Jun Ni, Ph.D. - Publications

Affiliations: 
2005 Northwestern University, Evanston, IL 
Area:
Catalyic Chemistry

19 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Wang Z, Peng L, Lin Z, Ni J, Yi P, Lai X, He X, Lei Z. Flexible Semiconductor Technologies with Nanoholes-Provided High Areal Coverages and Their Application in Plasmonic-Enhanced Thin Film Photovoltaics. Scientific Reports. 7: 13155. PMID 29030604 DOI: 10.1038/s41598-017-13655-y  0.326
2015 Ni J, Zhao X, Zhao Q, Zheng M. Improved visible transparency of SIO2/ZNO:AL /CEO2-TIO2/SIO2 multilayer films with high UV absorption and infrared reflection rate Journal Wuhan University of Technology, Materials Science Edition. 30: 941-946. DOI: 10.1007/s11595-015-1254-y  0.35
2008 Jin S, Yang Y, Medvedeva JE, Wang L, Li S, Cortes N, Ireland JR, Metz AW, Ni J, Hersam MC, Freeman AJ, Marks TJ. Tuning the properties of transparent oxide conductors. Dopant ion size and electronic structure effects on CdO-based transparent conducting oxides. Ga- and in-doped CdO thin films grown by MOCVD Chemistry of Materials. 20: 220-230. DOI: 10.1021/Cm702588M  0.824
2008 Wu Y, Zhang L, Xie G, Ni J, Chen Y. Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates Solid State Communications. 148: 247-250. DOI: 10.1016/j.ssc.2008.08.009  0.454
2005 Ni J, Wang L, Yang Y, Yan H, Jin S, Marks TJ, Ireland JR, Kannewurf CR. Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films. Inorganic Chemistry. 44: 6071-6. PMID 16097827 DOI: 10.1021/Ic0501364  0.802
2005 Yang Y, Jin S, Medvedeva JE, Ireland JR, Metz AW, Ni J, Hersam MC, Freeman AJ, Marks TJ. CdO as the archetypical transparent conducting oxide. Systematics of dopant ionic radius and electronic structure effects on charge transport and band structure. Journal of the American Chemical Society. 127: 8796-804. PMID 15954786 DOI: 10.1021/Ja051272A  0.81
2005 Ni J, Yan H, Wang A, Yang Y, Stern CL, Metz AW, Jin S, Wang L, Marks TJ, Ireland JR, Kannewurf CR. MOCVD-derived highly transparent, conductive zinc- and tin-doped indium oxide thin films: precursor synthesis, metastable phase film growth and characterization, and application as anodes in polymer light-emitting diodes. Journal of the American Chemical Society. 127: 5613-24. PMID 15826201 DOI: 10.1021/Ja044643G  0.826
2005 Yang Y, Huang Q, Metz AW, Jin S, Ni J, Wang L, Marks TJ. Highly transparent and conductive CdO thin films as anodes for organic light-emitting diodes: Film microstructure and morphology effects on performance Journal of the Society For Information Display. 13: 383-387. DOI: 10.1889/1.1927728  0.813
2005 Yang Y, Huang Q, Metz AW, Jin S, Ni J, Wang L, Marks TJ. Highly Transparent and Conductive CdO Thin Films as Anodes for Organic Light-Emitting Diodes Mrs Proceedings. 871. DOI: 10.1557/Proc-871-I9.14  0.809
2005 Dhote AM, Meier AL, Towner DJ, Wessels BW, Ni J, Marks TJ. Low temperature deposition of epitaxial BaTi O3 films in a rotating disk vertical MOCVD reactor Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1674-1678. DOI: 10.1116/1.1993621  0.573
2005 Wang L, Yang Y, Ni J, Stern CL, Marks TJ. Synthesis and Characterization of Low-Melting, Highly Volatile Magnesium MOCVD Precursors and Their Implementation in MgO Thin Film Growth Chemistry of Materials. 17: 5697-5704. DOI: 10.1021/Cm0512528  0.694
2004 Jin S, Yang Y, Medvedeva JE, Ireland JR, Metz AW, Ni J, Kannewurf CR, Freeman AJ, Marks TJ. Dopant ion size and electronic structure effects on transparent conducting oxides. Sc-doped CdO thin films grown by MOCVD. Journal of the American Chemical Society. 126: 13787-93. PMID 15493938 DOI: 10.1021/Ja0467925  0.816
2004 Metz AW, Ireland JR, Zheng JG, Lobo RP, Yang Y, Ni J, Stern CL, Dravid VP, Bontemps N, Kannewurf CR, Poeppelmeier KR, Marks TJ. Transparent conducting oxides: texture and microstructure effects on charge carrier mobility in MOCVD-derived CdO thin films grown with a thermally stable, low-melting precursor. Journal of the American Chemical Society. 126: 8477-92. PMID 15238005 DOI: 10.1021/Ja039232Z  0.801
2004 Yang Y, Huang Q, Metz AW, Ni J, Jin S, Marks TJ, Madsen ME, DiVenere A, Ho ST. High‐Performance Organic Light‐Emitting Diodes Using ITO Anodes Grown on Plastic by Room‐ Temperature Ion‐Assisted Deposition Advanced Materials. 16: 321-324. DOI: 10.1002/Adma.200305727  0.777
2003 Towner DJ, Ni J, Marks TJ, Wessels BW. Effects of two-stage deposition on the structure and properties of heteroepitaxial BaTiO3 thin films Journal of Crystal Growth. 255: 107-113. DOI: 10.1016/S0022-0248(03)01195-3  0.615
2002 Edleman NL, Wang A, Belot JA, Metz AW, Babcock JR, Kawaoka AM, Ni J, Metz MV, Flaschenriem CJ, Stern CL, Liable-Sands LM, Rheingold AL, Markworth PR, Chang RP, Chudzik MP, et al. Synthesis and characterization of volatile, fluorine-free beta-ketoiminate lanthanide MOCVD precursors and their implementation in low-temperature growth of epitaxial CeO(2) buffer layers for superconducting electronics. Inorganic Chemistry. 41: 5005-23. PMID 12354033 DOI: 10.1021/Ic020299H  0.695
2002 Metz AW, Ireland JR, Ni J, Poeppelmeier KR, Kannewurf CR, Marks TJ. New Low-melting Cadmium Precursors for the Detailed Study of Texture Effects in MOCVD Derived CdO Thin-Films Mrs Proceedings. 721. DOI: 10.1557/Proc-721-J6.4  0.803
2002 Marks TJ, Veinot JGC, Cui J, Yan H, Wang A, Edleman NL, Ni J, Huang Q, Lee P, Armstrong NR. Progress in high work function TCO OLED anode alternatives and OLED nanopixelation Synthetic Metals. 127: 29-35. DOI: 10.1016/S0379-6779(01)00593-8  0.745
2001 Cui J, Wang A, Edleman NL, Ni J, Lee P, Armstrong NR, Marks TJ. Indium tin oxide alternatives - High work function transparent conducting oxides as anodes for organic light-emitting diodes Advanced Materials. 13: 1476-1480. DOI: 10.1002/1521-4095(200110)13:19<1476::Aid-Adma1476>3.0.Co;2-Y  0.76
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