Sung-Yool Choi - Publications

Affiliations: 
Electrical Engineering Korea Advanced Institute of Science and Technology, Daejeon, South Korea 

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Park I, Kim TI, Yoon T, Kang S, Cho H, Cho NS, Lee J, Kim T, Choi S. Flexible and Transparent Graphene Electrode Architecture with Selective Defect Decoration for Organic Light-Emitting Diodes Advanced Functional Materials. 28: 1704435. DOI: 10.1002/Adfm.201704435  0.318
2016 Choi I, Jeong HY, Shin H, Kang G, Byun M, Kim H, Chitu AM, Im JS, Ruoff RS, Choi SY, Lee KJ. Laser-induced phase separation of silicon carbide. Nature Communications. 7: 13562. PMID 27901015 DOI: 10.1038/Ncomms13562  0.322
2015 Moon J, Shin JW, Cho H, Han JH, Cho NS, Lim JT, Park SK, Choi HK, Choi SY, Kim JH, Maeng MJ, Seo J, Park Y, Lee JI. Technical issues in graphene anode organic light emitting diodes Diamond and Related Materials. 57: 68-73. DOI: 10.1016/J.Diamond.2015.03.020  0.306
2014 Choi I, Jeong HY, Jung DY, Byun M, Choi CG, Hong BH, Choi SY, Lee KJ. Laser-induced solid-phase doped graphene. Acs Nano. 8: 7671-7. PMID 25006987 DOI: 10.1021/Nn5032214  0.337
2014 Shim GW, Yoo K, Seo SB, Shin J, Jung DY, Kang IS, Ahn CW, Cho BJ, Choi SY. Large-area single-layer MoSe2 and its van der Waals heterostructures. Acs Nano. 8: 6655-62. PMID 24987802 DOI: 10.1021/Nn405685J  0.325
2013 Shin WC, Yoon T, Mun JH, Kim TY, Choi SY, Kim TS, Cho BJ. Doping suppression and mobility enhancement of graphene transistors fabricated using an adhesion promoting dry transfer process Applied Physics Letters. 103. DOI: 10.1063/1.4846317  0.315
2011 Kim H, Choi H, Choi S, Ju S. Aligned Circular-Type Nanowire Transistors Grown on Multilayer Graphene Film The Journal of Physical Chemistry C. 115: 22163-22167. DOI: 10.1021/Jp2052008  0.303
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