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Chung-Han Lin, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering Ohio State University, Columbus, Columbus, OH 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Nanotechnology
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Katz EJ, Lin CH, Qiu J, Zhang Z, Mishra UK, Cao L, Brillson LJ. Neutron irradiation effects on metal-gallium nitride contacts Journal of Applied Physics. 115. DOI: 10.1063/1.4869552  0.55
2013 Qiu J, Katz E, Lin CH, Cao L, Brillson LJ. The effect of thermal reactor neutron irradiation on semi-insulating GaN Radiation Effects and Defects in Solids. 168: 924-932. DOI: 10.1080/10420150.2013.792819  0.554
2013 Lin CH, Katz EJ, Qiu J, Zhang Z, Mishra UK, Cao L, Brillson LJ. Neutron irradiation effects on gallium nitride-based Schottky diodes Applied Physics Letters. 103. DOI: 10.1063/1.4826091  0.569
2012 Lin CH, Merz TA, Doutt DR, Joh J, Del Alamo JA, Mishra UK, Brillson LJ. Strain and temperature dependence of defect formation at AlGaN/GaN high-electron-mobility transistors on a nanometer scale Ieee Transactions On Electron Devices. 59: 2667-2674. DOI: 10.1109/Ted.2012.2206595  0.688
2010 Lin CH, Doutt DR, Mishra UK, Merz TA, Brillson LJ. Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale Applied Physics Letters. 97. DOI: 10.1063/1.3521392  0.672
2009 Lin CH, Merz TA, Doutt DR, Hetzer MJ, Joh J, Del Alamo JA, Mishra UK, Brillson LJ. Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors Applied Physics Letters. 95. DOI: 10.1063/1.3189102  0.68
2006 Nee T, Wang J, Shen H, Lin C, Wu Y. Observations of electrical and luminescence anomalies in InGaN∕GaN blue light-emitting diodes Journal of Vacuum Science and Technology. 24: 1016-1019. DOI: 10.1116/1.2207152  0.357
2005 Nee T, Wang J, Lin C, Lin R, Huang C, Fang B, Wang R. Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers Journal of Vacuum Science & Technology B. 23: 966-969. DOI: 10.1116/1.1924611  0.337
2005 Lin R, Lin C, Wang J, Nee T, Fang B, Wang R. Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure Journal of Crystal Growth. 278: 421-425. DOI: 10.1016/J.Jcrysgro.2005.01.012  0.342
2004 Wang J, Lin C, Lin R, Nee T, Fang B, Wang R. Characterization of the carrier confinement for InGaN/GaN light emitting diode with multiquantum barriers Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E3.27  0.326
2003 Nee T, Chien K, Chou Y, Chou L, Lin C, Lin R, Fang B, Chang S. Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes Journal of Vacuum Science & Technology B. 21: 1157-1160. DOI: 10.1116/1.1577572  0.313
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