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Sonny X. Li, Ph.D. - Publications

Affiliations: 
2006 University of California, Berkeley, Berkeley, CA, United States 
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21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Jones RE, Li SX, Yu KM, Ager JW, Haller EE, Walukiewicz W, Lu H, Schaff WJ. Properties of native point defects in In1-xAlxN alloys Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/9/095406  0.598
2007 Hsu L, Jones RE, Li SX, Yu KM, Walukiewicz W. Electron mobility in InN and III-N alloys Journal of Applied Physics. 102. DOI: 10.1063/1.2785005  0.441
2007 Jones R, Li S, Haller E, Genuchten vHE, Yu K, Ager J, Liliental-Weber Z, Walukiewicz W, Lu HH, Schaff W. High Electron Mobility InN Applied Physics Letters. 90: 162103. DOI: 10.1063/1.2722693  0.526
2007 Ager JW, Jones RE, Yamaguchi DM, Yu KM, Walukiewicz W, Li SX, Haller EE, Lu H, Schaff WJ. p-type InN and In-rich InGaN Physica Status Solidi (B). 244: 1820-1824. DOI: 10.1002/Pssb.200674762  0.454
2006 Jones RE, Yu KM, Li SX, Walukiewicz W, Ager JW, Haller EE, Lu H, Schaff WJ. Evidence for p-type doping of InN. Physical Review Letters. 96: 125505. PMID 16605926 DOI: 10.1103/Physrevlett.96.125505  0.471
2006 Walukiewicz W, Ager JW, Yu KM, Liliental-Weber Z, Wu J, Li SX, Jones RE, Denlinger JD. Structure and electronic properties of InN and In-rich group III-nitride alloys Journal of Physics D. 39. DOI: 10.1088/0022-3727/39/5/R01  0.668
2006 Yu KM, Walukiewicz W, Ager JW, Bour D, Farshchi R, Dubon OD, Li SX, Sharp ID, Haller EE. Multiband GaNAsP quaternary alloys Applied Physics Letters. 88. DOI: 10.1063/1.2181627  0.672
2006 Jones RE, Li SX, Hsu L, Yu KM, Walukiewicz W, Liliental-Weber Z, Ager JW, Haller EE, Lu H, Schaff WJ. Native-defect-controlled n-type conductivity in InN Physica B-Condensed Matter. 376: 436-439. DOI: 10.1016/J.Physb.2005.12.112  0.543
2006 Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Native defects in InxGa1−xN alloys Physica B-Condensed Matter. 376: 432-435. DOI: 10.1016/J.Physb.2005.12.111  0.676
2006 Walukiewicz W, Jones R, Li S, Yu K, Ager J, Haller E, Lu H, Schaff W. Dopants and defects in InN and InGaN alloys Journal of Crystal Growth. 288: 278-282. DOI: 10.1016/J.Jcrysgro.2005.12.082  0.629
2005 Jones RE, van Genuchten HCM, Li SX, Hsu L, Yu KM, Walukiewicz W, Ager III JW, Haller EE, Lu H, Schaff WJ. Electron Transport Properties of InN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff06-06  0.543
2005 Ager JW, Walukiewicz W, Shan W, Yu KM, Li SX, Haller EE, Lu H, Schaff WJ. Multiphonon resonance Raman scattering inInxGa1−xN Physical Review B. 72. DOI: 10.1103/Physrevb.72.155204  0.444
2005 Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Fermi-level stabilization energy in group III nitrides Physical Review B. 71. DOI: 10.1103/Physrevb.71.161201  0.653
2005 Li SX, Haller EE, Yu KM, Walukiewicz W, Ager JW, Wu J, Shan W, Lu H, Schaff WJ. Effect of native defects on optical properties of InxGa1−xN alloys Applied Physics Letters. 87: 161905. DOI: 10.1063/1.2108118  0.676
2005 Yu KM, Liliental-Weber Z, Walukiewicz W, Shan W, Ager JW, Li SX, Jones RE, Haller EE, Lu H, Schaff WJ. On the crystalline structure, stoichiometry and band gap of InN thin films Applied Physics Letters. 86: 71910. DOI: 10.1063/1.1861513  0.512
2004 Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853  0.664
2004 Walukiewicz W, Li S, Wu J, Yu K, Ager J, Haller E, Lu H, Schaff WJ. Optical properties and electronic structure of InN and In-rich group III-nitride alloys Journal of Crystal Growth. 269: 119-127. DOI: 10.1016/J.Jcrysgro.2004.05.041  0.697
2004 Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys Physica Status Solidi (B). 241: 3107-3112. DOI: 10.1002/Pssb.200405232  0.67
2003 Li SX, Wu J, Haller EE, Walukiewicz W, Shan W, Lu H, Schaff WJ. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys Applied Physics Letters. 83: 4963-4965. DOI: 10.1063/1.1633681  0.611
2003 Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Li SX, Haller EE, Lu H, Schaff WJ. Temperature dependence of the fundamental band gap of InN Journal of Applied Physics. 94: 4457-4460. DOI: 10.1063/1.1605815  0.662
2003 Wu J, Walukiewicz W, Yu K, Ager J, Li S, Haller E, Lu H, Schaff WJ. Universal bandgap bowing in group-III nitride alloys Solid State Communications. 127: 411-414. DOI: 10.1016/S0038-1098(03)00457-5  0.661
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