Year |
Citation |
Score |
2019 |
Datta A, Becla P, Motakef S. Novel Electrodes and Engineered Interfaces for Halide-Semiconductor Radiation Detectors. Scientific Reports. 9: 9933. PMID 31289322 DOI: 10.1038/S41598-019-46360-Z |
0.33 |
|
2018 |
Datta A, Becla P, Motakef S. Thallium Bromide Semiconductor Radiation Detectors With Thallium Contacts Ieee Transactions On Nuclear Science. 65: 2329-2332. DOI: 10.1109/Tns.2018.2856467 |
0.323 |
|
2018 |
Datta A, Becla P, Guguschev C, Motakef S. Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors Journal of Crystal Growth. 483: 211-215. DOI: 10.1016/J.Jcrysgro.2017.12.008 |
0.552 |
|
2017 |
Datta A, Fiala J, Becla P, Motakef S. Stable room-temperature thallium bromide semiconductor radiation detectors Apl Materials. 5: 106109. DOI: 10.1063/1.5001181 |
0.307 |
|
2016 |
Datta A, Moed D, Becla P, Overholt M, Motakef S. Advances in crystal growth, device fabrication and characterization of thallium bromide detectors for room temperature applications Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.01.009 |
0.483 |
|
2015 |
Datta A, Becla P, Moed D, Motakef S. Performance limiting processes in room temperature thallium bromide radiation detectors Proceedings of Spie. 9593. DOI: 10.1117/12.2186861 |
0.316 |
|
2015 |
Lam S, Swider SE, Datta A, Motakef S. The Influence of Cation Impurities on the Scintillation Performance of SrI2 (Eu) Ieee Transactions On Nuclear Science. 62: 3397-3404. DOI: 10.1109/Tns.2015.2496800 |
0.441 |
|
2015 |
Datta A, Motakef S. Cathode Degradation in Thallium Bromide Devices Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2427779 |
0.307 |
|
2015 |
Datta A, Motakef S. Characterization of stress in thallium bromide devices Ieee Transactions On Nuclear Science. 62: 437-442. DOI: 10.1109/Tns.2015.2400396 |
0.374 |
|
2015 |
Datta A, Becla P, Motakef S. Visualization of TlBr ionic transport mechanism by the Accelerated Device Degradation technique Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. DOI: 10.1016/J.Nima.2015.01.021 |
0.415 |
|
2015 |
Lam S, Swider S, Fiala J, Datta A, Motakef S. Microscale luminescence imaging of defects, inhomogeneities, and secondary phases in halide scintillators Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. DOI: 10.1016/J.Nima.2014.12.038 |
0.432 |
|
2014 |
Swain SK, Cui Y, Datta A, Bhaladhare S, Rohan Rao M, Burger A, Lynn KG. Bulk growth of uniform and near stoichiometric cadmium telluride Journal of Crystal Growth. 389: 134-138. DOI: 10.1016/J.Jcrysgro.2013.12.004 |
0.645 |
|
2013 |
Swider S, Motakef S, Datta A, Higgins WM. Residual gas analysis of volatile impurities in halide precursors for scintillator crystals Proceedings of Spie. 8852. DOI: 10.1117/12.2034232 |
0.328 |
|
2013 |
Datta A, Swain S, Cui Y, Burger A, Lynn K. Correlations of bridgman-grown Cd0.9Zn0.1Te properties with different ampoule rotation schemes Journal of Electronic Materials. 42: 3041-3053. DOI: 10.1007/S11664-013-2782-X |
0.726 |
|
2012 |
Datta A, Swain S, Cui Y, Burger A, Lynn K. Preliminary results on Bridgman grown CdZnTe detector crystals assisted by ampoule rotation Proceedings of Spie - the International Society For Optical Engineering. 8507. DOI: 10.1117/12.930437 |
0.751 |
|
2011 |
Bhaladhare S, Munge WG, Swain S, Datta A, Havrilak CJ, Soundararajan R, Jones K, Duff MC, Lynn KG. Correlations of secondary phases (SPs) with mobility lifetime (μτe) of the electrons in CZT crystals using IR microscopy Proceedings of Spie - the International Society For Optical Engineering. 8142. DOI: 10.1117/12.894643 |
0.639 |
|
2011 |
Swain SK, Jones KA, Datta A, Lynn KG. Study of different cool down schemes during the crystal growth of detector grade cdznte Ieee Transactions On Nuclear Science. 58: 2341-2345. DOI: 10.1109/Tns.2011.2162077 |
0.75 |
|
2010 |
Jones KA, Datta A, Lynn KG, Franks LA. Variations in μτ measurements in cadmium zinc telluride Journal of Applied Physics. 107. DOI: 10.1063/1.3428475 |
0.465 |
|
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