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Ning Kong, Ph.D. - Publications

Affiliations: 
2009 Electrical Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Kong N, Kirichenko TA, Hwang GS, Banerjee SK. Arsenic defect complexes at SiO2/Si interfaces: A density functional theory study Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.205328  0.698
2009 Kim Y, Kirichenko TA, Kong N, Henkelman G, Banerjee SK. First-principles studies of small arsenic interstitial complexes in crystalline silicon Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.075201  0.73
2008 Kong N, Kirichenko TA, Hwang GS, Banerjee SK. Interstitial-based boron diffusion dynamics in amorphous silicon Applied Physics Letters. 93. DOI: 10.1063/1.2976556  0.75
2008 Kong N, Kirichenko TA, Kim Y, Foisy MC, Banerjee SK. Physically based kinetic Monte Carlo modeling of arsenic-interstitial interaction and arsenic uphill diffusion during ultrashallow junction formation Journal of Applied Physics. 104. DOI: 10.1063/1.2942398  0.736
2007 Kong N, Kirichenko TA, Hwang GS, Mark FC, Anderson SGH, Banerjee SK. An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon Mrs Proceedings. 994: 307-313. DOI: 10.1557/Proc-0994-F10-02  0.728
2007 Kong N, Banerjee SK, Kirichenko TA, Anderson SGH, Foisy MC. Enhanced and retarded diffusion of arsenic in silicon by point defect engineering Applied Physics Letters. 90. DOI: 10.1063/1.2450663  0.749
2007 Kim Y, Kirichenko TA, Kong N, Larson L, Banerjee SK. First-principles studies of di-arsenic interstitial and its implications for arsenic-interstitial diffusion in crystalline silicon Physica B: Condensed Matter. 401: 144-147. DOI: 10.1016/J.Physb.2007.08.132  0.746
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