☰

Keji Lai, Ph.D. - Publications

Affiliations: 
2006 Princeton University, Princeton, NJ 
Area:
condensed matter physics
Tree Info Similar researchers PubMed Report error

60 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Tu T, Zhang Y, Li T, Yu J, Liu L, Wu J, Tan C, Tang J, Liang Y, Zhang C, Dai Y, Han Y, Lai K, Peng H. Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors. Nano Letters. PMID 32881534 DOI: 10.1021/Acs.Nanolett.0C02951  0.301
2020 Alam MH, Xu Z, Chowdhury S, Jiang Z, Taneja D, Banerjee SK, Lai K, Braga MH, Akinwande D. Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers. Nature Communications. 11: 3203. PMID 32581271 DOI: 10.1038/S41467-020-17006-W  0.301
2020 Chu Z, Wang CY, Quan J, Zhang C, Lei C, Han A, Ma X, Tang HL, Abeysinghe D, Staab M, Zhang X, MacDonald AH, Tung V, Li X, Shih CK, Lai K, et al. Unveiling defect-mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave imaging. Proceedings of the National Academy of Sciences of the United States of America. PMID 32513713 DOI: 10.1073/Pnas.2004106117  0.368
2020 Huang YL, Zheng L, Chen P, Cheng X, Hsu SL, Yang T, Wu X, Ponet L, Ramesh R, Chen LQ, Artyukhin S, Chu YH, Lai K. Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO Domain Wall. Advanced Materials (Deerfield Beach, Fla.). e1905132. PMID 31967707 DOI: 10.1002/Adma.201905132  0.351
2020 Lin EL, Posadas AB, Zheng L, Wu HW, Chen P, Coffey BM, Lai K, Demkov AA, Smith DJ, Ekerdt JG. Epitaxial integration of ferroelectric and conductive perovskites on silicon Journal of Vacuum Science and Technology. 38: 22403. DOI: 10.1116/1.5134077  0.342
2020 Gangshettiwar A, Zhu Y, Jiang Z, Peng J, Wang Y, He J, Zhou J, Mao Z, Lai K. Emergence of a competing stripe phase near the Mott transition in Ti-doped bilayer calcium ruthenates Physical Review B. 101: 201106. DOI: 10.1103/Physrevb.101.201106  0.3
2019 Wu D, Li W, Rai A, Wu X, Movva HCP, Yogeesh MN, Chu Z, Banerjee SK, Akinwande D, Lai K. Visualization of Local Conductance in MoS/WSe Heterostructure Transistors. Nano Letters. PMID 30779591 DOI: 10.1021/Acs.Nanolett.8B05159  0.38
2019 Lin EL, Posadas AB, Zheng L, Elliott Ortmann J, Abel S, Fompeyrine J, Lai K, Demkov AA, Ekerdt JG. Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications Journal of Applied Physics. 126: 064101. DOI: 10.1063/1.5087571  0.314
2018 Chu Z, Han A, Lei C, Lopatin S, Li P, Wannlund D, Wu D, Herrera K, Zhang X, MacDonald AH, Li X, Li LJ, Lai K. Energy-resolved Photoconductivity Mapping in a Monolayer-bilayer WSe Lateral Heterostructure. Nano Letters. PMID 30289264 DOI: 10.1021/Acs.Nanolett.8B03318  0.368
2018 Wu X, Hao Z, Wu D, Zheng L, Jiang Z, Ganesan V, Wang Y, Lai K. Quantitative measurements of nanoscale permittivity and conductivity using tuning-fork-based microwave impedance microscopy. The Review of Scientific Instruments. 89: 043704. PMID 29716308 DOI: 10.1063/1.5022997  0.339
2018 Wu X, Du K, Zheng L, Wu D, Cheong S, Lai K. Microwave conductivity of ferroelectric domains and domain walls in a hexagonal rare-earth ferrite Physical Review B. 98: 81409. DOI: 10.1103/Physrevb.98.081409  0.302
2018 Kormondy KJ, Cho Y, Posadas AB, Zheng L, Lai K, Wang Q, Kim MJ, He Q, Borisevich AY, Downer MC, Demkov AA. Piezoelectric modulation of nonlinear optical response in BaTiO3 thin film Applied Physics Letters. 113: 132902. DOI: 10.1063/1.5045460  0.328
2017 Tsai Y, Chu Z, Han Y, Chuu CP, Wu D, Johnson A, Cheng F, Chou MY, Muller DA, Li X, Lai K, Shih CK. Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement. Advanced Materials (Deerfield Beach, Fla.). PMID 28891108 DOI: 10.1002/Adma.201703680  0.369
2017 Zhou Y, Wu D, Zhu Y, Cho Y, He Q, Yang X, Herrera K, Chu Z, Han Y, Downer M, Peng H, Lai K. Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes. Nano Letters. PMID 28841328 DOI: 10.1021/Acs.Nanolett.7B02198  0.316
2017 Lummen TTA, Leung J, Kumar A, Wu X, Ren Y, VanLeeuwen BK, Haislmaier RC, Holt M, Lai K, Kalinin SV, Gopalan V. Emergent Low-Symmetry Phases and Large Property Enhancements in Ferroelectric KNbO3 Bulk Crystals. Advanced Materials (Deerfield Beach, Fla.). PMID 28627750 DOI: 10.1002/Adma.201700530  0.312
2017 Wu X, Petralanda U, Zheng L, Ren Y, Hu R, Cheong SW, Artyukhin S, Lai K. Low-energy structural dynamics of ferroelectric domain walls in hexagonal rare-earth manganites. Science Advances. 3: e1602371. PMID 28508057 DOI: 10.1126/Sciadv.1602371  0.312
2017 Jiang Z, Wu X, Lee H, Lee J, Li J, Cheng G, Eom C, Levy J, Lai K. Direct imaging of sketched conductive nanostructures at the LaAlO3/SrTiO3 interface Applied Physics Letters. 111: 233104. DOI: 10.1063/1.5005917  0.378
2017 Tsai Y, Chu Z, Han Y, Chuu C, Wu D, Johnson A, Cheng F, Chou M, Muller DA, Li X, Lai K, Shih C. Photoconductivity: Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement (Adv. Mater. 41/2017) Advanced Materials. 29. DOI: 10.1002/Adma.201770298  0.303
2016 Wu D, Li X, Luan L, Wu X, Li W, Yogeesh MN, Ghosh R, Chu Z, Akinwande D, Niu Q, Lai K. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors. Proceedings of the National Academy of Sciences of the United States of America. PMID 27444021 DOI: 10.1073/Pnas.1605982113  0.396
2016 Tan C, Liu Y, Chou H, Kim JS, Wu D, Akinwande D, Lai K. Laser-assisted oxidation of multi-layer tungsten diselenide nanosheets Applied Physics Letters. 108. DOI: 10.1063/1.4942802  0.311
2015 Kundhikanjana W, Sheng Z, Yang Y, Lai K, Ma EY, Cui YT, Kelly MA, Nakamura M, Kawasaki M, Tokura Y, Tang Q, Zhang K, Li X, Shen ZX. Direct Imaging of Dynamic Glassy Behavior in a Strained Manganite Film. Physical Review Letters. 115: 265701. PMID 26765006 DOI: 10.1103/Physrevlett.115.265701  0.331
2015 Wu D, Pak AJ, Liu Y, Zhou Y, Wu X, Zhu Y, Lin M, Han Y, Ren Y, Peng H, Tsai YH, Hwang GS, Lai K. Thickness-dependent Dielectric Constant of Few-layer In2Se3 Nano-flakes. Nano Letters. PMID 26575786 DOI: 10.1021/Acs.Nanolett.5B03575  0.366
2015 Liu Y, Tan C, Chou H, Nayak A, Wu D, Ghosh R, Chang HY, Hao Y, Wang X, Kim JS, Piner R, Ruoff RS, Akinwande D, Lai K. Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates. Nano Letters. PMID 26171759 DOI: 10.1021/Acs.Nanolett.5B02069  0.312
2015 Ren Y, Yuan H, Wu X, Chen Z, Iwasa Y, Cui Y, Hwang HY, Lai K. Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors. Nano Letters. 15: 4730-6. PMID 26061780 DOI: 10.1021/Acs.Nanolett.5B01631  0.385
2015 Ma EY, Calvo MR, Wang J, Lian B, Mühlbauer M, Brüne C, Cui YT, Lai K, Kundhikanjana W, Yang Y, Baenninger M, König M, Ames C, Buhmann H, Leubner P, et al. Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry. Nature Communications. 6: 7252. PMID 26006728 DOI: 10.1038/Ncomms8252  0.347
2015 Kim JS, Liu Y, Zhu W, Kim S, Wu D, Tao L, Dodabalapur A, Lai K, Akinwande D. Toward air-stable multilayer phosphorene thin-films and transistors. Scientific Reports. 5: 8989. PMID 25758437 DOI: 10.1038/Srep08989  0.333
2015 Ponath P, Fredrickson K, Posadas AB, Ren Y, Wu X, Vasudevan RK, Okatan MB, Jesse S, Aoki T, McCartney MR, Smith DJ, Kalinin SV, Lai K, Demkov AA. Carrier density modulation in a germanium heterostructure by ferroelectric switching. Nature Communications. 6: 6067. PMID 25586049 DOI: 10.1038/Ncomms7067  0.343
2014 Liu Y, Ghosh R, Wu D, Ismach A, Ruoff R, Lai K. Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique. Nano Letters. 14: 4682-6. PMID 25019334 DOI: 10.1021/Nl501782E  0.362
2014 Yang Y, Ma EY, Cui YT, Haemmerli A, Lai K, Kundhikanjana W, Harjee N, Pruitt BL, Kelly M, Shen ZX. Shielded piezoresistive cantilever probes for nanoscale topography and electrical imaging Journal of Micromechanics and Microengineering. 24. DOI: 10.1088/0960-1317/24/4/045026  0.333
2013 Kundhikanjana W, Yang Y, Tanga Q, Zhang K, Lai K, Ma Y, Kelly MA, Li XX, Shen Z. Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope Semiconductor Science and Technology. 28: 025010. DOI: 10.1088/0268-1242/28/2/025010  0.323
2012 Cha JJ, Kong D, Hong SS, Analytis JG, Lai K, Cui Y. Weak antilocalization in Bi2(Se(x)Te(1-x))3 nanoribbons and nanoplates. Nano Letters. 12: 1107-11. PMID 22263839 DOI: 10.1021/Nl300018J  0.342
2012 Yang Y, Lai K, Tang Q, Kundhikanjana W, Kelly MA, Zhang K, Shen Z, Li X. Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging Journal of Micromechanics and Microengineering. 22: 115040. DOI: 10.1088/0960-1317/22/11/115040  0.301
2011 Lai K, Kundhikanjana W, Kelly MA, Shen ZX, Shabani J, Shayegan M. Imaging of Coulomb-driven quantum Hall edge states. Physical Review Letters. 107: 176809. PMID 22107561 DOI: 10.1103/Physrevlett.107.176809  0.37
2011 Kong D, Chen Y, Cha JJ, Zhang Q, Analytis JG, Lai K, Liu Z, Hong SS, Koski KJ, Mo SK, Hussain Z, Fisher IR, Shen ZX, Cui Y. Ambipolar field effect in the ternary topological insulator (Bi(x)Sb(1-x))2Te3 by composition tuning. Nature Nanotechnology. 6: 705-9. PMID 21963714 DOI: 10.1038/Nnano.2011.172  0.392
2011 Kong D, Cha JJ, Lai K, Peng H, Analytis JG, Meister S, Chen Y, Zhang HJ, Fisher IR, Shen ZX, Cui Y. Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃. Acs Nano. 5: 4698-703. PMID 21568290 DOI: 10.1021/Nn200556H  0.3
2011 Kundhikanjana W, Lai K, Kelly MA, Shen ZX. Cryogenic microwave imaging of metal-insulator transition in doped silicon. The Review of Scientific Instruments. 82: 033705. PMID 21456749 DOI: 10.1063/1.3554438  0.365
2011 Lai K, Kundhikanjana W, Kelly MA, Shen Z. Nanoscale microwave microscopy using shielded cantilever probes Applied Nanoscience. 1: 13-18. DOI: 10.1007/S13204-011-0002-7  0.333
2010 Hong SS, Kundhikanjana W, Cha JJ, Lai K, Kong D, Meister S, Kelly MA, Shen ZX, Cui Y. Ultrathin topological insulator Bi2Se3 nanoribbons exfoliated by atomic force microscopy. Nano Letters. 10: 3118-22. PMID 20698625 DOI: 10.1021/Nl101884H  0.382
2010 Kong D, Randel JC, Peng H, Cha JJ, Meister S, Lai K, Chen Y, Shen ZX, Manoharan HC, Cui Y. Topological insulator nanowires and nanoribbons. Nano Letters. 10: 329-33. PMID 20030392 DOI: 10.1021/Nl903663A  0.372
2010 Peng H, Lai K, Kong D, Meister S, Chen Y, Qi XL, Zhang SC, Shen ZX, Cui Y. Aharonov-Bohm interference in topological insulator nanoribbons. Nature Materials. 9: 225-9. PMID 20010826 DOI: 10.1038/Nmat2609  0.367
2009 Lai K, Peng H, Kundhikanjana W, Schoen DT, Xie C, Meister S, Cui Y, Kelly MA, Shen ZX. Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy. Nano Letters. 9: 1265-9. PMID 19215080 DOI: 10.1021/Nl900222J  0.365
2008 Lai K, Kundhikanjana W, Kelly M, Shen ZX. Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope. The Review of Scientific Instruments. 79: 063703. PMID 18601409 DOI: 10.1063/1.2949109  0.304
2008 Lai K, Kundhikanjana W, Kelly MA, Shen ZX. Calibration of shielded microwave probes using bulk dielectrics Applied Physics Letters. 93: 123105. DOI: 10.1063/1.2990638  0.307
2008 Liu J, Lu TM, Kim J, Lai K, Tsui DC, Xie YH. The proximity effect of the regrowth interface on two-dimensional electron density in strained Si Applied Physics Letters. 92. DOI: 10.1063/1.2899937  0.539
2008 Liu J, Kim JH, Xie YH, Lu TM, Lai K. Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processes Thin Solid Films. 517: 45-49. DOI: 10.1016/J.Tsf.2008.08.096  0.382
2007 Lai K, Ji MB, Leindecker N, Kelly MA, Shen ZX. Atomic-force-microscope-compatible near-field scanning microwave microscope with separated excitation and sensing probes Review of Scientific Instruments. 78: 63702. PMID 17614611 DOI: 10.1063/1.2746768  0.331
2007 Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.033314  0.529
2007 Lu TM, Liu J, Kim J, Lai K, Tsui DC, Xie YH. Capacitively induced high mobility two-dimensional electron gas in undoped Si Si1-x Gex heterostructures with atomic-layer-deposited dielectric Applied Physics Letters. 90. DOI: 10.1063/1.2736273  0.568
2007 Lu TM, Luhman DR, Lai K, Tsui DC, Pfeiffer LN, West KW. Undoped high mobility two-dimensional hole-channel GaAs/Al xGa1-xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric Applied Physics Letters. 90. DOI: 10.1063/1.2714094  0.54
2007 Zhu H, Lai K, Tsui DC, Bayrakci SP, Ong NP, Manfra M, Pfeiffer L, West K. Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies Solid State Communications. 141: 510-513. DOI: 10.1016/J.Ssc.2006.12.006  0.586
2006 Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Intervalley gap anomaly of two-dimensional electrons in silicon. Physical Review Letters. 96: 076805. PMID 16606125 DOI: 10.1103/Physrevlett.96.076805  0.525
2006 Lai K, Lu TM, Pan W, Tsui DC, Lyon S, Liu J, Xie YH, Mühlberger M, Schäffler F. Valley splitting of Si Si1-x Gex heterostructures in tilted magnetic fields Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.161301  0.524
2006 Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Quantum Hall ferromagnetism in a two-valley strained Si quantum well Physica E: Low-Dimensional Systems and Nanostructures. 34: 176-178. DOI: 10.1016/J.Physe.2006.03.009  0.511
2005 Lai K, Pan W, Tsui DC, Lyon SA, Mühlberger M, Schäffler F. Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.081313  0.561
2005 Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Lai K, Tsui DC, Shayegan M. Coulomb drag near the metal-insulator transition in two dimensions Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.115307  0.676
2005 Lai K, Ye PD, Pan W, Tsui DC, Lyon SA, Mühlberger M, Schäffler F. Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2076439  0.564
2004 Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Two-flux composite fermion series of the fractional quantum Hall states in strained Si. Physical Review Letters. 93: 156805. PMID 15524923 DOI: 10.1103/PhysRevLett.93.156805  0.459
2004 Lai K, Pan W, Tsui DC, Lyon S, Muhlberger M, Schaffler F. The two-flux composite fermion series of fractional quantum Hall states in strained (100) Si International Journal of Modern Physics B. 18: 3533-3535. DOI: 10.1142/S0217979204026950  0.491
2004 Lai K, Pan W, Tsui DC, Xie Y. Fractional quantum Hall effect atν=23and43in strained Si quantum wells Physical Review B. 69. DOI: 10.1103/Physrevb.69.125337  0.494
2003 Pan W, Lai K, Bayrakci SP, Ong NP, Tsui DC, Pfeiffer LN, West KW. Cyclotron resonance at microwave frequencies in two-dimensional hole system in AlGaAs/GaAs quantum wells Applied Physics Letters. 83: 3519-3521. DOI: 10.1063/1.1623008  0.502
Show low-probability matches.