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James Sturm - Publications

Affiliations: 
Electrical Engineering Princeton University, Princeton, NJ 
Area:
Biological & Biomedical,Energy & Environment,Materials & Devices,Nanotechnologies
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86 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Visweswaran B, Mandlik P, Mohan SH, Silvernail JA, Ma R, Sturm JC, Wagner S. Diffusion of water into permeation barrier layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4918327  0.773
2014 Jhaveri J, Avasthi S, Nagamatsu K, Sturm JC. Stable low-recombination n-Si/TiO2 hole-blocking interface and its effect on silicon heterojunction photovoltaics 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1525-1528. DOI: 10.1109/PVSC.2014.6925206  0.666
2014 Avasthi S, Nagamatsu KA, Jhaveri J, McClain WE, Man G, Kahn A, Schwartz J, Wagner S, Sturm JC. Double-heterojunction crystalline silicon solar cell fabricated at 250°C with 12.9 % efficiency 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 949-952. DOI: 10.1109/PVSC.2014.6925069  0.672
2014 Nagamatsu KA, Avasthi S, Jhaveri J, Sturm JC. A 12% efficient silicon/PEDOT:PSS heterojunction solar cell fabricated at < 100 °c Ieee Journal of Photovoltaics. 4: 260-264. DOI: 10.1109/Jphotov.2013.2287758  0.694
2014 Visweswaran B, Mohan SH, Mandlik P, Silvernail J, Ma R, Sturm J, Wagner S. Predicting the lifetime of flexible permeation barrier layers for OLED displays Digest of Technical Papers - Sid International Symposium. 45: 111-113. DOI: 10.1002/j.2168-0159.2014.tb00031.x  0.761
2013 Wu A, Loutherback K, Lambert G, Estévez-Salmerón L, Tlsty TD, Austin RH, Sturm JC. Cell motility and drug gradients in the emergence of resistance to chemotherapy. Proceedings of the National Academy of Sciences of the United States of America. 110: 16103-8. PMID 24046372 DOI: 10.1073/Pnas.1314385110  0.722
2013 Sturm JC, Avasthi S, Nagamatsu K, Jhaveri J, McClain W, Man G, Kahn A, Schwartz J, Wagner S. Wide bandgap heterojunctions on crystalline silicon Ecs Transactions. 58: 97-105. DOI: 10.1149/05809.0097ecst  0.689
2013 Sturm J, Jafferis N. Toward a flexible electronic flying carpet Spie Newsroom. DOI: 10.1117/2.1201305.004838  0.717
2013 Li JY, Sturm JC. The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases Ieee Transactions On Electron Devices. 60: 2479-2484. DOI: 10.1109/Ted.2013.2267172  0.326
2013 Jhaveri J, Avasthi S, Man G, McClain WE, Nagamatsu K, Kahn A, Schwartz J, Sturm JC. Hole-blocking crystalline-silicon/titanium-oxide heterojunction with very low interface recombination velocity Conference Record of the Ieee Photovoltaic Specialists Conference. 3292-3296. DOI: 10.1109/PVSC.2013.6745154  0.655
2013 Huang CT, Li JY, Sturm JC. Implant isolation of silicon two-dimensional electron gases at 4.2 K Ieee Electron Device Letters. 34: 21-23. DOI: 10.1109/Led.2012.2228160  0.335
2013 Jafferis NT, Sturm JC. Fundamental and experimental conditions for the realization of traveling-wave-induced aerodynamic propulsive forces by piezoelectrically deformed plastic substrates Journal of Microelectromechanical Systems. 22: 495-505. DOI: 10.1109/Jmems.2012.2228164  0.719
2013 Jhaveri J, Avasthi S, Nagamatsu KA, Sturm JC. Wide bandgap HBT on crystalline silicon using electron-blocking PEDOT:PSS emitter Device Research Conference - Conference Digest, Drc. 77-78. DOI: 10.1109/DRC.2013.6633801  0.659
2013 Li JY, Huang CT, Rokhinson LP, Sturm JC. Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition Applied Physics Letters. 103. DOI: 10.1063/1.4824729  0.398
2013 Avasthi S, McClain WE, Man G, Kahn A, Schwartz J, Sturm JC. Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics Applied Physics Letters. 102. DOI: 10.1063/1.4803446  0.696
2012 Loutherback K, D'Silva J, Liu L, Wu A, Austin RH, Sturm JC. Deterministic separation of cancer cells from blood at 10 mL/min. Aip Advances. 2: 42107. PMID 23112922 DOI: 10.1063/1.4758131  0.746
2012 Avasthi S, McClain W, Schwartz J, Sturm JC. Hole-blocking TiO 2/silicon heterojunction for silicon photovoltaics Device Research Conference - Conference Digest, Drc. 93-94. DOI: 10.1109/DRC.2012.6256955  0.676
2012 Jafferis NT, Sturm JC. Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions Journal of Applied Physics. 111. DOI: 10.1063/1.3697980  0.763
2011 Avasthi S, Lee S, Loo YL, Sturm JC. Role of majority and minority carrier barriers silicon/organic hybrid heterojunction solar cells. Advanced Materials (Deerfield Beach, Fla.). 23: 5762-6. PMID 22109841 DOI: 10.1002/Adma.201102712  0.673
2011 Sturm JC, Huang Y, Han L, Liu T, Hekmatshoar B, Cherenack K, Lausecker E, Wagner S. Amorphous silicon: The other silicon 2011 12th International Conference On Ultimate Integration On Silicon, Ulis 2011. 34-37. DOI: 10.1109/ULIS.2011.5758011  0.666
2011 Huang Y, Wagner S, Sturm JC. Nonvolatile amorphous-silicon thin-film-transistor memory structure for drain-voltage independent saturation current Ieee Transactions On Electron Devices. 58: 2924-2927. DOI: 10.1109/Ted.2011.2159609  0.482
2011 Avasthi S, Sturm JC. Charge separation and minority carrier injection in P3HT-silicon heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 002487-002489. DOI: 10.1109/PVSC.2011.6186450  0.641
2011 Han L, Huang Y, Sturm JC, Wagner S. Self-aligned top-gate coplanar a-Si:H thin-film transistors with a SiO 2silicone hybrid gate dielectric Ieee Electron Device Letters. 32: 36-38. DOI: 10.1109/Led.2010.2084558  0.518
2011 Jafferis NT, Stone HA, Sturm JC. Traveling wave-induced aerodynamic propulsive forces using piezoelectrically deformed substrates Applied Physics Letters. 99. DOI: 10.1063/1.3637635  0.715
2011 Avasthi S, Qi Y, Vertelov GK, Schwartz J, Kahn A, Sturm JC. Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces Surface Science. 605: 1308-1312. DOI: 10.1016/J.Susc.2011.04.024  0.651
2010 Liu L, Loutherback K, Liao D, Yeater D, Lambert G, Estévez-Torres A, Sturm JC, Getzenberg RH, Austin RH. A microfluidic device for continuous cancer cell culture and passage with hydrodynamic forces. Lab On a Chip. 10: 1807-13. PMID 20424729 DOI: 10.1039/C003509B  0.737
2010 Jin H, Sturm JC. Super-high-resolution transfer printing for full-color OLED display patterning Journal of the Society For Information Display. 18: 141-145. DOI: 10.1889/Jsid18.2.141  0.482
2010 Huang Y, Hekmatshoar B, Wagner S, Sturm JC. Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory Journal of the Society For Information Display. 18: 879-883. DOI: 10.1889/Jsid18.11.879  0.661
2010 Huang Y, Hekmatshoar B, Wagner S, Sturm JC. High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh Ecs Transactions. 33: 365-373. DOI: 10.1149/1.3481259  0.669
2010 Cherenack KH, Hekmatshoar B, Sturm JC, Wagner S. Self-aligned amorphous silicon thin-film transistors fabricated on clear plastic at 300°C Ieee Transactions On Electron Devices. 57: 2381-2389. DOI: 10.1109/Ted.2010.2056132  0.662
2010 Lausecker E, Huang Y, Fromherz T, Sturm JC, Wagner S. Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication Applied Physics Letters. 96. DOI: 10.1063/1.3457446  0.51
2010 Avasthi S, Qi Y, Vertelov GK, Schwartz J, Kahn A, Sturm JC. Silicon surface passivation by an organic overlayer of 9,10- phenanthrenequinone Applied Physics Letters. 96. DOI: 10.1063/1.3429585  0.681
2010 Loutherback K, Chou KS, Newman J, Puchalla J, Austin RH, Sturm JC. Improved performance of deterministic lateral displacement arrays with triangular posts Microfluidics and Nanofluidics. 9: 1143-1149. DOI: 10.1007/S10404-010-0635-Y  0.748
2010 Wagner S, Han L, Hekmatshoar B, Song K, Mandlik P, Cherenack KH, Sturm JC. 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920.  0.635
2010 Wagner S, Han L, Hekmatshoar B, Song K, Mandlik P, Cherenack KH, Sturm JC. 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920.  0.653
2009 Loutherback K, Puchalla J, Austin RH, Sturm JC. Deterministic microfluidic ratchet. Physical Review Letters. 102: 045301. PMID 19257437 DOI: 10.1103/Physrevlett.102.045301  0.744
2009 Avasthi S, Vertelov G, Schwartz J, Sturm JC. Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions Conference Record of the Ieee Photovoltaic Specialists Conference. 001681-001685. DOI: 10.1109/PVSC.2009.5411419  0.641
2009 Hekmatshoar B, Wagner S, Sturm JC. Optimum low-gate-field and high-gate-field stability of amorphous silicon thin-film transistors with a single plastic-compatible gate nitride deposition process Device Research Conference - Conference Digest, Drc. 189-190. DOI: 10.1109/DRC.2009.5354944  0.65
2009 Huang Y, Hekmatshoar B, Wagner S, Sturm JC. Amorphous silicon floating-gate thin film transistor Device Research Conference - Conference Digest, Drc. 135-136. DOI: 10.1109/DRC.2009.5354877  0.667
2009 Hekmatshoar B, Wagner S, Sturm JC. Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework Applied Physics Letters. 95. DOI: 10.1063/1.3238559  0.659
2009 Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Amorphous silicon thin-film transistors made on clear plastic at 300°C Journal of the Korean Physical Society. 54: 415-420.  0.664
2008 Morton KJ, Loutherback K, Inglis DW, Tsui OK, Sturm JC, Chou SY, Austin RH. Crossing microfluidic streamlines to lyse, label and wash cells. Lab On a Chip. 8: 1448-53. PMID 18818798 DOI: 10.1039/B805614E  0.747
2008 Morton KJ, Loutherback K, Inglis DW, Tsui OK, Sturm JC, Chou SY, Austin RH. Hydrodynamic metamaterials: microfabricated arrays to steer, refract, and focus streams of biomaterials. Proceedings of the National Academy of Sciences of the United States of America. 105: 7434-8. PMID 18495920 DOI: 10.1073/Pnas.0712398105  0.736
2008 Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Self-aligned amorphous silicon thin film transistors with mobility above 1 cm 2V -1s -1 fabricated at 300° C on clear plastic substrates Materials Research Society Symposium Proceedings. 1066: 471-476. DOI: 10.1557/Proc-1066-A20-03  0.656
2008 Hekmatshoar B, Cherenack KH, Wagner S, Sturm JC. Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796621  0.635
2008 Hekmatshoar B, Cherenack K, Long K, Kattamis A, Wagner S, Sturm JC. Amoled reliability with a-si tft's in normal vs. inverted TFT/OLED integration scheme Device Research Conference - Conference Digest, Drc. 243-244. DOI: 10.1109/DRC.2008.4800822  0.619
2008 Huang Y, Hekmatshoar B, Wagner S, Sturm JC. Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain Device Research Conference - Conference Digest, Drc. 241-242. DOI: 10.1109/DRC.2008.4800821  0.654
2008 Morton KJ, Loutherback K, Inglis DW, Sturm JC, Austin RH, Chou SY. Crossing streamlines to lyse cells and simultaneously separate genomic contents 12th International Conference On Miniaturized Systems For Chemistry and Life Sciences - the Proceedings of Microtas 2008 Conference. 1965-1967.  0.722
2007 Sturm J, Fitzgerald E, Koester S, Kolodzey J, Muroto J, Paul D, Tillack B, Zaima S, Ghyselen B, Takagi S. Papers from the 3rd international SiGe technology and device meeting (Princeton, New Jersey, USA, 15-17 May 2006) (ISTDM 2006) Semiconductor Science and Technology. 22. DOI: 10.1088/0268-1242/22/1/E01  0.362
2006 Davis JA, Inglis DW, Morton KJ, Lawrence DA, Huang LR, Chou SY, Sturm JC, Austin RH. Deterministic hydrodynamics: taking blood apart. Proceedings of the National Academy of Sciences of the United States of America. 103: 14779-84. PMID 17001005 DOI: 10.1073/Pnas.0605967103  0.608
2006 Yao K, Sturm JC. Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer Mrs Proceedings. 921. DOI: 10.1557/Proc-0921-T02-08  0.468
2006 Peterson RL, Hobart KD, Yin H, Kub FJ, Sturm JC. Publisher's Note: “Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates” [J. Appl. Phys. 100, 023537 (2006)] Journal of Applied Physics. 100: 129901. DOI: 10.1063/1.2403772  0.518
2006 Bo XZ, Rokhinson LP, Yao N, Tsui DC, Sturm JC. SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth Journal of Applied Physics. 100. DOI: 10.1063/1.2358398  0.446
2006 Peterson RL, Hobart KD, Yin H, Kub FJ, Sturm JC. Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates Journal of Applied Physics. 100. DOI: 10.1063/1.2210810  0.529
2006 Peterson RL, Hobart KD, Kub FJ, Sturm JC. Comment on "fabrication of strained silicon on insulator by strain transfer process" [Appl. Phys. Lett. 87, 051921 (2005)] Applied Physics Letters. 88. DOI: 10.1063/1.2192641  0.534
2005 Yin H, Peterson RL, Hobart KD, Shieh SR, Duffy TS, Sturm JC. Tunable uniaxial vs biaxial in-plane strain using compliant substrates Applied Physics Letters. 87. DOI: 10.1063/1.2006215  0.548
2004 Huang LR, Cox EC, Austin RH, Sturm JC. Continuous particle separation through deterministic lateral displacement. Science (New York, N.Y.). 304: 987-90. PMID 15143275 DOI: 10.1126/Science.1094567  0.632
2004 Stewart EJ, Carroll MS, Sturm JC. Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys Journal of Applied Physics. 95: 4029-4035. DOI: 10.1063/1.1649452  0.7
2004 Hsu PI, Huang M, Xi Z, Wagner S, Suo Z, Sturm JC. Spherical deformation of compliant substrates with semiconductor device islands Journal of Applied Physics. 95: 705-712. DOI: 10.1063/1.1634370  0.499
2004 Gleskova H, Hsu PI, Xi Z, Sturm JC, Suo Z, Wagner S. Field-effect mobility of amorphous silicon thin-film transistors under strain Journal of Non-Crystalline Solids. 338: 732-735. DOI: 10.1016/J.Jnoncrysol.2004.03.079  0.514
2003 Huang LR, Cox EC, Austin RH, Sturm JC. Tilted brownian ratchet for DNA analysis. Analytical Chemistry. 75: 6963-7. PMID 14670059 DOI: 10.1021/Ac0348524  0.633
2003 Yin H, Peterson R, Hobart K, Shieh S, Duffy T, Sturm J. Relaxed SiGe Layers with High Ge Content by Compliant Substrates Mrs Proceedings. 768. DOI: 10.1557/Proc-768-G1.7/D4.7  0.596
2003 Yin H, Huang R, Hobart KD, Liang J, Suo Z, Shieh SR, Duffy TS, Kub FJ, Sturm JC. Buckling suppression of SiGe islands on compliant substrates Journal of Applied Physics. 94: 6875-6882. DOI: 10.1063/1.1621069  0.334
2002 Huang LR, Silberzan P, Tegenfeldt JO, Cox EC, Sturm JC, Austin RH, Craighead H. Role of molecular size in ratchet fractionation. Physical Review Letters. 89: 178301. PMID 12398707 DOI: 10.1103/Physrevlett.89.178301  0.631
2002 Huang LR, Tegenfeldt JO, Kraeft JJ, Sturm JC, Austin RH, Cox EC. A DNA prism for high-speed continuous fractionation of large DNA molecules. Nature Biotechnology. 20: 1048-51. PMID 12219075 DOI: 10.1038/Nbt733  0.617
2002 Bo X, Rokhinson LP, Sturm JC. Silicon Epitaxial Regrowth Passivation of SiGe Nanostructures Pattered by AFM Oxidation Mrs Proceedings. 737. DOI: 10.1557/PROC-737-E14.5  0.321
2002 Bo X, Yao N, Wagner S, Sturm JC. Spatially selective single-grain silicon films induced by hydrogen plasma seeding Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 818. DOI: 10.1116/1.1469016  0.502
2002 Hsu PI, Bhattacharya R, Gleskova H, Huang M, Xi Z, Suo Z, Wagner S, Sturm JC. Thin-film transistor circuits on large-area spherical surfaces Applied Physics Letters. 81: 1723-1725. DOI: 10.1063/1.1502199  0.541
2002 Carroll MS, Sturm JC. Quantification of substitutional carbon loss from Si0.998C 0.002 due to silicon self-interstitial injection during oxidation Applied Physics Letters. 81: 1225-1227. DOI: 10.1063/1.1500411  0.585
2002 Hsu PI, Gleskova H, Huang M, Suo Z, Wagner S, Sturm JC. Amorphous Si TFTs on plastically deformed spherical domes Journal of Non-Crystalline Solids. 299: 1355-1359. DOI: 10.1016/S0022-3093(01)01156-5  0.568
2001 Vlasov YA, Bo XZ, Sturm JC, Norris DJ. On-chip natural assembly of silicon photonic bandgap crystals. Nature. 414: 289-93. PMID 11713524 DOI: 10.1038/35104529  0.455
2001 Long K, Pschenitzka F, Sturm JC. Three-Color Passive-Matrix Pixels Using Dye-Diffusion-Patterned Tri-Layer Polymer-Based LED Mrs Proceedings. 708. DOI: 10.1557/Proc-708-Bb6.8  0.666
2001 Bo X, Rokhinson LP, Yin H, Tsui DC, Sturm JC. Si/SiGe Nanostructures Fabricated by Atomic Force Microscopy Oxidation Mrs Proceedings. 686. DOI: 10.1557/Proc-686-A6.5  0.462
2001 Carroll MS, Sturm JC, Napolitani E, Salvador DD, Berti M, Stangl J, Bauer G, Tweet DJ. Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures Mrs Proceedings. 669. DOI: 10.1557/PROC-669-J6.7  0.55
2001 Pschenitzka F, Long K, Sturm JC. Solvent-enhanced Dye Diffusion in Polymer This-Films for OLED Application Mrs Proceedings. 665. DOI: 10.1557/Proc-665-C9.5  0.655
2001 Carroll MS, Sturm JC, Büyüklimanli T. Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation Physical Review B. 64. DOI: 10.1103/PhysRevB.64.085316  0.564
2001 Carroll MS, Sturm JC, Napolitani E, De Salvador D, Berti M, Stangl J, Bauer G, Tweet DJ. Diffusion enhanced carbon loss from SiGeC layers due to oxidation Physical Review B. 64. DOI: 10.1103/PhysRevB.64.073308  0.505
2000 Carroll MS, Sturm JC, Yang M. Low-temperature preparation of oxygen- and carbon-free silicon and silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition Journal of the Electrochemical Society. 147: 4652-4659. DOI: 10.1149/1.1394118  0.592
2000 Yang M, Carroll M, Sturm JC, Büyüklimanli T. Phosphorus doping and sharp profiles in silicon and silicon-germanium epitaxy by rapid thermal chemical vapor deposition Journal of the Electrochemical Society. 147: 3541-3545. DOI: 10.1149/1.1393934  0.597
2000 Madhavi S, Venkataraman, Sturm J, Xie Y. Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells Physical Review B. 61: 16807-16818. DOI: 10.1103/Physrevb.61.16807  0.315
1999 Pangal K, Chen Y, Sturm J, Wagner S. Integrated Amorphous and Polycrystalline Silicon TFTs with a Single Silicon Layer Mrs Proceedings. 557. DOI: 10.1557/Proc-557-629  0.31
1998 Carroll MS, Lanzerotti LD, Sturm JC. Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation Mrs Proceedings. 527. DOI: 10.1557/PROC-527-417  0.54
1998 Sturm JC, Yang M, Chang CL, Carroll MS. Novel Applications of Rapid Thermal Chemical Vapor Deposition for Nanoscale MOSFET’s Mrs Proceedings. 525. DOI: 10.1557/PROC-525-273  0.572
1998 Carroll MS, Chang CL, Sturm JC, Büyüklimanli T. Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation Applied Physics Letters. 73: 3695-3697. DOI: 10.1063/1.122866  0.549
1982 Stultz T, Sturm J, Gibbons J. Beam Processing of Silicon With a Scanning CW Hg Lamp Mrs Proceedings. 13. DOI: 10.1557/Proc-13-463  0.403
1982 Stultz TJ, Sturm J, Gibbons JF, Ichiki SK. Rapid annealing of silicon with a scanning cw Hg lamp Journal of Applied Physics. 53: 7109-7111. DOI: 10.1063/1.330022  0.314
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