated source drivers for electrophoretic displays using low temperature IZO TFTs Digest of Technical Papers - Sid International Symposium. 41: 1301-1303. |
0.361 |
|
| 2009 |
Cai J, Cizek K, Long B, McAferty K, Campbell CG, Allee DR, Vogt BD, La Belle J, Wang J. Flexible Thick-Film Electrochemical Sensors: Impact of Mechanical Bending and Stress on the Electrochemical Behavior. Sensors and Actuators. B, Chemical. 137: 379-385. PMID 20160861 DOI: 10.1016/J.Snb.2008.10.027 |
0.324 |
|
| 2009 |
Quevedo-Lopez MA, Gowrisanker S, Allee DR, Venugopal S, Krishna R, Kaftanoglu K, Alshareef HN, Gnade BE. Novel materials and integration schemes for CMOS-based circuits for flexible electronics Ecs Transactions. 25: 503-511. DOI: 10.1149/1.3203989 |
0.783 |
|
| 2009 |
Allee DR, Clark LT, Vogt BD, Shringarpure R, Venugopal SM, Uppili SG, Kaftanoglu K, Shivalingaiah H, Li ZP, Fernando JJR, Bawolek EJ, O'Rourke SM. Circuit-level impact of a-Si:H thin-film-transistor degradation effects Ieee Transactions On Electron Devices. 56: 1166-1176. DOI: 10.1109/Ted.2009.2019387 |
0.81 |
|
| 2009 |
Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade B, Venugopal S, Krishna R, Kaftanoglu K, Allee D. Low temperature integration of hybrid CMOS devices on plastic substrates 2009 Flexible Electronics and Displays Conference and Exhibition, Flex 2009. DOI: 10.1109/FEDC.2009.5069280 |
0.811 |
|
| 2009 |
Uppili SG, Allee DR, Venugopal SM, Clark LT, Shringarpure R. Standard cell library and automated design flow for circuits on flexible substrates 2009 Flexible Electronics and Displays Conference and Exhibition, Flex 2009. DOI: 10.1109/FEDC.2009.5069270 |
0.358 |
|
| 2009 |
Gowrisanker S, Quevedo-Lopez MA, Alshareef HN, Gnade BE, Venugopal S, Krishna R, Kaftanoglu K, Allee DR. A novel low temperature integration of hybrid CMOS devices on flexible substrates Organic Electronics: Physics, Materials, Applications. 10: 1217-1222. DOI: 10.1016/J.Orgel.2009.06.012 |
0.803 |
|
| 2008 |
Shringarpure R, Venugopal S, Kaftanoglu K, Clark LT, Allee DR, Bawolek E. Compact modeling of amorphous-silicon thin-film transistors with BSIM3 Journal of the Society For Information Display. 16: 1147-1155. DOI: 10.1889/Jsid16.11.1147 |
0.789 |
|
| 2008 |
O'Rourke SM, Loy DE, Moyer C, Ageno SK, O'Brien BP, Bawolek EJ, Bottesch D, Marrs M, Dailey J, Cordova R, Trujillo J, Kaminski J, Allee DR, Venugopal S, Raupp GB. Principal pilot line manufacturing challenges and solutions in direct fabrication of a-Si:H TFT arrays on flexible substrates Materials Research Society Symposium Proceedings. 1030: 73-81. DOI: 10.1557/Proc-1030-G07-05 |
0.428 |
|
| 2008 |
O'Rourke SM, Loy DE, Moyer C, Bawolek EJ, Ageno SK, O'Brien BP, Marrs M, Bottesch D, Dailey J, Naujokaitas R, Kaminski JP, Allee DR, Venugopal SM, Haq J, Raupp GB. Direct fabrication of a-Si:H thin film transistor arrays on flexible substrates: Critical challenges and enabling solutions Ecs Transactions. 16: 49-54. DOI: 10.1149/1.2980530 |
0.337 |
|
| 2008 |
Allee DR, Clark LT, Shringarpure R, Venugopal SM, Li ZP, Bawolek EJ. Degradation effects in a-si:h thin film transistors and their impact on circuit performance Ieee International Reliability Physics Symposium Proceedings. 158-167. DOI: 10.1109/RELPHY.2008.4558878 |
0.431 |
|
| 2008 |
Shringarpure R, Venugopal S, Clark LT, Allee DR, Bawolek E. Localization of gate bias induced threshold voltage degradation in a-Si:H TFTs Ieee Electron Device Letters. 29: 93-95. DOI: 10.1109/Led.2007.911609 |
0.474 |
|
| 2008 |
Venugopal SM, Shringarpure R, Allee DR, O'Rourke SM. Integrated a-Si:H source drivers for electrophoretic displays on flexible plastic substrates Proceedings of the Academic Track of the 2008 Flexible Electronics and Displays - Conference and Exhibition, Flex. DOI: 10.1109/FEDC.2008.4483875 |
0.351 |
|
| 2008 |
Shringarpure R, Clark LT, Venugopal SM, Allee DR, Uppili SG. Amorphous silicon logic circuits on flexible substrates Proceedings of the Custom Integrated Circuits Conference. 181-184. DOI: 10.1109/CICC.2008.4672053 |
0.408 |
|
| 2008 |
O'Rourke SM, Loy DE, Moyer C, Bawolek EJ, Ageno SK, O'Brien BP, Marrs M, Bottesch D, Dailey J, Naujokaitis R, Kaminski JP, Allee DR, Venugopal SM, Haq J, Colaneri N, et al. Direct fabrication of a-Si:H thin film transistor arrays on flexible substrates: Critical challenges and enabling solutions Proceedings of International Meeting On Information Display. 8: 1459-1462. |
0.361 |
|
| 2008 |
O'Rourke SM, Venugopal SM, Raupp GB, Allee DR, Ageno S, Bawolek EJ, Loy DE, Kaminski JP, Moyer C, O'Brien B, Long K, Marrs M, Bottesch D, Dailey J, Trujillo J, et al. Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si:H TFTs Digest of Technical Papers - Sid International Symposium. 39: 422-424. |
0.348 |
|
| 2008 |
O'Rourke SM, Loy DE, Moyer C, Bawolek EJ, Ageno SK, O'Brien BP, Marrs M, Bottesch D, Dailey J, Naujokaitis R, Kaminski JP, Allee DR, Venugopal SM, Haq J, Colaneri N, et al. Direct fabrication of a-Si:H thin film transistor arrays on flexible substrates for low power flexible displays Sid Conference Record of the International Display Research Conference. 122-125. |
0.378 |
|
| 2008 |
Allee DR, Venugopal SM, Shringarpure R, Kaftanoglu K, Uppili SG, Clark LT, Vogt B, Bawolek EJ. Threshold voltage instability in a-Si:H TFTs and the implications for flexible displays and circuits Proceedings of International Meeting On Information Display. 8: 1297-1300. |
0.795 |
|
| 2007 |
Raupp GB, O'Rourke SM, Moyer C, O'Brien BP, Ageno SK, Loy DE, Bawolek EJ, Allee DR, Venugopal SM, Kaminski J, Bottesch D, Dailey J, Long K, Marrs M, Munizza NR, et al. Low-temperature amorphous-silicon backplane technology development for flexible displays in a manufacturing pilot-line environment Journal of the Society For Information Display. 15: 445-454. DOI: 10.1889/1.2759549 |
0.409 |
|
| 2007 |
Li Z, Venugopal S, Shringarpure R, Allee DR, Clark LT. Noise-margin analysis of a-Si:H digital circuits Journal of the Society For Information Display. 15: 251-259. DOI: 10.1889/1.2723882 |
0.474 |
|
| 2007 |
Hindman ND, Wang Z, Clark LT, Allee DR. Experimentally measured input referred voltage offsets and kickback noise in RHBD analog comparator arrays Ieee Transactions On Nuclear Science. 54: 2073-2079. DOI: 10.1109/Tns.2007.908654 |
0.404 |
|
| 2007 |
Shringarpure R, Venugopal S, Li Z, Clark LT, Allee DR, Bawolek E, Toy D. Circuit simulation of threshold-voltage degradation in a-Si:H TFTs fabricated at 175 °C Ieee Transactions On Electron Devices. 54: 1781-1783. DOI: 10.1109/Ted.2007.899667 |
0.494 |
|
| 2007 |
Kattamis AZ, Cheng IC, Long K, Hekmatshoar B, Cherenack KH, Wagner S, Sturm JC, Venugopal SM, Loy DE, O'Rourke SM, Allee DR. Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays Ieee/Osa Journal of Display Technology. 3: 304-308. DOI: 10.1109/Jdt.2007.900935 |
0.502 |
|
| 2007 |
Venugopal SM, Allee DR. Integrated a-Si:H source drivers for 4″ QVGA electrophoretic display on flexible stainless steel substrate Ieee/Osa Journal of Display Technology. 3: 57-63. DOI: 10.1109/Jdt.2006.890712 |
0.424 |
|
| 2007 |
Raupp GB, O'Rourke SM, Loy DE, Moyer C, Ageno SK, O'Brien BP, Bottesch D, Bawolek EJ, Marrs M, Dailey J, Kaminski J, Allee DR, Venugopal SM, Cordova R. Direct fabrication of a-Si:H TFT arrays on flexible substrates for high information content flexible displays: Challenges and solutions Idmc 2007 - International Display Manufacturing Conference and Fpd Expo - Proceedings. 345-348. |
0.312 |
|
| 2007 |
O'Rourke SM, Loy DE, Moyer C, Ageno SK, O'Brien BP, Bottesch D, Marrs M, Dailey J, Bawolek EJ, Trujillo J, Kaminski J, Allee DR, Venugopal SM, Cordova R, Colaneri N, et al. Principal pilot line manufacturing challenges and solutions in direct fabrication of a-Si:H TFT arrays on flexible substrates Society For Information Display - 10th Asian Symposium On Information Display 2007, Asid'07. 424-428. |
0.319 |
|
| 2006 |
Venugopal SM, Allee DR, Li Z, Clark LT. Threshold-voltage recovery of a-Si:H digital circuits Journal of the Society For Information Display. 14: 1053-1057. DOI: 10.1889/1.2393030 |
0.49 |
|
| 2006 |
Zi Li SV, Shringarpure R, Allee DR, Clark LT. Late-news poster: An analytical lifetime model for digital a-Si:H circuits Digest of Technical Papers - Sid International Symposium. 37: 270-273. |
0.353 |
|
| 2005 |
Wissmiller KR, Knudsen JE, Alward TJ, Li ZP, Allee DR, Clark LT. Reducing power in flexible a-Si digital circuits while preserving state Proceedings of the Custom Integrated Circuits Conference. 2005: 216-219. DOI: 10.1109/CICC.2005.1568646 |
0.31 |
|
| 2004 |
Islam MM, Allee DR, Konasani S, Rodriguez AA. A low-cost digital controller for a switching DC converter with improved voltage regulation Ieee Power Electronics Letters. 2: 121-124. DOI: 10.1109/Lpel.2004.840256 |
0.306 |
|
| 2002 |
Kim HC, Alford TL, Allee DR. Thickness dependence on the thermal stability of silver thin films Applied Physics Letters. 81: 4287-4289. DOI: 10.1063/1.1525070 |
0.352 |
|
| 1997 |
Wheeler C, Daryanani S, Mathine DL, Maracas GN, Allee DR. Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer Ieee Photonics Technology Letters. 9: 194-196. DOI: 10.1109/68.553089 |
0.354 |
|
| 1997 |
Wheeler CB, Mathine DL, Johnson SR, Maracas GN, Allee DR. Selectively oxidized GaAs MESFET's transferred to a Si substrate Ieee Electron Device Letters. 18: 138-140. DOI: 10.1109/55.563308 |
0.383 |
|
| 1996 |
Day HC, Allee DR. Selective area oxidation of Si3N4 with an ambient scanning tunneling microscope Nanotechnology. 7: 106-109. DOI: 10.1088/0957-4484/7/2/002 |
0.38 |
|
| 1995 |
Xu LS, Allee DR. Ambient scanning tunneling lithography of Langmuir–Blodgett and self‐assembled monolayers Journal of Vacuum Science & Technology B. 13: 2837-2840. DOI: 10.1116/1.588300 |
0.373 |
|
| 1993 |
Hove MV, Zou G, Raedt WD, Jansen P, Jonckheere R, Rossum MV, Hoole ACF, Allee DR, Broers AN, Crozat P, Jin Y, Aniel F, Adde R. Scaling behavior of delta‐doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source‐drain gaps down to 230 nm Journal of Vacuum Science & Technology B. 11: 1203-1208. DOI: 10.1116/1.586921 |
0.33 |
|
| 1993 |
Day HC, Allee DR. Selective area oxidation of silicon with a scanning force microscope Applied Physics Letters. 62: 2691-2693. DOI: 10.1063/1.109259 |
0.319 |
|
| 1993 |
Day HC, Allee DR, George R, Burrows VA. Nanometer scale patterning of a monolayer Langmuir-Blodgett film with a scanning tunneling microscope in air Applied Physics Letters. 62: 1629-1631. DOI: 10.1063/1.108608 |
0.358 |
|
| 1991 |
Allee DR, Umbach CP, Broers AN. Direct nanometer scale patterning of SiO2 with electron‐beam irradiation Journal of Vacuum Science & Technology B. 9: 2838-2841. DOI: 10.1116/1.585652 |
0.313 |
|
| 1991 |
Pan X, Allee DR, Broers AN, Tang YS, Wilkinson CW. Nanometer scale pattern replication using electron beam direct patterned SiO2 as the etching mask Applied Physics Letters. 59: 3157-3158. DOI: 10.1063/1.105770 |
0.344 |
|
| 1990 |
Allee DR, Chou SY, Harris JS, Pease RFW. Resonant tunneling of 1-dimensional electrons across an array of 3-dimensionally confined potential wells Superlattices and Microstructures. 7: 131-134. DOI: 10.1016/0749-6036(90)90125-Q |
0.368 |
|
| 1989 |
Allee DR. Engineering lateral quantum interference devices using electron beam lithography and molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7: 2015. DOI: 10.1116/1.584669 |
0.337 |
|
| 1989 |
Maluf NI, Chou SY, McVittie JP, Kuan SWJ, Allee DR, Pease RFW. Effects of chromium on the reactive ion etching of steep‐walled trenches in silicon Journal of Vacuum Science & Technology B. 7: 1497-1501. DOI: 10.1116/1.584520 |
0.312 |
|
| 1989 |
Chou SY, Allee DR, Pease RFW, Harris JS. Observation of electron resonant tunneling in a lateral dual-gate resonant tunneling field-effect transistor Applied Physics Letters. 55: 176-178. DOI: 10.1063/1.102113 |
0.328 |
|
| 1988 |
Allee DR. Sub-100-nm gate length GaAs metal–semiconductor field-effect transistors and modulation-doped field-effect transistors fabricated by a combination of molecular-beam epitaxy and electron-beam lithography Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6: 328. DOI: 10.1116/1.583990 |
0.428 |
|
| 1988 |
De La Houssaye PR, Allee DR, Pao YC, Pease RFW, Harris JS, Schlom DG. Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFET's for Gate Lengths to 550 A Ieee Electron Device Letters. 9: 148-150. DOI: 10.1109/55.2071 |
0.331 |
|
| 1987 |
Lo J, Hwang C, Huang TC, Campbell R, Allee D. Magnetic and structural properties of high rate dual ion‐beam sputtered NiFe films (invited) Journal of Applied Physics. 61: 3520-3525. DOI: 10.1063/1.338713 |
0.364 |
|
| Show low-probability matches. |