Hongxi Liu - Publications

Affiliations: 
Hokkaido University, Sapporo-shi, Hokkaidō, Japan 
Area:
spintronics

13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Hu B, Moges K, Honda Y, Liu HX, Uemura T, Yamamoto M, Inoue JI, Shirai M. Temperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic C o2MnSi electrodes Physical Review B - Condensed Matter and Materials Physics. 94. DOI: 10.1103/Physrevb.94.094428  0.32
2016 Moges K, Honda Y, Liu H, Uemura T, Yamamoto M, Miura Y, Shirai M. Enhanced half-metallicity of off-stoichiometric quaternary Heusler alloy Co-2(Mn, Fe)Si investigated through saturation magnetization and tunneling magnetoresistance Physical Review B. 93. DOI: 10.1103/Physrevb.93.134403  0.313
2016 Fetzer R, Liu HX, Stadtmüller B, Uemura T, Yamamoto M, Aeschlimann M, Cinchetti M. Impact of CoFe buffer layers on the structural and electronic properties of the Co2MnSi/MgO interface Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/19/195002  0.34
2015 Fetzer R, Ouardi S, Honda Y, Liu HX, Chadov S, Balke B, Ueda S, Suzuki M, Uemura T, Yamamoto M, Aeschlimann M, Cinchetti M, Fecher GH, Felser C. Spin-resolved low-energy and hard x-ray photoelectron spectroscopy of off-stoichiometric Co2MnSi Heusler thin films exhibiting a record TMR Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/16/164002  0.327
2015 Liu H, Kawami T, Moges K, Uemura T, Yamamoto M, Shi F, Voyles PM. Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions Journal of Physics D: Applied Physics. 48: 164001. DOI: 10.1088/0022-3727/48/16/164001  0.307
2014 Li G, Honda Y, Liu H, Matsuda K, Arita M, Uemura T, Yamamoto M, Miura Y, Shirai M, Saito T, Shi F, Voyles PM. Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratio Physical Review B. 89. DOI: 10.1103/Physrevb.89.014428  0.305
2014 Ebina Y, Akiho T, Liu H, Yamamoto M, Uemura T. Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties Applied Physics Letters. 104: 172405. DOI: 10.1063/1.4873720  0.309
2013 Akiho T, Shan J, Liu H, Matsuda K, Yamamoto M, Uemura T. Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source Physical Review B. 87: 235205. DOI: 10.1103/Physrevb.87.235205  0.302
2012 Honda Y, Liu H, Matsuda K, Uemura T, Yamamoto M. Temperature dependence of spin-dependent tunneling resistances of MgO-buffered Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.K-6-4  0.324
2012 Liu H, Honda Y, Matsuda K, Arita M, Uemura T, Yamamoto M. Highly Spin-Polarized Tunneling in Epitaxial Magnetic Tunnel Junctions with a Co2MnSi Electrode and a MgO Barrier with Improved Interfacial Structural Properties Japanese Journal of Applied Physics. 51: 93004. DOI: 10.1143/Jjap.51.093004  0.361
2012 Li G, Taira T, Liu H, Matsuda K, Uemura T, Yamamoto M. Fabrication of Fully Epitaxial CoFe/MgO/CoFe Magnetic Tunnel Junctions on Ge(001) Substrates via a MgO Interlayer Japanese Journal of Applied Physics. 51: 93003. DOI: 10.1143/Jjap.51.093003  0.348
2012 Liu H, Honda Y, Taira T, Matsuda K, Arita M, Uemura T, Yamamoto M. Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling Applied Physics Letters. 101: 132418. DOI: 10.1063/1.4755773  0.347
2009 Ishikawa T, Liu H, Taira T, Matsuda K, Uemura T, Yamamoto M. Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions Applied Physics Letters. 95: 232512. DOI: 10.1063/1.3272926  0.316
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