Year |
Citation |
Score |
2020 |
Snyman LW, Xu K, Polleux J. Micron and Nano-Dimensioned Silicon LEDs Emitting at 650 and 750-850 nm Wavelengths in Standard Si Integrated Circuitry Ieee Journal of Quantum Electronics. 56: 1-10. DOI: 10.1109/Jqe.2020.2994980 |
0.352 |
|
2020 |
Wu K, Cheng J, Huang G, Yuan J, Xu K. Poly-silicon light-emitting-device based electro-optical interfaces in standard silicon-CMOS integrated circuitry Optical Materials. 102: 109783. DOI: 10.1016/J.Optmat.2020.109783 |
0.389 |
|
2019 |
Xu K, Chen Y, Okhai TA, Snyman LW. Micro optical sensors based on avalanching silicon light-emitting devices monolithically integrated on chips Optical Materials Express. 9: 3985-3997. DOI: 10.1364/Ome.9.003985 |
0.382 |
|
2019 |
Iniguez B, Grabinski W, MijalkoviC S, Xia K, Scholten AJ, Chauhan YS, Roy AS, Yoshitomi S, Xu K. Foreword Special Issue on Compact Modeling for Circuit Design Ieee Transactions On Electron Devices. 66: 7-11. DOI: 10.1109/Ted.2018.2884284 |
0.304 |
|
2019 |
Chen Y, Xu D, Xu K, Zhang N, Liu S, Zhao J, Luo Q, Snyman LW, Swart JW. Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC* Chinese Physics B. 28: 107801. DOI: 10.1088/1674-1056/Ab3E44 |
0.368 |
|
2019 |
Sun H, Xu K, Zhao J, Zhang J, Zhou Y, Liu L, Yuan J, Huang L, Zhu K, Snyman LW, Ogudo KA. A dependency of emission efficiency of poly-silicon light-emitting device on avalanching current Optical Materials. 88: 711-717. DOI: 10.1016/J.Optmat.2018.12.013 |
0.374 |
|
2018 |
Xu K. Monolithically integrated Si gate-controlled light-emitting device: science and properties Journal of Optics. 20: 24014. DOI: 10.1088/2040-8986/Aaa2B7 |
0.377 |
|
2018 |
Xu K, Huang L, Zhang Z, Zhao J, Zhang Z, Snyman LW, Swart JW. Light emission from a poly-silicon device with carrier injection engineering Materials Science and Engineering B-Advanced Functional Solid-State Materials. 231: 28-31. DOI: 10.1016/J.Mseb.2018.07.002 |
0.407 |
|
2017 |
Xu K, Snyman LW, Aharoni H. Si light-emitting device in integrated photonic CMOS ICs Optical Materials. 69: 274-282. DOI: 10.1016/J.Optmat.2017.03.055 |
0.386 |
|
2016 |
Xu K, Zhang Z, Zhang Z. Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices Journal of Nanophotonics. 10: 16002-16002. DOI: 10.1117/1.Jnp.10.016002 |
0.392 |
|
2016 |
Zhang C, Liu S, Xu K, Wei J, Ye R, Sun W, Su W, Zhang A, Ma S, Lin F, Sun G. A Novel High Latch-Up Immunity Electrostatic Discharge Protection Device for Power Rail in High-Voltage ICs Ieee Transactions On Device and Materials Reliability. 16: 266-268. DOI: 10.1109/Tdmr.2016.2544350 |
0.315 |
|
2016 |
Xu K, Liu S, Sun W, Ma Z, Li Z, Yu Q, Li G. Design and Fabrication of a Monolithic Optoelectronic Integrated Si CMOS LED Based on Hot-Carrier Effect Ieee Journal On Selected Topics in Quantum Electronics. 22. DOI: 10.1109/Jstqe.2016.2517980 |
0.486 |
|
2016 |
Xu K. Integrated silicon directly modulated light source using p-well in standard CMOS technology Ieee Sensors Journal. 16: 6184-6191. DOI: 10.1109/Jsen.2016.2582840 |
0.349 |
|
2016 |
Xu K, Zhang Z, Yu Q, Wen Z. Field-Effect Electroluminescence Spectra of Reverse-Biased PN Junctions in Silicon Device for Microdisplay Journal of Display Technology. 12: 115-121. DOI: 10.1109/Jdt.2015.2470097 |
0.406 |
|
2016 |
Xu K, Ogudo KA, Polleux JL, Viana C, Ma Z, Li Z, Yu Q, Li G, Snyman LW. Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits Leukos - Journal of Illuminating Engineering Society of North America. 12: 203-212. DOI: 10.1080/15502724.2015.1134333 |
0.501 |
|
2016 |
Xu K, Snyman LW, Polleux JL, Ogudo KA, Viana C, Yu Q, Li GP. Silicon LEDs toward high frequency on-chip link Optik. 127: 7002-7020. DOI: 10.1016/J.Ijleo.2016.05.025 |
0.355 |
|
2016 |
Xu K, Liu S, Zhao J, Sun W, Li G. A new silicon LED concept for future opto-coupler system applications in short distance Optik. 127: 2895-2897. DOI: 10.1016/J.Ijleo.2015.12.045 |
0.462 |
|
2015 |
Xu K, Liu H, Zhang Z. Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry. Applied Optics. 54: 6420-4. PMID 26367823 DOI: 10.1364/Ao.54.006420 |
0.395 |
|
2015 |
Li G, Xu X, Xu K, Chu F, Song J, Zhou S, Xu B, Gong Y, Zhang H, Zhang Y, Wang P, Lei H. Ligustrazinyl amides: a novel class of ligustrazine-phenolic acid derivatives with neuroprotective effects. Chemistry Central Journal. 9: 9. PMID 25810760 DOI: 10.1186/s13065-015-0084-5 |
0.313 |
|
2015 |
Xu K, Liu S, Zhao J, Sun W, Li G. Analysis of simulation of multiterminal electro-optic modulator based on p-n junction in reverse bias Optical Engineering. 54: 57104-57104. DOI: 10.1117/1.Oe.54.5.057104 |
0.393 |
|
2015 |
Xu K, Yu Q, Li G. Increased Efficiency of Silicon Light-Emitting Device in Standard Si-CMOS Technology Ieee Journal of Quantum Electronics. 51: 1-6. DOI: 10.1109/Jqe.2015.2449759 |
0.505 |
|
2015 |
Snyman LW, Xu K, Polleux J, Ogudo KA, Viana C. Higher Intensity SiAvLEDs in an RF Bipolar Process Through Carrier Energy and Carrier Momentum Engineering Ieee Journal of Quantum Electronics. 51: 1-10. DOI: 10.1109/Jqe.2015.2427036 |
0.341 |
|
2014 |
Li G, Li D, Niu Y, He T, Chen KC, Xu K. Alternating block polyurethanes based on PCL and PEG as potential nerve regeneration materials. Journal of Biomedical Materials Research. Part A. 102: 685-97. PMID 23554296 DOI: 10.1002/jbm.a.34732 |
0.311 |
|
2014 |
Xu K. Electro-optical modulation processes in Si-PMOSFET LEDs operating in the avalanche light emission mode Ieee Transactions On Electron Devices. 61: 2085-2092. DOI: 10.1109/Ted.2014.2318277 |
0.387 |
|
2014 |
Xu K. Corrections to “On the Design and Optimization of Three-Terminal Light-Emitting Device in Silicon CMOS Technology” [Jul/Aug 14 8201208] Ieee Journal of Selected Topics in Quantum Electronics. 20: 422-422. DOI: 10.1109/Jstqe.2014.2318271 |
0.347 |
|
2014 |
Xu K. On the Design and Optimization of Three-Terminal Light-Emitting Device in Silicon CMOS Technology Ieee Journal On Selected Topics in Quantum Electronics. 20. DOI: 10.1109/Jstqe.2013.2293400 |
0.398 |
|
2013 |
Xu K. Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs. Applied Optics. 52: 6669-75. PMID 24085165 DOI: 10.1364/Ao.52.006669 |
0.352 |
|
2013 |
Li W, Li G, Sun J, Zou R, Xu K, Sun Y, Chen Z, Yang J, Hu J. Hierarchical heterostructures of MnO₂ nanosheets or nanorods grown on Au-coated Co₃O₄ porous nanowalls for high-performance pseudocapacitance. Nanoscale. 5: 2901-8. PMID 23450437 DOI: 10.1039/c3nr34140b |
0.303 |
|
2013 |
Xu K, Li G. Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology Journal of Nanophotonics. 7: 73082-73082. DOI: 10.1117/1.Jnp.7.073082 |
0.497 |
|
2013 |
Xu K, Li GP. A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology Journal of Applied Physics. 113: 103106. DOI: 10.1063/1.4795170 |
0.393 |
|
2012 |
Li G, Liu Y, Li D, Zhang L, Xu K. A comparative study on structure-property elucidation of P3/4HB and PEG-based block polyurethanes. Journal of Biomedical Materials Research. Part A. 100: 2319-29. PMID 22529029 DOI: 10.1002/jbm.a.34173 |
0.31 |
|
2012 |
Xu K, Li GP. A Three-Terminal Silicon-PMOSFET-Like Light-Emitting Device (LED) for Optical Intensity Modulation Ieee Photonics Journal. 4: 2159-2168. DOI: 10.1109/Jphot.2012.2224101 |
0.374 |
|
2011 |
Li G, Li P, Qiu H, Li D, Su M, Xu K. Synthesis, characterizations and biocompatibility of alternating block polyurethanes based on P3/4HB and PPG-PEG-PPG. Journal of Biomedical Materials Research. Part A. 98: 88-99. PMID 21538829 DOI: 10.1002/jbm.a.33100 |
0.309 |
|
2009 |
Pan J, Li G, Chen Z, Chen X, Zhu W, Xu K. Alternative block polyurethanes based on poly(3-hydroxybutyrate-co-4-hydroxybutyrate) and poly(ethylene glycol). Biomaterials. 30: 2975-84. PMID 19230967 DOI: 10.1016/j.biomaterials.2009.02.005 |
0.309 |
|
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