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Shen Ren - Publications

Affiliations: 
Stanford University, Palo Alto, CA 
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17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Otto LM, Burgos SP, Staffaroni M, Ren S, Süzer Ö, Stipe BC, Ashby PD, Hammack AT. Predicting scattering scanning near-field optical microscopy of mass-produced plasmonic devices Journal of Applied Physics. 123: 183104. DOI: 10.1063/1.5032222  0.369
2012 Ren S, Rong Y, Claussen SA, Schaevitz RK, Kamins TI, Harris JS, Miller DAB. Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides Ieee Photonics Technology Letters. 24: 461-463. DOI: 10.1109/Lpt.2011.2181496  0.672
2011 Ren S, Kamins TI, Miller DAB. Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides Ieee Photonics Journal. 3: 739-747. DOI: 10.1109/Jphot.2011.2162644  0.604
2011 Schaevitz RK, Edwards EH, Ren S, Ly-Gagnon DS, Audet RM, Rong Y, Claussen SA, Taşyürek E, Roth JE, Harris JS, Miller DAB. Simple electroabsorption calculator for germanium quantum well devices Ieee International Conference On Group Iv Photonics Gfp. 139-141. DOI: 10.1109/GROUP4.2011.6053742  0.695
2011 Ren S, Rong Y, Kamins TI, Harris JS, Miller DAB. Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition Applied Physics Letters. 98: 151108. DOI: 10.1063/1.3574912  0.645
2010 Edwards EH, Audet RM, Rong Y, Claussen SA, Schaevitz RK, Taşyürek E, Ren S, Kamins TI, Harris JS, Miller DAB, Dosunmu OI, Ünlü MS. Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined stark effect electroabsorption modulator 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 514-515. DOI: 10.1109/Photonics.2010.5698987  0.69
2010 Schaevitz RK, Roth JE, Edwards EH, Audet RM, Claussen SA, Taşyürek E, Ren S, Rong Y, Harris JS, Miller DAB. Simple electroabsorption model for silicon-germanium/germanium quantum well devices 2010 Ieee Photonics Society Summer Topical Meeting Series, Phosst 2010. 219-220. DOI: 10.1109/PHOSST.2010.5553693  0.696
2010 Schaevitz RK, Edwards EH, Audet RM, Rong Y, Ren S, Claussen SA, Taşyürek E, Roth JE, Harris JS, Miller DAB. Simple electroabsorption model for germanium quantum well devices 10th International Conference On Numerical Simulation of Optoelectronic Devices, Nusod 2010. 109-110. DOI: 10.1109/NUSOD.2010.5595641  0.695
2010 Edwards EH, Audet RM, Claussen SA, Schaevitz RK, Tasyürek E, Ren S, Dosunmu OI, Selim Ünlü M, Miller DAB. Si-Ge surface-normal asymmetric fabry-perot electroabsorption modulator Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010.  0.661
2009 Okyay AK, Onbasli MC, Ercan B, Yu HY, Ren S, Miller DAB, Saraswat KC, Nayfeh AM. High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 303-304. DOI: 10.1109/LEOS.2009.5343246  0.322
2009 Yu HY, Ren S, Jung WS, Okyay AK, Miller DAB, Saraswat KC. High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration Ieee Electron Device Letters. 30: 1161-1163. DOI: 10.1109/Led.2009.2030905  0.407
2009 Yu H, Kim D, Ren S, Kobayashi M, Miller DAB, Nishi Y, Saraswat KC. Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si Applied Physics Letters. 95: 161106. DOI: 10.1063/1.3254181  0.361
2008 Miller DAB, Schaevitz RK, Roth JE, Ren S, Fidaner O. Ge quantum well modulators on Si Ecs Transactions. 16: 851-856. DOI: 10.1149/1.2986844  0.736
2008 Schaevitz RK, Roth JE, Ren S, Fidaner O, Miller DAB. Material properties of Si-Ge/Ge quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 14: 1082-1089. DOI: 10.1109/Jstqe.2008.918935  0.723
2008 Schaevitz RK, Roth JE, Ren S, Fidaner O, Miller DAB. Material properties in Si-Ge/Ge quantum wells for silicon-integrated electro-absorption devices Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551759  0.748
2006 Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DAB, Harris JS. Quantum-confined stark effect in Ge/SiGe quantum wells on Si for optical modulators Ieee Journal On Selected Topics in Quantum Electronics. 12: 1503-1512. DOI: 10.1109/Jstqe.2006.883146  0.776
2005 Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DA, Harris JS. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon. Nature. 437: 1334-6. PMID 16251959 DOI: 10.1038/Nature04204  0.761
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