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Sheng Tong, Ph.D. - Publications

Affiliations: 
2012 Materials Science University of Cincinnati, Cincinnati, OH 
Area:
Materials Science Engineering, Inorganic Chemistry
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25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Tong S. Size and temperature effects on dielectric breakdown of ferroelectric films Journal of Advanced Ceramics. 10: 181-186. DOI: 10.1007/s40145-020-0426-1  0.464
2018 Tong SK, Chi PW, Kung SH, Wei DH. Tuning bandgap and surface wettability of NiFe2O4 driven by phase transition. Scientific Reports. 8: 1338. PMID 29358660 DOI: 10.1038/s41598-018-19319-9  0.377
2016 Das S, Bera MK, Tong S, Narayanan B, Kamath G, Mane A, Paulikas AP, Antonio MR, Sankaranarayanan SK, Roelofs AK. A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials. Scientific Reports. 6: 28195. PMID 27323877 DOI: 10.1038/Srep28195  0.326
2016 Choi YY, Tong S, Ducharme S, Roelofs A, Hong S. Charge collection kinetics on ferroelectric polymer surface using charge gradient microscopy. Scientific Reports. 6: 25087. PMID 27138943 DOI: 10.1038/Srep25087  0.377
2013 Tong S, Ma B, Narayanan M, Liu S, Koritala R, Balachandran U, Shi D. Lead lanthanum zirconate titanate ceramic thin films for energy storage. Acs Applied Materials & Interfaces. 5: 1474-80. PMID 23373765 DOI: 10.1021/Am302985U  0.6
2013 Ma B, Liu S, Tong S, Narayanan M, Koritala RE, Hu Z, Balachandran U. Residual stress of (Pb0.92La0.08)(Zr 0.52Ti0.48)O3 films grown by a sol-gel process Smart Materials and Structures. 22. DOI: 10.1088/0964-1726/22/5/055019  0.558
2013 Ma B, Hu Z, Liu S, Tong S, Narayanan M, Koritala RE, Balachandran U. Temperature-dependent dielectric nonlinearity of relaxor ferroelectric Pb0.92La0.08Zr0.52Ti0.48O 3 thin films Applied Physics Letters. 102. DOI: 10.1063/1.4807665  0.463
2013 Liu S, Ma B, Narayanan M, Tong S, Koritala RE, Hu Z, Balachandran U. Dielectric properties of lead lanthanum zirconate titanate thin films with and without ZrO2 insertion layers Journal of Applied Physics. 113. DOI: 10.1063/1.4804170  0.491
2013 Narayanan M, Tong S, Liu S, Ma B, Balachandran U. Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields Applied Physics Letters. 102: 62906. DOI: 10.1063/1.4792529  0.418
2013 Tong S, Ma B, Narayanan M, Liu S, Balachandran U, Shi D. Dielectric behavior of lead lanthanum zirconate titanate thin films deposited on different electrodes/substrates Materials Letters. 106: 405-408. DOI: 10.1016/J.Matlet.2013.05.068  0.631
2013 Tong S, Narayanan M, Ma B, Liu S, Koritala RE, Balachandran U, Shi D. Effect of lanthanum content and substrate strain on structural and electrical properties of lead lanthanum zirconate titanate thin films Materials Chemistry and Physics. 140: 427-430. DOI: 10.1016/J.Matchemphys.2013.03.067  0.622
2013 Ma B, Chao S, Narayanan M, Liu S, Tong S, Koritala RE, Balachandran U. Dense PLZT films grown on nickel substrates by PVP-modified sol–gel method Journal of Materials Science. 48: 1180-1185. DOI: 10.1007/S10853-012-6857-5  0.456
2012 Ma B, Narayanan M, Liu S, Tong S, Balachandran U(. Development of High Dielectric Strength Ceramic Film Capacitors for Advanced Power Electronics Journal of Microelectronics and Electronic Packaging. 2012: 609-616. DOI: 10.4071/Isom-2012-Wa33  0.571
2012 Liu S, Ma B, Narayanan M, Tong S, Koritala R, Balachandran U. Microstructure and electrical properties of LaNiO3 thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O3 films on silicon and nickel substrates Journal of Vacuum Science and Technology. 30: 61505. DOI: 10.1116/1.4752084  0.571
2012 Narayanan M, Ma B, Tong S, Koritala R, Balachandran U. Electrical Properties of Pb0.92La0.08Zr0.52Ti0.48O3 Thin Films Grown on SrRuO3 Buffered Nickel and Silicon Substrates by Chemical Solution Deposition International Journal of Applied Ceramic Technology. 9: 45-51. DOI: 10.1111/J.1744-7402.2011.02693.X  0.522
2012 Narayanan M, Balachandran U, Stoupin S, Ma B, Tong S, Chao S, Liu S. Dielectric properties and spectroscopy of large-aspect-ratio ferroelectric thin-film heterostructures Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/33/335401  0.553
2012 Ma B, Liu S, Tong S, Narayanan M, Balachandran U(. Enhanced dielectric properties of Pb0.92La0.08 Zr0.52Ti0.48O3 films with compressive stress Journal of Applied Physics. 112: 114117. DOI: 10.1063/1.4768926  0.568
2012 Narayanan M, Tong S, Ma B, Liu S, Balachandran U. Modified Johnson model for ferroelectric lead lanthanum zirconate titanate at very high fields and below Curie temperature Applied Physics Letters. 100: 22907. DOI: 10.1063/1.3676668  0.401
2012 Narayanan M, Pan M, Liu S, Tong S, Hong S, Ma B, Balachandran U. Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films Rsc Advances. 2: 11901-11907. DOI: 10.1039/C2Ra20678A  0.472
2011 Narayanan M, Ma B, Koritala R, Tong S, Balachandran U. Chemical Solution Deposition of High-Quality SrRu O3 Thin-Film Electrodes and the Dielectric Properties of Integrated Lead Lanthanum Zirconate Titanate Films for Embedded Passives Additional Conferences (Device Packaging, Hitec, Hiten, and Cicmt). 2011: 000235-000240. DOI: 10.4071/CICMT-2011-WP22  0.544
2011 Narayanan M, Tong S, Koritala R, Ma B, Pol VG, Balachandran U. Sol−Gel Synthesis of High-Quality SrRuO3Thin-Film Electrodes Suppressing the Formation of Detrimental RuO2and the Dielectric Properties of Integrated Lead Lanthanum Zirconate Titanate Films Chemistry of Materials. 23: 106-113. DOI: 10.1021/Cm102136F  0.558
2011 Ma B, Tong S, Narayanan M, Liu S, Chao S, Balachandran U. Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils Materials Research Bulletin. 46: 1124-1129. DOI: 10.1016/J.Materresbull.2011.02.047  0.351
2011 Tong S, Narayanan M, Ma B, Koritala R, Liu S, Balachandran U(, Shi D. Effect of dead layer and strain on the diffuse phase transition of PLZT relaxor thin films Acta Materialia. 59: 1309-1316. DOI: 10.1016/J.Actamat.2010.10.063  0.622
2010 Ma B, Narayanan M, Tong S, Balachandran U. Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates Journal of Materials Science. 45: 151-157. DOI: 10.1007/S10853-009-3910-0  0.506
1991 Wang Y, Tao J, Tong S, Sun T, Zhang A, Feng S. The Oxidation Kinetics of Thin Polycrystalline Silicon Films Journal of the Electrochemical Society. 138: 214-219. DOI: 10.1149/1.2085542  0.374
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