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Mim L. Nakarmi - Publications

Affiliations: 
Physics City University of New York, New York, NY, United States 
Area:
Condensed Matter Physics, Materials Science Engineering
Website:
https://www.brooklyn.cuny.edu/web/academics/faculty/faculty_profile.jsp?faculty=664
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57 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Maharjan N, Nakarmi ML. Luminescence properties of hexagonal boron nitride powders probed by deep UV photoluminescence spectroscopy. Mrs Advances. 6: 307-310. PMID 33996148 DOI: 10.1557/s43580-021-00059-4  0.322
2020 Maharjan N, Nakarmi ML. Observation of atomic-like transition in Sapphire crystal by deep UV photoluminescence spectroscopy Mrs Advances. 5: 1851-1857. DOI: 10.1557/Adv.2020.200  0.322
2020 Maharjan N, Rai RC, Mulmi DD, Nakarmi ML. Observation of bandgap renormalization in mesoscopic zinc oxide particles Journal of Luminescence. 219: 116879. DOI: 10.1016/J.Jlumin.2019.116879  0.42
2020 Maharjan N, Mulmi DD, Nakarmi ML. Optical transitions in lysozyme mediated zinc oxide nanoparticles probed by deep UV photoluminescence Optik. 202: 163622. DOI: 10.1016/J.Ijleo.2019.163622  0.45
2018 Chaldyshev VV, Kundelev EV, Poddubny AN, Vasil’ev AP, Yagovkina MA, Chend Y, Maharjan N, Liu Z, Nakarmi ML, Shakya NM. Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State Semiconductors. 52: 447-451. DOI: 10.1134/S1063782618040097  0.321
2017 Chen Y, Maharjan N, Liu Z, Nakarmi ML, Chaldyshev VV, Kundelev EV, Poddubny AN, Vasil'ev AP, Yagovkina MA, Shakya NM. Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state Journal of Applied Physics. 121: 103101. DOI: 10.1063/1.4978252  0.324
2016 Rai RC, Hinz J, Petronilo GXA, Sun F, Zeng H, Nakarmi ML, Niraula PR. Signature of structural distortion in optical spectra of YFe2O4 thin film Aip Advances. 6: 25021. DOI: 10.1063/1.4942753  0.389
2014 Cai B, Nakarmi ML, Franks BS, Rai RC. Electro-optical effects and temperature-dependent electrical properties of LuFe2O4 thin films Thin Solid Films. 562: 490-494. DOI: 10.1016/J.Tsf.2014.04.022  0.506
2014 Oder TN, Smith A, Freeman M, McMaster M, Cai B, Nakarmi ML. Properties of ZnO thin films codoped with lithium and phosphorus Journal of Electronic Materials. 43: 1370-1378. DOI: 10.1007/S11664-014-3074-9  0.575
2013 Oder TN, Smith A, Freeman M, McMaster M, Cai B, Nakarmi ML. Properties of sputter deposited ZnO films co-doped with lithium and phosphorus Materials Research Society Symposium Proceedings. 1494: 77-82. DOI: 10.1557/Opl.2013.4  0.562
2013 Cai B, Nakarmi ML, Oder TN, Mcmaster M, Velpukonda N, Smith A. Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films Journal of Applied Physics. 114. DOI: 10.1063/1.4845855  0.574
2012 Rai RC, Delmont A, Sprow A, Cai B, Nakarmi ML. Spin-charge-orbital coupling in multiferroic LuFe 2O 4 thin films Applied Physics Letters. 100. DOI: 10.1063/1.4720401  0.548
2012 Rai RC, Guminiak M, Wilser S, Cai B, Nakarmi ML. Elevated temperature dependence of energy band gap of ZnO thin films grown by e-beam deposition Journal of Applied Physics. 111. DOI: 10.1063/1.3699365  0.583
2012 Rai RC, Wilser S, Guminiak M, Cai B, Nakarmi ML. Optical and electronic properties of NiFe 2O 4 and CoFe 2O 4 thin films Applied Physics a: Materials Science and Processing. 106: 207-211. DOI: 10.1007/S00339-011-6549-Z  0.532
2012 Nakarmi ML, Cai B, Lin JY, Jiang HX. Three-step growth method for high quality AlN epilayers Physica Status Solidi (a) Applications and Materials Science. 209: 126-129. DOI: 10.1002/Pssa.201127475  0.651
2010 Cai B, Nakarmi ML. TEM analysis of microstructures of AlN/sapphire grown by MOCVD Materials Research Society Symposium Proceedings. 1202: 203-207. DOI: 10.1557/Proc-1202-I05-01  0.563
2009 Chen Z, Salagaj T, Jensen C, Strobl K, Hongpinyo V, Ooi B, Nakarmi M, Shum K. Non-Resonant Two-Photon Absorption-Induced Photoluminescence Study on ZnO Nanostructures Epitaxially Grown on Si (100) Substrates by Chemical Vapor Deposition Method Mrs Proceedings. 1178. DOI: 10.1557/Proc-1178-Aa09-13  0.372
2009 Chen Z, Salagaj T, Jensen C, Strobl K, Nakarmi M, Shum K. ZnO Thin Film Deposition on Sapphire Substrates by Chemical Vapor Deposition Mrs Proceedings. 1167. DOI: 10.1557/Proc-1167-O07-09  0.406
2009 Nakarmi ML, Nepal N, Lin JY, Jiang HX. Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys Applied Physics Letters. 94. DOI: 10.1063/1.3094754  0.667
2008 Sedhain A, Nepal N, Nakarmi ML, Al Tahtamouni TM, Lin JY, Jiang HX, Gu Z, Edgar JH. Photoluminescence properties of AlN homoepilayers with different orientations Applied Physics Letters. 93. DOI: 10.1063/1.2965613  0.746
2008 Dahal R, Li J, Fan ZY, Nakarmi ML, Al Tahtamouni TM, Lin JY, Jiang HX. AlN MSM and Schottky photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2148-2151. DOI: 10.1002/Pssc.200778489  0.739
2007 Pantha BN, Nepal N, Al Tahtamouni TM, Nakarmi ML, Li J, Lin JY, Jiang HX. Correlation between biaxial stress and free exciton transition in AlN epilayers Applied Physics Letters. 91. DOI: 10.1063/1.2789182  0.734
2007 Pantha BN, Dahal R, Nakarmi ML, Nepal N, Li J, Lin JY, Jiang HX, Paduano QS, Weyburne D. Correlation between optoelectronic and structural properties and epilayer thickness of AlN Applied Physics Letters. 90. DOI: 10.1063/1.2747662  0.669
2006 Nepal N, Nakarmi ML, Lin JY, Jiang HX. Time-resolved photoluminescence studies of Mg-doped AlN epilayers Proceedings of Spie - the International Society For Optical Engineering. 6118. DOI: 10.1117/12.651856  0.652
2006 Nepal N, Nakarmi ML, Jang HU, Lin JY, Jiang HX. Growth and photoluminescence studies of Zn-doped AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2387869  0.692
2006 Nakarmi ML, Nepal N, Ugolini C, Altahtamouni TM, Lin JY, Jiang HX. Correlation between optical and electrical properties of Mg-doped AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2362582  0.695
2006 Nepal N, Nakarmi ML, Lin J, Jiang HX. Photoluminescence studies of impurity transitions in AlGaN alloys Applied Physics Letters. 89. DOI: 10.1063/1.2337856  0.625
2006 Nepal N, Nam KB, Li J, Nakarmi ML, Lin JY, Jiang HX. Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy Applied Physics Letters. 88. DOI: 10.1063/1.2217160  0.64
2006 Nepal N, Shakya J, Nakarmi ML, Lin JY, Jiang HX. Deep ultraviolet photoluminescence studies of AlN photonic crystals Applied Physics Letters. 88. DOI: 10.1063/1.2190452  0.648
2006 Fan ZY, Li J, Nakarmi ML, Lin JY, Jiang HX. AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers Applied Physics Letters. 88. DOI: 10.1063/1.2174847  0.333
2006 Nepal N, Li J, Nakarmi ML, Lin JY, Jiang HX. Exciton localization in AlGaN alloys Applied Physics Letters. 88. DOI: 10.1063/1.2172728  0.646
2005 Nepal N, Li J, Nakarmi ML, Lin JY, Jiang HX. Temperature and compositional dependence of the energy band gap of AlGaN alloys Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2142333  0.643
2005 Chen L, Skromme BJ, Chen C, Sun W, Yang J, Khan MA, Nakarmi ML, Lin JY, Jiang HX, Reitmeyer ZJ, Davis RF, Dalmau RF, Schlesser R, Sitar Z. Optical Reflectance of bulk AlN Crystals and AlN epitaxial films Aip Conference Proceedings. 772: 297-298. DOI: 10.1063/1.1994108  0.351
2005 Nakarmi ML, Nepal N, Lin JY, Jiang HX. Unintentionally doped n-type Al 0.67Ga 0.33N epilayers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1954875  0.648
2005 Nam KB, Nakarmi ML, Lin JY, Jiang HX. Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1943489  0.368
2005 Nakarmi ML, Kim KH, Khizar M, Fan ZY, Lin JY, Jiang HX. Electrical and optical properties of Mg-dopedAl 0.7Ga 0.3N alloys Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1879098  0.441
2004 Nakarmi ML, Kim KH, Zhu K, Lin JY, Jiang HX. Mg doped Al-rich AlGaN alloys for deep UV emitters Proceedings of Spie - the International Society For Optical Engineering. 5530: 54-60. DOI: 10.1117/12.566192  0.32
2004 Nam KB, Nakarmi ML, Li J, Lin JY, Jiang HX. Time-resolved photoluminescence studies of Si & Mg-doped AlN epilayers Proceedings of Spie - the International Society For Optical Engineering. 5352: 188-195. DOI: 10.1117/12.525752  0.406
2004 Zhu K, Nakarmi ML, Kim KH, Lin JY, Jiang HX. Silicon doping dependence of highly conductive n-type Al 0.7Ga 0.3N Applied Physics Letters. 85: 4669-4671. DOI: 10.1063/1.1825055  0.4
2004 Kim KH, Fan ZY, Khizar M, Nakarmi ML, Lin JY, Jiang HX. AIGaN-based ultraviolet light-emitting diodes grown on AIN epilayers Applied Physics Letters. 85: 4777-4779. DOI: 10.1063/1.1819506  0.321
2004 Chen L, Skromme BJ, Dalmau RF, Schlesser R, Sitar Z, Chen C, Sun W, Yang J, Khan MA, Nakarmi ML, Lin JY, Jiang HX. Band edge exciton states in AlN single crystals and epitaxial layers Applied Physics Letters. 85: 4334-4336. DOI: 10.1063/1.1818733  0.453
2004 Nakarmi ML, Kim KH, Zhu K, Lin JY, Jiang HX. Transport properties of highly conductive n-type Al-rich Al xGa 1-xN (x≥0.7) Applied Physics Letters. 85: 3769-3771. DOI: 10.1063/1.1809272  0.381
2004 Nepal N, Nakarmi ML, Nam KB, Lin JY, Jiang HX. Acceptor-bound exciton transition in Mg-doped AIN epilayer Applied Physics Letters. 85: 2271-2273. DOI: 10.1063/1.1796521  0.672
2004 Nam KB, Li J, Nakarmi ML, Lin JY, Jiang HX. Unique optical properties of AlGaN alloys and related ultraviolet emitters Applied Physics Letters. 84: 5264-5266. DOI: 10.1063/1.1765208  0.412
2004 Nepal N, Nam KB, Nakarmi ML, Lin JY, Jiang HX, Zavada JM, Wilson RG. Optical properties of the nitrogen vacancy in AlN epilayers Applied Physics Letters. 84: 1090-1092. DOI: 10.1063/1.1648137  0.642
2003 Fan ZY, Nakarmi ML, Lin JY, Jiang HX. Delta-doped AlGaN/GaN heterostructure field-effect transistors with incorporation of AlN epilayers Materials Research Society Symposium - Proceedings. 798: 101-105. DOI: 10.1557/Proc-798-Y10.23  0.4
2003 Li J, Nam KB, Nakarmi ML, Lin JY, Jiang HX, Carrier P, Wei SH. Band structure and fundamental optical transitions in wurtzite AlN Applied Physics Letters. 83: 5163-5165. DOI: 10.1063/1.1633965  0.419
2003 Nam KB, Nakarmi ML, Li J, Lin JY, Jiang HX. Photoluminescence studies of Si-doped AlN epilayers Applied Physics Letters. 83: 2787-2789. DOI: 10.1063/1.1616199  0.427
2003 Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Transition metal ion implantation into AlGaN Journal of Applied Physics. 94: 4956-4960. DOI: 10.1063/1.1613375  0.304
2003 Nam KB, Nakarmi ML, Li J, Lin JY, Jiang HX. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence Applied Physics Letters. 83: 878-880. DOI: 10.1063/1.1594833  0.442
2003 Frazier RM, Stapleton J, Thaler GT, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Hebard AF, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Zavada JM, Wilson RG. Properties of Co-, Cr-, or Mn-implanted AlN Journal of Applied Physics. 94: 1592-1596. DOI: 10.1063/1.1586987  0.363
2003 Nam KB, Li J, Nakarmi ML, Lin JY, Jiang HX. Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers Applied Physics Letters. 82: 1694-1696. DOI: 10.1063/1.1559659  0.441
2003 Nakarmi ML, Kim KH, Li J, Lin JY, Jiang HX. Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping Applied Physics Letters. 82: 3041-3043. DOI: 10.1063/1.1559444  0.402
2002 Li J, Nam KB, Nakarmi ML, Lin JY, Jiang HX. Band-edge photoluminescence of AlN epilayers Applied Physics Letters. 81: 3365-3367. DOI: 10.1063/1.1518558  0.495
2002 Nam KB, Li J, Nakarmi ML, Lin JY, Jiang HX. Growth and optical studies of two-dimensional electron gas of Al-rich AlGaN/GaN heterostructures Applied Physics Letters. 81: 1809-1811. DOI: 10.1063/1.1504881  0.486
2002 Nam KB, Li J, Nakarmi ML, Lin JY, Jiang HX. Achieving highly conductive AlGaN alloys with high Al contents Applied Physics Letters. 81: 1038-1040. DOI: 10.1063/1.1492316  0.397
2002 Li J, Oder TN, Nakarmi ML, Lin JY, Jiang HX. Optical and electrical properties of Mg-doped p-type AlxGa 1-xN Applied Physics Letters. 80: 1210-1212. DOI: 10.1063/1.1450038  0.446
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