Year |
Citation |
Score |
2021 |
Song N, Tong H, Ma J, Zhang J. Case Series of Laser Therapy of Eyelid Peripunctal Benign Tumor. Photobiomodulation, Photomedicine, and Laser Surgery. PMID 34597195 DOI: 10.1089/photob.2021.0007 |
0.415 |
|
2020 |
Tong H, Zhang J, Li C, Fu Y, Zhang T. 1064 nm Nd:YAG laser treatment of melanocytic nevi of the external auditory canal: a retrospective study of 15 cases. Lasers in Medical Science. PMID 32533471 DOI: 10.1007/s10103-020-03034-x |
0.435 |
|
2020 |
Hartensveld M, Melanson B, Zhang J. Ultraviolet Electrostatic Field Effect Light-Emitting Diode Ieee Photonics Journal. 12: 1-1. DOI: 10.1109/Jphot.2020.3020384 |
0.442 |
|
2020 |
Hartensveld M, Melanson B, Zhang J. Electrostatic Field Effect Light-Emitting Diode Ieee Photonics Journal. 12: 1-8. DOI: 10.1109/Jphot.2020.2992278 |
0.433 |
|
2020 |
Liu C, Zhang J. Physics of high-efficiency 240–260 nm deep-ultraviolet lasers and light-emitting diodes on AlGaN substrate Journal of Applied Physics. 127: 205702. DOI: 10.1063/1.5143723 |
0.429 |
|
2019 |
Wu J, Wu H, Wang Y, Chen Y, Guo B, Cao G, Wu X, Yu J, Wu J, Zhu D, Guo Y, Yuan H, Hu F, Zhang J. Tolerability and Pharmacokinetics of Contezolid at Therapeutic and Supratherapeutic Doses in Healthy Chinese Subjects, and Assessment of Contezolid Dosing Regimens Based on Pharmacokinetic/Pharmacodynamic Analysis. Clinical Therapeutics. PMID 31126694 DOI: 10.1016/j.clinthera.2019.04.025 |
0.472 |
|
2019 |
Zhang J, Wu K, Xu T, Wu J, Li P, Wang H, Wu H, Wu G. Epigallocatechin-3-gallate enhances the osteoblastogenic differentiation of human adipose-derived stem cells. Drug Design, Development and Therapy. 13: 1311-1321. PMID 31114166 DOI: 10.2147/DDDT.S192683 |
0.479 |
|
2019 |
Hartensveld M, Zhang J. Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor Ieee Electron Device Letters. 40: 427-430. DOI: 10.1109/Led.2019.2895846 |
0.364 |
|
2019 |
Hartensveld M, Liu C, Zhang J. Proposal and Realization of Vertical GaN Nanowire Static Induction Transistor Ieee Electron Device Letters. 40: 259-262. DOI: 10.1109/Led.2018.2886246 |
0.34 |
|
2019 |
Hartensveld M, Ouin G, Liu C, Zhang J. Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes Journal of Applied Physics. 126: 183102. DOI: 10.1063/1.5123171 |
0.372 |
|
2018 |
Ooi YK, Zhang J. Light Extraction Efficiency Analysis of Flip-Chip Ultraviolet Light-Emitting Diodes With Patterned Sapphire Substrate Ieee Photonics Journal. 10: 1-13. DOI: 10.1109/Jphot.2018.2847226 |
0.361 |
|
2018 |
Liu C, Zhang J. Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters Aip Advances. 8: 85125. DOI: 10.1063/1.5048597 |
0.41 |
|
2018 |
Liu C, Ooi YK, Islam SM, Xing H(, Jena D, Zhang J. 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes Applied Physics Letters. 112: 011101. DOI: 10.1063/1.5007835 |
0.409 |
|
2017 |
Ooi YK, Chowdhury RR, Zhang J. Investigation of light extraction efficiency comparison of AlGaN-based deep- and mid-ultraviolet flip-chip light-emitting diodes with patterned sapphire substrate Proceedings of Spie. 10098. DOI: 10.1117/12.2252794 |
0.414 |
|
2017 |
Ooi YK, Ugras C, Liu C, Hartensveld M, Gandhi S, Cormier D, Zhang J. Integration of 3D printed lens with InGaN light-emitting diodes with enhanced light extraction efficiency Proceedings of Spie. 10115: 1011508. DOI: 10.1117/12.2252734 |
0.364 |
|
2017 |
Liu C, Ooi YK, Islam SM, Xing HG, Jena D, Zhang J. Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes Proceedings of Spie. 10104. DOI: 10.1117/12.2252487 |
0.448 |
|
2017 |
Ooi YK, Liu C, Zhang J. Analysis of Polarization-Dependent Light Extraction and Effect of Passivation Layer for 230-nm AlGaN Nanowire Light-Emitting Diodes Ieee Photonics Journal. 9: 1-12. DOI: 10.1109/Jphot.2017.2710325 |
0.362 |
|
2017 |
Liu C, Ooi YK, Islam SM, Verma J, Xing H(, Jena D, Zhang J. Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes Applied Physics Letters. 110: 071103. DOI: 10.1063/1.4976203 |
0.414 |
|
2016 |
Liu C, Ooi YK, Zhang J. Large TE polarized optical gain from AlInN-delta-GaN quantum well for ultraviolet lasers Proceedings of Spie. 9767. DOI: 10.1117/12.2212923 |
0.399 |
|
2016 |
Liu C, Ooi YK, Zhang J. Proposal and physics of AlInN-delta-GaN quantum well ultraviolet lasers Journal of Applied Physics. 119: 83102. DOI: 10.1063/1.4942524 |
0.426 |
|
2015 |
Ooi YK, Zhang J. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates Aip Advances. 5: 57168. DOI: 10.1063/1.4922008 |
0.441 |
|
2013 |
Zhang J, Tansu N. Engineering of AlGaN-delta-GaN quantum-well gain media for mid- and deep-ultraviolet lasers Ieee Photonics Journal. 5. DOI: 10.1117/12.909165 |
0.618 |
|
2013 |
Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 19: 8400106-8400106. DOI: 10.1109/Jstqe.2012.2218093 |
0.725 |
|
2013 |
Liu G, Zhang J, Tan CK, Tansu N. Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2255028 |
0.695 |
|
2013 |
Zhang J, Tansu N. Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2247587 |
0.604 |
|
2013 |
Zhu P, Liu G, Zhang J, Tansu N. FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays Ieee/Osa Journal of Display Technology. 9: 317-323. DOI: 10.1109/Jdt.2013.2250253 |
0.764 |
|
2013 |
Zhao H, Liu G, Zhang J, Arif RA, Tansu N. Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 212-225. DOI: 10.1109/Jdt.2013.2250252 |
0.787 |
|
2013 |
Tan CK, Zhang J, Li XH, Liu G, Tayo BO, Tansu N. First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters Ieee/Osa Journal of Display Technology. 9: 272-279. DOI: 10.1109/Jdt.2013.2248342 |
0.762 |
|
2013 |
Li XH, Zhu P, Liu G, Zhang J, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays Ieee/Osa Journal of Display Technology. 9: 324-332. DOI: 10.1109/Jdt.2013.2246541 |
0.753 |
|
2013 |
Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Journal of Applied Physics. 113. DOI: 10.1063/1.4775605 |
0.718 |
|
2012 |
Liu G, Zhang J, Zhao H, Tansu N. Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.909633 |
0.743 |
|
2012 |
Liu G, Zhang J, Li XH, Huang GS, Paskova T, Evans KR, Zhao H, Tansu N. Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates Journal of Crystal Growth. 340: 66-73. DOI: 10.1016/J.Jcrysgro.2011.12.037 |
0.71 |
|
2011 |
Zhao H, Liu G, Zhang J, Poplawsky JD, Dierolf V, Tansu N. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express. 19: A991-A1007. PMID 21747571 DOI: 10.1364/Oe.19.00A991 |
0.759 |
|
2011 |
Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters. 6: 342. PMID 21711862 DOI: 10.1186/1556-276X-6-342 |
0.768 |
|
2011 |
Zhang J, Tong H, Herbsommer JA, Tansu N. Analysis of thermoelectric properties of AlInN semiconductor alloys Proceedings of Spie - the International Society For Optical Engineering. 7933. DOI: 10.1117/12.875995 |
0.622 |
|
2011 |
Tansu N, Zhao H, Zhang J, Liu G, Li XH, Ee YK, Song R, Toma T, Zhao L, Huang GS. Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875901 |
0.78 |
|
2011 |
Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875125 |
0.702 |
|
2011 |
Zhang J, Zhao H, Tansu N. Gain characteristics of deep UV AlGaN quantum wells lasers Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875079 |
0.688 |
|
2011 |
Zhao H, Zhang J, Liu G, Toma T, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1109/Photonics.2010.5698996 |
0.747 |
|
2011 |
Tansu N, Zhang J, Zhao H. Physics of novel III-nitride gain media for visible and ultraviolet lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 509-510. DOI: 10.1109/Pho.2011.6110645 |
0.654 |
|
2011 |
Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Efficient Terahertz Generation Within InGaN/GaN Multiple Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 17: 48-53. DOI: 10.1109/Jstqe.2010.2049343 |
0.722 |
|
2011 |
Zhang J, Tansu N. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes Journal of Applied Physics. 110. DOI: 10.1063/1.3668117 |
0.583 |
|
2011 |
Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of fast and slow decays in InGaN/GaN quantum wells Applied Physics Letters. 99: 081104. DOI: 10.1063/1.3627166 |
0.721 |
|
2011 |
Zhang J, Kutlu S, Liu G, Tansu N. High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 110. DOI: 10.1063/1.3624761 |
0.625 |
|
2011 |
Zhang J, Zhao H, Tansu N. Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes Applied Physics Letters. 98. DOI: 10.1063/1.3583442 |
0.688 |
|
2011 |
Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3580628 |
0.703 |
|
2011 |
Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents Journal of Applied Physics. 109. DOI: 10.1063/1.3553880 |
0.702 |
|
2010 |
Liu G, Zhao H, Zhang J, Tong H, Huang GS, Tansu N. Growths of lattice-matched AlInN / GaN for optoelectronics applications 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 534-535. DOI: 10.1109/Photonics.2010.5698997 |
0.73 |
|
2010 |
Zhang J, Zhao H, Tansu N. Gain and spontaneous emission characteristics of high Al-content AlGaN quantum well lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 63-64. DOI: 10.1109/Photonics.2010.5698758 |
0.687 |
|
2010 |
Tansu N, Zhao H, Liu G, Li XH, Zhang J, Tong H, Ee YK. III-nitride photonics Ieee Photonics Journal. 2: 236-243. DOI: 10.1109/Jphot.2010.2045887 |
0.758 |
|
2010 |
Tong H, Zhang J, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition Applied Physics Letters. 97: 112105. DOI: 10.1063/1.3489086 |
0.691 |
|
2010 |
Zhang J, Zhao H, Tansu N. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers Applied Physics Letters. 97. DOI: 10.1063/1.3488825 |
0.683 |
|
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