| Year |
Citation |
Score |
| 2020 |
Kim H, Choi S, Choi BJ. Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes The Coatings. 10: 489. DOI: 10.3390/Coatings10050489 |
0.385 |
|
| 2020 |
Kim H, Choi S, Choi BJ. Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition The Coatings. 10: 194. DOI: 10.3390/Coatings10020194 |
0.439 |
|
| 2020 |
Kim H, Yun HJ, Choi S, Choi BJ. Atomic Layer Deposition of AlGaN on GaN and Current Transport Mechanism in AlGaN/GaN Schottky Diodes Materials Transactions. 61: 88-93. DOI: 10.2320/Matertrans.Mt-M2019232 |
0.414 |
|
| 2020 |
Kim H, Yun HJ, Choi S, Choi BJ. Interfacial and electrical properties of nanolaminated HfO2/Al2O3 dielectrics on GaN with an AlN interlayer Semiconductor Science and Technology. 35: 15012. DOI: 10.1088/1361-6641/Ab5778 |
0.402 |
|
| 2020 |
Kim H, Jung MJ, Choi S, Choi BJ. ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions Materials Today Communications. 25: 101265. DOI: 10.1016/J.Mtcomm.2020.101265 |
0.42 |
|
| 2020 |
Choi S, Ansari AS, Yun HJ, Kim H, Shong B, Choi BJ. Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition Journal of Alloys and Compounds. 157186. DOI: 10.1016/J.Jallcom.2020.157186 |
0.374 |
|
| 2020 |
Yun HJ, Kim H, Choi BJ. Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition Ceramics International. 46: 13372-13376. DOI: 10.1016/J.Ceramint.2020.02.118 |
0.353 |
|
| 2020 |
Kim H, Yun HJ, Choi S, Choi BJ. Atomic Layer Deposition of AlN Thin Films on GaN and Electrical Properties in AlN/GaN Heterojunction Diodes Transactions On Electrical and Electronic Materials. DOI: 10.1007/S42341-020-00241-9 |
0.407 |
|
| 2020 |
Kim H, Yun HJ, Choi S, Choi BJ. Comparison of electrical and interfacial characteristics between atomic-layer-deposited AlN and AlGaN on a GaN substrate Applied Physics A. 126: 1-7. DOI: 10.1007/S00339-020-03645-9 |
0.436 |
|
| 2019 |
윤희주, 김호경, 최병준, Yun HJ, Kim H, Choi BJ. Growth of Aluminum Nitride Thin Films by Atomic Layer Deposition and Their Applications: A Review Korean Journal of Materials Research. 29: 567-577. DOI: 10.3740/Mrsk.2019.29.9.567 |
0.335 |
|
| 2019 |
Kim H, Yun HJ, Choi S, Choi BJ. Comparative Investigation of Interfacial Characteristics between HfO 2 /Al 2 O 3 and Al 2 O 3 /HfO 2 Dielectrics on AlN/p-Ge Structure Korean Journal of Materials Research. 29: 463-468. DOI: 10.3740/Mrsk.2019.29.8.463 |
0.397 |
|
| 2019 |
Kim H, Yun HJ, Choi S, Choi BJ. Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 41203. DOI: 10.1116/1.5094174 |
0.41 |
|
| 2019 |
Kim H, Kim ND, An SC, Yoon HJ, Choi BJ. Improved interfacial properties of thermal atomic layer deposited AlN on GaN Vacuum. 159: 379-381. DOI: 10.1016/J.Vacuum.2018.10.067 |
0.436 |
|
| 2019 |
Kim H, Kwon Y, Choi BJ. AlN passivation effect on Au/GaN Schottky contacts Thin Solid Films. 670: 41-45. DOI: 10.1016/J.Tsf.2018.12.008 |
0.433 |
|
| 2019 |
Kim H, Yun HJ, Choi BJ. Investigation of fast and slow traps in atomic layer deposited AlN on 4H-SiC Optik. 184: 527-532. DOI: 10.1016/J.Ijleo.2019.05.002 |
0.383 |
|
| 2019 |
Kim H, Choi BJ. Si Surface Passivation by Atomic Layer Deposited Al 2 O 3 with In-Situ H 2 O Prepulse Treatment Transactions On Electrical and Electronic Materials. 20: 359-363. DOI: 10.1007/S42341-019-00126-6 |
0.402 |
|
| 2018 |
Kim H, Yoon HJ, Choi BJ. Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN. Nanoscale Research Letters. 13: 232. PMID 30097798 DOI: 10.1186/S11671-018-2645-8 |
0.448 |
|
| 2018 |
Kim H, Cho Y, Kim D, Kim DH, Kim Y, Choi BJ. Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer Journal of the Korean Physical Society. 73: 349-354. DOI: 10.3938/Jkps.73.349 |
0.466 |
|
| 2018 |
Kim H, Kim DH, Choi BJ. Interfacial Properties of Atomic Layer Deposited Al 2 O 3 /AlN Bilayer on GaN Korean Journal of Materials Research. 28: 268-272. DOI: 10.3740/Mrsk.2018.28.5.268 |
0.467 |
|
| 2018 |
Kim H, Kim Y, Choi BJ. Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes Aip Advances. 8: 95022. DOI: 10.1063/1.5047538 |
0.444 |
|
| 2018 |
Kim H, Kim DH, Choi BJ. Post deposition annealing effect on the properties of Al2O3/InP interface Aip Advances. 8: 25211. DOI: 10.1063/1.5019856 |
0.415 |
|
| 2018 |
Kim H, Yun HJ, Choi BJ. Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer Rsc Advances. 8: 42390-42397. DOI: 10.1039/C8Ra09708A |
0.457 |
|
| 2018 |
Kim H, Yoon HJ, An SC, Kim ND, Choi BJ. Properties of AlN Thin Films on p-Ge Deposited by Thermal Atomic Layer Deposition Transactions On Electrical and Electronic Materials. 19: 462-466. DOI: 10.1007/S42341-018-0072-2 |
0.415 |
|
| 2018 |
Kim H, Kim ND, An SC, Yoon HJ, Choi BJ. Effect of Atomic Layer Deposited AlN Layer on Pt/4H-SiC Schottky Diodes Transactions On Electrical and Electronic Materials. 19: 235-240. DOI: 10.1007/S42341-018-0058-0 |
0.442 |
|
| 2018 |
Kim H, Song KM. Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN Transactions On Electrical and Electronic Materials. 19: 101-105. DOI: 10.1007/S42341-018-0015-Y |
0.385 |
|
| 2018 |
Kim H, Kim ND, An SC, Choi BJ. Electrical characteristics of atomic layer deposited AlN on n-InP Journal of Materials Science: Materials in Electronics. 29: 17508-17516. DOI: 10.1007/S10854-018-9851-0 |
0.416 |
|
| 2017 |
Kim H, Kim MS, Ryu SY, Choi BJ. Improving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition Korean Journal of Materials Research. 27: 362-366. DOI: 10.3740/Mrsk.2017.27.7.362 |
0.463 |
|
| 2017 |
Kim H, Kim MS, Yoon SY, Choi BJ. Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition Semiconductor Science and Technology. 32: 25011. DOI: 10.1088/1361-6641/32/2/025011 |
0.443 |
|
| 2017 |
Kim H, Kim DH, Ryu S, Choi BJ. Tuning electrical properties of Au/n-InP junctions by inserting atomic layer deposited Al2O3 layer Vacuum. 144: 256-260. DOI: 10.1016/J.Vacuum.2017.08.004 |
0.43 |
|
| 2017 |
Kim H, Kim DH, Ryu S, Choi BJ. Metal/nonpolar m -plane ZnO contacts with and without thin Al 2 O 3 interlayer deposited by atomic layer deposition Journal of Materials Science: Materials in Electronics. 28: 14974-14980. DOI: 10.1007/S10854-017-7370-Z |
0.437 |
|
| 2017 |
Kim H, Kim DH, Choi BJ. Interfacial and electrical properties of Al 2 O 3 /GaN metal–oxide–semiconductor junctions with ultrathin AlN layer Applied Physics A. 123: 800. DOI: 10.1007/S00339-017-1430-3 |
0.449 |
|
| 2016 |
Kim H. Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes Transactions On Electrical and Electronic Materials. 17: 293-296. DOI: 10.4313/Teem.2016.17.5.293 |
0.314 |
|
| 2016 |
Kim H. Reverse-bias Leakage Current Mechanisms in Cu/n-type Schottky Junction Using Oxygen Plasma Treatment Transactions On Electrical and Electronic Materials. 17: 113-117. DOI: 10.4313/Teem.2016.17.2.113 |
0.302 |
|
| 2016 |
Jung SH, Kim CZ, Kim Y, Jun DH, Kang HK, Kim H. Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions Journal of the Korean Physical Society. 68: 792-796. DOI: 10.3938/Jkps.68.792 |
0.428 |
|
| 2016 |
Kim H, Lee DH, Myung HS. Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction Korean Journal of Materials Research. 26: 412-416. DOI: 10.3740/Mrsk.2016.26.8.412 |
0.349 |
|
| 2016 |
Kim H, Kim MK, Kim YJ. Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge Korean Journal of Materials Research. 26: 556-560. DOI: 10.3740/Mrsk.2016.26.10.556 |
0.355 |
|
| 2016 |
Nam J, Lee Y, Kim CS, Kim H, Kim D, Jo S. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources Journal of Nanomaterials. 2016: 3613928. DOI: 10.1155/2016/3613928 |
0.321 |
|
| 2016 |
Jung SH, Kim CZ, Kim Y, Jun DH, Kim H, Kang HK. Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2529698 |
0.416 |
|
| 2016 |
Kim H, Jung CY, Kim SH, Cho Y, Kim DW. A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K Current Applied Physics. 16: 37-44. DOI: 10.1016/J.Cap.2015.10.008 |
0.353 |
|
| 2016 |
Nam J, Lee Y, Choi W, Kim CS, Kim H, Kim J, Kim D, Jo S. Transfer Printed Flexible and Stretchable Thin Film Solar Cells Using a Water‐Soluble Sacrificial Layer Advanced Energy Materials. 6: 1601269. DOI: 10.1002/Aenm.201601269 |
0.338 |
|
| 2015 |
Kim H. Electron Transport Mechanisms in Ag Schottky Contacts Fabricated on O-polar and Nonpolar m-plane Bulk ZnO Transactions On Electrical and Electronic Materials. 16: 285-289. DOI: 10.4313/Teem.2015.16.5.285 |
0.3 |
|
| 2015 |
Kim SH, Jung CY, Kim H, Cho Y, Kim D. Forward Current Transport Mechanism of Cu Schottky Barrier Formed on n-type Ge Wafer Transactions On Electrical and Electronic Materials. 16: 151-155. DOI: 10.4313/Teem.2015.16.3.151 |
0.327 |
|
| 2015 |
Jung CY, Kim SH, Kim H. Copper Schottky contacts to oxygen-plasma-treated n-type Ge Journal of the Korean Physical Society. 66: 1285-1290. DOI: 10.3938/Jkps.66.1285 |
0.33 |
|
| 2015 |
Kim H, Cho Y, Jung CY, Hyun Kim S, Kim D. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment Semiconductor Science and Technology. 30: 125016. DOI: 10.1088/0268-1242/30/12/125016 |
0.382 |
|
| 2015 |
Kim H, Kim SH, Jung CY, Cho Y, Kim DW. Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction Vacuum. 121: 125-128. DOI: 10.1016/J.Vacuum.2015.08.011 |
0.321 |
|
| 2014 |
Kim SH, Jung CY, Kim H. Characterization of Conduction Mechanism in Cu Schottky Contacts to p-type Ge Transactions On Electrical and Electronic Materials. 15: 324-327. DOI: 10.4313/Teem.2014.15.6.324 |
0.394 |
|
| 2014 |
Kim H, Kim H, Kim D. Analysis of current transport properties in nonpolar a-plane ZnO-based Schottky diodes Journal of the Korean Physical Society. 65: 751-756. DOI: 10.3938/Jkps.65.751 |
0.372 |
|
| 2014 |
Jung H, Jung SH, Kim CZ, Jun DH, Kang HK, Kim H. Observation of Ge bottom cells in InGaP/InGaAs/Ge triple-junction solar cells Journal of the Korean Physical Society. 65: 1113-1117. DOI: 10.3938/Jkps.65.1113 |
0.392 |
|
| 2014 |
Kim H, Kim H, Kim D. Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes Vacuum. 101: 92-97. DOI: 10.1016/J.Vacuum.2013.07.024 |
0.343 |
|
| 2014 |
Kim H, Song KM. Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN Journal of Luminescence. 145: 631-634. DOI: 10.1016/J.Jlumin.2013.08.034 |
0.314 |
|
| 2014 |
Jung SH, Kim CZ, Jun DH, Park W, Kang HK, Lee J, Kim H. Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/ Ge triple junction solar cells Current Applied Physics. 14: 1476-1480. DOI: 10.1016/J.Cap.2014.08.020 |
0.409 |
|
| 2014 |
Kim H, Park MH, Park SJ, Kim H, Song JD, Kim S, Kim H, Choi WJ, Kim D. Influence of InAs quantum dots on the transport properties of GaAs-based solar cell devices Current Applied Physics. 14: 192-195. DOI: 10.1016/J.Cap.2013.11.003 |
0.338 |
|
| 2014 |
Choi W, Kim CZ, Kim CS, Heo W, Joo T, Ryu SY, Kim H, Kim H, Kang HK, Jo S. A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells Advanced Energy Materials. 4: 1400589. DOI: 10.1002/Aenm.201400589 |
0.322 |
|
| 2013 |
Kim H, Kim H, Kim D. Analysis of interface states and series resistance in Ag/m-plane ZnO Schottky diodes Journal of the Korean Physical Society. 63: 2034-2038. DOI: 10.3938/Jkps.63.2034 |
0.362 |
|
| 2013 |
Kim CZ, Choi JH, Song K, Shin CS, Ko CG, Kim H. Optical investigation of GaInP-AlGaInP quantum-well layers for high-power red laser diodes Journal of the Korean Physical Society. 62: 1301-1306. DOI: 10.3938/Jkps.62.1301 |
0.391 |
|
| 2013 |
Song K, Kang D, Shin C, Kim H, Kim J. Improvement of crystal quality of nonpolar a-plane GaN by in-situ surface modification Materials Letters. 93: 356-359. DOI: 10.1016/J.Matlet.2012.11.104 |
0.339 |
|
| 2013 |
Man Song K, Min Kim J, Soo Shin C, Gi Ko C, Koun Cho H, Ho Yoon D, Min Hwang S, Kim H. Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels Journal of Crystal Growth. 370: 22-25. DOI: 10.1016/J.Jcrysgro.2012.06.026 |
0.385 |
|
| 2013 |
Cho Y, Lee E, Kim D, Ahn S, Jeong GY, Gwak J, Yun JH, Kim H. Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells Current Applied Physics. 13: 37-40. DOI: 10.1016/J.Cap.2012.06.006 |
0.352 |
|
| 2012 |
Kim H, Kim H, Kim D. Electrical properties of Ag Schottky contacts to hydrothermally-grown polar and nonpolar bulk ZnO Journal of the Korean Physical Society. 61: 1314-1318. DOI: 10.3938/Jkps.61.1314 |
0.354 |
|
| 2012 |
Kim CZ, Choi JH, Bae S, Song K, Shin CS, Ko CG, Kim H. Characterization of AlInP cladding layers with Mg and Si diffusion barriers for high-power red GaInP-AlGaInP laser diodes Journal of the Korean Physical Society. 61: 1097-1101. DOI: 10.3938/Jkps.61.1097 |
0.331 |
|
| 2012 |
Kim H, Sohn Ar, Kim DW. Barrier inhomogeneity in Ag Schottky contacts to bulk ZnO grown by different methods Journal of the Korean Physical Society. 60: 509-513. DOI: 10.3938/Jkps.60.509 |
0.366 |
|
| 2012 |
Kim H, Phark S, Song K, Kim D. Schottky contacts to polar and nonpolar n-type GaN Journal of the Korean Physical Society. 60: 104-107. DOI: 10.3938/Jkps.60.104 |
0.414 |
|
| 2012 |
Song KM, Kim H. Optical Properties of Undoped $a$-Plane GaN Grown with Different Initial Growth Pressures Japanese Journal of Applied Physics. 51: 092101. DOI: 10.1143/Jjap.51.092101 |
0.349 |
|
| 2012 |
Song KM, Kim H. A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN Japanese Journal of Applied Physics. 51: 051002. DOI: 10.1143/Jjap.51.051002 |
0.382 |
|
| 2012 |
Kim H, Sohn A, Kim DW. Silver Schottky contacts to Zn-polar and O-polar bulk ZnO grown by pressurized melt-growth method Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/3/035010 |
0.335 |
|
| 2012 |
Song KM, Kim JM, Kang BK, Shin CS, Ko CG, Kong BH, Cho HK, Yoon DH, Kim H, Hwang SM. Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN Applied Surface Science. 258: 3565-3570. DOI: 10.1016/J.Apsusc.2011.11.114 |
0.359 |
|
| 2011 |
Phark SH, Kim H, Song KM, Kang PG, Shin HS, Kim DW. Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy. Journal of Nanoscience and Nanotechnology. 11: 1413-6. PMID 21456201 DOI: 10.1166/Jnn.2011.3396 |
0.409 |
|
| 2011 |
Phark S, Kim H, Song K, Kim D. Observation of Barrier Inhomogeneity in Pt/a-plane n-type GaN Schottky Contacts Journal of the Korean Physical Society. 58: 1356-1360. DOI: 10.3938/Jkps.58.1356 |
0.39 |
|
| 2011 |
Song KM, Kim JM, Kim CZ, Kim H. Mg Doping Effect in Nonpolar $a$-Plane GaN Japanese Journal of Applied Physics. 50: 121002. DOI: 10.1143/Jjap.50.121002 |
0.301 |
|
| 2011 |
Song KM, Kim CZ, Kim JM, Yoon DH, Hwang SM, Kim H. Properties of Si-Dopeda-Plane GaN Grown with Different SiH4Flow Rates Japanese Journal of Applied Physics. 50: 055502. DOI: 10.1143/Jjap.50.055502 |
0.387 |
|
| 2011 |
Kang HK, Park S, Jun DH, Kim CZ, Song KM, Park W, Ko CG, Kim H. Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells Semiconductor Science and Technology. 26: 075009. DOI: 10.1088/0268-1242/26/7/075009 |
0.423 |
|
| 2011 |
Lee E, Gwon M, Kim DW, Kim H. Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/ SrTiO3 junctions Applied Physics Letters. 98. DOI: 10.1063/1.3567755 |
0.329 |
|
| 2010 |
Phark S, Kim H, Song KM, Kang PG, Shin HS, Kim D. Current transport in Pt Schottky contacts toa-plane n-type GaN Journal of Physics D: Applied Physics. 43: 165102. DOI: 10.1088/0022-3727/43/16/165102 |
0.408 |
|
| 2010 |
Kim H, Kim H, Kim D. Silver Schottky contacts to a-plane bulk ZnO Journal of Applied Physics. 108: 74514. DOI: 10.1063/1.3493261 |
0.372 |
|
| 2010 |
Kim H. Effect of KOH treatment on the Schottky barrier inhomogeneity in Ni/n-GaN Materials Science in Semiconductor Processing. 13: 51-55. DOI: 10.1016/J.Mssp.2010.02.007 |
0.392 |
|
| 2010 |
Kim CZ, Kim H, Song KM, Jun DH, Kang HK, Park W, Ko CG. Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction Microelectronic Engineering. 87: 677-681. DOI: 10.1016/J.Mee.2009.09.014 |
0.38 |
|
| 2009 |
Jun D, Kim CZ, Kim H, Shin H, Kang HK, Park W, Shin K, Ko CG. The Effects of Growth Temperature and Substrate Tilt Angle on GalnP/GaAs Tandem Solar Cells Journal of Semiconductor Technology and Science. 9: 91-97. DOI: 10.5573/Jsts.2009.9.2.091 |
0.398 |
|
| 2009 |
Kim H. Al contacts to nanoroughened p-GaN Microelectronics Journal. 40: 35-38. DOI: 10.1016/J.Mejo.2008.08.016 |
0.41 |
|
| 2008 |
Kim H. Reactive ion etching damage in n-GaN and its recovery by post-etch treatment Electronics Letters. 44: 1037-1039. DOI: 10.1049/El:20081771 |
0.362 |
|
| 2007 |
Kim HG, Deb P, Sands T. Nanopatterned contacts to GaN Journal of Electronic Materials. 36: 359-367. DOI: 10.1007/S11664-006-0050-Z |
0.714 |
|
| 2006 |
Deb P, Kim H, Qin Y, Lahiji R, Oliver M, Reifenberger R, Sands T. GaN nanorod Schottky and p-n junction diodes. Nano Letters. 6: 2893-8. PMID 17163726 DOI: 10.1021/Nl062152J |
0.725 |
|
| 2006 |
Kim HG, Deb P, Sands T. High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN Ieee Transactions On Electron Devices. 53: 2448-2453. DOI: 10.1109/Ted.2006.882287 |
0.704 |
|
| 2006 |
Kim HG, Kim SH, Deb P, Sands T. Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN Journal of Electronic Materials. 35: 107-112. DOI: 10.1007/S11664-006-0191-0 |
0.707 |
|
| 2005 |
Deb P, Kim H, Rawat V, Oliver M, Kim S, Marshall M, Stach E, Sands T. Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography. Nano Letters. 5: 1847-51. PMID 16159236 DOI: 10.1021/Nl0510762 |
0.724 |
|
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