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Kyuchul Chong, Ph.D. - Publications

Affiliations: 
2005 University of California, Los Angeles, Los Angeles, CA 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Zhang X, Xu C, Chong K, Tu KN, Xie YH. Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits. Materials (Basel, Switzerland). 4: 952-962. PMID 28879960 DOI: 10.3390/Ma4060952  0.592
2005 Chong K, Zhang X, Tu K, Huang D, Chang M, Xie Y. Three-Dimensional Substrate Impedance Engineering Based on<tex>$hbox p ^-$</tex>/<tex>$hbox p ^+$</tex>Si Substrate for Mixed-Signal System-on-Chip (SoC) Ieee Transactions On Electron Devices. 52: 2440-2446. DOI: 10.1109/Ted.2005.857190  0.613
2005 Chong K, Xie YH. Low capacitance and high isolation bond pad for high-frequency RFICs Ieee Electron Device Letters. 26: 746-748. DOI: 10.1109/Led.2005.854399  0.539
2005 Chong K, Xie YH. High-performance on-chip transformers Ieee Electron Device Letters. 26: 557-559. DOI: 10.1109/Led.2005.851817  0.537
2005 Chong K, Xie Y, Yu K, Huang D, Chang M-F. High-performance inductors integrated on porous silicon Ieee Electron Device Letters. 26: 93-95. DOI: 10.1109/Led.2004.840546  0.552
2003 Kim HS, Chong K, Xie YH, Jenkins KA. The Importance of Distributed Grounding in Combination with Porous Si Trenches for the Reduction of RF Crosstalk Through p- Si Substrate Ieee Electron Device Letters. 24: 640-642. DOI: 10.1109/Led.2003.818071  0.597
2003 Kim H, Chong K, Xie Y. Study of the cross-sectional profile in selective formation of porous silicon Applied Physics Letters. 83: 2710-2712. DOI: 10.1063/1.1613995  0.566
2003 Kim H, Chong K, Xie Y. The promising role of porous Si in mixed-signal integrated circuit technology Physica Status Solidi (a). 197: 269-274. DOI: 10.1002/Pssa.200306514  0.581
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