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Eric R. Hemesath, Ph.D. - Publications

Affiliations: 
2010 Materials Science and Engineering Northwestern University, Evanston, IL 
Area:
Materials Science Engineering, Nanoscience
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Nichol JM, Naibert TR, Hemesath ER, Lauhon LJ, Budakian R. Nanoscale fourier-transform magnetic resonance imaging Physical Review X. 3. DOI: 10.1103/Physrevx.3.031016  0.506
2013 Nichol JM, Naibert TR, Hemesath ER, Lauhon LJ, Budakian R. Publisher’s Note: Nanoscale Fourier-Transform Magnetic Resonance Imaging [Phys. Rev. X3, 031016 (2013)] Physical Review X. 3. DOI: 10.1103/Physrevx.3.049901  0.506
2013 Wu J, Padalkar S, Xie S, Hemesath ER, Cheng J, Liu G, Yan A, Connell JG, Nakazawa E, Zhang X, Lauhon LJ, Dravid VP. Electron tomography of Au-catalyzed semiconductor nanowires Journal of Physical Chemistry C. 117: 1059-1063. DOI: 10.1021/Jp310816F  0.747
2012 Schreiber DK, Adusumilli P, Hemesath ER, Seidman DN, Petford-Long AK, Lauhon LJ. A method for directly correlating site-specific cross-sectional and plan-view transmission electron microscopy of individual nanostructures. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 18: 1410-8. PMID 23146147 DOI: 10.1017/S1431927612013517  0.718
2012 Hemesath ER, Schreiber DK, Kisielowski CF, Petford-Long AK, Lauhon LJ. Atomic structural analysis of nanowire defects and polytypes enabled through cross-sectional lattice imaging. Small (Weinheim An Der Bergstrasse, Germany). 8: 1717-24. PMID 22447661 DOI: 10.1002/Smll.201102404  0.619
2012 Cai W, Che Y, Pelz JP, Hemesath ER, Lauhon LJ. Direct measurements of lateral variations of Schottky barrier height across "end-on" metal contacts to vertical Si nanowires by ballistic electron emission microscopy. Nano Letters. 12: 694-8. PMID 22214531 DOI: 10.1021/Nl203568C  0.654
2012 Hemesath ER, Schreiber DK, Gulsoy EB, Kisielowski CF, Petford-Long AK, Voorhees PW, Lauhon LJ. Catalyst incorporation at defects during nanowire growth. Nano Letters. 12: 167-71. PMID 22111988 DOI: 10.1021/Nl203259F  0.621
2012 Nichol JM, Hemesath ER, Lauhon LJ, Budakian R. Nanomechanical detection of nuclear magnetic resonance using a silicon nanowire oscillator Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.054414  0.559
2011 Koren E, Elias G, Boag A, Hemesath ER, Lauhon LJ, Rosenwaks Y. Direct measurement of individual deep traps in single silicon nanowires. Nano Letters. 11: 2499-502. PMID 21591656 DOI: 10.1021/Nl201019B  0.653
2011 Koren E, Hyun JK, Givan U, Hemesath ER, Lauhon LJ, Rosenwaks Y. Obtaining uniform dopant distributions in VLS-grown Si nanowires. Nano Letters. 11: 183-7. PMID 21126102 DOI: 10.1021/Nl103363C  0.67
2011 Hemesath ER, Lensch-Falk JL, Lauhon LJ. Texture analysis of manganese-germanide/germanium nanowire heterostructures by high resolution electron microscopy and diffraction Journal of Materials Research. 26: 2299-2304. DOI: 10.1557/Jmr.2011.109  0.651
2011 Koren E, Berkovitch N, Azriel O, Boag A, Rosenwaks Y, Hemesath ER, Lauhon LJ. Direct measurement of nanowire Schottky junction depletion region Applied Physics Letters. 99. DOI: 10.1063/1.3665182  0.676
2010 Hyun JK, Hemesath ER, Lauhon LJ. Mitigation of surface doping in VLS-grown Si nanowires 2010 10th Ieee Conference On Nanotechnology, Nano 2010. 131-135. DOI: 10.1109/NANO.2010.5698055  0.638
2010 Wu J, Xie S, Hemesath E, Lauhon L, Dravid V. 3D Complete-Tilt Electron Tomography of Semiconductor Nanowires Microscopy and Microanalysis. 16: 1876-1877. DOI: 10.1017/S1431927610057302  0.584
2009 Zhang S, Hemesath ER, Perea DE, Wijaya E, Lensch-Falk JL, Lauhon LJ. Relative influence of surface states and bulk impurities on the electrical properties of Ge nanowires. Nano Letters. 9: 3268-74. PMID 19658399 DOI: 10.1021/Nl901548U  0.741
2009 Lopez FJ, Hemesath ER, Lauhon LJ. Ordered stacking fault arrays in silicon nanowires. Nano Letters. 9: 2774-9. PMID 19527044 DOI: 10.1021/Nl901315S  0.636
2009 Perea DE, Hemesath ER, Schwalbach EJ, Lensch-Falk JL, Voorhees PW, Lauhon LJ. Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire. Nature Nanotechnology. 4: 315-9. PMID 19421218 DOI: 10.1038/Nnano.2009.51  0.759
2009 Allen JE, Hemesath ER, Lauhon LJ. Scanning photocurrent microscopy analysis of Si nanowire field-effect transistors fabricated by surface etching of the channel. Nano Letters. 9: 1903-8. PMID 19326918 DOI: 10.1021/Nl803924Z  0.737
2009 Schlitz RA, Perea DE, Lensch-Falk JL, Hemesath ER, Lauhon LJ. Correlating dopant distributions and electrical properties of boron-doped silicon nanowires Applied Physics Letters. 95. DOI: 10.1063/1.3250431  0.748
2009 Nichol JM, Hemesath ER, Lauhon LJ, Budakian R. Controlling the nonlinearity of silicon nanowire resonators using active feedback Applied Physics Letters. 95. DOI: 10.1063/1.3232232  0.526
2009 Koren E, Rosenwaks Y, Allen JE, Hemesath ER, Lauhon LJ. Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy Applied Physics Letters. 95. DOI: 10.1063/1.3207887  0.771
2009 Nichol JM, Hemesath ER, Lauhon LJ, Budakian R. Publisher's Note: “Displacement detection of silicon nanowires by polarization-enhanced fiber-optic interferometry” [Appl. Phys. Lett. 93, 193110 (2008)] Applied Physics Letters. 94: 239901. DOI: 10.1063/1.3152591  0.556
2009 Chou JY, Lensch-Falk JL, Hemesath ER, Lauhon LJ. Vanadium oxide nanowire phase and orientation analyzed by Raman spectroscopy Journal of Applied Physics. 105. DOI: 10.1063/1.3075763  0.614
2009 Lensch-Falk JL, Hemesath ER, Perea DE, Lauhon LJ. Alternative catalysts for VSS growth of silicon and germanium nanowires Journal of Materials Chemistry. 19: 849-857. DOI: 10.1039/B817391E  0.734
2009 Allen JE, Perea DE, Hemesath ER, Lauhon LJ. Nonuniform nanowire doping profiles revealed by quantitative scanning photocurrent microscopy Advanced Materials. 21: 3067-3072. DOI: 10.1002/Adma.200803865  0.786
2008 Lensch-Falk JL, Hemesath ER, Lauhon LJ. Syntaxial growth of Ge/Mn-germanide nanowire heterostructures. Nano Letters. 8: 2669-73. PMID 18698729 DOI: 10.1021/Nl800933S  0.589
2008 Allen JE, Hemesath ER, Perea DE, Lensch-Falk JL, Li ZY, Yin F, Gass MH, Wang P, Bleloch AL, Palmer RE, Lauhon LJ. High-resolution detection of Au catalyst atoms in Si nanowires. Nature Nanotechnology. 3: 168-73. PMID 18654490 DOI: 10.1038/Nnano.2008.5  0.797
2008 Nichol JM, Budakian R, Hemesath ER, Lauhon LJ. Displacement detection of silicon nanowires by polarization-enhanced fiber-optic interferometry Applied Physics Letters. 93. DOI: 10.1063/1.3025305  0.597
2008 Lensch-Falk JL, Hemesath ER, Lopez FJ, Lauhon LJ. Vapor-solid-solid synthesis of Ge nanowires from vapor-phase-deposited manganese germanide seeds (Journal of the American Chemical Society (2007) 129, (10670-10671)) Journal of the American Chemical Society. 130: 1109. DOI: 10.1021/Ja076900Y  0.577
2008 Perea DE, Wijaya E, Lensch-Falk JL, Hemesath ER, Lauhon LJ. Tomographic analysis of dilute impurities in semiconductor nanostructures Journal of Solid State Chemistry. 181: 1642-1649. DOI: 10.1016/J.Jssc.2008.06.007  0.734
2007 Lensch-Falk JL, Hemesath ER, Lopez FJ, Lauhon LJ. Vapor-solid-solid synthesis of Ge nanowires from vapor-phase-deposited manganese germanide seeds. Journal of the American Chemical Society. 129: 10670-1. PMID 17685619 DOI: 10.1021/Ja074276J  0.594
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