| Year |
Citation |
Score |
| 2021 |
Yang T, Luo YZ, Wang Z, Zhu T, Pan H, Wang S, Lau SP, Feng YP, Yang M. AgS monolayer: an ultrasoft inorganic Lieb lattice. Nanoscale. 13: 14008-14015. PMID 34477681 DOI: 10.1039/d1nr02588k |
0.398 |
|
| 2020 |
Wang D, Wang Z, Liu W, Arramel, Zhou J, Feng YP, Loh KP, Wu J, Wee ATS. Atomic-Level Electronic Properties of Carbon Nitride Monolayers. Acs Nano. PMID 32954722 DOI: 10.1021/Acsnano.0C06535 |
0.338 |
|
| 2020 |
Chen AP, Lin W, Chen J, Feng YP. Thickness and Ferroelectric Polarization Influence on Film Magnetic Anisotropy across a Multiferroic Material Interface. Acs Applied Materials & Interfaces. PMID 32894937 DOI: 10.1021/Acsami.0C12048 |
0.654 |
|
| 2020 |
Zhang L, Yang T, He X, Zhang W, Vinai G, Tang CS, Yin X, Torelli P, Feng YP, Wong PKJ, Wee ATS. Molecular Beam Epitaxy of Two-Dimensional Vanadium-Molybdenum Diselenide Alloys. Acs Nano. PMID 32794699 DOI: 10.1021/Acsnano.0C02124 |
0.329 |
|
| 2020 |
Tang CS, Yin X, Zeng S, Wu J, Yang M, Yang P, Diao C, Feng YP, Breese MBH, Chia EEM, Venkatesan T, Chhowalla M, Ariando A, Rusydi A, Wee ATS. Interfacial Oxygen-Driven Charge Localization and Plasmon Excitation in Unconventional Superconductors. Advanced Materials (Deerfield Beach, Fla.). e2000153. PMID 32643185 DOI: 10.1002/Adma.202000153 |
0.308 |
|
| 2020 |
Lin W, Yang B, Chen AP, Wu X, Guo R, Chen S, Liu L, Xie Q, Shu X, Hui Y, Chow GM, Feng Y, Carlotti G, Tacchi S, Yang H, et al. Perpendicular Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction at an Oxide/Ferromagnetic Metal Interface. Physical Review Letters. 124: 217202. PMID 32530667 DOI: 10.1103/Physrevlett.124.217202 |
0.66 |
|
| 2020 |
Tang CS, Yin X, Yang M, Wu D, Wu J, Wong LM, Li C, Tong SW, Chang YH, Ouyang F, Feng YP, Wang SJ, Chi D, Breese MBH, Zhang W, et al. Anisotropic Collective Charge Excitations in Quasimetallic 2D Transition-Metal Dichalcogenides. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 1902726. PMID 32440469 DOI: 10.1002/Advs.201902726 |
0.308 |
|
| 2020 |
Li Z, Zhang X, Zhao X, Li J, Herng TS, Xu H, Lin F, Lyu P, Peng X, Yu W, Hai X, Chen C, Yang H, Martin J, Lu J, ... ... Feng Y, et al. Imprinting Ferromagnetism and Superconductivity in Single Atomic Layers of Molecular Superlattices. Advanced Materials (Deerfield Beach, Fla.). e1907645. PMID 32419256 DOI: 10.1002/Adma.201907645 |
0.328 |
|
| 2020 |
Chen AP, Feng YP. Modulating Multiferroic Control of Magnetocrystalline Anisotropy using 5 Transition Metal Capping Layers. Acs Applied Materials & Interfaces. PMID 32392027 DOI: 10.1021/Acsami.0C02074 |
0.634 |
|
| 2020 |
Ang MC, Tang CG, Koh Q, Zhao C, Seah Q, Wang Y, Callsen M, Feng Y, Png R, Chua L. Bulk ion-clustering and surface ion-layering effects on work function of self-compensated charged-doped polymer semiconductors Materials Horizons. 7: 1073-1082. DOI: 10.1039/C9Mh01749F |
0.305 |
|
| 2020 |
Verzhbitskiy IA, Kurebayashi H, Cheng H, Zhou J, Khan S, Feng YP, Eda G. Controlling the magnetic anisotropy in Cr2Ge2Te6 by electrostatic gating Nature Electronics. 3: 460-465. DOI: 10.1038/S41928-020-0427-7 |
0.325 |
|
| 2019 |
Tang CS, Yin X, Yang M, Wu D, Birowosuto MD, Wu J, Li C, Hettiarachchi C, Chin XY, Chang YH, Ouyang F, Dang C, Pennycook SJ, Feng YP, Wang S, et al. Three-Dimensional Resonant Exciton in Monolayer Tungsten Diselenide Actuated by Spin-Orbit Coupling. Acs Nano. PMID 31702890 DOI: 10.1021/Acsnano.9B08385 |
0.331 |
|
| 2019 |
Wong PKJ, Zhang W, Zhou J, Bussolotti F, Yin X, Zhang L, N'Diaye AT, Morton SA, Chen W, Goh J, de Jong MP, Feng YP, Wee ATS. Metallic 1T Phase, 3d Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride. Acs Nano. PMID 31693338 DOI: 10.1021/Acsnano.9B05349 |
0.339 |
|
| 2019 |
Wang A, Shen L, Zhao M, Zhang X, He T, Li W, Feng Y, Liu H. Serendipity of a topological nontrivial band gap in the 2D borophene subunit lattice with broken mirror symmetry. Physical Chemistry Chemical Physics : Pccp. PMID 31588445 DOI: 10.1039/C9Cp01931F |
0.324 |
|
| 2019 |
Yu W, Li J, Herng TS, Wang Z, Zhao X, Chi X, Fu W, Abdelwahab I, Zhou J, Dan J, Chen Z, Chen Z, Li Z, Lu J, Pennycook SJ, ... Feng YP, et al. Chemically Exfoliated VSe Monolayers with Room-Temperature Ferromagnetism. Advanced Materials (Deerfield Beach, Fla.). e1903779. PMID 31423650 DOI: 10.1002/Adma.201903779 |
0.353 |
|
| 2019 |
Yilmaz G, Yang T, Du Y, Yu X, Feng YP, Shen L, Ho GW. Stimulated Electrocatalytic Hydrogen Evolution Activity of MOF-Derived MoS Basal Domains via Charge Injection through Surface Functionalization and Heteroatom Doping. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 6: 1900140. PMID 31406663 DOI: 10.1002/Advs.201900140 |
0.313 |
|
| 2019 |
Yin X, Yang M, Tang CS, Wang Q, Xu L, Wu J, Trevisanutto PE, Zeng S, Chin XY, Asmara TC, Feng YP, Ariando A, Chhowalla M, Wang SJ, Zhang W, et al. Modulation of New Excitons in Transition Metal Dichalcogenide-Perovskite Oxide System. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 6: 1900446. PMID 31380174 DOI: 10.1002/Advs.201900446 |
0.359 |
|
| 2019 |
Zhang W, Zhang L, Wong PKJ, Yuan J, Vinai G, Torelli P, van der Laan G, Feng YP, Wee ATS. Magnetic Transition in Monolayer VSe2 via Interface Hybridization. Acs Nano. PMID 31306576 DOI: 10.1021/Acsnano.9B02996 |
0.319 |
|
| 2019 |
He X, Zhang L, Chua R, Wong PKJ, Arramel A, Feng YP, Wang SJ, Chi D, Yang M, Huang YL, Wee ATS. Selective self-assembly of 2,3-diaminophenazine molecules on MoSe mirror twin boundaries. Nature Communications. 10: 2847. PMID 31253803 DOI: 10.1038/S41467-019-10801-0 |
0.316 |
|
| 2019 |
Yin X, Tang CS, Wu D, Kong W, Li C, Wang Q, Cao L, Yang M, Chang YH, Qi D, Ouyang F, Pennycook SJ, Feng YP, Breese MBH, Wang SJ, et al. Unraveling High-Yield Phase-Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 6: 1802093. PMID 30989029 DOI: 10.1002/Advs.201802093 |
0.303 |
|
| 2019 |
Zhang W, Wong PKJ, Zhou X, Rath A, Huang Z, Wang H, Morton SA, Yuan J, Zhang L, Chua R, Zeng S, Liu E, Xu F, Ariando, Chua DHC, ... Feng YP, et al. Ferromagnet/Two-Dimensional Semiconducting Transition-Metal Dichalcogenide Interface with Perpendicular Magnetic Anisotropy. Acs Nano. PMID 30775909 DOI: 10.1021/Acsnano.8B08926 |
0.336 |
|
| 2019 |
Zhang GW, Feng YP, Ong CK. Local binding trend and local electronic structures of 4d transition metals. Physical Review. B, Condensed Matter. 54: 17208-17214. PMID 9985857 DOI: 10.1103/Physrevb.54.17208 |
0.305 |
|
| 2019 |
Xiao C, Wang X, Pi X, Yang SA, Feng Y, Lu Y, Zhang S. Spontaneous symmetry lowering of Si (001) towards two-dimensional ferro/antiferroelectric behavior Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.044410 |
0.334 |
|
| 2019 |
Das PK, Whitcher TJ, Yang M, Chi X, Feng YP, Lin W, Chen JS, Vobornik I, Fujii J, Kokh KA, Tereshchenko OE, Diao CZ, Moon J, Oh S, Castro-Neto AH, et al. Electronic correlation determining correlated plasmons in Sb-doped Bi2Se3 Physical Review B. 100. DOI: 10.1103/Physrevb.100.115109 |
0.321 |
|
| 2019 |
Wang A, Shen L, Zhao M, Wang J, Li W, Zhou W, Feng Y, Liu H. Tungsten Boride: a 2D Multiple Dirac Semimetal for Hydrogen Evolution Reaction Journal of Materials Chemistry C. 7: 8868-8873. DOI: 10.1039/C9Tc01862J |
0.323 |
|
| 2019 |
Zhou WX, Wu HJ, Zhou J, Zeng SW, Li CJ, Li MS, Guo R, Xiao JX, Huang Z, Lv WM, Han K, Yang P, Li CG, Lim ZS, Wang H, ... ... Feng YP, et al. Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator Communications in Physics. 2: 1-8. DOI: 10.1038/S42005-019-0227-4 |
0.352 |
|
| 2019 |
Zhu Y, Pan YF, Yang ZQ, Wei XY, Hu J, Feng YP, Zhang H, Wu RQ. Ruderman–Kittel–Kasuya–Yosida Mechanism for Magnetic Ordering of Sparse Fe Adatoms on Graphene Journal of Physical Chemistry C. 123: 4441-4445. DOI: 10.1021/Acs.Jpcc.8B11803 |
0.323 |
|
| 2019 |
Zhou J, Shen L, Yang M, Cheng H, Kong W, Feng YP. Discovery of Hidden Classes of Layered Electrides by Extensive High-Throughput Material Screening Chemistry of Materials. 31: 1860-1868. DOI: 10.1021/Acs.Chemmater.8B03021 |
0.307 |
|
| 2019 |
Yong Z, Linghu J, Xi S, Yin X, Leek ML, Shen L, Timm R, Wee ATS, Feng YP, Pan J. Unravelling uniaxial strain effects on electronic correlations, hybridization and bonding in transition metal oxides Acta Materialia. 164: 618-626. DOI: 10.1016/J.Actamat.2018.11.017 |
0.72 |
|
| 2019 |
Wang Z, Lü T, Wang H, Feng YP, Zheng J. Review of borophene and its potential applications Frontiers of Physics in China. 14: 33403. DOI: 10.1007/S11467-019-0884-5 |
0.301 |
|
| 2018 |
Xiao W, Yang Y, Chi X, Liu B, Du Y, Yang P, Herng TS, Gao D, Song W, Feng YP, Rusydi A, Ding J. High-Magnetization Tetragonal Ferrite-Based Films Induced by Carbon and Oxygen Vacancy Pairs. Acs Applied Materials & Interfaces. PMID 30560652 DOI: 10.1021/Acsami.8B17902 |
0.337 |
|
| 2018 |
Liu Y, Yudhistira I, Yang M, Laksono E, Luo YZ, Chen J, Lu J, Feng YP, Adam S, Loh KP. Phonon-mediated Colossal Magnetoresistance in Graphene/Black Phosphorous Heterostructures. Nano Letters. PMID 29726254 DOI: 10.1021/Acs.Nanolett.8B00155 |
0.306 |
|
| 2018 |
Yang M, Ariando, Zhou J, Asmara TC, Krüger P, Yu XJ, Wang X, Sanchez-Hanke C, Feng YP, Venkatesan T, Rusydi A. Direct Observation of Room-Temperature Stable Magnetism in LaAlO/SrTiOHeterostructures. Acs Applied Materials & Interfaces. PMID 29517231 DOI: 10.1021/Acsami.7B12945 |
0.324 |
|
| 2018 |
Wang A, Zhao X, Zhao M, Zhang X, Feng YP, Liu F. Kane Fermion in Two-Dimensional π-Conjugated Bis(iminothiolato)nickel Monolayer. The Journal of Physical Chemistry Letters. PMID 29343066 DOI: 10.1021/Acs.Jpclett.7B03021 |
0.341 |
|
| 2018 |
Zhu T, Trevisanutto PE, Asmara TC, Xu L, Feng YP, Rusydi A. Generation of multiple plasmons in strontium niobates mediated by local field effects Physical Review B. 98: 235115. DOI: 10.1103/Physrevb.98.235115 |
0.381 |
|
| 2018 |
Zhu Z, Liu Y, Yu Z, Wang S, Zhao YX, Feng Y, Sheng X, Yang SA. Quadratic contact point semimetal: Theory and material realization Physical Review B. 98. DOI: 10.1103/Physrevb.98.125104 |
0.353 |
|
| 2018 |
Xu L, Yang M, Shen L, Zhou J, Zhu T, Feng YP. Large valley splitting in monolayer WS 2 by proximity coupling to an insulating antiferromagnetic substrate Physical Review B. 97: 41405. DOI: 10.1103/Physrevb.97.041405 |
0.496 |
|
| 2018 |
Shi S, Wang A, Wang Y, Ramaswamy R, Shen L, Moon J, Zhu D, Yu J, Oh S, Feng Y, Yang H. Efficient charge-spin conversion and magnetization switching through the Rashba effect at topological-insulator/Ag interfaces Physical Review B. 97. DOI: 10.1103/Physrevb.97.041115 |
0.3 |
|
| 2018 |
Cheng H, Zhou J, Yang M, Shen L, Linghu J, Wu Q, Qian P, Feng YP. Robust two-dimensional bipolar magnetic semiconductors by defect engineering Journal of Materials Chemistry C. 6: 8435-8443. DOI: 10.1039/C8Tc00507A |
0.3 |
|
| 2018 |
Yuan J, Cai Y, Shen L, Xiao Y, Ren J, Wang A, Feng YP, Yan X. One-dimensional thermoelectrics induced by Rashba spin-orbit coupling in two-dimensional BiSb monolayer Nano Energy. 52: 163-170. DOI: 10.1016/J.Nanoen.2018.07.041 |
0.317 |
|
| 2018 |
Guan C, Xiao W, Wu H, Liu X, Zang W, Zhang H, Ding J, Feng YP, Pennycook SJ, Wang J. Hollow Mo-doped CoP nanoarrays for efficient overall water splitting Nano Energy. 48: 73-80. DOI: 10.1016/J.Nanoen.2018.03.034 |
0.308 |
|
| 2018 |
Yong Z, Linghu J, Xi S, Tan HR, Shen L, Yang P, Hui HK, Cao JQ, Leek ML, Yin X, Feng YP, Pan J. Ti1-xSnxO2 nanofilms: Layer-by-layer deposition with extended Sn solubility and characterization Applied Surface Science. 428: 710-717. DOI: 10.1016/J.Apsusc.2017.09.135 |
0.708 |
|
| 2017 |
Yang M, Luo YZ, Zeng MG, Shen L, Lu YH, Zhou J, Wang SJ, Sou IK, Feng YP. Pressure induced topological phase transition in layered Bi2S3. Physical Chemistry Chemical Physics : Pccp. PMID 29075687 DOI: 10.1039/C7Cp04583B |
0.335 |
|
| 2017 |
Wang A, Zhang X, Feng Y, Zhao M. Chern Insulator and Chern Half-Metal States in the Two-Dimensional Spin-Gapless Semiconductor Mn2C6S12. The Journal of Physical Chemistry Letters. 3770-3775. PMID 28762733 DOI: 10.1021/Acs.Jpclett.7B01187 |
0.306 |
|
| 2017 |
Xiao C, Wang F, Wang Y, Yang SA, Jiang J, Yang M, Lu Y, Wang S, Feng Y. Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application. Scientific Reports. 7: 2570. PMID 28566756 DOI: 10.1038/S41598-017-02832-8 |
0.339 |
|
| 2017 |
Asmara TC, Wan D, Zhao Y, Majidi MA, Nelson CT, Scott MC, Cai Y, Yan B, Schmidt D, Yang M, Zhu T, Trevisanutto PE, Motapothula MR, Feng YP, Breese MBH, et al. Tunable and low-loss correlated plasmons in Mott-like insulating oxides. Nature Communications. 8: 15271. PMID 28497786 DOI: 10.1038/Ncomms15271 |
0.452 |
|
| 2017 |
Wang Z, Lü TY, Wang HQ, Feng YP, Zheng JC. New crystal structure prediction of fully hydrogenated borophene by first principles calculations. Scientific Reports. 7: 609. PMID 28377622 DOI: 10.1038/S41598-017-00667-X |
0.315 |
|
| 2017 |
He S, Liu Y, Zheng Y, Qin Q, Wen Z, Wu Q, Yang Y, Wang Y, Feng Y, Teo KL, Panagopoulos C. Tunable magnetization relaxation of Fe2Cr1−xCoxSi half-metallic Heusler alloys by band structure engineering Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.064401 |
0.343 |
|
| 2017 |
Zhou J, Yang M, Feng YP, Rusydi A. La interstitial defect-induced insulator-metal transition in the oxide heterostructures LaAlO3/SrTiO3 Physical Review B. 96. DOI: 10.1103/Physrevb.96.201406 |
0.355 |
|
| 2017 |
Yang Y, Yuan J, Qi L, Wang Y, Xu Y, Wang X, Feng Y, Xu B, Shen L, Wu Y. Unveiling the role of Co-O-Mg bond in magnetic anisotropy of Pt/Co/MgO using atomically controlled deposition and in situ electrical measurement Physical Review B. 95. DOI: 10.1103/Physrevb.95.094417 |
0.314 |
|
| 2017 |
Qin Q, He S, Song W, Yang P, Wu Q, Feng YP, Chen J. Ultra-low magnetic damping of perovskite La0.7Sr0.3MnO3 thin films Applied Physics Letters. 110: 112401. DOI: 10.1063/1.4978431 |
0.311 |
|
| 2017 |
Feng YP, Shen L, Yang M, Wang A, Zeng M, Wu Q, Chintalapati S, Chang C. Prospects of spintronics based on 2D materials Wiley Interdisciplinary Reviews: Computational Molecular Science. 7. DOI: 10.1002/Wcms.1313 |
0.305 |
|
| 2017 |
Chai JW, Yang M, Callsen M, Zhou J, Yang T, Zhang Z, Pan JS, Chi DZ, Feng YP, Wang SJ. Tuning Contact Barrier Height between Metals and MoS2 Monolayer through Interface Engineering Advanced Materials Interfaces. 4: 1700035. DOI: 10.1002/Admi.201700035 |
0.303 |
|
| 2016 |
Xiao W, Song W, Herng TS, Qin Q, Yang Y, Zheng M, Hong X, Feng YP, Ding J. Novel room-temperature spin-valve-like magnetoresistance in magnetically coupled nano-column Fe3O4/Ni heterostructure. Nanoscale. PMID 27526860 DOI: 10.1039/C6Nr04805F |
0.321 |
|
| 2016 |
Song TT, Yang M, Chai JW, Callsen M, Zhou J, Yang T, Zhang Z, Pan JS, Chi DZ, Feng YP, Wang SJ. The stability of aluminium oxide monolayer and its interface with two-dimensional materials. Scientific Reports. 6: 29221. PMID 27381580 DOI: 10.1038/Srep29221 |
0.347 |
|
| 2016 |
Chintalapati S, Feng YP. Stable ferromagnetic state in Si-doped AlN with cation vacancies: Ab-initio study International Journal of Computational Materials Science and Engineering. 5: 1650017. DOI: 10.1142/S2047684116500172 |
0.332 |
|
| 2016 |
Zhou J, Yang M, Shen L, Wu QY, Xu L, Feng YP, Rusydi A. Tuning polarization states and interface properties of BaTiO3/SrTiO3 heterostructure by metal capping layers Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.155167 |
0.331 |
|
| 2016 |
Ganesan VD, Linghu J, Zhang C, Feng YP, Shen L. Heterostructures of phosphorene and transition metal dichalcogenides for excitonic solar cells: A first-principles study Applied Physics Letters. 108. DOI: 10.1063/1.4944642 |
0.328 |
|
| 2016 |
Lu Y, Zhou D, Chang G, Guan S, Chen W, Jiang Y, Jiang J, Wang X, Yang SA, Feng YP, Kawazoe Y, Lin H. Multiple unpinned Dirac points in group-Va single-layers with phosphorene structure Npj Computational Materials. 2. DOI: 10.1038/Npjcompumats.2016.11 |
0.325 |
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| 2016 |
Yang M, Chai JW, Callsen M, Zhou J, Yang T, Song TT, Pan JS, Chi DZ, Feng YP, Wang SJ. Interfacial Interaction between HfO2 and MoS2: From Thin Films to Monolayer Journal of Physical Chemistry C. 120: 9804-9810. DOI: 10.1021/Acs.Jpcc.6B01576 |
0.343 |
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| 2016 |
Sun JT, Chen W, Sakamoto K, Feng YP, Wee ATS. Adsorption-enhanced spin-orbit coupling of buckled honeycomb silicon Physica E: Low-Dimensional Systems and Nanostructures. 83: 141-145. DOI: 10.1016/J.Physe.2016.04.022 |
0.322 |
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| 2015 |
Sarkar T, Gopinadhan K, Zhou J, Saha S, Coey JM, Feng YP, Ariando, Venkatesan T. Electron Transport at the TiO2 Surfaces of Rutile, Anatase, and Strontium Titanate: The Influence of Orbital Corrugation. Acs Applied Materials & Interfaces. PMID 26509804 DOI: 10.1021/Acsami.5B06694 |
0.321 |
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| 2015 |
Chen X, Zhu X, Xiao W, Liu G, Feng YP, Ding J, Li RW. Nanoscale magnetization reversal caused by electric field-induced ion migration and redistribution in cobalt ferrite thin films. Acs Nano. 9: 4210-8. PMID 25794422 DOI: 10.1021/Acsnano.5B00456 |
0.303 |
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| 2015 |
Sulaev A, Zeng M, Shen SQ, Cho SK, Zhu WG, Feng YP, Eremeev SV, Kawazoe Y, Shen L, Wang L. Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 nanodevices. Nano Letters. 15: 2061-6. PMID 25665017 DOI: 10.1021/Nl504956S |
0.314 |
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| 2015 |
Lu Y, Xu W, Zeng M, Yao G, Shen L, Yang M, Luo Z, Pan F, Wu K, Das T, He P, Jiang J, Martin J, Feng YP, Lin H, et al. Topological properties determined by atomic buckling in self-assembled ultrathin Bi(110). Nano Letters. 15: 80-7. PMID 25495154 DOI: 10.1021/Nl502997V |
0.346 |
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| 2015 |
Chintalapati S, Cai Y, Yang M, Shen L, Feng YP. Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN Japanese Journal of Applied Physics. 54: 110302. DOI: 10.7567/Jjap.54.110302 |
0.305 |
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| 2015 |
Duong LQ, Lin H, Tsai WF, Feng YP. Quantum anomalous Hall effect with field-tunable Chern number near Z2 topological critical point Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.115205 |
0.318 |
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| 2015 |
Chintalapati S, Shen L, Xiong Q, Feng YP. Magnetism in phosphorene: Interplay between vacancy and strain Applied Physics Letters. 107. DOI: 10.1063/1.4928754 |
0.317 |
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| 2015 |
Duong LQ, Das T, Feng YP, Lin H. Quantum anomalous Hall effect and a nontrivial spin-texture in ultra-thin films of magnetic topological insulators Journal of Applied Physics. 117. DOI: 10.1063/1.4917006 |
0.337 |
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| 2015 |
Song TT, Yang M, Callsen M, Wu QY, Zhou J, Wang SF, Wang SJ, Feng YP. Graphene stabilized high-κ dielectric Y2O3 (111) monolayers and their interfacial properties Rsc Advances. 5: 83588-83593. DOI: 10.1039/C5Ra16621G |
0.302 |
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| 2015 |
Li YL, Zhang DN, Qu SB, Yang M, Feng YP. The effect of oxygen vacancies on the electronic structures, magnetic properties and the stability of SrTiO3(001) surface Surface Science. 641: 37-50. DOI: 10.1016/J.Susc.2015.04.020 |
0.367 |
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| 2015 |
Yang F, Li SQ, Yan G, Feng JQ, Xiong XM, Zhang SN, Wang QY, liu GQ, Pang YC, Zou HF, Li CS, Feng Y. Improved superconducting properties in Ti-doped MgB2 prepared by two-step reaction method and high-energy ball milling Journal of Alloys and Compounds. 622: 714-718. DOI: 10.1016/J.Jallcom.2014.10.186 |
0.304 |
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| 2015 |
Herng TS, Xiao W, Poh SM, He F, Sutarto R, Zhu X, Li R, Yin X, Diao C, Yang Y, Huang X, Yu X, Feng YP, Rusydi A, Ding J. Achieving a high magnetization in sub-nanostructured magnetite films by spin-flipping of tetrahedral Fe3+ cations Nano Research. DOI: 10.1007/S12274-015-0798-7 |
0.339 |
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| 2015 |
Cai Y, Ke Q, Zhang G, Feng YP, Shenoy VB, Zhang YW. Giant phononic anisotropy and unusual anharmonicity of phosphorene: Interlayer coupling and strain engineering Advanced Functional Materials. 25: 2230-2236. DOI: 10.1002/Adfm.201404294 |
0.341 |
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| 2014 |
Liu Y, Yuan L, Yang M, Zheng Y, Li L, Gao L, Nerngchamnong N, Nai CT, Sangeeth CS, Feng YP, Nijhuis CA, Loh KP. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers. Nature Communications. 5: 5461. PMID 25410480 DOI: 10.1038/Ncomms6461 |
0.305 |
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| 2014 |
Chintalapati S, Yang M, Lau SP, Feng YP. Surface magnetism of Mg doped AlN: a first principle study. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 26: 435801. PMID 25299568 DOI: 10.1088/0953-8984/26/43/435801 |
0.316 |
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| 2014 |
Cai Y, Bai Z, Pan H, Feng YP, Yakobson BI, Zhang YW. Constructing metallic nanoroads on a MoS₂ monolayer via hydrogenation. Nanoscale. 6: 1691-7. PMID 24343306 DOI: 10.1039/C3Nr05218D |
0.359 |
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| 2014 |
Bai Z, Shen L, Cai Y, Wu Q, Zeng M, Han G, Feng YP. Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctions New Journal of Physics. 16: 103033. DOI: 10.1088/1367-2630/16/10/103033 |
0.347 |
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| 2014 |
Yang K, Dai Y, Huang B, Feng YP. First-principles GGA+U study of the different conducting properties in pentavalent-ion-doped anatase and rutile TiO2 Journal of Physics D. 47: 275101. DOI: 10.1088/0022-3727/47/27/275101 |
0.356 |
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| 2014 |
Yu JY, Huang K, Wu HY, Feng Y, Wang L, Tang Z, Zhang L. Exchange bias and magnetic properties induced by intrinsic structural distortion in CaMn3O6 nanoribbons Applied Physics Letters. 104: 22407. DOI: 10.1063/1.4862203 |
0.343 |
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| 2014 |
Rashid M, Hussain F, Imran M, Abo GS, Ahmad SA, Feng YP. First-principles study of structural, electronic and optical properties of Zn1−xMgxO ternary alloys using modified Becke–Johnson potential Materials Science in Semiconductor Processing. 18: 114-121. DOI: 10.1016/J.Mssp.2013.10.031 |
0.345 |
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| 2014 |
Li S, Gan CK, Son YW, Feng YP, Quek SY. Anomalous length-independent frontier resonant transmission peaks in armchair graphene nanoribbon molecular wires Carbon. 76: 285-291. DOI: 10.1016/J.Carbon.2014.04.079 |
0.317 |
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| 2014 |
Liu ZQ, Lu W, Zeng SW, Deng JW, Huang Z, Li CJ, Motapothula M, Lü WM, Sun L, Han K, Zhong JQ, Yang P, Bao NN, Chen W, Chen JS, ... Feng YP, et al. Bandgap Control of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3 Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201400155 |
0.321 |
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| 2013 |
Shen L, Zeng M, Lu Y, Yang M, Feng YP. Simultaneous magnetic and charge doping of topological insulators with carbon. Physical Review Letters. 111: 236803. PMID 24476296 DOI: 10.1103/Physrevlett.111.236803 |
0.342 |
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| 2013 |
Liu S, Feng YP, Zhang C. Communication: electronic and transport properties of molecular junctions under a finite bias: a dual mean field approach. The Journal of Chemical Physics. 139: 191103. PMID 24320309 DOI: 10.1063/1.4833677 |
0.318 |
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| 2013 |
Yao G, Luo Z, Pan F, Xu W, Feng YP, Wang XS. Evolution of topological surface states in antimony ultra-thin films. Scientific Reports. 3: 2010. PMID 23774610 DOI: 10.1038/Srep02010 |
0.326 |
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| 2013 |
Cai Y, Bai Z, Chintalapati S, Zeng Q, Feng YP. Transition metal atoms pathways on rutile TiO2 (110) surface: distribution of Ti3+ states and evidence of enhanced peripheral charge accumulation. The Journal of Chemical Physics. 138: 154711. PMID 23614440 DOI: 10.1063/1.4801025 |
0.324 |
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| 2013 |
Bai Z, Shen L, Wu Q, Zeng M, Wang J, Han G, Feng YP. Boron diffusion induced symmetry reduction and scattering in CoFeB/MgO/CoFeB magnetic tunnel junctions Physical Review B. 87: 14114. DOI: 10.1103/Physrevb.87.014114 |
0.488 |
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| 2013 |
Bai Z, Cai Y, Shen L, Han G, Feng Y. High-performance giant-magnetoresistance junctions based on the all-Heusler architecture with matched energy bands and Fermi surfaces Applied Physics Letters. 102: 152403. DOI: 10.1063/1.4802581 |
0.335 |
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| 2013 |
Wu HF, Wang Y, Lu YH, Feng YP, He PM. Substitutional adsorption mechanism and controllable magnetic properties of Mn on PbTe(1 1 1) surface Applied Surface Science. 265: 120-123. DOI: 10.1016/J.Apsusc.2012.10.147 |
0.323 |
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| 2013 |
Lu YH, Jin H, Zhu H, Yang S, Zhang C, Jiang JZ, Feng YP. A Possible Reaction Pathway to Fabricate a Half‐Metallic Wire on a Silicon Surface Advanced Functional Materials. 23: 2233-2238. DOI: 10.1002/Adfm.201202142 |
0.32 |
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| 2012 |
Sun JT, Huang H, Wong SL, Gao HJ, Feng YP, Wee AT. Energy-gap opening in a Bi110 nanoribbon induced by edge reconstruction. Physical Review Letters. 109: 246804. PMID 23368363 DOI: 10.1103/Physrevlett.109.246804 |
0.369 |
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| 2012 |
Huang H, Wei D, Sun J, Wong SL, Feng YP, Neto AH, Wee AT. Spatially resolved electronic structures of atomically precise armchair graphene nanoribbons. Scientific Reports. 2: 983. PMID 23248746 DOI: 10.1038/Srep00983 |
0.315 |
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| 2012 |
Rusydi A, Dhar S, Barman AR, Ariando, Qi DC, Motapothula M, Yi JB, Santoso I, Feng YP, Yang K, Dai Y, Yakovlev NL, Ding J, Wee AT, Neuber G, et al. Cationic-vacancy-induced room-temperature ferromagnetism in transparent, conducting anatase Ti1-xTaxO2 (x~0.05) thin films. Philosophical Transactions. Series a, Mathematical, Physical, and Engineering Sciences. 370: 4927-43. PMID 22987036 DOI: 10.1098/Rsta.2012.0198 |
0.338 |
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| 2012 |
Zhou M, Feng YP, Zhang C. Gold clusters on Nb-doped SrTiO3: effects of metal-insulator transition on heterogeneous Au nanocatalysis Physical Chemistry Chemical Physics. 14: 9660-9665. PMID 22692469 DOI: 10.1039/C2Cp40939A |
0.335 |
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| 2012 |
Li D, Yang M, Zhao S, Cai Y, Feng Y. First principles study of Bismuth alloying effects in GaAs saturable absorber Optics Express. 20: 11574-11580. PMID 22565776 DOI: 10.1364/Oe.20.011574 |
0.342 |
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| 2012 |
Liu ZQ, Ming Y, Lü WM, Huang Z, Wang X, Zhang BM, Li CJ, Gopinadhan K, Zeng SW, Annadi A, Feng YP, Venkatesan T, Ariando. Tailoring the electronic properties of SrRuO3 films in SrRuO3/LaAlO3 superlattices Applied Physics Letters. 101. DOI: 10.1063/1.4768230 |
0.335 |
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| 2012 |
Sun J, Wee ATS, Feng YP. Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure Aip Advances. 2: 32133. DOI: 10.1063/1.4745599 |
0.317 |
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| 2012 |
Bai ZQ, Lu YH, Shen L, Ko V, Han GC, Feng YP. Transport properties of high-performance all-Heusler Co2CrSi/Cu2CrAl/Co2CrSi giant magnetoresistance device Journal of Applied Physics. 111: 93911. DOI: 10.1063/1.4712301 |
0.331 |
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| 2012 |
Bai Z, Cai Y, Shen L, Yang M, Ko V, Han G, Feng Y. Magnetic and transport properties of Mn3−xGa/MgO/Mn3−xGa magnetic tunnel junctions: A first-principles study Applied Physics Letters. 100: 22408. DOI: 10.1063/1.3676195 |
0.332 |
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| 2012 |
Zhu H, Jia H, Liu D, Feng Y, Zhang L, Lai B, He T, Ma Y, Wang Y, Yin J, Huang Y, Mai Y. Study of thermal stability of ZnO:B films grown by LPCVD technique Applied Surface Science. 258: 6018-6023. DOI: 10.1016/J.Apsusc.2012.02.098 |
0.304 |
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| 2011 |
Huang H, Sun JT, Feng YP, Chen W, Wee AT. Epitaxial growth of diindenoperylene ultrathin films on Ag(111) investigated by LT-STM and LEED. Physical Chemistry Chemical Physics : Pccp. 13: 20933-8. PMID 22005757 DOI: 10.1039/C1Cp22769F |
0.337 |
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| 2011 |
Zhou M, Lu Y, Cai Y, Zhang C, Feng Y. Adsorption of gas molecules on transition metal embedded graphene: a search for high-performance graphene-based catalysts and gas sensors. Nanotechnology. 22: 385502-385502. PMID 21869463 DOI: 10.1088/0957-4484/22/38/385502 |
0.302 |
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| 2011 |
Lu YH, Russo SP, Feng YP. Effect of nitrogen and intrinsic defect complexes on conversion efficiency of ZnO for hydrogen generation from water. Physical Chemistry Chemical Physics : Pccp. 13: 15973-6. PMID 21811735 DOI: 10.1039/C1Cp20908F |
0.326 |
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| 2011 |
Ariando, Wang X, Baskaran G, Liu ZQ, Huijben J, Yi JB, Annadi A, Barman AR, Rusydi A, Dhar S, Feng YP, Ding J, Hilgenkamp H, Venkatesan T. Electronic phase separation at the LaAlO₃/SrTiO₃ interface. Nature Communications. 2: 188. PMID 21304517 DOI: 10.1038/Ncomms1192 |
0.341 |
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| 2011 |
Xu B, Singh DJ, Cooper VR, Feng YP. Design of a low band gap oxide ferroelectric: Bi6Ti 4O17 Epl. 94. DOI: 10.1209/0295-5075/94/37006 |
0.309 |
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| 2011 |
Xu B, Lu YH, Sha ZD, Feng YP, Lin JY. Coupling of magnetic edge states in Li-intercalated bilayer and multilayer zigzag graphene nanoribbons Epl. 94: 27007. DOI: 10.1209/0295-5075/94/27007 |
0.321 |
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| 2011 |
Shen L, Yuan Z, Goh JQ, Zhou T, Liu B, Feng YP. The Effect of Introduced Defects on Saturation Magnetization and Magnetic Anisotropy Field of L1 $ _{0}$ FePt Ieee Transactions On Magnetics. 47: 2422-2424. DOI: 10.1109/Tmag.2011.2147771 |
0.303 |
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| 2011 |
Chai JW, Yang M, Chi DZ, Ong JLT, Wang SJ, Zhang Z, Pan JS, Feng YP, Chua SJ. Fabrication of a $\hbox{TiN}_{x}/\hbox{Ni/Au}$ Contact on ZnO Films With High Thermal Stability and Low Resistance Ieee Transactions On Electron Devices. 58: 4297-4300. DOI: 10.1109/Ted.2011.2169265 |
0.325 |
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| 2011 |
Liu ZQ, Leusink DP, Lü WM, Wang X, Yang XP, Gopinadhan K, Lin YT, Annadi A, Zhao YL, Barman AR, Dhar S, Feng YP, Su HB, Xiong G, Venkatesan T, et al. Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.165106 |
0.308 |
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| 2011 |
Xu B, Cooper VR, Singh DJ, Feng YP. Relationship between bond stiffness and electrical energy storage capacity in oxides: Density functional calculations for h-La2O3, MgO, and BeO Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.064115 |
0.304 |
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| 2011 |
Ni X, Leek ML, Wang JS, Feng YP, Li B. Anomalous thermal transport in disordered harmonic chains and carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.045408 |
0.679 |
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| 2011 |
Wong TI, Yang M, Feng YP, Chi DZ, Wang SJ. First-principles study of NiSi2/HfO2 interfaces: energetics and Schottky-barrier heights Journal of Physics D. 44: 405302. DOI: 10.1088/0022-3727/44/40/405302 |
0.313 |
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| 2011 |
Sun J, Chen L, Feng YP, Wee ATS. Substrate-mediated electron tunneling through molecule-electrode interfaces Applied Physics Letters. 99: 143122. DOI: 10.1063/1.3650248 |
0.319 |
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| 2011 |
Zeng M, Feng Y, Liang G. Thermally induced currents in graphene-based heterostructure Applied Physics Letters. 99: 123114. DOI: 10.1063/1.3641478 |
0.307 |
|
| 2011 |
He KH, Chen JS, Feng YP. First principles study of the electric field effect on magnetization and magnetic anisotropy of FeCo/MgO(001) thin film Applied Physics Letters. 99: 72503. DOI: 10.1063/1.3626598 |
0.3 |
|
| 2011 |
Xing GZ, Lu YH, Tian YF, Yi JB, Lim CC, Li YF, Li GP, Wang DD, Yao B, Ding J, Feng YP, Wu T. Defect-induced magnetism in undoped wide band gap oxides: Zinc vacancies in ZnO as an example Aip Advances. 1: 22152. DOI: 10.1063/1.3609964 |
0.354 |
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| 2011 |
Zhou M, Cai YQ, Zeng MG, Zhang C, Feng YP. Mn-doped thiolated Au25 nanoclusters: Atomic configuration, magnetic properties, and a possible high-performance spin filter Applied Physics Letters. 98: 143103. DOI: 10.1063/1.3575203 |
0.32 |
|
| 2011 |
Zeng M, Shen L, Yang M, Zhang C, Feng Y. Charge and spin transport in graphene-based heterostructure Applied Physics Letters. 98: 53101. DOI: 10.1063/1.3549154 |
0.3 |
|
| 2011 |
Ko V, Qiu J, Luo P, Han GC, Feng YP. Half-metallic Fe2CrSi and non-magnetic Cu2CrAl Heusler alloys for current-perpendicular-to-plane giant magneto-resistance: First principle and experimental study Journal of Applied Physics. 109. DOI: 10.1063/1.3540667 |
0.348 |
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| 2011 |
Lam K, Lu Y, Feng YP, Liang G. Stability and electronic structure of two dimensional Cx(BN)y compound Applied Physics Letters. 98: 022101. DOI: 10.1063/1.3535604 |
0.313 |
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| 2011 |
Chai JW, Yang M, Chen Q, Pan JS, Zhang Z, Feng YP, Wang SJ. Effects of nitrogen incorporation on the electronic structure of rutile-TiO2 Journal of Applied Physics. 109: 23707. DOI: 10.1063/1.3532051 |
0.313 |
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| 2011 |
Lu YH, Xu B, Zhang AH, Yang M, Feng YP. Hexagonal TiO2 for Photoelectrochemical Applications Journal of Physical Chemistry C. 115: 18042-18045. DOI: 10.1021/Jp205439X |
0.312 |
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| 2010 |
He AL, Wang XQ, Wu RQ, Lu YH, Feng YP. Adsorption of an Mn atom on a ZnO sheet and nanotube: a density functional theory study Journal of Physics: Condensed Matter. 22: 175501-175501. PMID 21393668 DOI: 10.1088/0953-8984/22/17/175501 |
0.329 |
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| 2010 |
Yi JB, Lim CC, Xing GZ, Fan HM, Van LH, Huang SL, Yang KS, Huang XL, Qin XB, Wang BY, Wu T, Wang L, Zhang HT, Gao XY, Liu T, ... ... Feng YP, et al. Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO. Physical Review Letters. 104: 137201. PMID 20481907 DOI: 10.1103/Physrevlett.104.137201 |
0.349 |
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| 2010 |
Shen L, Jin H, Ligatchev V, Yang SW, Sullivan MB, Feng Y. Oxidization states of metal atoms in linear bimetallic multi-sandwich molecules V(n)(FeCp2)(n+1) and magnetic moment enhancement mechanism of its 1D wire. Physical Chemistry Chemical Physics : Pccp. 12: 4555-9. PMID 20428533 DOI: 10.1039/B927272K |
0.343 |
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| 2010 |
Deng SZ, Fan HM, Wang M, Zheng MR, Yi JB, Wu RQ, Tan HR, Sow CH, Ding J, Feng YP, Loh KP. Thiol-capped ZnO nanowire/nanotube arrays with tunable magnetic properties at room temperature. Acs Nano. 4: 495-505. PMID 20028113 DOI: 10.1021/Nn901353X |
0.344 |
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| 2010 |
Yang K, Wu R, Shen L, Feng YP, Dai Y, Huang B. Origin of d 0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site Physical Review B. 81: 125211. DOI: 10.1103/Physrevb.81.125211 |
0.333 |
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| 2010 |
Zhao GP, Deng Y, Zhang HW, Chen L, Feng YP, Bo N. Thickness dependent magnetic reversal process and hysteresis loops in exchange-coupled hard-soft trilayers Journal of Applied Physics. 108: 93928. DOI: 10.1063/1.3506693 |
0.302 |
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| 2010 |
He AL, Wang XQ, Fan YQ, Feng YP. Electronic structure and magnetic properties of Mn-doped ZnO nanotubes: An ab initio study Journal of Applied Physics. 108: 84308. DOI: 10.1063/1.3493207 |
0.357 |
|
| 2010 |
Xu B, Lu YH, Feng YP, Lin JY. Density functional theory study of BN-doped graphene superlattice: Role of geometrical shape and size Journal of Applied Physics. 108: 73711. DOI: 10.1063/1.3487959 |
0.331 |
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| 2010 |
Lu YH, Xu B, Wu RQ, Feng YP. Two-dimensional electron or hole gas at ZnO/6H-SiC interface Applied Physics Letters. 96: 192109. DOI: 10.1063/1.3425667 |
0.315 |
|
| 2010 |
Yang YH, Feng Y, Zhu HG, Yang GW. Growth, structure, and cathodeluminescence of Eu-doped ZnO nanowires prepared by high-temperature and high-pressure pulsed-laser deposition Journal of Applied Physics. 107: 53502. DOI: 10.1063/1.3319671 |
0.3 |
|
| 2010 |
Chen Q, Feng Y, Chai J, Zhang Z, Pan J, Wang S. In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC Thin Solid Films. 518: e31-e33. DOI: 10.1016/J.Tsf.2010.03.116 |
0.319 |
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| 2010 |
Ko V, Han G, Feng YP. Electronic band structure matching for half- and full-Heusler alloys Journal of Magnetism and Magnetic Materials. 322: 2989-2993. DOI: 10.1016/J.Jmmm.2010.05.017 |
0.348 |
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| 2010 |
Yang M, Deng WS, Chen Q, Feng YP, Wong LM, Chai JW, Pan JS, Wang SJ, Ng CM. Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects Applied Surface Science. 256: 4850-4853. DOI: 10.1016/J.Apsusc.2010.01.115 |
0.313 |
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| 2010 |
Wang SJ, Wong TI, Chen Q, Yang M, Wong LM, Chai JW, Zhang Z, Pan JS, Feng YP. Atomic and electronic structures at ZnO and ZrO2 interface for transparent thin‐film transistors Physica Status Solidi (a). 207: 1731-1734. DOI: 10.1002/Pssa.200983756 |
0.356 |
|
| 2009 |
Fan H, Yi J, Yang Y, Kho K, Tan H, Shen Z, Ding J, Sun X, Olivo MC, Feng Y. Single-Crystalline Mfe2O4 Nanotubes/Nanoringssynthesized By Thermal Transformation Process For Biological Applications Acs Nano. 3: 2798-2808. PMID 19711908 DOI: 10.1021/Nn9006797 |
0.322 |
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| 2009 |
Ko V, Han G, Qiu J, Feng YP. The band structure-matched and highly spin-polarized Co2CrZ/Cu2CrAl Heusler alloys interface Applied Physics Letters. 95: 202502. DOI: 10.1063/1.3263952 |
0.34 |
|
| 2009 |
Chen Q, Yang M, Feng YP, Chai JW, Zhang Z, Pan JS, Wang SJ. Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation Applied Physics Letters. 95: 162104. DOI: 10.1063/1.3253420 |
0.31 |
|
| 2009 |
Yang M, Wu RQ, Chen Q, Deng WS, Feng YP, Chai JW, Pan JS, Wang SJ. Impact of oxide defects on band offset at GeO2/Ge interface Applied Physics Letters. 94: 142903. DOI: 10.1063/1.3115824 |
0.307 |
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| 2009 |
Yi JB, Shen L, Pan H, Van LH, Thongmee S, Hu JF, Ma YW, Ding J, Feng YP. Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping Journal of Applied Physics. 105. DOI: 10.1063/1.3073943 |
0.319 |
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| 2009 |
Yang M, Wu RQ, Deng WS, Shen L, Sha ZD, Cai YQ, Feng YP, Wang SJ. Electronic structures of β-Si3N4(0001)/Si(111) interfaces: Perfect bonding and dangling bond effects Journal of Applied Physics. 105: 24108. DOI: 10.1063/1.3072625 |
0.321 |
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| 2009 |
Lu Y, Zhou M, Zhang C, Feng Y. Metal-Embedded Graphene: A Possible Catalyst with High Activity Journal of Physical Chemistry C. 113: 20156-20160. DOI: 10.1021/Jp908829M |
0.303 |
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| 2009 |
Ouyang Y, Wang J, Liu F, Liu Y, Du Y, He Y, Feng Y. Density functional study of 3d-transition metal aluminides Journal of Molecular Structure: Theochem. 905: 106-112. DOI: 10.1016/J.Theochem.2009.03.018 |
0.302 |
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| 2009 |
Ouyang Y, Tao X, Chen H, Feng Y, Du Y, Liu Y. First-principles calculations of mechanical and thermodynamic properties of the Laves C15-Mg2RE (RE = La, Ce, Pr, Nd, Pm, Sm, Gd) Computational Materials Science. 47: 297-301. DOI: 10.1016/J.Commatsci.2009.08.003 |
0.317 |
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| 2009 |
Tay M, Wu YH, Han GC, Chen YB, Pan XQ, Wang SJ, Yang P, Feng YP. Structural, optical, magnetic and electrical properties of Zn1−xCoxO thin films Journal of Materials Science: Materials in Electronics. 20: 60-73. DOI: 10.1007/S10854-008-9607-3 |
0.318 |
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| 2008 |
Pan H, Feng YP, Lin J. Electronic Structures of AlGaN2 Nanotubes and AlN-GaN Nanotube Superlattice. Journal of Chemical Theory and Computation. 4: 703-707. PMID 26621085 DOI: 10.1021/Ct7003116 |
0.326 |
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| 2008 |
Pan H, Feng YP. Semiconductor nanowires and nanotubes: effects of size and surface-to-volume ratio. Acs Nano. 2: 2410-2414. PMID 19206409 DOI: 10.1021/Nn8004872 |
0.319 |
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| 2008 |
Shen L, Yang SW, Ng MF, Ligatchev V, Zhou L, Feng Y. Charge-transfer-based mechanism for half-metallicity and ferromagnetism in one-dimensional organometallic sandwich molecular wires. Journal of the American Chemical Society. 130: 13956-60. PMID 18798617 DOI: 10.1021/Ja804053A |
0.31 |
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| 2008 |
Shen L, Wu RQ, Pan H, Peng GW, Yang M, Sha ZD, Feng YP. Mechanism of ferromagnetism in nitrogen-doped ZnO: First-principle calculations Physical Review B. 78. DOI: 10.1103/Physrevb.78.073306 |
0.316 |
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| 2008 |
Yang M, Peng GW, Wu RQ, Deng WS, Shen L, Chen Q, Feng YP, Chai JW, Pan JS, Wang SJ. Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study Applied Physics Letters. 93: 222907. DOI: 10.1063/1.3040324 |
0.347 |
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| 2008 |
Chen Q, Feng YP, Chai JW, Zhang Z, Pan JS, Wang SJ. Band alignment and thermal stability of HfO2 gate dielectric on SiC Applied Physics Letters. 93: 52104. DOI: 10.1063/1.2969061 |
0.311 |
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| 2008 |
Wu RQ, Feng YP, Ouyang YF, Zhou P, Hu CH. Half-metallic NiO in zinc-blende structure from ab initio calculations Journal of Applied Physics. 104: 46103. DOI: 10.1063/1.2969053 |
0.367 |
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| 2008 |
Lu YH, He PM, Feng YP. Asymmetric Spin Gap Opening of Graphene on Cubic Boron Nitride (111) Substrate Journal of Physical Chemistry C. 112: 12683-12686. DOI: 10.1021/Jp802525V |
0.305 |
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| 2008 |
Al-Douri Y, Feng YP, Huan ACH. Optical investigations using ultra-soft pseudopotential calculations of Si0.5Ge0.5 alloy Solid State Communications. 148: 521-524. DOI: 10.1016/J.Ssc.2008.09.055 |
0.309 |
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| 2008 |
Ouyang Y, Chen H, Tong M, Du Y, Feng Y, Zhong X. Electronic calculation of Mn3AlN with anti-perovskite structure Computational Materials Science. 44: 97-101. DOI: 10.1016/J.Commatsci.2008.01.070 |
0.325 |
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| 2008 |
Zhao GP, Zhang HW, Feng YP, Yang C, Huang CW. Nucleation or pinning: Dominant coercivity mechanism in exchange-coupled permanent/composite magnets Computational Materials Science. 44: 122-126. DOI: 10.1016/J.Commatsci.2008.01.021 |
0.328 |
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| 2008 |
Yi JB, Pan H, Lin JY, Ding J, Feng YP, Thongmee S, Liu T, Gong H, Wang L. Ferromagnetism in ZnO Nanowires Derived from Electro‐deposition on AAO Template and Subsequent Oxidation Advanced Materials. 20: 1170-1174. DOI: 10.1002/Adma.200702387 |
0.329 |
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| 2007 |
Pan H, Ni Z, Yi J, Gao X, Liu C, Feng YP, Ding J, Lin J, Wee AT, Shen Z. Optical and magnetic properties of Ni-doped ZnO nanocones. Journal of Nanoscience and Nanotechnology. 7: 3620-3. PMID 18330182 DOI: 10.1166/Jnn.2007.807 |
0.34 |
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| 2007 |
Pan H, Yi JB, Shen L, Wu RQ, Yang JH, Lin JY, Feng YP, Ding J, Van LH, Yin JH. Room-temperature ferromagnetism in carbon-doped ZnO. Physical Review Letters. 99: 127201. PMID 17930547 DOI: 10.1103/Physrevlett.99.127201 |
0.324 |
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| 2007 |
Yi JB, Ding J, Feng YP, Peng GW, Chow GM, Kawazoe Y, Liu BH, Yin JH, Thongmee S. Size-dependent magnetism and spin-glass behavior of amorphous NiO bulk, clusters, and nanocrystals: Experiments and first-principles calculations Physical Review B. 76: 224402. DOI: 10.1103/Physrevb.76.224402 |
0.31 |
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| 2007 |
Wu RQ, Shen L, Yang M, Sha ZD, Cai YQ, Feng YP, Huang ZG, Wu QY. Possible efficient p-type doping of AlN using Be: An ab initio study Applied Physics Letters. 91: 152110. DOI: 10.1063/1.2799241 |
0.301 |
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| 2007 |
Yang M, Wang SJ, Peng GW, Wu RQ, Feng YP. Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric Applied Physics Letters. 91: 132906. DOI: 10.1063/1.2790075 |
0.314 |
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| 2007 |
Yang M, Wang SJ, Feng YP, Peng GW, Sun YY. Electronic structure of germanium nitride considered for gate dielectrics Journal of Applied Physics. 102: 13507. DOI: 10.1063/1.2747214 |
0.331 |
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| 2007 |
Zhou HL, Chua SJ, Pan H, Zhu YW, Osipowicz T, Liu W, Zang KY, Feng YP, Sow CH. Morphology Controllable ZnO Growth on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates The Journal of Physical Chemistry C. 111: 6405-6410. DOI: 10.1021/Jp067682I |
0.325 |
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| 2007 |
Wang SJ, Dong YF, Feng YP, Huan ACH. Band engineering in the high-k dielectrics gate stacks Microelectronic Engineering. 84: 2332-2335. DOI: 10.1016/J.Mee.2007.04.050 |
0.308 |
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| 2006 |
Pan H, Yi JB, Liu BH, Thongmee S, Ding J, Feng YP, Lin JY. Magnetic Properties of Highly-Ordered Ni, Co and Their Alloy Nanowires in AAO Templates Solid State Phenomena. 111: 123-126. DOI: 10.4028/Www.Scientific.Net/Ssp.111.123 |
0.336 |
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| 2006 |
SUN MJ, ZHAO GP, LIANG J, ZHOU G, LIM HS, FENG YP. A HYBRID MODEL ON HYSTERESIS LOOP AND COERCIVITY IN NANOSTRUCTURED PERMANENT MAGNETS International Journal of Nanoscience. 5: 627-631. DOI: 10.1142/S0219581X06004899 |
0.305 |
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| 2006 |
Gan CK, Feng YP, Srolovitz DJ. First-principles calculation of the thermodynamics of In x Ga 1 − x N alloys: Effect of lattice vibrations Physical Review B. 73: 235214. DOI: 10.1103/Physrevb.73.235214 |
0.344 |
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| 2006 |
Wu RQ, Peng GW, Liu L, Feng YP. Possible graphitic-boron-nitride-based metal-free molecular magnets from first principles study Journal of Physics: Condensed Matter. 18: 569-575. DOI: 10.1088/0953-8984/18/2/015 |
0.349 |
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| 2006 |
Mi YY, Wang SJ, Chai JW, Pan JS, Huan CHA, Feng YP, Ong CK. Effect of nitrogen doping on optical properties and electronic structures of SrTiO3 films Applied Physics Letters. 89: 231922. DOI: 10.1063/1.2403181 |
0.333 |
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| 2006 |
Wu RQ, Peng GW, Liu L, Feng YP, Huang ZG, Wu QY. Ferromagnetism in Mg-doped AlN from ab initio study Applied Physics Letters. 89: 142501. DOI: 10.1063/1.2358818 |
0.325 |
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| 2006 |
Wu RQ, Peng GW, Liu L, Feng YP. Wurtzite NiO: A potential half-metal for wide gap semiconductors Applied Physics Letters. 89: 082504. DOI: 10.1063/1.2335970 |
0.331 |
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| 2006 |
Wu RQ, Peng GW, Liu L, Feng YP, Huang ZG, Wu QY. Cu-doped GaN: A dilute magnetic semiconductor from first-principles study Applied Physics Letters. 89: 062505. DOI: 10.1063/1.2335773 |
0.334 |
|
| 2006 |
Pan H, Chen W, Feng YP, Ji W, Lin J. Optical limiting properties of metal nanowires Applied Physics Letters. 88: 223106. DOI: 10.1063/1.2208549 |
0.312 |
|
| 2006 |
Li Q, Dong YF, Wang SJ, Chai JW, Huan ACH, Feng YP, Ong CK. Evolution of Schottky barrier heights at Ni∕HfO2 interfaces Applied Physics Letters. 88: 222102. DOI: 10.1063/1.2208271 |
0.366 |
|
| 2006 |
Wang SJ, Chai JW, Dong YF, Feng YP, Sutanto N, Pan JS, Huan ACH. Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric Applied Physics Letters. 88: 192103. DOI: 10.1063/1.2202752 |
0.348 |
|
| 2006 |
Peng GW, Huan ACH, Feng YP. Energetic and magnetic properties of transition-metal nanowire encapsulated BxCyNz composite nanotubes Applied Physics Letters. 88: 193117. DOI: 10.1063/1.2202737 |
0.342 |
|
| 2006 |
Wu RQ, Liu L, Peng GW, Feng YP. First principles study on the interface of CrSb∕GaSb heterojunction Journal of Applied Physics. 99: 093703. DOI: 10.1063/1.2189204 |
0.328 |
|
| 2006 |
Dong YF, Wang SJ, Mi YY, Feng YP, Huan ACH. First-principles studies on initial growth of Ni on MgO(0 0 1) surface Surface Science. 600: 2154-2162. DOI: 10.1016/J.Susc.2006.03.005 |
0.317 |
|
| 2006 |
Feng YP, Lim AT-, Huang M, Ding F, Zheng J-. Relative stability and electronic properties of group IV phosphides and nitrides Computational Materials Science. 36: 65-72. DOI: 10.1016/J.Commatsci.2004.11.014 |
0.309 |
|
| 2005 |
Pan H, Liu B, Yi J, Poh C, Lim S, Ding J, Feng Y, Huan CH, Lin J. Growth of single-crystalline Ni and Co nanowires via electrochemical deposition and their magnetic properties. The Journal of Physical Chemistry. B. 109: 3094-8. PMID 16851327 DOI: 10.1021/Jp0451997 |
0.332 |
|
| 2005 |
Zhao FF, Sun WX, Feng YP, Zheng JZ, Shen ZX, Pang CH, Chan LH. Approach to interface roughness of silicide thin films by micro-Raman imaging Journal of Vacuum Science & Technology B. 23: 468-474. DOI: 10.1116/1.1868646 |
0.306 |
|
| 2005 |
Pan H, Sun H, Poh C, Feng Y, Lin J. Single-crystal growth of metallic nanowires with preferred orientation Nanotechnology. 16: 1559-1564. DOI: 10.1088/0957-4484/16/9/025 |
0.302 |
|
| 2005 |
Feng YP, Lim ATL, Li MF. Negative-U property of oxygen vacancy in cubic HfO2 Applied Physics Letters. 87: 62105. DOI: 10.1063/1.2009826 |
0.318 |
|
| 2005 |
Wu RQ, Liu L, Peng GW, Feng YP. Magnetism in BN nanotubes induced by carbon doping Applied Physics Letters. 86: 122510. DOI: 10.1063/1.1890477 |
0.356 |
|
| 2005 |
Tian W, Sun HP, Pan XQ, Yu JH, Yeadon M, Boothroyd CB, Feng YP, Lukaszew RA, Clarke R. Hexagonal close-packed Ni nanostructures grown on the (001) surface of MgO Applied Physics Letters. 86: 131915. DOI: 10.1063/1.1890472 |
0.304 |
|
| 2005 |
Wang SJ, Dong YF, Huan CHA, Feng YP, Ong CK. The epitaxial ZrO2 on silicon as alternative gate dielectric: film growth, characterization and electronic structure calculations Materials Science and Engineering B-Advanced Functional Solid-State Materials. 118: 122-126. DOI: 10.1016/J.Mseb.2004.12.023 |
0.343 |
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| 2004 |
Huang M, Feng YP. Theoretical prediction of the structure and properties of Sn3N4 Journal of Applied Physics. 96: 4015-4017. DOI: 10.1063/1.1788836 |
0.3 |
|
| 2004 |
Zhang XH, Feng YP, Chen YZ. Density Functional Theory Studies on Structure, Spectra, and Electronic Properties of 3,7-Dinitrodibenzobromolium Cation and Chloride The Journal of Physical Chemistry A. 108: 7596-7602. DOI: 10.1021/Jp048158J |
0.313 |
|
| 2004 |
Zhang RL, Feng Y, Song WH, Dai JM, Ma YQ, Du JJ, Sun YP. The effect of Ho-doping and Ho-adding on electronic transport and magnetic properties of La0.67Ca0.33MnO3 Journal of Magnetism and Magnetic Materials. 281: 318-325. DOI: 10.1016/J.Jmmm.2004.04.121 |
0.302 |
|
| 2004 |
Huang M, Feng YP. Further study on structural and electronic properties of silicon phosphide compounds with 3:4 stoichiometry Computational Materials Science. 30: 371-375. DOI: 10.1016/J.Commatsci.2004.02.031 |
0.326 |
|
| 2004 |
Zhao GP, Lim HS, Feng YP, Ong CK. A hybrid model to calculate the magnetization of nanostructured permanent magnetic materials Computational Materials Science. 30: 308-313. DOI: 10.1016/J.Commatsci.2004.02.014 |
0.301 |
|
| 2003 |
Sun YY, Xu H, Zheng JC, Zhou JY, Feng YP, Huan ACH, Wee ATS, 郑金成. Multilayer relaxation of Cu(210) studied by layer-doubling LEED analysis and pseudopotential density functional theory calculations Physical Review B. 68: 115420. DOI: 10.1103/Physrevb.68.115420 |
0.319 |
|
| 2003 |
Liu L, Feng YP, Shen ZX. Structural and electronic properties of h-BN Physical Review B. 68: 104102. DOI: 10.1103/Physrevb.68.104102 |
0.306 |
|
| 2001 |
Lim AT, Feng YP. Electronic structure of GaAs1−xNx alloys Materials Science in Semiconductor Processing. 4: 577-580. DOI: 10.1016/S1369-8001(02)00021-5 |
0.341 |
|
| 2001 |
Wang L, Ding J, Li Y, Feng Y, Wang X, Phuc N, Dan N. A magnetic and Mössbauer study of melt-spun Nd60Fe30Al10 Journal of Magnetism and Magnetic Materials. 224: 143-152. DOI: 10.1016/S0304-8853(00)00703-4 |
0.3 |
|
| 2000 |
Ong CK, Feng YP, Zhao GP, Lim HS, Dan W. The reversal mechanism and coercivity of permanent magnetic materials Journal of Applied Physics. 87: 5532-5534. DOI: 10.1063/1.373395 |
0.305 |
|
| 2000 |
Rao XS, Ong CK, Feng YP. Magnetic-field-induced anomalous microwave response in superconducting YBa2Cu3O7−δ thin films Applied Physics Letters. 77: 2897-2899. DOI: 10.1063/1.1320862 |
0.303 |
|
| 1999 |
Zhao GP, Lim HS, Ong CK, Feng YP. Remanence enhancement in nano-structured composite magnets Journal of Physics: Condensed Matter. 11: 3323-3334. DOI: 10.1088/0953-8984/11/16/013 |
0.315 |
|
| 1998 |
Zhang GW, Feng YP, Ong CK. Electronic and magnetic properties of intermetallic compound YCo5 Journal of Magnetism and Magnetic Materials. 184: 215-221. DOI: 10.1016/S0304-8853(97)01092-5 |
0.318 |
|
| 1996 |
Zhang GW, Feng YP, Ong CK. Electronic structure and magnetic properties of TMRh 12 clusters European Physical Journal D. 38: 241-247. DOI: 10.1007/S004600050088 |
0.32 |
|
| 1995 |
Poon HC, Feng ZC, Feng YP, Li MF. Relativistic band structure of ternary II-VI semiconductor alloys containing Cd, Zn, Se and Te Journal of Physics: Condensed Matter. 7: 2783-2799. DOI: 10.1088/0953-8984/7/14/017 |
0.315 |
|
| 1995 |
Guo Q, Poon HC, Feng YP, Ong CK. Band structure of Mg1-xZnxSySe1-y epitaxially grown on GaAs Semiconductor Science and Technology. 10: 677-681. DOI: 10.1088/0268-1242/10/5/018 |
0.367 |
|
| 1994 |
Teo KL, Feng YP, Li MF, Chong TC, Xia JB. Band-Structure Of Mg1-Xznxsyse1-Y Semiconductor Science and Technology. 9: 349-355. DOI: 10.1088/0268-1242/9/4/003 |
0.333 |
|
| 1993 |
Feng YP, Teo KL, Li MF, Poon HC, Ong CK, Xia JB. Empirical Pseudopotential Band-Structure Calculation For Zn1-Xcdxsyse1-Y Quaternary Alloy Journal of Applied Physics. 74: 3948-3955. DOI: 10.1063/1.354462 |
0.325 |
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