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Xiangdong Chen, Ph.D. - Publications

Affiliations: 
2001 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2001 Jayanarayanan S, Prins F, Chen X, Banerjee S. Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD Mrs Proceedings. 686: 75-79. DOI: 10.1557/Proc-686-A2.8  0.752
2001 Kim DW, Kim YH, Chen X, Lee CH, Song SC, Prins FE, Kwong DL, Banerjee SK. Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition Journal of Vacuum Science & Technology B. 19: 1104-1108. DOI: 10.1116/1.1387453  0.497
2001 Chen X, Liu KC, Ouyang QC, Jayanarayanan SK, Banerjee SK. Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Ieee Transactions On Electron Devices. 48: 1975-1980. DOI: 10.1109/16.944185  0.797
2001 Ouyang QC, Chen X, Tasch Al.F. J, Register LF, Banerjee SK. Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs Ieee Transactions On Electron Devices. 48: 1245-1249. DOI: 10.1109/16.925255  0.755
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 3334-3336. DOI: 10.1063/1.1375004  0.801
2001 Chen X, Liu KC, Jayanarayanan SK, Banerjee S. Electron mobility enhancement in strained SiGe vertical n-type metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 377-379. DOI: 10.1063/1.1342038  0.807
2001 Chen X, Liu KC, Ray S, Banerjee SK. Bandgap engineering in vertical P-MOSFETs Solid-State Electronics. 45: 1939-1943. DOI: 10.1016/S0038-1101(01)00237-4  0.716
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor Solid-State Electronics. 45: 281-285. DOI: 10.1016/S0038-1101(01)00013-2  0.831
2001 Chen X. Theory of the switching response of CBMOST Chinese Journal of Electronics. 10: 5-6.  0.322
2000 Chen X, Wang X, Liu K, Kim D, Banerjee S. Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets Mrs Proceedings. 618: 219-224. DOI: 10.1557/Proc-618-219  0.653
2000 Chen X, Wang XD, Liu KC, Kim DW, Banerjee SK. Scanning tunneling spectroscopy investigation of the strained Si1-xGex band structure Journal of Materials Research. 15: 1257-1260. DOI: 10.1557/Jmr.2000.0183  0.569
2000 Ouyang Q, Chen X, Mudanai SP, Wang X, Kencke DL, Tasch AF, Register LF, Banerjee SK. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949. DOI: 10.1109/16.870577  0.735
2000 Chen X, Ouyang Q, Onsongo DM, Jayanarayanan SK, Tasch A, Banerjee SK. SiGe heterojunction vertical p-type metal–oxide–semiconductor field-effect transistors with Si cap Applied Physics Letters. 77: 1656-1658. DOI: 10.1063/1.1309018  0.806
2000 Shi Z, Chen X, Onsongo D, Quinones EJ, Banerjee SK. Simulation and optimization of strained Si1-xGex buried channel p-MOSFETs Solid-State Electronics. 44: 1223-1228. DOI: 10.1016/S0038-1101(00)00031-9  0.782
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