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Marshall I. Nathan - Publications

Affiliations: 
University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter Physics
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44 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Liu Y, Kauser MZ, Schroepfer DD, Ruden PP, Xie J, Moon YT, Onojima N, Morko̧ H, Son KA, Nathan MI. Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices Journal of Applied Physics. 99. DOI: 10.1063/1.2200742  0.303
2006 Hassan Z, Lee YC, Ng SS, Yam FK, Liu Y, Rang Z, Kauser MZ, Ruden PP, Nathan MI. AlGaN metal-semiconductor-metal structure for pressure sensing applications Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2287-2290. DOI: 10.1002/Pssc.200565155  0.352
2005 Rang Z, Nathan MI, Ruden PP, Podzorov V, Gershenson ME, Newman CR, Frisbie CD. Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1875761  0.346
2005 Albrecht JD, Van Nostrand JE, Claflin B, Liu Y, Nathan MI, Ruden PP. Electrical and magnetic characteristics of MBE-grown GaMnN Journal of Superconductivity and Novel Magnetism. 18: 69-73. DOI: 10.1007/S10948-005-2152-X  0.331
2004 Rang Z, Nathan MI, Ruden PP, Chesterfield R, Frisbie CD. Hydrostatic-pressure dependence of organic thin-film transistor current versus voltage characteristics Applied Physics Letters. 85: 5760-5762. DOI: 10.1063/1.1829388  0.358
2004 Jin Y, Rang Z, Nathan MI, Paul Ruden P, Newman CR, Daniel Frisbie C. Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer Applied Physics Letters. 85: 4406-4408. DOI: 10.1063/1.1814802  0.32
2004 Liu Y, Kauser MZ, Nathan MI, Ruden PP, Dogan S, Morkoç H, Park SS, Lee KY. Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN Applied Physics Letters. 84: 2112-2114. DOI: 10.1063/1.1689392  0.393
2002 Liu Y, Kauser MZ, Nathan MI, Ruden PP, Dabiran AM, Hertog B, Chow PP. Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer Applied Physics Letters. 81: 3398-3400. DOI: 10.1063/1.1517713  0.44
2001 Liu Y, Rang ZL, Fung AK, Cai C, Ruden PP, Nathan MI, Shtrikman H. Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction Applied Physics Letters. 79: 4586-4588. DOI: 10.1063/1.1427753  0.383
2001 Rang Z, Haraldsson A, Kim DM, Ruden PP, Nathan MI, Chesterfield RJ, Frisbie CD. Hydrostatic-pressure dependence of the photoconductivity of single-crystal pentacene and tetracene Applied Physics Letters. 79: 2731-2733. DOI: 10.1063/1.1410878  0.302
2000 Borton JE, Cai C, Nathan MI, Chow P, Van Hove JM, Wowchak A, Morkoc H. Bias-assisted photoelectrochemical etching of p-GaN at 300 K Applied Physics Letters. 77: 1227-1229. DOI: 10.1063/1.1289807  0.361
1999 Cai C, Nathan MI, Lim TH. Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current-voltage and capacitance-voltage measurements Applied Physics Letters. 74: 720-722. DOI: 10.1063/1.123102  0.414
1999 Fling AK, Cai C, Ruden PP, Nathan MI, Chen MY, McDermott BT, Sullivan GJ, Van Hove JM, Boutros K, Redwing J, Yang JW, Chen Q, Khan MA, Schaff W, Murphy M. Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-AlGaN/GaN heterostructures grown on sapphire substrates Materials Research Society Symposium - Proceedings. 572: 495-500.  0.333
1998 Fung AK, Albrecht JD, Nathan MI, Ruden PP, Shtrikman H. In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method Journal of Applied Physics. 84: 3741-3746. DOI: 10.1063/1.368552  0.39
1998 Fung AK, Albrecht JD, Nathan MI, Ruden PP, Shtrikman H. In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method Journal of Applied Physics. 84: 3741-3746.  0.307
1997 Fung AK, Cong L, Albrecht JD, Nathan MI, Ruden PP, Shtrikman H. Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors Journal of Applied Physics. 81: 502-505. DOI: 10.1063/1.364126  0.452
1997 Fung AK, Cong L, Albrecht JD, Nathan MI, Ruden PP, Shtrikman H. Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors Journal of Applied Physics. 81: 502-505.  0.378
1996 Cong L, Albrecht JD, Cohen D, Ruden PP, Nathan MI. Growth of (111)B‐oriented resonant tunneling devices in a gas source molecular beam epitaxy system Journal of Vacuum Science and Technology. 14: 924-927. DOI: 10.1116/1.580416  0.43
1996 Cong L, Albrecht JD, Nathan MI, Ruden PP. Piezoelectric effect in (001)‐ and (111)‐oriented double‐barrier resonant tunneling devices Journal of Applied Physics. 79: 7770-7774. DOI: 10.1063/1.362382  0.441
1996 Albrecht JD, Cong L, Ruden PP, Nathan MI, Smith DL. Resonant tunneling in (001)‐ and (111)‐oriented III–V double‐barrier heterostructures under transverse and longitudinal stresses Journal of Applied Physics. 79: 7763-7769. DOI: 10.1063/1.362381  0.45
1996 Lim TH, Miller TJ, Williamson F, Nathan MI. Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current-voltage and capacitance-voltage measurements Applied Physics Letters. 69: 1599-1601. DOI: 10.1063/1.117043  0.423
1996 Cong L, Albrecht JD, Nathan MI, Ruden PP. Piezoelectric effect in (001)- and (111)-oriented double-barrier resonant tunneling devices Journal of Applied Physics. 79: 7770-7774.  0.352
1996 Albrecht JD, Cong L, Ruden PP, Nathan MI, Smith DL. Resonant tunneling in (001)- and (111)-oriented III-V double-barrier heterostructures under transverse and longitudinal stresses Journal of Applied Physics. 79: 7763-7769.  0.375
1996 Cong L, Albrecht JD, Cohen D, Ruden PP, Nathan MI. Growth of (111)B-oriented resonant tunneling devices in a gas source molecular beam epitaxy system Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 924-927.  0.353
1995 Cong L, Albrecht JD, Nathan MI, Ruden PP, Smith DL. Piezoelectric effects in (001)‐oriented double barrier resonant tunneling structures Applied Physics Letters. 66: 1358-1360. DOI: 10.1063/1.113200  0.441
1995 Cong L, Albrecht JD, Nathan MI, Ruden PP, Smith DL. Piezoelectric effects in (001)-oriented double barrier resonant tunneling structures Applied Physics Letters. 1358.  0.372
1995 Lim TH, Miller TJ, Williamson F, Nathan MI. Characterization of interface charge at Ga0.52In 0.48P/GaAs junctions using current-voltage and capacitance-voltage measurements Applied Physics Letters. 1599.  0.332
1993 Kim DM, Lee S, Nathan MI, Gopinath A, Williamson F, Beyzavi K, Ghiasi A. Minority electron mobility and lifetime in the p+GaAs base of AlGaAs/GaAs heterojunction bipolar transistors Applied Physics Letters. 62: 861-863. DOI: 10.1063/1.108547  0.351
1992 Dutta MB, Shen H, Pamulapati J, Chang WH, Stroscio MA, Zhang X, Kim DM, Chung KW, Ruden PP, Nathan MI. Direct measurement of the piezoelectric field and Fermi level pinning in [111]B grown InGaAs/GaAs heterostructures Semiconductors. 1678: 203-210. DOI: 10.1117/12.60457  0.358
1992 Wang Z, Chung KW, Miller T, Williamson F, Nathan MI. Uniaxial stress dependence of the properties of the DX center in n-Al 0.32Ga0.68As Journal of Applied Physics. 71: 1802-1806. DOI: 10.1063/1.351186  0.373
1992 Lu SS, Wu CC, Huang CC, Williamson F, Nathan MI. Dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor Applied Physics Letters. 60: 2138-2140. DOI: 10.1063/1.107062  0.392
1992 Shen H, Dutta M, Chang W, Moerkirk R, Kim DM, Chung KW, Ruden PP, Nathan MI, Stroscio MA. Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz-Keldysh oscillations Applied Physics Letters. 60: 2400-2402. DOI: 10.1063/1.106985  0.356
1991 Costa JC, Miller TJ, Bernhardt BA, Abid Z, Williamson F, Nathan MI. A Low-Gate-Leakage-Current GaAs MESFET with a Thin Epitaxial Silicon Layer Ieee Electron Device Letters. 12: 324-326. DOI: 10.1109/55.82075  0.399
1991 Costa JC, Miller TJ, Williamson F, Nathan MI. Unpinned GaAs Schottky barriers with an epitaxial silicon layer Journal of Applied Physics. 70: 2173-2184. DOI: 10.1063/1.349456  0.391
1991 Lu SS, Nathan MI, Meng CC. Uniaxial stress dependence of the current-voltage characteristics of n-type AlAs/GaAs/AlAs tunnel diodes at 77 K Journal of Applied Physics. 69: 525-527. DOI: 10.1063/1.347699  0.408
1991 Lu SS, Meng CC, Williamson F, Nathan MI. Uniaxial stress effects on the AlAs/GaAs double-barrier heterostructures Journal of Applied Physics. 69: 8241-8246. DOI: 10.1063/1.347430  0.373
1991 Wang Z, Miller T, Williamson F, Nathan MI. Observation of an overshoot in the capture transient of the DX center in N-Al0.32Ga0.68As Applied Physics Letters. 59: 307-309. DOI: 10.1063/1.105579  0.306
1991 Chung KW, Wang Z, Costa JC, Williamson F, Ruden PP, Nathan MI. Barrier height change in GaAs Schottky diodes induced by piezoelectric effect Applied Physics Letters. 59: 1191-1193. DOI: 10.1063/1.105499  0.415
1991 Wang Z, Chung KW, Miller T, Williamson F, Nathan MI. Occupancy of the DX center in n-Al0.32Ga0.68As under uniaxial stress Applied Physics Letters. 58: 2366-2368. DOI: 10.1063/1.104873  0.381
1991 Lu SS, Lee K, Nathan MI, Wright SL. Resonant indirect Fowler-Nordheim tunneling in Al0.8Ga 0.2As barrier Applied Physics Letters. 58: 266-268. DOI: 10.1063/1.104684  0.328
1991 Costa JC, Williamson F, Miller TJ, Beyzavi K, Nathan MI, Mui DSL, Strite S, Morkoç H. Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer Applied Physics Letters. 58: 382-384. DOI: 10.1063/1.104641  0.378
1990 Lu SS, Lee KR, Lee KH, Nathan MI, Heiblum M, Wright SL. Theoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers Journal of Applied Physics. 67: 6360-6367. DOI: 10.1063/1.345157  0.345
1989 Lu SS, Lee K, Nathan MI, Heiblum M, Wright SL. Uniaxial stress dependence of current-voltage characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers Applied Physics Letters. 55: 1336-1338. DOI: 10.1063/1.101648  0.312
1983 Nathan MI, Heiblum M, Klem J, Morkoc H. PERSISTENT PHOTOCONDUCTIVITY IN AlGaAs-GaAs HETEROSTRUCTURES Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena. 2: 167-169. DOI: 10.1116/1.582769  0.3
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