| Year |
Citation |
Score |
| 2019 |
Farber DG, Bae S, Okandan M, Reber DM, Kuzma T, Fonash SJ. Pathway to Depositing Device‐Quality 50°C Silicon Nitride in a High‐Density Plasma System Journal of the Electrochemical Society. 146: 2254-2257. DOI: 10.1149/1.1391923 |
0.396 |
|
| 2017 |
Fonash SJ, Nam WJ, Dornstetter J, Al-Ghzaiwat M, Foldyna M, Roca i Cabarrocas P. A Solar Cell Architecture for Enhancing Performance While Reducing Absorber Thickness and Back Contact Requirements Ieee Journal of Photovoltaics. 7: 974-979. DOI: 10.1109/Jphotov.2017.2703854 |
0.618 |
|
| 2015 |
Nam WJ, Fischer D, Gray Z, Nguyen N, Ji L, Neidich D, Fonash SJ. 30% increase in available photons per cell area using nanoelement array light trapping in 700-nm-Thick nc-Si Solar Cells Ieee Journal of Photovoltaics. 5: 28-32. DOI: 10.1109/Jphotov.2014.2363565 |
0.598 |
|
| 2014 |
Nam WJ, Pan S, Garg P, Fonash SJ. A Bottom-up SiNW AMOSFET fabrication approach giving SOI level performance Ecs Transactions. 64: 3-8. DOI: 10.1149/06410.0003ecst |
0.579 |
|
| 2013 |
Ji L, Nam WJ, Fonash S. Highly ordered nano-cone back reflector arrays for ultra-thin high performance CIGS cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1977-1979. DOI: 10.1109/PVSC.2013.6744858 |
0.531 |
|
| 2013 |
Forgie K, Nguyen N, Nam WJ, Fonash SJ. Paving the way for high-performance quantum dot solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1861-1863. DOI: 10.1109/PVSC.2013.6744505 |
0.526 |
|
| 2013 |
Smith C, Nguyen N, Ji L, Nam WJ, Fonash S. Learning to appreciate the maxim 'less is more' Conference Record of the Ieee Photovoltaic Specialists Conference. 621-623. DOI: 10.1109/PVSC.2013.6744227 |
0.614 |
|
| 2013 |
Nguyen N, Jiang Z, Forgie K, Nam WJ, Xu J, Fonash SJ. AMPS-1D simulation examination of the measured performance of a PbSe QD tandem solar cell structure Conference Record of the Ieee Photovoltaic Specialists Conference. 300-302. DOI: 10.1109/PVSC.2013.6744152 |
0.541 |
|
| 2012 |
Fonash SJ, Nam WJ, Ji L, Varadan VV. Photonics and plasmonics applied to solar cells Proceedings of Spie - the International Society For Optical Engineering. 8482. DOI: 10.1117/12.928052 |
0.624 |
|
| 2012 |
Nam WJ, Fonash SJ, Ji L, Varadan VV. Non-metallic, manufacturable arrays for high performance single junction thin film nc-Si solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 350-353. DOI: 10.1109/PVSC.2012.6317634 |
0.613 |
|
| 2012 |
Jun Nam W, Ji L, Varadan VV, Fonash SJ. Exploration of nano-element array architectures for substrate solar cells using an a-Si:H absorber Journal of Applied Physics. 111. DOI: 10.1063/1.4729539 |
0.394 |
|
| 2011 |
Liu YJ, Shi J, Zhang F, Liang H, Xu J, Lakhtakia A, Fonash SJ, Huang TJ. High-speed optical humidity sensors based on chiral sculptured thin films. Sensors and Actuators. B, Chemical. 156: 593-598. PMID 30739999 DOI: 10.1016/J.Snb.2011.02.003 |
0.566 |
|
| 2011 |
Nam WJ, Ji L, Varadan VV, Fonash S. Light and carrier collection management (LCCM) cell architechures: Some configuration comparisons Conference Record of the Ieee Photovoltaic Specialists Conference. 000917-000919. DOI: 10.1109/PVSC.2011.6186101 |
0.559 |
|
| 2011 |
Nam WJ, Ji L, Varadan VV, Fonash SJ. Designing optical path length, photonic, and plasmonic effects into nanostructured solar cells Proceedings of the Ieee Conference On Nanotechnology. 1409-1412. DOI: 10.1109/NANO.2011.6144594 |
0.547 |
|
| 2011 |
Jun Nam W, Ji L, Benanti TL, Varadan VV, Wagner S, Wang Q, Nemeth W, Neidich D, Fonash SJ. Incorporation of a light and carrier collection management nano-element array into superstrate a-Si:H solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3628460 |
0.391 |
|
| 2010 |
Garg P, Wu J, Fonash SJ. Accumulation-mode MOSFET (AMOSFETs) fabricated on silicon nanowires and polysilicon thin films Ecs Transactions. 28: 43-49. DOI: 10.1149/1.3491772 |
0.301 |
|
| 2010 |
Nam WJ, Liu T, Wagner S, Fonash S. A study of lateral collection single junction A-SI:H solar cell devices using nano-scale columnar array Conference Record of the Ieee Photovoltaic Specialists Conference. 923-927. DOI: 10.1109/PVSC.2010.5614685 |
0.579 |
|
| 2010 |
Cuiffi J, Benanti T, Nam WJ, Fonash S. Modeling of bulk and bilayer organic heterojunction solar cells Applied Physics Letters. 96. DOI: 10.1063/1.3383232 |
0.756 |
|
| 2009 |
Garg P, Hong Y, Iqbal MMH, Fonash SJ. Effect of metal-silicon nanowire contacts on the performance of accumulation metal oxide semiconductor field effect transistor Materials Research Society Symposium Proceedings. 1144: 57-62. DOI: 10.1557/Proc-1144-Ll06-02 |
0.6 |
|
| 2009 |
Cuiffi J, Benanti T, Nam WJ, Fonash S. Application of the AMPS computer program to organic bulk heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001546-001551. DOI: 10.1109/PVSC.2009.5411361 |
0.495 |
|
| 2008 |
Shan Y, Fonash SJ. Self-assembling silicon nanowires for device applications using the nanochannel-guided "grow-in-place" approach. Acs Nano. 2: 429-34. PMID 19206566 DOI: 10.1021/Nn700232Q |
0.603 |
|
| 2008 |
Iqbal MM-, Hong Y, Garg P, Udrea F, Migliorato P, Fonash SJ. The Nanoscale Silicon Accumulation-Mode MOSFET—A Comprehensive Numerical Study Ieee Transactions On Electron Devices. 55: 2946-2959. DOI: 10.1109/Ted.2008.2005174 |
0.397 |
|
| 2008 |
Liang H, Nam WJ, Fonash SJ. A novel parallel flow control (PFC) system for syringe-driven nanofluidics Technical Proceedings of the 2008 Nsti Nanotechnology Conference and Trade Show, Nsti-Nanotech, Nanotechnology 2008. 3: 281-283. |
0.457 |
|
| 2007 |
Fonash SJ, Iqbal MMH, Udrea F, Migliorato P. Numerical modeling study of the unipolar accumulation transistor Applied Physics Letters. 91. DOI: 10.1063/1.2805630 |
0.335 |
|
| 2007 |
Shan Y, Ashok S, Fonash SJ. Unipolar accumulation-type transistor configuration implemented using Si nanowires Applied Physics Letters. 91. DOI: 10.1063/1.2778752 |
0.627 |
|
| 2007 |
Keebaugh S, Nam WJ, Fonash SJ. Manufacturable, highly responsive gold nanowire mercury sensors 2007 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2007, Technical Proceedings. 3: 33-36. |
0.731 |
|
| 2006 |
Liu G, Rider KB, Nam WJ, Fonash SJ, Kim SH. Dendritic aggregation of oligothiophene during desorption of 2,5-diiodothiophene multilayer and topography-induced alignment of oligothiophene nanofibers. The Journal of Physical Chemistry. B. 110: 20197-201. PMID 17034196 DOI: 10.1021/Jp063363F |
0.55 |
|
| 2006 |
Liang H, Nam WJ, Fonash SJ. A self-contained, nano-gap biomolecule impedance sensor with fluidic control system Materials Research Society Symposium Proceedings. 952: 35-40. DOI: 10.1557/Proc-0952-F06-08 |
0.692 |
|
| 2006 |
Keebaugh S, Kalkan AK, Nam WJ, Fonash SJ. Gold nanowires for the detection of elemental and ionic mercury Electrochemical and Solid-State Letters. 9. DOI: 10.1149/1.2217130 |
0.734 |
|
| 2006 |
Nam WJ, Joshi S, Fonash SJ. A STEP-and-GROW technique - An economic and environmentally safe manufacturing approach for fabricating ordered nano structures Nanosingapore 2006: Ieee Conference On Emerging Technologies - Nanoelectronics - Proceedings. 2006: 322-323. DOI: 10.1109/NANOEL.2006.1609738 |
0.51 |
|
| 2006 |
Fonash SJ, Fenwick D, Hallacher P, Kuzma T, Nam WJ. Education and training approach for the future nanotechnology workforce Nanosingapore 2006: Ieee Conference On Emerging Technologies - Nanoelectronics - Proceedings. 2006: 235-236. DOI: 10.1109/NANOEL.2006.1609719 |
0.457 |
|
| 2006 |
Kalkan AK, Fonash SJ. Laser-activated surface-enhanced Raman scattering substrates capable of single molecule detection Applied Physics Letters. 89. DOI: 10.1063/1.2399369 |
0.589 |
|
| 2005 |
Kalkan AK, Fonash SJ. Electroless synthesis of Ag nanoparticles on deposited nanostructured Si films. The Journal of Physical Chemistry. B. 109: 20779-85. PMID 16853693 DOI: 10.1021/Jp052958S |
0.612 |
|
| 2005 |
Peng CY, Kalkan AK, Fonash SJ, Gu B, Sen A. A "grow-in-place" architecture and methodology for electrochemical synthesis of conducting polymer nanoribbon device arrays. Nano Letters. 5: 439-44. PMID 15755091 DOI: 10.1021/Nl048083V |
0.688 |
|
| 2005 |
Shan Y, Kalkan AK, Fonash SJ. The self-assembling "grow-in-place" process: An environmentally friendly approach to nanowire device fabrication Materials Research Society Symposium Proceedings. 901: 418-423. DOI: 10.1557/Proc-0901-Rb08-02 |
0.692 |
|
| 2005 |
Lee Y, Bae S, Fonash SJ. High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs Ieee Electron Device Letters. 26: 900-902. DOI: 10.1109/Led.2005.859625 |
0.351 |
|
| 2005 |
Kalkan AK, Henry MR, Li H, Cuiffi JD, Hayes DJ, Palmer C, Fonash SJ. Biomedical/analytical applications of deposited nanostructured Si films Nanotechnology. 16: 1383-1391. DOI: 10.1088/0957-4484/16/8/068 |
0.786 |
|
| 2004 |
Nam WJ, Fonash SJ, Cuiffi JD. Fabrication and evaluation of highly manufacturable nanoscale flow-through parallel electrode structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22. DOI: 10.1116/1.1808748 |
0.774 |
|
| 2004 |
Kalkan AK, Li H, O'Brien CJ, Fonash SJ. A rapid-response, high-sensitivity nanophase humidity sensor for respiratory monitoring Ieee Electron Device Letters. 25: 526-528. DOI: 10.1109/Led.2004.832657 |
0.723 |
|
| 2004 |
Shan Y, Kalkan AK, Peng CY, Fonash SJ. From Si source gas directly to positioned, electrically contacted Si nanowires: The self-assembling "grow-in-place" approach Nano Letters. 4: 2085-2089. DOI: 10.1021/Nl048901J |
0.773 |
|
| 2003 |
Peng CY, Nam WJ, Fonash SJ, Gu B, Sen A, Strawhecker K, Natarajan S, Foley HC, Kim SH. Formation of nanostructured polymer filaments in nanochannels. Journal of the American Chemical Society. 125: 9298-9. PMID 12889951 DOI: 10.1021/Ja0345423 |
0.651 |
|
| 2003 |
Kalkan AK, Fonash SJ. Carbon/Nafion® nanocomposite thin films as potential matrix-free laser desorption-ionization mass spectroscopy substrates Materials Research Society Symposium - Proceedings. 788: 595-600. DOI: 10.1557/Proc-788-L8.49 |
0.579 |
|
| 2003 |
Lee Y, Li H, Fonash SJ. High-performance poly-Si TFT on plastic substrates using a nano-structured separation layer approach Ieee Electron Device Letters. 24: 19-21. DOI: 10.1109/Led.2002.807021 |
0.589 |
|
| 2003 |
Suliman SA, Venkataraman B, Wu CT, Ridley RS, Dolny GM, Awadelkarim OO, Fonash SJ, Ruzyllo J. Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition Solid-State Electronics. 47: 899-905. DOI: 10.1016/S0038-1101(02)00442-2 |
0.38 |
|
| 2002 |
Lin X, Fonash SJ. Low temperature silicon dioxide thin films deposited using tetramethylsilane for stress control and coverage applications Materials Research Society Symposium - Proceedings. 695: 371-376. DOI: 10.1557/Proc-695-L8.9.1 |
0.469 |
|
| 2002 |
Suliman SA, Awadelkarim OO, Fonash SJ, Ridley RS, Dolny GM, Hao J, Knoedler CM. Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench Solid-State Electronics. 46: 837-845. DOI: 10.1016/S0038-1101(01)00344-6 |
0.347 |
|
| 2001 |
Cuiffi JD, Hayes DJ, Fonash SJ, Brown KN, Jones AD. Desorption-ionization mass spectrometry using deposited nanostructured silicon films. Analytical Chemistry. 73: 1292-5. PMID 11305665 DOI: 10.1021/Ac001081K |
0.786 |
|
| 2001 |
Lin X, Fonash SJ. Preparation and characterization of low temperature silicon dioxide thin films using tetramethylsilane (TMS) for microfabrication applications Materials Research Society Symposium Proceedings. 685: 341-346. DOI: 10.1557/Proc-685-D13.2.1 |
0.515 |
|
| 2001 |
Cheng I, Wagner S, Bae S, Fonash SJ. High Electron Mobility TFTs of Nanocrystalline Silicon Deposited at 150°oC on Plastic Foil Mrs Proceedings. 664. DOI: 10.1557/Proc-664-A26.1.1 |
0.42 |
|
| 2001 |
Wagner S, Fonash SJ, Jackson TN, Sturm JC. Flexible display enabling technology Proceedings of Spie - the International Society For Optical Engineering. 4362: 226-244. DOI: 10.1117/12.439119 |
0.395 |
|
| 2001 |
Nam WJ, Bae S, Kalkan AK, Fonash SJ. Nano- and microchannel fabrication using column/void network deposited silicon Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 1229-1233. DOI: 10.1116/1.1365129 |
0.707 |
|
| 2001 |
Krishnan AT, Bae S, Fonash SJ. Fabrication of microcrystalline silicon TFTs using a high-density plasma approach Ieee Electron Device Letters. 22: 399-401. DOI: 10.1109/55.936356 |
0.612 |
|
| 2001 |
Suliman SA, Gollagunta N, Trabzon L, Hao J, Ridley RS, Knoedler CM, Dolny GM, Awadelkarim OO, Fonash SJ. The dependence of UMOSFET characteristics and reliability on geometry and processing Semiconductor Science and Technology. 16: 447-454. DOI: 10.1088/0268-1242/16/6/305 |
0.331 |
|
| 2001 |
Cheng IC, Wagner S, Bae S, Fonash SJ. High electron mobility TFTs of nanocrystalline silicon deposited at 150°C on plastic foil Materials Research Society Symposium - Proceedings. 664. |
0.303 |
|
| 2000 |
Cuiffi JD, Zhu H, Fonash SJ. A trapped charge model for the transient effect in CIGS solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 674-675. DOI: 10.1109/PVSC.2000.915954 |
0.756 |
|
| 2000 |
Kalkan AK, Bae S, Li H, Hayes DJ, Fonash SJ. Nanocrystalline Si thin films with arrayed void-column network deposited by high density plasma Journal of Applied Physics. 88: 555-561. DOI: 10.1063/1.373695 |
0.733 |
|
| 2000 |
Kaan Kalkan A, Fonash SJ, Cheng SC. Band-tail photoluminescence in nanocrystalline Si Applied Physics Letters. 77: 55-57. DOI: 10.1063/1.126875 |
0.318 |
|
| 2000 |
Bae S, Fonash SJ. Defined crystallization of amorphous-silicon films using contact printing Applied Physics Letters. 76: 595-597. DOI: 10.1063/1.125828 |
0.41 |
|
| 2000 |
Bae S, Farber DG, Fonash SJ. Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma Solid-State Electronics. 44: 1355-1360. DOI: 10.1016/S0038-1101(00)00086-1 |
0.401 |
|
| 2000 |
Krishnan AT, Bae S, Fonash SJ. Low temperature microcrystalline silicon thin film resistors on glass substrates Solid-State Electronics. 44: 1163-1168. DOI: 10.1016/S0038-1101(00)00057-5 |
0.597 |
|
| 2000 |
Cheng SC, Pantano CG, Kalkan AK, Bae SH, Fonash SJ. TEM characterisation of an interfacial layer between silicon and glass Physics and Chemistry of Glasses. 41: 136-139. |
0.552 |
|
| 1999 |
Kalkan AK, Fonash SJ. Stress and Dopant Activation in Solid Phase Crystalized Si Films Mrs Proceedings. 558. DOI: 10.1557/Proc-558-225 |
0.379 |
|
| 1999 |
Zhu H, Kalkan AK, Cuiffi J, Fonash SJ. Directional breakdown of metal/a-Si:H/c-Si heterostructures and its application to PROMs Materials Research Society Symposium - Proceedings. 557: 857-862. DOI: 10.1557/Proc-557-857 |
0.788 |
|
| 1999 |
Wang YZ, Fonash SJ, Awadelkarim OO, Gu T. Crystallization of a-Si:H on glass for active layers in thin film transistors effects of glass coating Journal of the Electrochemical Society. 146: 299-305. DOI: 10.1149/1.1391604 |
0.41 |
|
| 1999 |
Okandan M, Fonash SJ, Maiti B, Tseng HH, Tobin P. Wearout, quasi breakdown, and annealing of ultrathin dielectrics. Impact on complementary metal oxide semiconductor performance and reliability Electrochemical and Solid-State Letters. 2: 583-584. DOI: 10.1149/1.1390912 |
0.326 |
|
| 1999 |
Bae S, Fonash SJ. Assessment of as-deposited microcrystalline silicon films on polymer substrates using electron cyclotron resonance-plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 1987-1990. DOI: 10.1116/1.581715 |
0.428 |
|
| 1998 |
Zhu H, Fonash SJ. Band-Offset Determination for Intrinsic a-Si/ p+μc-Si or Intrinsic a-Si/n+νc-Si Heterostructure Mrs Proceedings. 507. DOI: 10.1557/Proc-507-371 |
0.375 |
|
| 1998 |
Kalkan AK, Bae S, Cheng S, Wang Y, Fonash SJ. Variation of Bandgap in Nanocrystalline Silicon as Monitored by Subgap Photoluminescence Mrs Proceedings. 507. DOI: 10.1557/Proc-507-291 |
0.625 |
|
| 1998 |
Bae S, Kalkan AK, Cheng S, Fonash SJ. Characteristics of amorphous and polycrystalline silicon films deposited at 120° C by electron cyclotron resonance plasma-enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1912-1916. DOI: 10.1116/1.581195 |
0.632 |
|
| 1997 |
Kalkan AK, Kingi RM, Fonash SJ. Dopant activation during solid phase crystallization of poly-Si and influence of fluorine and hydrogen Mrs Proceedings. 467. DOI: 10.1557/Proc-467-415 |
0.369 |
|
| 1997 |
Kalkan AK, Fonash SJ. Control of Enhanced Optical Absorption in μc-Si Mrs Proceedings. 467: 319. DOI: 10.1557/Proc-467-319 |
0.306 |
|
| 1997 |
Okandan M, Fonash SJ, Ozaita M, Preuninger F, Chan YD, Werking J. Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching Ieee Electron Device Letters. 18: 495-498. DOI: 10.1109/55.624931 |
0.373 |
|
| 1997 |
Kalkan AK, Fonash SJ. Metal-induced crystallization of a-Si thin films by non vacuum treatments Journal of the Electrochemical Society. 144. |
0.568 |
|
| 1996 |
Kingi R, Wang Y, Fonash S, Awadelkarim O, Li Y. Approaches to modifying solid phase crystallization kinetics for a-Si films Mrs Proceedings. 424: 249. DOI: 10.1557/Proc-424-249 |
0.354 |
|
| 1996 |
Kingi R, Wang Y, Fonash SJ, Awadelkarim O, Mehlhaff J. Comparison Between Rapid Thermal and Furnace Annealing for A-Si Solid Phase Crystallization Mrs Proceedings. 424: 237. DOI: 10.1557/Proc-424-237 |
0.318 |
|
| 1996 |
Suntharalingam V, Fonash SJ. A New Electrically Reversible Depassivation/Passivation Mechanism in Polycrystalline Silicon Mrs Proceedings. 424: 207. DOI: 10.1557/Proc-424-207 |
0.347 |
|
| 1996 |
Globus T, Fonash SJ, Gildenblat G. Optical characterization of hydrogenated silicon films in the extended energy range Materials Research Society Symposium - Proceedings. 406: 313-318. DOI: 10.1557/Proc-406-313 |
0.398 |
|
| 1996 |
Okandan M, Fonash SJ, Awadelkarim OO, Chan YD, Preuninger F. Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure Ieee Electron Device Letters. 17: 388-394. DOI: 10.1109/55.511584 |
0.339 |
|
| 1996 |
Bae S, Fonash SJ. Impact of structure on photogating Journal of Applied Physics. 79: 2213-2220. DOI: 10.1063/1.361185 |
0.321 |
|
| 1996 |
Fonash SJ, Ozaita M, Awadelkarim OO, Preuninger F, Chan YD. Detection and comparison of localized states produced in poly-Si/ultra-thin oxide/silicon, structures by plasma exposure or plasma charging during reactive ion etching Journal of Applied Physics. 79: 2091-2096. DOI: 10.1063/1.361067 |
0.386 |
|
| 1996 |
Awadelkarim OO, Fonash SJ, Mikulan PI, Chan YD. Plasma‐charging damage to gate SiO2 and SiO2/Si interfaces in submicron n‐channel transistors: Latent defects and passivation/depassivation of defects by hydrogen Journal of Applied Physics. 79: 517-525. DOI: 10.1063/1.360860 |
0.376 |
|
| 1995 |
Wang Y, Kingi R, Awadelkarim OO, Fonash SJ. Effects of Deposition Parameters on Crystallization of Pecvd Amorphous Silicon Films Mrs Proceedings. 403: 373-378. DOI: 10.1557/Proc-403-373 |
0.356 |
|
| 1995 |
Gu T, Awadelkarim OO, Fonash SJ, Rembetski JF, Chan YD. Annealing of Reactive ion Etching Plasma-Exposed Thin Oxides Journal of the Electrochemical Society. 142: 606-609. DOI: 10.1149/1.2044108 |
0.322 |
|
| 1995 |
Suntharalingam V, Fonash SJ. Electrically reversible depassivation/passivation mechanism in polycrystalline silicon Applied Physics Letters. 1400. DOI: 10.1063/1.116093 |
0.331 |
|
| 1995 |
Awadelkarim OO, Fonash SJ, Mikulan PI, Ozaita M, Chan YD. Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing Microelectronic Engineering. 28: 47-50. DOI: 10.1016/0167-9317(95)00013-X |
0.374 |
|
| 1995 |
Tuttle JR, Sites JR, Delahoy A, Shafarman W, Basol B, Fonash S, Gray J, Menner R, Phillips J, Rockett A, Scofield J, Shapiro FR, Singh P, Suntharalingan V, Tarrant D, et al. Characterization and modeling of Cu(In, Ga)(S, Se)2-based photovoltaic devices: a laboratory and industrial perspective Progress in Photovoltaics. 3: 89-104. DOI: 10.1002/Pip.4670030202 |
0.317 |
|
| 1994 |
Yin A, Fonash SJ, Reber DM, Li YM, Bennett M. A Comprehensive Study of Plasma Enhanced Crystallization of a-Si:H Films on Glass Mrs Proceedings. 345: 81. DOI: 10.1557/Proc-345-81 |
0.364 |
|
| 1994 |
Hou J, Xi J, Kampas F, Bae S, Fonash SJ. Non-local recombination in "Tunnel junctions" of multijunction amorphous Si alloy solar cells Materials Research Society Symposium Proceedings. 336: 717-722. DOI: 10.1557/Proc-336-717 |
0.325 |
|
| 1994 |
Vasanth K, Caputo D, Wagner S, Bennett M, Bae S, Fonash S. Adjusting the Defect Profile in a-Si:H Solar Cells with Energy Resolved Electron or Laser Beams: Experiment and Modeling Mrs Proceedings. 336: 693. DOI: 10.1557/Proc-336-693 |
0.322 |
|
| 1994 |
Gu T, Awadelkarim OO, Fonash SJ, Rembetski JF, Chan YD. Effect of Plasma Etching Edge-Type Exposures on Si Substrates: A Correlation Between Carrier Lifetime and Etch-Induced Defect States Journal of the Electrochemical Society. 141: 3230-3234. DOI: 10.1149/1.2059308 |
0.396 |
|
| 1994 |
Fonash SJ, Hou J, Rubinelli FA, Bennett M, Wiedeman S, Yang L, Newton J. Photodetection enhancement in two-terminal amorphous silicon-based devices: an experimental and computer simulation study Optical Engineering. 33: 2065-2069. DOI: 10.1117/12.169735 |
0.39 |
|
| 1994 |
Gu T, Ditizio RA, Fonash SJ, Awadelkarim OO, Ruzyllo J, Collins RW, Leary HJ. Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron‐enhanced reactive ion etching Journal of Vacuum Science & Technology B. 12: 567-573. DOI: 10.1116/1.587391 |
0.345 |
|
| 1994 |
Yin A, Fonash SJ. High-Performance P-Channel Poly-Si TFT's Using Electron Cyclotron Resonance Hydrogen Plasma Passivation Ieee Electron Device Letters. 15: 502-503. DOI: 10.1109/55.338417 |
0.351 |
|
| 1994 |
Gu T, Awadelkarim OO, Fonash SJ, Chan YD. Degradation of Submicron N-Channel MOSFET Hot Electron Reliability due to Edge Damage from Polysilicon Gate Plasma Etching Ieee Electron Device Letters. 15: 396-398. DOI: 10.1109/55.320980 |
0.328 |
|
| 1994 |
Awadelkarim OO, Mikulan PI, Gu T, Fonash SJ, Ditizio RA. Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching Ieee Electron Device Letters. 15: 85-87. DOI: 10.1109/55.285394 |
0.37 |
|
| 1993 |
Yin A, Fonash SJ. Selective Crystallization of A-Si:H Films on Glass Mrs Proceedings. 321. DOI: 10.1557/Proc-321-683 |
0.358 |
|
| 1993 |
Reinhardt K, Divincenzo B, Yang C-, Arleo P, Marks J, Mikulan P, Gu T, Fonash S. An Effective In-Situ O 2 High Density Plasma Clean Mrs Proceedings. 315: 267. DOI: 10.1557/Proc-315-267 |
0.327 |
|
| 1993 |
Mikulan PJ, Koo TT, Awadelkarim OO, Fonash SJ. Oxide degradation resulting from photoresist ashing Materials Research Society Symposium Proceedings. 309: 61-66. DOI: 10.1557/Proc-309-61 |
0.319 |
|
| 1993 |
Rembetski JF, Chan YD, Boden E, Gu T, Awadelkarim OO, Ditizio RA, Fonash SJ, Li X, Viswanathan CR. A comparison of cl2and hbr/cl2-based polysilicon etch chemistries: Impact on sio2and si substrate damage Japanese Journal of Applied Physics. 32: 3023-3028. DOI: 10.1143/Jjap.32.3023 |
0.397 |
|
| 1993 |
Awadelkarim OO, Rembetski JF, Chan YD, Gu T, Ditizio RA, Mikulan PI, Fonash SJ. Creation of Deep Gap States in Si During Cl2Or Hbr Plasma Etch Exposures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 1332-1336. DOI: 10.1116/1.578549 |
0.38 |
|
| 1993 |
Gu T, Rembetski JF, Aum P, Reinhardt KA, Chan YD, Ditizio RA, Awadefkarim OO, Fonash SJ. Reactive Ion Etching Induced Damage to SiO2and SiO2-Si Interfaces in Poiycrystaiiine Si Overetch Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 1323-1326. DOI: 10.1116/1.578547 |
0.364 |
|
| 1993 |
Awadelkarim OO, Gu T, Ditizio RA, Mikulan PI, Fonash SJ, Rembetski JF, Chan YD. Electrical Characterization of the Si Substrate in Magnetically Enhanced or Conventional Reactive-Ion-Etch-Exposed SiO<inf>2</inf>/p-Si Structures Ieee Electron Device Letters. 14: 167-169. DOI: 10.1109/55.215162 |
0.404 |
|
| 1993 |
Liu G, Fonash SJ. Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing Applied Physics Letters. 62: 2554-2556. DOI: 10.1063/1.109294 |
0.411 |
|
| 1993 |
Awadelkarim OO, Gu T, Mikulan PI, Ditizio RA, Fonash SJ, Reinhardt KA, Chan YD. Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen Applied Physics Letters. 62: 958-960. DOI: 10.1063/1.108532 |
0.338 |
|
| 1992 |
Fonash S, Ditizio R, Gu T, Mikulan P, Awadelkarim O, Collins R, Rembetski J, Reinhardt K, Chan Y. Surface Conditioning Issues Related to Patiterning and Etching Mrs Proceedings. 259. DOI: 10.1557/Proc-259-55 |
0.323 |
|
| 1992 |
Li X, Wagner S, Bennett M, Fonash S. Kinetics of Light-Induced Degradation of a-Si:H Solar Cells Compared to I-Layer Films Mrs Proceedings. 258. DOI: 10.1557/Proc-258-899 |
0.342 |
|
| 1992 |
Grot SA, Ditizio RA, Gildenblat GS, Badzian AR, Fonash SJ. Electronic Device Fabrication Using Electron Cyclotron Resonance Etching of Boron Doped Homoepitaxial Diamond Films Mrs Proceedings. 242: 145. DOI: 10.1557/Proc-242-145 |
0.344 |
|
| 1992 |
Rubinelli FA, Arch JK, Fonash SJ. Effect of contact barrier heights on a-Si:H p-i-n detector and solar-cell performance Journal of Applied Physics. 72: 1621-1630. DOI: 10.1063/1.351679 |
0.356 |
|
| 1992 |
Grot SA, Ditizio RA, Gildenblat GS, Badzian AR, Fonash SJ. Oxygen based electron cyclotron resonance etching of semiconducting homoepitaxial diamond films Applied Physics Letters. 61: 2326-2328. DOI: 10.1063/1.108232 |
0.347 |
|
| 1992 |
Nag S, Nicque JL, Malone C, Arch J, Heller D, Fonash S, Wronski C. Effect of the metal-semiconductor interface on carrier collection in a-Si: H Schottky barrier solar cell structures Solar Energy Materials and Solar Cells. 28: 285-292. DOI: 10.1016/0927-0248(92)90036-O |
0.364 |
|
| 1991 |
Liu G, Fonash SJ. Low thermal budget poly-si thin film transistors on glass Japanese Journal of Applied Physics. 30: L269-L271. DOI: 10.1143/JJAP.30.L269 |
0.313 |
|
| 1991 |
Kakkad R, Fonash SJ, Weideman S. Highly conductive ultrathin crystalline Si layers by thermal crystallization of amorphous Si Applied Physics Letters. 59: 3309-3311. DOI: 10.1063/1.105715 |
0.305 |
|
| 1990 |
Kakkad R, Fonash SJ, Howell PR. Dopant Enhanced Grain Growth During Crystallization of Amorphous Silicon Using Rapid Thermal Anealing Mrs Proceedings. 182: 115. DOI: 10.1557/Proc-182-115 |
0.384 |
|
| 1990 |
Heddleson JM, Fonash SJ, Horn MW. Evolution of Damage, Dopant Deactivation, and Hydrogen-Related Effects in Dry Etch Silicon as a Function of Annealing History Journal of the Electrochemical Society. 137: 1960-1964. DOI: 10.1149/1.2086839 |
0.571 |
|
| 1990 |
Fonash SJ. An Overview of Dry Etching Damage and Contamination Effects Journal of the Electrochemical Society. 137: 3885-3892. DOI: 10.1149/1.2086322 |
0.344 |
|
| 1990 |
Liu G, Fonash SJ. Low thermal budget poly-Si thin film transistors in glass Conference On Solid State Devices and Materials. 963-965. |
0.317 |
|
| 1989 |
Lau WS, Fonash SJ, Kanicki J. Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films Journal of Applied Physics. 66: 2765-2767. DOI: 10.1063/1.344202 |
0.426 |
|
| 1987 |
Horn MW, Heddleson JM, Fonash SJ. Permeation of hydrogen into silicon during low-energy hydrogen ion beam bombardment Applied Physics Letters. 51: 490-492. DOI: 10.1063/1.98376 |
0.53 |
|
| 1986 |
Rohatgi A, Rai-Choudhury P, Fonash SJ, Caplan PJ, Lester P, Poindexter EH, Singh R. Characterization and control of silicon surface modification produced by CCl4reactive ion etching Journal of the Electrochemical Society. 133: 408-416. DOI: 10.1149/1.2108588 |
0.367 |
|
| 1986 |
Singh R, Fonash SJ, Rohatgi A. Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si Applied Physics Letters. 49: 800-802. DOI: 10.1063/1.97551 |
0.315 |
|
| 1986 |
Rohatgi A, Meier DL, Rai-Choudhury P, Fonash SJ, Singh R. Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells Journal of Applied Physics. 59: 4167-4171. DOI: 10.1063/1.336676 |
0.309 |
|
| 1985 |
Fonash SJ, Singh R, Rohatgi A, Rai‐Choudhury P, Caplan PJ, Poindexter EH. Silicon damage caused by CCl4reactive ion etching: Its characterization and removal by rapid thermal annealing Journal of Applied Physics. 58: 862-866. DOI: 10.1063/1.336156 |
0.36 |
|
| 1985 |
Davis RJ, Climent A, Fonash SJ. Dependence of low energy ion beam exposure effects in silicon on ion species, exposure history, and material properties Nuclear Inst. and Methods in Physics Research, B. 7: 831-835. DOI: 10.1016/0168-583X(85)90478-1 |
0.3 |
|
| 1983 |
Singh R, Fonash SJ, Ashok S, Caplan PJ, Shappirio J, Hage‐Ali M, Ponpon J. Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching Journal of Vacuum Science and Technology. 1: 334-336. DOI: 10.1116/1.572127 |
0.348 |
|
| 1983 |
Singh R, Fonash SJ, Caplan PJ, Poindexter EH. Effect of beam energy and anneal history on trivalently bonded silicon defect centers induced by ion beam etching Applied Physics Letters. 43: 502-504. DOI: 10.1063/1.94367 |
0.323 |
|
| 1982 |
Fonash SJ, Ashok S, Singh R. Effect of neutral ion beam sputtering and etching on silicon Thin Solid Films. 90: 231-235. DOI: 10.1016/0040-6090(82)90367-4 |
0.359 |
|
| 1981 |
Ashok S, Fonash SJ, Singh R, Wiley P. On Resolving the Anomaly of Indium-tin Oxide Silicon Junctions Ieee Electron Device Letters. 2: 184-186. DOI: 10.1109/Edl.1981.25392 |
0.389 |
|
| 1981 |
Fonash SJ, Ashok S, Singh R. Effect of ion-beam sputter damage on Schottky barrier formation in silicon Applied Physics Letters. 39: 423-425. DOI: 10.1063/1.92738 |
0.383 |
|
| 1980 |
Fonash SJ. General formulation of the current-voltage characteristic of a p-n heterojunction solar cell Journal of Applied Physics. 51: 2115-2118. DOI: 10.1063/1.327883 |
0.302 |
|
| 1979 |
Fonash SJ, Ashok S. An additional source of photovoltage in photoconductive materials Applied Physics Letters. 35: 535-537. DOI: 10.1063/1.91199 |
0.332 |
|
| 1977 |
Fonash SJ. Theory of capacitance and conductance behavior of Schottky-barrier and conducting M-I-S diodes with interface traps Journal of Applied Physics. 48: 3953-3958. DOI: 10.1063/1.324271 |
0.313 |
|
| 1975 |
Roger JA, Dupuy CHS, Fonash SJ. Evidence for interfacial space-charge regions in electron-beam-evaporated SiO Journal of Applied Physics. 46: 3102-3105. DOI: 10.1063/1.322006 |
0.347 |
|
| 1975 |
Fonash SJ. The role of the interfacial layer in metal-semiconductor solar cells Journal of Applied Physics. 46: 1286-1289. DOI: 10.1063/1.321694 |
0.331 |
|
| 1974 |
Fonash SJ, Roger JA, Dupuy CHS. ac equivalent circuits for MIM structures Journal of Applied Physics. 45: 2907-2910. DOI: 10.1063/1.1663699 |
0.326 |
|
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