| Year |
Citation |
Score |
| 2021 |
Poudel D, Belfore B, Ashrafee T, Karki S, Rajan G, Rockett A, Marsillac S. Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se Thin Films. Materials (Basel, Switzerland). 14. PMID 34203128 DOI: 10.3390/ma14133596 |
0.308 |
|
| 2020 |
Poudel D, Karki S, Belfore B, Rajan G, Atluri SS, Soltanmohammad S, Rockett A, Marsillac S. Degradation Mechanism Due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se2 Solar Cells Energies. 13: 4545. DOI: 10.3390/En13174545 |
0.379 |
|
| 2020 |
Karki S, Marsillac S, Deitz JI, Rajan G, Soltanmohammad S, Poudel D, Belfore B, Bhandari G, Grassman TJ, Rockett A. Impact of Water Ingress on Molybdenum Thin Films and Its Effect on Cu(In,Ga)Se 2 Solar Cells Ieee Journal of Photovoltaics. 10: 696-702. DOI: 10.1109/Jphotov.2019.2959947 |
0.422 |
|
| 2019 |
Wang J, Rockett A. Simulating diffusion on Si(001) 2 x 1 surfaces using a modified interatomic potential. Physical Review. B, Condensed Matter. 43: 12571-12579. PMID 9997059 DOI: 10.1103/Physrevb.43.12571 |
0.391 |
|
| 2019 |
Karki S, Paul P, Deitz JI, Poudel D, Rajan G, Belfore B, Danilov EO, Castellano FN, Grassman TJ, Arehart A, Rockett A, Marsillac S. Degradation Mechanism in Cu(In,Ga)Se2 Material and Solar Cells Due to Moisture and Heat Treatment of the Absorber Layer Ieee Journal of Photovoltaics. 9: 1138-1143. DOI: 10.1109/Jphotov.2019.2912707 |
0.41 |
|
| 2019 |
Rajan G, Belfore B, Karki S, Poudel D, Kahoui H, Lanham N, Palmiotti E, Soltanmohammad S, Rockett A, Marsillac S. Impact of Post-Deposition Recrystallization by Alkali Fluorides on Cu(In,Ga)Se2Thin-Film Materials and Solar Cells Thin Solid Films. 690: 137526. DOI: 10.1016/J.Tsf.2019.137526 |
0.447 |
|
| 2019 |
Pogue EA, Sutrisno A, Johnson NE, Goetter MB, Jiang Z, Johnson NE, Shoemaker DP, Rockett AA. Phase stability and structural comparison of phases in the Cu-Zn-Sn-S system using solid-state NMR Solar Energy Materials and Solar Cells. 190: 37-48. DOI: 10.1016/J.Solmat.2018.10.007 |
0.337 |
|
| 2018 |
Pekarek RT, Kearney K, Simon BM, Ertekin E, Rockett AA, Rose MJ. Identifying Charge Transfer Mechanisms across Semiconductor Heterostructures via Surface Dipole Modulation and Multiscale Modeling. Journal of the American Chemical Society. PMID 30281296 DOI: 10.1021/Jacs.8B05057 |
0.36 |
|
| 2018 |
Kearney K, Iyer A, Rockett A, Staykov A, Ertekin E. Multiscale Computational Design of Functionalized Photocathodes for H2 Generation. Journal of the American Chemical Society. 140: 50-53. PMID 29271201 DOI: 10.1021/Jacs.7B10373 |
0.346 |
|
| 2018 |
Pogue EA, Paris M, Sutrisno A, Lafond A, Johnson N, Shoemaker DP, Rockett AA. Identifying Short-Range Disorder in Crystalline Bulk Cu2SnS3 Phases: A Solid-State Nuclear Magnetic Resonance Spectroscopic Investigation Chemistry of Materials. 30: 6624-6635. DOI: 10.1021/Acs.Chemmater.8B01182 |
0.32 |
|
| 2018 |
Palmiotti E, Johnston S, Gerber A, Guthrey H, Rockett A, Mansfield L, Silverman TJ, Al-Jassim M. Identification and analysis of partial shading breakdown sites in CuIn x Ga (1-x) Se 2 modules Solar Energy. 161: 1-5. DOI: 10.1016/J.Solener.2017.12.019 |
0.349 |
|
| 2017 |
Kearney K, Rockett A, Ertekin E. Computational insights into charge transfer across functionalized semiconductor surfaces. Science and Technology of Advanced Materials. 18: 681-692. PMID 31001363 DOI: 10.1080/14686996.2017.1370962 |
0.331 |
|
| 2017 |
Varley J, He X, Rockett AA, Lordi V. The stability of Cd1-xZnxOyS1-y quaternary alloys assessed with first-principles calculations. Acs Applied Materials & Interfaces. PMID 28176522 DOI: 10.1021/Acsami.6B14415 |
0.367 |
|
| 2017 |
Pogue EA, Goetter M, Rockett A. Reaction kinetics of Cu 2-x S, ZnS, and SnS 2 to form Cu 2 ZnSnS 4 and Cu 2 SnS 3 studied using differential scanning calorimetry Mrs Advances. 2: 3181-3186. DOI: 10.1557/Adv.2017.384 |
0.323 |
|
| 2017 |
Rockett AA. Surface analysis of chalcogenide semiconductors used in photovoltaics (Conference Presentation) Proceedings of Spie. 10099. DOI: 10.1117/12.2256914 |
0.4 |
|
| 2017 |
Kim N, Martin PP, Rockett AA, Ertekin E. First-Principle Study of the Electronic Structure and Stability of Reconstructed AgInSe2 (112) Polar Surfaces Ieee Journal of Photovoltaics. 7: 1781-1788. DOI: 10.1109/Jphotov.2017.2754061 |
0.433 |
|
| 2017 |
Karki S, Paul PK, Rajan G, Ashrafee T, Aryal K, Pradhan P, Collins RW, Rockett A, Grassman TJ, Ringel SA, Arehart AR, Marsillac S. In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells Ieee Journal of Photovoltaics. 7: 665-669. DOI: 10.1109/Jphotov.2016.2637659 |
0.451 |
|
| 2017 |
Varley JB, Lordi V, He X, Rockett A. Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics Physical Review Materials. 1: 25403. DOI: 10.1103/Physrevmaterials.1.025403 |
0.374 |
|
| 2017 |
Forest RV, McCandless BE, He X, Rockett AA, Eser E, Dobson KD, Birkmire RW. Diffusion of sodium in single crystal CuInSe2 Journal of Applied Physics. 121: 245102. DOI: 10.1063/1.4986635 |
0.347 |
|
| 2017 |
Kearney KL, Iyer A, Rockett AA, Staykov A, Ertekin E. Effect of Surface Coverage and Composition on the Stability and Interfacial Dipole of Functionalized Silicon Journal of Physical Chemistry C. 121: 11312-11318. DOI: 10.1021/Acs.Jpcc.7B00791 |
0.345 |
|
| 2017 |
He X, Paulauskas T, Ercius P, Varley J, Bailey J, Zapalac G, Poplavskyy D, Mackie N, Bayman A, Spaulding D, Klie R, Lordi V, Rockett A. Cd doping at PVD-CdS/CuInGaSe2 heterojunctions Solar Energy Materials and Solar Cells. 164: 128-134. DOI: 10.1016/J.Solmat.2017.01.043 |
0.352 |
|
| 2017 |
Ibdah A, Koirala P, Aryal P, Pradhan P, Marsillac S, Rockett AA, Podraza NJ, Collins RW. Spectroscopic ellipsometry for analysis of polycrystalline thin-film photovoltaic devices and prediction of external quantum efficiency Applied Surface Science. 421: 601-607. DOI: 10.1016/J.Apsusc.2016.12.236 |
0.406 |
|
| 2016 |
Tuteja M, Mei AB, Palekis V, Hall A, MacLaren S, Ferekides CS, Rockett AA. CdCl2 Treatment-Induced Enhanced Conductivity in CdTe Solar Cells Observed Using Conductive Atomic Force Microscopy. The Journal of Physical Chemistry Letters. 7: 4962-4967. PMID 27973863 DOI: 10.1021/Acs.Jpclett.6B02399 |
0.588 |
|
| 2016 |
Tuteja M, Koirala P, Soares J, Collins R, Rockett A. Low temperature photoluminescence spectroscopy studies on sputter deposited CdS/CdTe junctions and solar cells Journal of Materials Research. 31: 186-194. DOI: 10.1557/Jmr.2015.399 |
0.356 |
|
| 2016 |
Johnson N, Aydogan P, Suzer S, Rockett A. Electrical properties from photoinduced charging on Cd-doped (100) surfaces of CuInSe2 epitaxial thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4945105 |
0.431 |
|
| 2016 |
He X, Varley J, Ercius P, Erikson T, Bailey J, Zapalac G, Poplavskyy D, Mackie N, Bayman A, Lordi V, Rockett A. Intermixing and Formation of Cu-Rich Secondary Phases at Sputtered CdS/CuInGaSe2Heterojunctions Ieee Journal of Photovoltaics. 6: 1308-1315. DOI: 10.1109/Jphotov.2016.2589362 |
0.393 |
|
| 2016 |
Varley JB, Lordi V, He X, Rockett A. First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics Journal of Applied Physics. 119. DOI: 10.1063/1.4939656 |
0.44 |
|
| 2016 |
Mei AB, Tuteja M, Sangiovanni D, Haasch RT, Rockett A, Hultman L, Petrov I, Greene JE. Growth, nanostructure, and optical properties of epitaxial VNx/MgO(001) (0.80 ≤ x ≤ 1.00) layers deposited by reactive magnetron sputtering Journal of Materials Chemistry C. 4: 7924-7938. DOI: 10.1039/C6Tc02289H |
0.49 |
|
| 2016 |
Kim HJ, Kearney KL, Le LH, Haber ZJ, Rockett AA, Rose MJ. Charge-Transfer through Ultrathin Film TiO2onn-Si(111) Photoelectrodes: Experimental and Theoretical Investigation of Electric Field-Enhanced Transport with a Nonaqueous Redox Couple The Journal of Physical Chemistry C. 120: 25697-25708. DOI: 10.1021/Acs.Jpcc.6B08096 |
0.363 |
|
| 2016 |
Tuteja M, Koirala P, Palekis V, Maclaren S, Ferekides CS, Collins RW, Rockett AA. Direct Observation of CdCl2 Treatment Induced Grain Boundary Carrier Depletion in CdTe Solar Cells Using Scanning Probe Microwave Reflectivity Based Capacitance Measurements Journal of Physical Chemistry C. 120: 7020-7024. DOI: 10.1021/Acs.Jpcc.6B00874 |
0.407 |
|
| 2016 |
Koirala P, Li J, Yoon HP, Aryal P, Marsillac S, Rockett AA, Podraza NJ, Collins RW. Through-the-glass spectroscopic ellipsometry for analysis of CdTe thin-film solar cells in the superstrate configuration Progress in Photovoltaics: Research and Applications. DOI: 10.1002/Pip.2759 |
0.343 |
|
| 2015 |
Ashrafee T, Aryal K, Rajan G, Karki S, Ranjan V, Rockett A, Collins RW, Ayala O, Marsillac S. Effect of substrate temperature on sputtered molybdenum film as a back contact for Cu(In,Ga)Se2 solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355907 |
0.33 |
|
| 2015 |
Mei AB, Hellman O, Schlepütz CM, Rockett A, Chiang TC, Hultman L, Petrov I, Greene JE. Reflection thermal diffuse x-ray scattering for quantitative determination of phonon dispersion relations Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.174301 |
0.403 |
|
| 2015 |
Mei AB, Hellman O, Wireklint N, Schlepütz CM, Sangiovanni DG, Alling B, Rockett A, Hultman L, Petrov I, Greene JE. Dynamic and structural stability of cubic vanadium nitride Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.054101 |
0.422 |
|
| 2015 |
Tuteja M, Koirala P, Maclaren S, Collins R, Rockett A. Direct observation of electrical properties of grain boundaries in sputter-deposited CdTe using scan-probe microwave reflectivity based capacitance measurements Applied Physics Letters. 107. DOI: 10.1063/1.4932952 |
0.393 |
|
| 2015 |
Yakushev MV, Forbes I, Mudryi AV, Grossberg M, Krustok J, Beattie NS, Moynihan M, Rockett A, Martin RW. Optical spectroscopy studies of Cu2ZnSnSe4thin films Thin Solid Films. 582: 154-157. DOI: 10.1016/J.Tsf.2014.09.010 |
0.355 |
|
| 2015 |
Peña Martin P, Lyding J, Rockett A. Scanning tunneling spectroscopy of epitaxial silver indium diselenide Surface Science. 636: 8-12. DOI: 10.1016/J.Susc.2015.01.012 |
0.31 |
|
| 2015 |
Téllez H, Druce J, Hall A, Ishihara T, Kilner J, Rockett A. Low energy ion scattering: Surface preparation and analysis of Cu(In,Ga)Se2 for photovoltaic applications Progress in Photovoltaics. 23: 1219-1227. DOI: 10.1002/Pip.2535 |
0.678 |
|
| 2014 |
Yang Z, Koirala P, Collins RW, Aryal K, Marsillac S, Rockett A. Transition metal nitride contacts for CdTe photovoltaics 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1735-1739. DOI: 10.1109/PVSC.2014.6925256 |
0.352 |
|
| 2014 |
Aryal K, Rajan G, Ashrafee T, Ranjan V, Li J, Rockett A, Collins RW, Marsillac S. Effect of selenium evaporation rate on ultrathin Cu(In,Ga)Se2 films 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 314-317. DOI: 10.1109/PVSC.2014.6924921 |
0.336 |
|
| 2014 |
He XQ, Brown G, Demirkan K, Mackie N, Lordi V, Rockett A. Microstructural and Chemical Investigation of PVD-CdS/PVD- CuIn1-x Gax Se2 Heterojunctions: A Transmission Electron Microscopy Study Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2014.2344752 |
0.384 |
|
| 2014 |
Yakushev MV, Rodina AV, Shuchalin GM, Seisian RP, Abdullaev MA, Rockett A, Zhivulko VD, Mudryi AV, Faugeras C, Martin RW. Landau levels of the C-exciton in CuInSe2 studied by magneto-transmission Applied Physics Letters. 105. DOI: 10.1063/1.4897995 |
0.354 |
|
| 2014 |
Mei AB, Wilson RB, Li D, Cahill DG, Rockett A, Birch J, Hultman L, Greene JE, Petrov I. Elastic constants, Poisson ratios, and the elastic anisotropy of VN(001), (011), and (111) epitaxial layers grown by reactive magnetron sputter deposition Journal of Applied Physics. 115. DOI: 10.1063/1.4881817 |
0.412 |
|
| 2014 |
House SD, Liu X, Rockett AA, Majzoub EH, Robertson IM. Characterization of the dehydrogenation process of LiBH4 confined in nanoporous carbon Journal of Physical Chemistry C. 118: 8843-8851. DOI: 10.1021/Jp4098205 |
0.323 |
|
| 2013 |
Mei AB, Howe BM, Zhang C, Sardela M, Eckstein JN, Hultman L, Rockett A, Petrov I, Greene JE. Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 061516. DOI: 10.1116/1.4825349 |
0.491 |
|
| 2013 |
Aquino A, Rockett A. Chemical reactions at CdS heterojunctions with CuInSe2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4775341 |
0.377 |
|
| 2013 |
Aryal K, Erkaya Y, Rajan G, Ashrafee T, Rockett A, Collins RW, Marsillac S. Comparative study of ZnS thin films deposited by CBD and ALD as a buffer layer for CIGS solar cell Conference Record of the Ieee Photovoltaic Specialists Conference. 1101-1104. DOI: 10.1109/PVSC.2013.6744333 |
0.322 |
|
| 2013 |
Mei AB, Rockett A, Hultman L, Petrov I, Greene JE. Electron/phonon coupling in group-IV transition-metal and rare-earth nitrides Journal of Applied Physics. 114: 193708. DOI: 10.1063/1.4832778 |
0.345 |
|
| 2013 |
Hall AJ, Hebert D, Shah AB, Bettge M, Rockett AA. Nanostructured light-absorbing crystalline CuIn(1-x)Ga xSe2 thin films grown through high flux, low energy ion irradiation Journal of Applied Physics. 114. DOI: 10.1063/1.4823987 |
0.739 |
|
| 2013 |
Ye W, Min K, Peña Martin P, Rockett AA, Aluru NR, Lyding JW. Scanning tunneling spectroscopy and density functional calculation of silicon dangling bonds on the Si(100)-2 × 1:H surface Surface Science. 609: 147-151. DOI: 10.1016/J.Susc.2012.11.015 |
0.345 |
|
| 2012 |
Chitambar M, Wang Z, Liu Y, Rockett A, Maldonado S. Dye-sensitized photocathodes: efficient light-stimulated hole injection into p-GaP under depletion conditions. Journal of the American Chemical Society. 134: 10670-81. PMID 22734693 DOI: 10.1021/Ja304019N |
0.473 |
|
| 2012 |
Sezen H, Rockett AA, Suzer S. XPS investigation of a CdS-based photoresistor under working conditions: operando-XPS. Analytical Chemistry. 84: 2990-4. PMID 22369585 DOI: 10.1021/Ac300220U |
0.359 |
|
| 2012 |
Pea Martin P, Rockett AA, Lyding J. Growth mechanism and surface atomic structure of AgInSe 2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4728160 |
0.424 |
|
| 2012 |
Liu Y, Sun Y, Rockett A. An improved algorithm for solving equations for intra-band tunneling current in heterojunction solar cells Thin Solid Films. 520: 4947-4950. DOI: 10.1016/J.Tsf.2012.03.012 |
0.447 |
|
| 2012 |
Liu Y, Sun Y, Rockett A. A new simulation software of solar cells—wxAMPS Solar Energy Materials and Solar Cells. 98: 124-128. DOI: 10.1016/J.Solmat.2011.10.010 |
0.426 |
|
| 2012 |
Rockett A. Surface analysis of chalcopyrite materials for photovoltaics Progress in Photovoltaics. 20: 575-581. DOI: 10.1002/Pip.2205 |
0.427 |
|
| 2011 |
Abou-Ras D, Caballero R, Fischer CH, Kaufmann CA, Lauermann I, Mainz R, Mönig H, Schöpke A, Stephan C, Streeck C, Schorr S, Eicke A, Döbeli M, Gade B, Hinrichs J, ... ... Rockett AA, et al. Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 17: 728-51. PMID 21906418 DOI: 10.1017/S1431927611000523 |
0.391 |
|
| 2011 |
Wolden CA, Kurtin J, Baxter JB, Repins I, Shaheen SE, Torvik JT, Rockett AA, Fthenakis VM, Aydil ES. Photovoltaic manufacturing: Present status, future prospects, and research needs Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3569757 |
0.326 |
|
| 2011 |
Afshar M, Sadewasser S, Albert J, Lehmann S, Abou-Ras D, Marrón DF, Rockett AA, Räsänen E, Lux-Steiner MC. Chalcopyrite Semiconductors for Quantum Well Solar Cells Advanced Energy Materials. 1: 1109-1115. DOI: 10.1002/Aenm.201100362 |
0.361 |
|
| 2010 |
Ye W, Peña Martin PA, Kumar N, Daly SR, Rockett AA, Abelson JR, Girolami GS, Lyding JW. Direct writing of sub-5 nm hafnium diboride metallic nanostructures. Acs Nano. 4: 6818-24. PMID 20964393 DOI: 10.1021/Nn1018522 |
0.306 |
|
| 2010 |
Zhou Z, Zhao K, Rockett A. Growth and Optical Properties of Cd1-xZnxS Thin Films Japanese Journal of Applied Physics. 49: 81202. DOI: 10.1143/Jjap.49.081202 |
0.386 |
|
| 2010 |
Lei C, Duch M, Robertson IM, Rockett A. Effects of solution-grown CdS on Cu(InGa)Se2 grain boundaries Journal of Applied Physics. 108: 114908. DOI: 10.1063/1.3512966 |
0.412 |
|
| 2010 |
Mayer MA, Ruppalt LB, Hebert D, Lyding J, Rockett AA. Scanning tunneling microscopic analysis of Cu (In,Ga) Se2 epitaxial layers Journal of Applied Physics. 107. DOI: 10.1063/1.3304919 |
0.665 |
|
| 2010 |
Rockett AA. Current status and opportunities in chalcopyrite solar cells Current Opinion in Solid State & Materials Science. 14: 143-148. DOI: 10.1016/J.Cossms.2010.08.001 |
0.383 |
|
| 2009 |
Hebert DN, Soares JANT, Rockett AA. Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2 Thin Films Mrs Proceedings. 1165. DOI: 10.1557/Proc-1165-M03-05 |
0.439 |
|
| 2009 |
Johnson BR, Riley BJ, Sundaram SK, Crum JV, Henager CH, Zhang Y, Shutthanandan V, Seifert CE, Van Ginhoven RM, Chamberlin CE, Rockett AA, Hebert DN, Aquino AR. Synthesis and characterization of bulk, vitreous cadmium germanium arsenide Journal of the American Ceramic Society. 92: 1236-1243. DOI: 10.1111/J.1551-2916.2009.03001.X |
0.358 |
|
| 2008 |
Liao D, Rockett A. The structure and morphology of (112)-oriented Cu (In,Ga) Se2 epitaxial films Journal of Applied Physics. 104. DOI: 10.1063/1.3009961 |
0.804 |
|
| 2008 |
Hall AJ, Hebert D, Lei C, Rockett A, Siebentritt S. Epitaxial growth of very large grain bicrystalline Cu(In,Ga)Se2 thin films by a hybrid sputtering method Journal of Applied Physics. 103: 083540. DOI: 10.1063/1.2907446 |
0.651 |
|
| 2007 |
Siebentritt S, Augustin S, Papathanasiou N, Hebert D, Rockett A, Bläsing J, Lux-Steiner MC. Polarized Luminescence of Defects in CuGaSe2 Mrs Proceedings. 1012: 483-490. DOI: 10.1557/Proc-1012-Y13-01 |
0.555 |
|
| 2007 |
Siebentritt S, Eisenbarth T, Rockett A, Albert J, Schubert-Bischoff P, Lux-Steiner MC. Epitaxially grown single grain boundaries in chalcopyrites Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/1/016004 |
0.311 |
|
| 2006 |
Lei CH, Rockett A, Robertson IM, Papathanasiou N, Siebentritt S. Interface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu(In,Ga)Se2 thin films on GaAs Journal of Applied Physics. 100: 114915. DOI: 10.1063/1.2397282 |
0.46 |
|
| 2006 |
Lei C, Rockett A, Robertson IM, Shafarman WN, Beck M. Void formation and surface energies in Cu(InGa)Se 2 Journal of Applied Physics. 100. DOI: 10.1063/1.2357422 |
0.455 |
|
| 2005 |
Lei C, Li C, Rockett A, Robertson IM, Shafarman W. Application of Advanced Microstructural and Microchemical Microscopy Techniques to Chalcopyrite Solar Cells. Mrs Proceedings. 865. DOI: 10.1557/Proc-865-F4.3 |
0.406 |
|
| 2005 |
Cahill DG, Watanabe F, Rockett A, Vining CB. Thermal conductivity of epitaxial layers of dilute SiGe alloys Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.235202 |
0.335 |
|
| 2005 |
Yang L-, Chen GS, Rockett A. Surface polarities of sputtered epitaxial CuInSe2 and Cu1In3Se5 thin films grown on GaAs (001) substrates Applied Physics Letters. 86: 201907. DOI: 10.1063/1.1929071 |
0.446 |
|
| 2005 |
Rockett A. The effect of Na in polycrystalline and epitaxial single-crystal CuIn1−xGaxSe2 Thin Solid Films. 480: 2-7. DOI: 10.1016/J.Tsf.2004.11.038 |
0.39 |
|
| 2003 |
Liao D, Rockett A. Electronic and Chemical Phenomena at Cu(In, Ga)Se 2 /CdS Heterojunctions and Their Implications for Photovoltaic Devices Mrs Proceedings. 763. DOI: 10.1557/Proc-763-B5.23 |
0.796 |
|
| 2003 |
Li CM, Lei CH, Robertson IM, Rockett A. Microstructural and Microchemical Analysis of Chalcopyrite Cu(In,Ga)Se 2 Films Mrs Proceedings. 763: 169-174. DOI: 10.1557/Proc-763-B4.2 |
0.409 |
|
| 2003 |
Liao D, Rockett A. Cu depletion at the CulnSe2 surface Applied Physics Letters. 82: 2829-2831. DOI: 10.1063/1.1570516 |
0.786 |
|
| 2003 |
Liao D, Rockett A. Cd doping at the CuinSe2/CdS heterojunction Journal of Applied Physics. 93: 9380-9382. DOI: 10.1063/1.1570500 |
0.757 |
|
| 2003 |
Rockett A, Liao D, Heath JT, Cohen JD, Strzhemechny YM, Brillson LJ, Ramanathan K, Shafarman WN. Near-surface defect distributions in Cu(In,Ga)Se2 Thin Solid Films. 431: 301-306. DOI: 10.1016/S0040-6090(03)00148-2 |
0.787 |
|
| 2003 |
Lundberg O, Lu J, Rockett A, Edoff M, Stolt L. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells Journal of Physics and Chemistry of Solids. 64: 1499-1504. DOI: 10.1016/S0022-3697(03)00127-6 |
0.439 |
|
| 2002 |
Kodambaka S, Petrova V, Khare SV, Gall D, Rockett A, Petrov I, Greene JE. Size-dependent detachment-limited decay kinetics of two-dimensional TiN islands on TiN(111). Physical Review Letters. 89: 176102. PMID 12398688 DOI: 10.1103/Physrevlett.89.176102 |
0.389 |
|
| 2002 |
Strzhemechny YM, Smith PE, Bradley ST, Liao DX, Rockett AA, Ramanathan K, Brillson LJ. Near-surface electronic defects and morphology of Culn1-xGaxSe2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2441-2448. DOI: 10.1116/1.1526357 |
0.414 |
|
| 2002 |
Heath JT, Cohen JD, Shafarman WN, Liao DX, Rockett AA. Effect of Ga content on defect states in CuIn1-xGa xSe2 photovoltaic devices Applied Physics Letters. 80: 4540-4542. DOI: 10.1063/1.1485301 |
0.319 |
|
| 2002 |
Liao D, Rockett A. Epitaxial growth of Cu(In,Ga)Se 2 on GaAs(110) Journal of Applied Physics. 91: 1978-1983. DOI: 10.1063/1.1434549 |
0.8 |
|
| 2000 |
Rockett A. The Electronic effects of point defects in Cu(InxGa1−x)Se2 Thin Solid Films. 361: 330-337. DOI: 10.1016/S0040-6090(99)00766-X |
0.391 |
|
| 2000 |
Rockett A, Jergel M, Melendez-Lira M, Lopez-Lopez M, Falcony C, Zelaya O. Proceedings of the 11th International Conference on Thin Films, August 30 through September 3, 1999, Cancun, Mexico Thin Solid Films. 373. DOI: 10.1016/S0040-6090(00)01077-4 |
0.314 |
|
| 2000 |
Rockett A, Britt JS, Gillespie T, Marshall C, Jassim MMA, Hasoon F, Matson R, Basol B. Na in selenized Cu(In,Ga)Se2 on Na-containing and Na-free glasses: distribution, grain structure, and device performances Thin Solid Films. 372: 212-217. DOI: 10.1016/S0040-6090(00)01028-2 |
0.384 |
|
| 1999 |
Wang Z, Diatezua DM, Park DG, Chen Z, Morkoç H, Rockett A. Plasma nitridation of thin Si layers for GaAs dielectrics Journal of Vacuum Science & Technology B. 17: 2034-2039. DOI: 10.1116/1.590867 |
0.368 |
|
| 1999 |
Rockett A, Granath K, Asher S, Al Jassim M, Hasoon F, Matson R, Basol B, Kapur V, Britt J, Gillespie T, Marshall C. Na incorporation in Mo and CuInSe2 from production processes Solar Energy Materials and Solar Cells. 59: 255-264. DOI: 10.1016/S0927-0248(99)00026-4 |
0.358 |
|
| 1999 |
Bodegård M, Granath K, Stolt L, Rockett A. The behaviour of Na implanted into Mo thin films during annealing Solar Energy Materials and Solar Cells. 58: 199-208. DOI: 10.1016/S0927-0248(98)00203-7 |
0.389 |
|
| 1998 |
Diatezua DM, Wang Z, Park D, Chen Z, Rockett A, Morkoc H. Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure Journal of Vacuum Science & Technology B. 16: 507-510. DOI: 10.1116/1.590300 |
0.399 |
|
| 1998 |
Suski T, Jun J, Leszczyński M, Teisseyre H, Strite S, Rockett A, Pelzmann A, Kamp M, Ebeling KJ. Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing Journal of Applied Physics. 84: 1155-1157. DOI: 10.1063/1.368118 |
0.355 |
|
| 1998 |
Schroeder DJ, Hernandez JL, Berry GD, Rockett AA. Hole transport and doping states in epitaxial CuIn1−xGaxSe2 Journal of Applied Physics. 83: 1519-1526. DOI: 10.1063/1.366860 |
0.387 |
|
| 1997 |
Schroeder DJ, Rockett AA. Electronic effects of sodium in epitaxial CuIn1−xGaxSe2 Journal of Applied Physics. 82: 4982-4985. DOI: 10.1063/1.366365 |
0.373 |
|
| 1997 |
Wang Z, Ramanath G, Allen LH, Rockett A, Doyle JP, Svensson BG. Kinetics of thin-film reactions of Cu/a-Ge bilayers Journal of Applied Physics. 82: 3281-3286. DOI: 10.1063/1.365635 |
0.393 |
|
| 1997 |
Nelson AJ, Berry G, Rockett A, Shuh DK, Carlisle JA, Sutherland DGJ, Terminello LJ. Observation of core-level binding energy shifts between (100) surface and bulk atoms of epitaxial CuInSe2 Applied Physics Letters. 70: 1873-1875. DOI: 10.1063/1.118717 |
0.375 |
|
| 1997 |
Park D, Chen Z, Diatezua DM, Wang Z, Rockett A, Morkoç H, Alterovitz SA. Thermal stability of Si3N4/Si/GaAs interfaces Applied Physics Letters. 70: 1263-1265. DOI: 10.1063/1.118547 |
0.35 |
|
| 1997 |
Theil JA, Kusano E, Rockett A. Vanadium reactive magnetron sputtering in mixed Ar/O2 discharges Thin Solid Films. 298: 122-129. DOI: 10.1016/S0040-6090(96)09147-X |
0.31 |
|
| 1996 |
Kylner A, Rockett A, Stolt L. Oxygen in Solution Grown CdS Films for Thin Film Solar Cells Solid State Phenomena. 533-540. DOI: 10.4028/Www.Scientific.Net/Ssp.51-52.533 |
0.363 |
|
| 1996 |
Schroeder DJ, Berry GD, Rockett AA. Gallium diffusion and diffusivity in CuInSe2 epitaxial layers Applied Physics Letters. 69: 4068-4070. DOI: 10.1063/1.117820 |
0.402 |
|
| 1995 |
Strite S, Epperlein PW, Dommann A, Rockett A, Broom RF. Properties of Zn implanted GaN Mrs Proceedings. 395: 795-800. DOI: 10.1557/Proc-395-795 |
0.326 |
|
| 1995 |
Ramanath G, Xiao HZ, Yang LC, Rockett A, Allen LH. Evolution of microstructure in nanocrystalline Mo‐Cu thin films during thermal annealing Journal of Applied Physics. 78: 2435-2440. DOI: 10.1063/1.360756 |
0.403 |
|
| 1995 |
Wang J, Drabold DA, Rockett A. Binding and diffusion of a Si adatom around the type a step on Si(001) c(4×2) Applied Physics Letters. 1954. DOI: 10.1063/1.113288 |
0.364 |
|
| 1995 |
Xiao HZ, Yang LC, Lai SL, Ma Z, Rockett A. Structural properties of metastable Cu-Mo solid solution thin films synthesized by magnetron sputtering Scripta Metallurgica Et Materialia. 32: 353-358. DOI: 10.1016/S0956-716X(99)80064-8 |
0.377 |
|
| 1995 |
Yang LC, Mao HZ, Rockett A, Shafarman WN, Birkmire RW. The growth by the hybrid sputtering and evaporation method and microstructural studies of CuInSe2 films Solar Energy Materials and Solar Cells. 36: 445-455. DOI: 10.1016/0927-0248(94)00192-8 |
0.442 |
|
| 1995 |
Wang J, Drabold DA, Rockett A. Binding and diffusion of a Si adatom around type B steps on Si(001) c(4 × 2) Surface Science. 344: 251-257. DOI: 10.1016/0039-6028(95)00806-3 |
0.346 |
|
| 1995 |
Tuttle JR, Sites JR, Delahoy A, Shafarman W, Basol B, Fonash S, Gray J, Menner R, Phillips J, Rockett A, Scofield J, Shapiro FR, Singh P, Suntharalingan V, Tarrant D, et al. Characterization and modeling of Cu(In, Ga)(S, Se)2-based photovoltaic devices: a laboratory and industrial perspective Progress in Photovoltaics. 3: 89-104. DOI: 10.1002/Pip.4670030202 |
0.337 |
|
| 1994 |
Lambrecht WR, Segall B, Strite S, Martin G, Agarwal A, Morkoç H, Rockett A. X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3d states in GaN. Physical Review. B, Condensed Matter. 50: 14155-14160. PMID 9975634 DOI: 10.1103/Physrevb.50.14155 |
0.33 |
|
| 1994 |
Xiao HZ, Lee NE, Powell RC, Ma Z, Chou LJ, Allen LH, Greene JE, Rockett A. Defect ordering in epitaxial α‐GaN(0001) Journal of Applied Physics. 76: 8195-8197. DOI: 10.1063/1.357873 |
0.494 |
|
| 1994 |
Xiao HZ, Yang LC, Rockett A. Structural, optical, and electrical properties of epitaxial chalcopyrite CuIn3Se5 films Journal of Applied Physics. 76: 1503-1510. DOI: 10.1063/1.357725 |
0.398 |
|
| 1994 |
Yang LC, Rockett A. Cu‐Mo contacts to CuInSe2 for improved adhesion in photovoltaic devices Journal of Applied Physics. 75: 1185-1189. DOI: 10.1063/1.356504 |
0.386 |
|
| 1994 |
Martin G, Strite S, Botchkarev A, Agarwal A, Rockett A, Morkoç H, Lambrecht WRL, Segall B. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy Applied Physics Letters. 65: 610-612. DOI: 10.1063/1.112247 |
0.375 |
|
| 1994 |
Patterson JK, Park BJ, Ritley K, Xiao HZ, Allen LH, Rockett A. Kinetics of Ni/a-Ge bilayer reactions Thin Solid Films. 253: 456-461. DOI: 10.1016/0040-6090(94)90366-2 |
0.367 |
|
| 1994 |
Rockett A, Abou-Elfotouh F, Albin D, Bode M, Ermer J, Klenk R, Lommasson T, Russell TWF, Tomlinson RD, Tuttle J, Stolt L, Walter T, Peterson TM. Structure and chemistry of CuInSe2 for solar cell technology: current understanding and recommendations Thin Solid Films. 237: 1-11. DOI: 10.1016/0040-6090(94)90228-3 |
0.362 |
|
| 1994 |
Rockett A. A Monte Carlo simulation of the growth of Si(001)2×1: datom/SA step interactions and growth mechanisms Surface Science. 312: 201-212. DOI: 10.1016/0039-6028(94)90818-4 |
0.327 |
|
| 1993 |
Zhang XJ, Xue G, Agarwal A, Tsu R, Hasan MA, Greene JE, Rockett A. Thermal Desorption of Ultraviolet-Ozone Oxidized Ge(001) for Substrate Cleaning Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2553-2561. DOI: 10.1116/1.578606 |
0.519 |
|
| 1993 |
Agarwal A, Patterson JK, Greene JE, Rockett A. Ultraviolet ozone induced oxidation of epitaxial Si1-xGe x(111) Applied Physics Letters. 63: 518-520. DOI: 10.1063/1.109991 |
0.404 |
|
| 1993 |
Lin ME, Strite S, Agarwal A, Salvador A, Zhou GL, Teraguchi N, Rockett A, Morkoç H. GaN grown on hydrogen plasma cleaned 6H‐SiC substrates Applied Physics Letters. 62: 702-704. DOI: 10.1063/1.108845 |
0.374 |
|
| 1992 |
Demirel AL, Strite S, Agarwal A, Ünlü MS, Morkoç H, Rockett A. Reduction of outdiffusion at the Ge/GaAs (100) interface by low temperature growth Journal of Vacuum Science & Technology B. 10: 664-667. DOI: 10.1116/1.586429 |
0.378 |
|
| 1991 |
Rockett A, Kiely CJ. Energetics of misfit- and threading-dislocation arrays in heteroepitaxial films. Physical Review. B, Condensed Matter. 44: 1154-1162. PMID 9999626 DOI: 10.1103/Physrevb.44.1154 |
0.395 |
|
| 1991 |
Kiely CJ, Pond RC, Kenshole G, Rockett A. A TEM study of the crystallography and defect structures of single crystal and polycrystalline copper indium diselenide Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 63: 1249-1273. DOI: 10.1080/01418619108205581 |
0.357 |
|
| 1991 |
Rockett A, Birkmire RW. CuInSe2 for photovoltaic applications Journal of Applied Physics. 70. DOI: 10.1063/1.349175 |
0.392 |
|
| 1991 |
Nelson AJ, Gebhard S, Kazmerski LL, Rockett A, Colavita E, Engelhardt M, Höchst H. Soft X-ray photoemission investigation of the CdS/CuInSe2 heterojunction interface Applied Surface Science. 419-424. DOI: 10.1016/0169-4332(91)90367-S |
0.388 |
|
| 1990 |
Nelson AJ, Gebhard S, Rockett A, Colavita E, Engelhardt M, Höchst H. Synchrotron-radiation photoemission study of CdS/CuInSe2 heterojunction formation. Physical Review. B, Condensed Matter. 42: 7518-7523. PMID 9994898 DOI: 10.1103/Physrevb.42.7518 |
0.36 |
|
| 1990 |
Strite S, Ünlü MS, Adomi K, Gao G‐, Agarwal A, Rockett A, Morkoç H, Li D, Nakamura Y, Otsuka N. GaAs/Ge/GaAs heterostructures by molecular beam epitaxy Journal of Vacuum Science & Technology B. 8: 1131-1140. DOI: 10.1116/1.584931 |
0.408 |
|
| 1990 |
Tseng B‐, Rockett A, Lommasson TC, Yang LC, Wert CA, Thornton JA. Chemical and structural characterization of physical‐vapor deposited CuInSe2 for solar cell applications Journal of Applied Physics. 67: 2637-2642. DOI: 10.1063/1.345471 |
0.407 |
|
| 1990 |
Rockett A. The influence of surface structure on growth of Si(001)2×1 from the vapor phase Surface Science. 227: 208-218. DOI: 10.1016/S0039-6028(05)80008-1 |
0.407 |
|
| 1990 |
Greene JE, Barnett SA, Sundgren J-, Rockett A. Low-Energy Ion/Surface Interactions during Film Growth from the Vapor Phase: Effects on Nucleation and Growth Kinetics, Defect Structure, and Elemental Incorporation Probabilities Nato Asi Series. Series E, Applied Sciences. 176: 281-311. DOI: 10.1007/978-94-009-1946-4_18 |
0.516 |
|
| 1989 |
Kiely CJ, Chyi J, Rockett A, Morkoç H. High Resolution Electron Microscopy Studies of MBE Grown InSb Layers on GaAs (100) Mrs Proceedings. 139. DOI: 10.1557/Proc-139-117 |
0.46 |
|
| 1989 |
Barnett SA, Rockett A, Kaspi R. Monte Carlo simulations of molecular beam epitaxy on Si(001) surfaces Journal of the Electrochemical Society. 136: 1132-1137. DOI: 10.1149/1.2096799 |
0.416 |
|
| 1989 |
Knall J, Sundgren J‐, Markert LC, Rockett A, Greene JE. Influence of the Si evaporation source on the incorporation of In during Si molecular‐beam epitaxy growth: A comparative study of magnetically and electrostatically‐focused electron‐gun evaporators Journal of Vacuum Science & Technology B. 7: 204-209. DOI: 10.1116/1.584717 |
0.441 |
|
| 1989 |
Kiely CJ, Chyi JI, Rockett A, Morkoç H. On the microstructure and interfacial structure of InSb layers grown on GaAs(100) by molecular beam epitaxy Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 60: 321-337. DOI: 10.1080/01418618908213865 |
0.402 |
|
| 1989 |
Hasan MA, Knall J, Barnett SA, Sundgren J, Markert LC, Rockett A, Greene JE. Incorporation of accelerated low‐energy (50–500 eV) In+ions in Si(100) films during growth by molecular‐beam epitaxy Journal of Applied Physics. 65: 172-179. DOI: 10.1063/1.342565 |
0.45 |
|
| 1989 |
Talieh H, Rockett A. Device-quality CuInSe2 produced by the hybrid process Solar Cells. 27: 321-329. DOI: 10.1016/0379-6787(89)90040-9 |
0.477 |
|
| 1989 |
Rockett A, Lommasson TC, Campos P, Yang LC, Talieh H. Growth of CuInSe2 by two magnetron sputtering techniques Thin Solid Films. 171: 109-123. DOI: 10.1016/0040-6090(89)90038-2 |
0.407 |
|
| 1988 |
Rockett A, Barnett SA. Summary Abstract: Monte Carlo simulations of the role of (2 x 1) reconstruction dimers and surface diffusion on the growth of Si (001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2039-2040. DOI: 10.1116/1.575596 |
0.334 |
|
| 1988 |
Motooka T, Rockett A, Fons P, Greene JE, Salaneck WR, Bergman R, Sundgren JE. Determination of the valence electronic structure of condensed trimethylaluminum by photoelectron spectroscopy and molecular‐orbital calculations Journal of Vacuum Science and Technology. 6: 3115-3119. DOI: 10.1116/1.575484 |
0.39 |
|
| 1988 |
Barnett SA, Rockett A. Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxy Surface Science. 198: 133-150. DOI: 10.1016/0039-6028(88)90476-1 |
0.42 |
|
| 1988 |
Salaneck WR, Bergman R, Sundgren J-, Rockett A, Motooka T, Greene JE. Adsorption of tri-methyl aluminum molecules on silicon Surface Science. 198: 461-472. DOI: 10.1016/0039-6028(88)90378-0 |
0.485 |
|
| 1987 |
Hirashita N, Noel J-, Rockett A, Markert L, Greene JE, flasan MA, Knall J, Ni W-, Sundgren J-. Indium Ion Doping During Si Molecular Beam Epitaxy Mrs Proceedings. 93: 3. DOI: 10.1557/Proc-93-3 |
0.395 |
|
| 1986 |
Rockett A. Summary Abstract: Si incorporation and segregation in Ga1−xAlxAs(100) films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4: 519. DOI: 10.1116/1.583414 |
0.354 |
|
| 1986 |
Rockett A, Knall J, Hassan MA, Sundgren J, Barnett SA, Greene JE. Summary Abstract: Thermal and accelerated (≤200 eV) In doping of Si(100) layers during molecular beam epitaxy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 900-901. DOI: 10.1116/1.574002 |
0.431 |
|
| 1986 |
Sundgren J‐, Rockett A, Greene JE, Helmersson U. Microstructural and microchemical characterization of hard coatings Journal of Vacuum Science and Technology. 4: 2770-2783. DOI: 10.1116/1.573678 |
0.381 |
|
| 1986 |
Rockett A, Klem J, Barnett SA, Greene JE, Morkoç H. Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular‐beam epitaxy Journal of Applied Physics. 59: 2777-2783. DOI: 10.1063/1.336987 |
0.472 |
|
| 1986 |
Greene J, Motooka T, Sundgren J, Rockett A, Gorbatkin S, Lubben D, Barnett S. A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth Journal of Crystal Growth. 79: 19-32. DOI: 10.1016/0022-0248(86)90411-2 |
0.505 |
|
| 1985 |
Rockett A, Knall J, Barnett SA, Sundgren JE, Greene JE. Dopant depth distributions as a function of growth temperature in In-doped (100)Si grown by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 855-859. DOI: 10.1116/1.573330 |
0.559 |
|
| 1985 |
Johansson BO, Sundgren J, Greene JE, Rockett A, Barnett SA. Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 3: 303-307. DOI: 10.1116/1.573255 |
0.362 |
|
| 1985 |
Greene JE, Barnett SA, Rockett A, Bajor G. Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques Applications of Surface Science. 22: 520-544. DOI: 10.1016/0378-5963(85)90184-9 |
0.526 |
|
| 1984 |
Rockett A, Barnett SA, Greene JE. LOW-ENERGY, ULTRAHIGH VACUUM, SOLID-METAL ION SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR BEAM EPITAXY Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2: 306-313. DOI: 10.1116/1.582814 |
0.408 |
|
| 1984 |
Barnett SA, Rockett A, Bajor G, Greene JE. Summary Abstract: Model calculations for thermal and accelerated beam doping in semiconductor films grown by molecular beam epitaxy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 2: 406-407. DOI: 10.1116/1.572753 |
0.421 |
|
| 1984 |
Knall J, Sundgren J, Greene JE, Rockett A, Barnett SA. Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction Applied Physics Letters. 45: 689-691. DOI: 10.1063/1.95358 |
0.53 |
|
| 1982 |
Rockett A, Drummond TJ, Greene JE, Morkoc H. Surface segregation model for Sn‐doped GaAs grown by molecular beam epitaxy Journal of Applied Physics. 53: 7085-7087. DOI: 10.1063/1.330013 |
0.494 |
|
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