| Year |
Citation |
Score |
| 2017 |
Suh HS, Kim DH, Moni P, Xiong S, Ocola LE, Zaluzec NJ, Gleason KK, Nealey PF. Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat. Nature Nanotechnology. PMID 28346456 DOI: 10.1038/Nnano.2017.34 |
0.334 |
|
| 2015 |
Wang S, Smirnov V, Chen T, Holländer B, Zhang X, Xiong S, Zhao Y, Finger F. Effects of oxygen incorporation in solar cells with a-SiOx:H absorber layer Japanese Journal of Applied Physics. 54: 11401. DOI: 10.7567/Jjap.54.011401 |
0.637 |
|
| 2015 |
Wang S, Smirnov V, Chen T, Zhang X, Xiong S, Zhao Y, Finger F. Cover Picture: Tuning of the open-circuit voltage by wide band-gap absorber and doped layers in thin film silicon solar cells (Phys. Status Solidi RRL 8/2015) Physica Status Solidi-Rapid Research Letters. 9. DOI: 10.1002/Pssr.201570642 |
0.685 |
|
| 2015 |
Wang S, Smirnov V, Chen T, Zhang X, Xiong S, Zhao Y, Finger F. Tuning of the open‐circuit voltage by wide band‐gap absorber and doped layers in thin film silicon solar cells Physica Status Solidi-Rapid Research Letters. 9: 453-456. DOI: 10.1002/Pssr.201510148 |
0.666 |
|
| 2014 |
Wang S, Zhang X, Xiong S, Zhao Y. Structural properties of a-SiO x :H films studied by an improved infrared-transmission analysis method Chinese Physics B. 23: 98801. DOI: 10.1088/1674-1056/23/9/098801 |
0.602 |
|
| 2012 |
Zhang H, Zhang X, Hou G, Wei C, Sun J, Geng X, Xiong S, Zhao Y. The microstructure and optical properties of p-type microcrystalline silicon thin films characterized by ex-situ spectroscopic ellipsometry Thin Solid Films. 521: 17-21. DOI: 10.1016/J.Tsf.2012.03.081 |
0.771 |
|
| 2011 |
Zhang X, Wang G, Zheng X, Xu S, Wei C, Sun J, Geng X, Xiong S, Zhao Y. Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System Mrs Proceedings. 1321. DOI: 10.1557/Opl.2011.929 |
0.744 |
|
| 2011 |
Zhang X, Wang G, Xu S, Xiong S, Geng X, Zhao Y. Light-induced Open-circuit Voltage Increase in Amorphous Silicon/Microcrystalline Silicon Tandem Solar Cells Mrs Proceedings. 1321. DOI: 10.1557/Opl.2011.816 |
0.723 |
|
| 2011 |
Luo C, Li J, Li H, Meng Z, Huang Q, Xu S, Kwok HS, Xiong S. The Role of H-Plasma in Aluminum Induced Crystallization of Amorphous Silicon Mrs Proceedings. 1321: 191. DOI: 10.1557/Opl.2011.1249 |
0.508 |
|
| 2011 |
Luo C, Li J, Li H, Meng Z, Wu C, Huang Q, Shengzhi X, Kwok HS, Xiong S. A study of the post-hydrogenation passivation mechanism of crystallized poly-Si films Mrs Proceedings. 1321: 185. DOI: 10.1557/Opl.2011.1248 |
0.567 |
|
| 2011 |
Xu S, Zhang X, Li Y, Xiong S, Geng X, Zhao Y. Improve silane utilization for silicon thin film deposition at high rate Thin Solid Films. 520: 694-696. DOI: 10.1016/J.Tsf.2011.06.069 |
0.74 |
|
| 2011 |
Zhang H, Zhang X, Wei C, Sun J, Geng X, Xiong S, Zhao Y. Microstructure characterization of microcrystalline silicon thin films deposited by very high frequency plasma-enhanced chemical vapor deposition by spectroscopic ellipsometry Thin Solid Films. 520: 861-865. DOI: 10.1016/J.Tsf.2011.04.166 |
0.782 |
|
| 2011 |
Zhang X, Wang G, Zheng X, Wei C, Geng X, Xiong S, Zhao Y. A pre-hydrogen glow method to improve the reproducibility of intrinsic microcrystalline silicon thin film depositions in a single-chamber system Solar Energy Materials and Solar Cells. 95: 2448-2453. DOI: 10.1016/J.Solmat.2011.04.030 |
0.777 |
|
| 2010 |
Li J, Ding S, Yao Y, Luo C, Meng Z, Wu C, Xiong S, Zhang Z, Kwok H. Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser Optoelectronics Letters. 6: 288-290. DOI: 10.1007/S11801-010-0040-5 |
0.418 |
|
| 2010 |
Yao Y, Li J, Wang S, Meng Z, Wu C, Xiong S. The influence of Si precursor on poly-Si crystallized by YAG laser Physica Status Solidi (C). 7: 620-623. DOI: 10.1002/Pssc.200982786 |
0.429 |
|
| 2010 |
Meng Z, Liu Z, Zhao S, Wong M, Kwok HS, Li J, Wu C, Xiong S. Ni‐Si oxide as an inducing crystallization source for making poly‐Si Physica Status Solidi (C). 7: 612-615. DOI: 10.1002/Pssc.200982785 |
0.447 |
|
| 2010 |
Wu C, Meng Z, Li X, Zhao S, Liu Z, Li J, Xiong S, Wong M, Kwok HS. Metal induced crystallization of a‐Si using a nano‐layer of silicon oxide mask (MMIC) Physica Status Solidi (C). 7: 608-611. DOI: 10.1002/Pssc.200982783 |
0.44 |
|
| 2009 |
Zhao L, Wu C, Hao D, Yao Y, Meng Z, Xiong S. An integrated driving circuit implemented with p-type LTPS TFTs for AMOLED Optoelectronics Letters. 5: 104-107. DOI: 10.1007/S11801-009-8130-Y |
0.396 |
|
| 2009 |
Zhao Y, Zhang X, Xue J, Zhang J, Hou G, Cai N, Chen X, Wei C, Sun J, Zhang D, Ren H, Xiong S, Geng X. Research status of silicon‐based thin film solar cells in Nankai University Physica Status Solidi (C). 6: 758-764. DOI: 10.1002/Pssc.200880704 |
0.771 |
|
| 2008 |
Li J, Meng Z, Li Y, Wu C, Hoi SK, Xiong S. Crystallization of μc-Si on plastic substrate by using a pulsed double-frequency YAG laser Optoelectronics Letters. 4: 213-216. DOI: 10.1007/S11801-008-7139-Y |
0.453 |
|
| 2007 |
li J, Meng Z, Wong M, Wu C, Kwok HS, Xiong S. Post-annealing of solution-based metal-induced laterally crystallized poly-Si with triple-frequency YAG laser Journal of Materials Science: Materials in Electronics. 18: 351-354. DOI: 10.1007/S10854-007-9242-4 |
0.322 |
|
| 2007 |
Zhao S, Meng Z, Wu C, Xiong S, Wong M, Kwok HS. Solution-based metal induced crystallized polycrystalline silicon films and thin-film transistors Journal of Materials Science: Materials in Electronics. 18: 117-121. DOI: 10.1007/S10854-007-9157-0 |
0.494 |
|
| 2006 |
Li J, Wu C, Liu J, Zhao S, Meng Z, Xiong S, Zhang L. A new instability phenomenon in microcrystalline silicon thin film transistors Journal of Non-Crystalline Solids. 352: 1715-1718. DOI: 10.1016/J.Jnoncrysol.2006.01.032 |
0.495 |
|
| 2006 |
Wu C, Meng Z, Xiong S, Wong M, Kwok HS. Application of metal induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to system-on-glass display Journal of Non-Crystalline Solids. 352: 1741-1744. DOI: 10.1016/J.Jnoncrysol.2005.11.150 |
0.362 |
|
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