Year |
Citation |
Score |
2024 |
Raffaelle PR, Wang GT, Shestopalov AA. Light-Mediated Contact Printing of Phosphorus Species onto Silicon Using Carbene-Based Molecular Layers. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 38814003 DOI: 10.1021/acs.langmuir.4c00763 |
0.302 |
|
2023 |
Raffaelle PR, Wang GT, Shestopalov AA. Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using -Halogen-succinimides. Acs Applied Materials & Interfaces. 15: 55139-55149. PMID 37965814 DOI: 10.1021/acsami.3c13269 |
0.366 |
|
2022 |
Parke T, Silva-Quinones D, Wang GT, Teplyakov AV. The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. PMID 36516050 DOI: 10.1002/cphc.202200724 |
0.663 |
|
2021 |
Turner EM, Campbell Q, Pizarro J, Yang H, Sapkota KR, Lu P, Baczewski AD, Wang GT, Jones KS. Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires. Nano Letters. PMID 34582219 DOI: 10.1021/acs.nanolett.1c01670 |
0.312 |
|
2021 |
Frederick E, Dwyer K, Wang GT, Misra S, Butera RE. The stability of Cl-, Br-, and I-passivated Si(100)-(2×1) in ambient environments for atomically-precise pattern preservation. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 34348242 DOI: 10.1088/1361-648X/ac1aa4 |
0.363 |
|
2021 |
Silva-Quinones D, Butera RE, Wang GT, Teplyakov AV. Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100). Langmuir : the Acs Journal of Surfaces and Colloids. PMID 34062064 DOI: 10.1021/acs.langmuir.1c00763 |
0.643 |
|
2020 |
Silva-Quinones D, He C, Butera RE, Wang GT, Teplyakov AV. Reaction of BCl with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry. Applied Surface Science. 533. PMID 33100450 DOI: 10.1016/J.Apsusc.2020.146907 |
0.716 |
|
2020 |
Silva-Quinones D, He C, Dwyer KJ, Butera RE, Wang GT, Teplyakov AV. Reaction of Hydrazine with Solution- and Vacuum-Prepared Selectively Terminated Si(100) Surfaces: Pathways to the Formation of Direct Si-N Bonds. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 33086003 DOI: 10.1021/acs.langmuir.0c02088 |
0.693 |
|
2019 |
Sapkota KR, Lu P, Medlin DL, Wang GT. High temperature synthesis and characterization of ultrathin tellurium nanostructures Apl Materials. 7: 81103. DOI: 10.1063/1.5109899 |
0.325 |
|
2018 |
Golam Sarwar ATM, Leung B, Wang GT, Myers RC. Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays Crystal Growth & Design. 18: 1191-1197. DOI: 10.1021/Acs.Cgd.7B01725 |
0.34 |
|
2017 |
Li C, Wright JB, Liu S, Lu P, Figiel JJ, Leung B, Chow WW, Brener I, Koleske DD, Luk TS, Feezell DF, Brueck SR, Wang GT. Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers. Nano Letters. PMID 28118019 DOI: 10.1021/Acs.Nanolett.6B04483 |
0.339 |
|
2016 |
Wang GT. III-Nitride nanowire lasers: fabrication and control of optical properties(Conference Presentation) Proceedings of Spie. 9924: 992402. DOI: 10.1117/12.2239450 |
0.325 |
|
2016 |
Boubanga-Tombet S, Wright JB, Lu P, Williams MRC, Li C, Wang GT, Prasankumar RP. Ultrafast Carrier Capture and Auger Recombination in Single GaN/InGaN Multiple Quantum Well Nanowires Acs Photonics. 3: 2237-2242. DOI: 10.1021/Acsphotonics.6B00622 |
0.324 |
|
2015 |
Song E, Li Q, Swartzentruber B, Pan W, Wang GT, Martinez JA. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires. Nanotechnology. 27: 015204. PMID 26606258 DOI: 10.1088/0957-4484/27/1/015204 |
0.35 |
|
2015 |
Léonard F, Song E, Li Q, Swartzentruber B, Martinez JA, Wang GT. Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires. Nano Letters. PMID 26529491 DOI: 10.1021/Acs.Nanolett.5B03572 |
0.338 |
|
2015 |
Liu S, Li C, Figiel JJ, Brueck SR, Brener I, Wang GT. Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure. Nanoscale. 7: 9581-8. PMID 25952721 DOI: 10.1039/C5Nr01855B |
0.302 |
|
2015 |
Lin Y, Leung B, Li Q, Figiel JJ, Wang GT. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy Journal of Crystal Growth. 427: 67-71. DOI: 10.1016/J.Jcrysgro.2015.07.006 |
0.318 |
|
2014 |
Xu H, Hurtado A, Wright JB, Li C, Liu S, Figiel JJ, Luk TS, Brueck SR, Brener I, Balakrishnan G, Li Q, Wang GT. Polarization control in GaN nanowire lasers. Optics Express. 22: 19198-203. PMID 25321005 DOI: 10.1364/Oe.22.019198 |
0.301 |
|
2014 |
Pan W, Dimakis E, Wang GT, Moustakas TD, Tsui DC. Two-dimensional electron gas in monolayer InN quantum wells Applied Physics Letters. 105. DOI: 10.1063/1.4902916 |
0.316 |
|
2014 |
Wang GT, Li Q, Wierer JJ, Koleske DD, Figiel JJ. Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs Physica Status Solidi (a) Applications and Materials Science. 211: 748-751. DOI: 10.1002/Pssa.201300491 |
0.31 |
|
2013 |
Howell SL, Padalkar S, Yoon K, Li Q, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ. Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy. Nano Letters. 13: 5123-8. PMID 24099617 DOI: 10.1021/Nl402331U |
0.302 |
|
2013 |
Riley JR, Padalkar S, Li Q, Lu P, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ. Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array. Nano Letters. 13: 4317-25. PMID 23919559 DOI: 10.1021/Nl4021045 |
0.328 |
|
2013 |
Zhang S, Li Y, Fathololoumi S, Nguyen HPT, Wang Q, Mi Z, Li Q, Wang GT. On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping Aip Advances. 3: 082103. DOI: 10.1063/1.4817834 |
0.364 |
|
2012 |
Zhao S, Fathololoumi S, Bevan KH, Liu DP, Kibria MG, Li Q, Wang GT, Guo H, Mi Z. Tuning the surface charge properties of epitaxial InN nanowires Nano Letters. 12: 2877-2882. PMID 22545811 DOI: 10.1021/Nl300476D |
0.475 |
|
2012 |
Riley JR, Bernal RA, Li Q, Espinosa HD, Wang GT, Lauhon LJ. Atom probe tomography of a-axis GaN nanowires: analysis of nonstoichiometric evaporation behavior. Acs Nano. 6: 3898-906. PMID 22515737 DOI: 10.1021/Nn2050517 |
0.32 |
|
2012 |
Wang GT, Li Q, Wierer J, Figiel J, Wright JB, Luk TS, Brener I. Top-down fabrication of GaN-based nanorod LEDs and lasers Proceedings of Spie - the International Society For Optical Engineering. 8278. DOI: 10.1117/12.909377 |
0.327 |
|
2012 |
Zhao S, Mi Z, Kibria MG, Li Q, Wang GT. Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires Physical Review B. 85. DOI: 10.1103/Physrevb.85.245313 |
0.469 |
|
2012 |
Kar A, Li Q, Upadhya PC, Seo MA, Wright J, Luk TS, Wang GT, Prasankumar RP. The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires Applied Physics Letters. 101: 143104. DOI: 10.1063/1.4756915 |
0.354 |
|
2012 |
Li Q, Figiel JJ, Wang GT, Xu H, Balakrishnan G. GaN epitaxy on Cu(110) by metal organic chemical vapor deposition Applied Physics Letters. 100: 192110. DOI: 10.1063/1.4714738 |
0.3 |
|
2011 |
Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays. Optics Express. 19: 25528-34. PMID 22273946 DOI: 10.1364/Oe.19.025528 |
0.364 |
|
2011 |
Subramania G, Li Q, Lee YJ, Figiel JJ, Wang GT, Fischer AJ. Gallium nitride based logpile photonic crystals. Nano Letters. 11: 4591-6. PMID 21970551 DOI: 10.1021/Nl201867V |
0.301 |
|
2011 |
Huang JY, Zheng H, Mao SX, Li Q, Wang GT. In situ nanomechanics of GaN nanowires. Nano Letters. 11: 1618-22. PMID 21417390 DOI: 10.1021/Nl200002X |
0.337 |
|
2011 |
Wang GT, Li Q, Huang J, Talin AA, Armstrong A, Upadhya PC, Prasankumar RP. III-nitride nanowires: novel materials for solid-state lighting Proceedings of Spie. 7954. DOI: 10.1117/12.872776 |
0.323 |
|
2011 |
Baird L, Ong CP, Cole RA, Haegel NM, Talin AA, Li Q, Wang GT. Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires Applied Physics Letters. 98. DOI: 10.1063/1.3573832 |
0.301 |
|
2010 |
Li Q, Wang GT. Spatial distribution of defect luminescence in GaN nanowires. Nano Letters. 10: 1554-8. PMID 20392110 DOI: 10.1021/Nl903517T |
0.43 |
|
2010 |
Wang GT, Li Q, Huang J, Talin AA, Lin Y, Arslan I, Armstrong A, Upadhya PC, Prasankumar RP. III-nitride nanowires: growth, properties, and applications Proceedings of Spie. 7768. DOI: 10.1117/12.859404 |
0.313 |
|
2010 |
Upadhya PC, Li Q, Wang GT, Fischer AJ, Taylor AJ, Prasankumar RP. The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/2/024017 |
0.338 |
|
2010 |
Armstrong A, Li Q, Lin Y, Talin AA, Wang GT. GaN nanowire surface state observed using deep level optical spectroscopy Applied Physics Letters. 96: 163106. DOI: 10.1063/1.3404182 |
0.425 |
|
2009 |
Prasankumar RP, Upadhya PC, Li Q, Smith N, Choi SG, Azad AK, Talbayev D, Wang GT, Fischer AJ, Hollingsworth J, Trugman SA, Picraux ST, Taylor AJ. Ultrafast carrier dynamics in semiconductor nanowires Proceedings of Spie - the International Society For Optical Engineering. 7406. DOI: 10.1117/12.828022 |
0.313 |
|
2009 |
Armstrong A, Li Q, Bogart KHA, Lin Y, Wang GT, Talin AA. Deep level optical spectroscopy of GaN nanorods Journal of Applied Physics. 106: 53712. DOI: 10.1063/1.3211317 |
0.316 |
|
2009 |
Li Q, Figiel JJ, Wang GT. Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres Applied Physics Letters. 94: 231105. DOI: 10.1063/1.3152012 |
0.329 |
|
2009 |
Lin Y, Li Q, Armstrong A, Wang GT. In situ scanning electron microscope electrical characterization of GaN nanowire nanodiodes using tungsten and tungsten/gallium nanoprobes Solid State Communications. 149: 1608-1610. DOI: 10.1016/J.Ssc.2009.06.035 |
0.334 |
|
2009 |
Armstrong A, Wang GT, Talin AA. Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires Journal of Electronic Materials. 38: 484-489. DOI: 10.1007/S11664-008-0569-2 |
0.389 |
|
2008 |
Talin AA, Wang GT, Lai E, Anderson RJ. Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires Applied Physics Letters. 92: 93105. DOI: 10.1063/1.2889941 |
0.314 |
|
2008 |
Arslan I, Talin AA, Wang GT. Three-dimensional visualization of surface defects in core-shell nanowires Journal of Physical Chemistry C. 112: 11093-11097. DOI: 10.1021/Jp804194S |
0.379 |
|
2008 |
Li Q, Creighton JR, Wang GT. The role of collisions in the aligned growth of vertical nanowires Journal of Crystal Growth. 310: 3706-3709. DOI: 10.1016/J.Jcrysgro.2008.05.026 |
0.309 |
|
2007 |
Creighton JR, Wang GT, Coltrin ME. Fundamental chemistry and modeling of group-III nitride MOVPE Journal of Crystal Growth. 298: 2-7. DOI: 10.1016/J.Jcrysgro.2006.10.060 |
0.35 |
|
2006 |
Wang GT, Talin AA, Werder DJ, Creighton JR, Lai E, Anderson RJ, Arslan I. Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition Nanotechnology. 17: 5773-5780. DOI: 10.1088/0957-4484/17/23/011 |
0.35 |
|
2005 |
Creighton JR, Wang GT. Kinetics of metal organic-ammonia adduct decomposition: implications for group-III nitride MOCVD. The Journal of Physical Chemistry. A. 109: 10554-62. PMID 16834311 DOI: 10.1021/Jp054380S |
0.312 |
|
2004 |
Wang GT, Creighton JR. Complex Formation between Magnesocene (MgCp2) and NH3: Implications for p-Type Doping of Group III Nitrides and the Mg Memory Effect Journal of Physical Chemistry A. 108: 4873-4877. DOI: 10.1021/Jp036494E |
0.364 |
|
2003 |
Wang GT, Mui C, Tannaci JF, Filler MA, Musgrave CB, Bent SF. Reactions of cyclic aliphatic and aromatic amines on Ge(100)-2×1 and Si(100)-2×1 Journal of Physical Chemistry B. 107: 4982-4996. DOI: 10.1021/Jp026864J |
0.78 |
|
2002 |
Wang GT, Mui C, Musgrave CB, Bent SF. Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1. Journal of the American Chemical Society. 124: 8990-9004. PMID 12137555 DOI: 10.1021/Ja026330W |
0.799 |
|
2002 |
Mui C, Han JH, Wang GT, Musgrave CB, Bent SF. Proton transfer reactions on semiconductor surfaces. Journal of the American Chemical Society. 124: 4027-38. PMID 11942841 DOI: 10.1021/Ja0171512 |
0.795 |
|
2001 |
Mui C, Wang GT, Bent SF, Musgrave CB. Reactions of methylamines at the Si(100)-2×1 surface Journal of Chemical Physics. 114: 10170-10180. DOI: 10.1063/1.1370056 |
0.808 |
|
2001 |
Wang GT, Mui C, Musgrave CB, Bent SF. Example of a thermodynamically controlled reaction on a semiconductor surface: Acetone on Ge(100)-2 × 1 Journal of Physical Chemistry B. 105: 12559-12565. DOI: 10.1021/Jp013058O |
0.806 |
|
2001 |
Wang GT, Mui C, Musgrave CB, Bent SF. Effect of a methyl-protecting group on the adsorption of pyrrolidine on Si(100)-2 × Journal of Physical Chemistry B. 105: 3295-3299. DOI: 10.1021/Jp004298R |
0.789 |
|
2001 |
Russell JN, Butler JE, Wang GT, Bent SF, Hovis JS, Hamers RJ, D'Evelyn MP. π bond versus radical character of the diamond (1 0 0)-2 × 1 surface Materials Chemistry and Physics. 72: 147-151. DOI: 10.1016/S0254-0584(01)00425-4 |
0.608 |
|
1999 |
Lal P, Teplyakov AV, Noah Y, Kong MJ, Wang GT, Bent SF. Adsorption of ethylene on the Ge(100)-2×1 surface: Coverage and time-dependent behavior Journal of Chemical Physics. 110: 10545-10553. DOI: 10.1063/1.478986 |
0.727 |
|
1999 |
Wang GT, Mui C, Musgrave CB, Bent SF. Cycloaddition of Cyclopentadiene and Dicyclopentadiene on Si(100)-2x1: Comparison of Monomer and Dimer Adsorption Journal of Physical Chemistry B. 103: 6803-6808. DOI: 10.1021/Jp991528X |
0.799 |
|
Show low-probability matches. |