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Xiaotian Zhang - Publications

Affiliations: 
Pennsylvania State University, State College, PA, United States 
Area:
Chemical Vapor Deposition
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19 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Li J, Wang J, Zhang X, Elias C, Ye G, Evans D, Eda G, Redwing JM, Cassabois G, Gil B, Valvin P, He R, Liu B, Edgar JH. Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux. Acs Nano. PMID 33818058 DOI: 10.1021/acsnano.1c00115  0.48
2020 Qian Q, Peng L, Perea-Lopez N, Fujisawa K, Zhang K, Zhang X, Choudhury TH, Redwing JM, Terrones M, Ma X, Huang S. Defect creation in WSe with a microsecond photoluminescence lifetime by focused ion beam irradiation. Nanoscale. PMID 31912844 DOI: 10.1039/C9Nr08390A  0.537
2020 Fox JJ, Zhang X, Balushi ZYA, Chubarov M, Kozhakhmetov A, Redwing JM. Van der Waals epitaxy and composition control of layered SnSxSe2−x alloy thin films Journal of Materials Research. 35: 1386-1396. DOI: 10.1557/Jmr.2020.19  0.548
2020 Choudhury TH, Zhang X, Al Balushi ZY, Chubarov M, Redwing JM. Epitaxial Growth of Two-Dimensional Layered Transition Metal Dichalcogenides Annual Review of Materials Research. 50: 155-177. DOI: 10.1146/Annurev-Matsci-090519-113456  0.612
2020 Xiong K, Zhang X, Li L, Zhang F, Davis B, Madjar A, Goritz A, Wietstruck M, Kaynak M, Strandwitz NC, Terrones M, Redwing JM, Hwang JCM. Temperature-Dependent RF Characteristics of Al₂O₃-Passivated WSe₂ MOSFETs Ieee Electron Device Letters. 41: 1134-1137. DOI: 10.1109/Led.2020.2999906  0.539
2020 Li J, Yuan C, Elias C, Wang J, Zhang X, Ye G, Huang C, Kuball M, Eda G, Redwing JM, He R, Cassabois G, Gil B, Valvin P, Pelini T, et al. Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient Chemistry of Materials. 32: 5066-5072. DOI: 10.1021/Acs.Chemmater.0C00830  0.547
2020 Zhang X, Lee S, Bansal A, Zhang F, Terrones M, Jackson TN, Redwing JM. Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition Journal of Crystal Growth. 533: 125471. DOI: 10.1016/J.Jcrysgro.2019.125471  0.6
2019 Wu Z, Li J, Zhang X, Redwing JM, Zheng Y. Room-Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects. Advanced Materials (Deerfield Beach, Fla.). e1904132. PMID 31621963 DOI: 10.1002/Adma.201904132  0.49
2019 Zhang X, Zhang F, Wang Y, Schulman DS, Zhang T, Bansal A, Alem N, Das S, Crespi VH, Terrones M, Redwing JM. Defect-Controlled Nucleation and Orientation of WSe on hBN - A Route to Single Crystal Epitaxial Monolayers. Acs Nano. PMID 30758945 DOI: 10.1021/Acsnano.8B09230  0.605
2019 Wu W, Dass CK, Hendrickson JR, Montaño RD, Fischer RE, Zhang X, Choudhury TH, Redwing JM, Wang Y, Pettes MT. Locally defined quantum emission from epitaxial few-layer tungsten diselenide Applied Physics Letters. 114: 213102. DOI: 10.1063/1.5091779  0.58
2019 Walter TN, Lee S, Zhang X, Chubarov M, Redwing JM, Jackson TN, Mohney SE. Atomic layer deposition of ZnO on MoS2 and WSe2 Applied Surface Science. 480: 43-51. DOI: 10.1016/J.Apsusc.2019.02.182  0.605
2019 Wu Z, Li J, Zhang X, Redwing JM, Zheng Y. Chiral Metamaterials: Room‐Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects (Adv. Mater. 49/2019) Advanced Materials. 31: 1970347. DOI: 10.1002/Adma.201970347  0.451
2018 Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, et al. Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. Acs Nano. PMID 29360349 DOI: 10.1021/Acsnano.7B07059  0.684
2018 Zhang X, Choudhury TH, Chubarov M, Xiang Y, Jariwala B, Zhang F, Alem N, Wang GC, Robinson JA, Redwing JM. Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire. Nano Letters. PMID 29342357 DOI: 10.1021/Acs.Nanolett.7B04521  0.562
2017 Chubarov M, Choudhury TH, Zhang X, Redwing JM. In-Plane X-ray Diffraction for Characterization of Monolayer and Few-Layer Transition Metal Dichalcogenides Films. Nanotechnology. PMID 29239306 DOI: 10.1088/1361-6528/Aaa1Bd  0.592
2017 Zhang F, Erb C, Runkle L, Zhang X, Alem N. Etchant-free Transfer of 2D Nanostructures. Nanotechnology. PMID 29160774 DOI: 10.1088/1361-6528/Aa9C21  0.434
2016 Zhang X, Al Balushi ZY, Zhang F, Choudhury TH, Eichfeld SM, Alem N, Jackson TN, Robinson JA, Redwing JM. Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-5033-0  0.701
2016 Gong Y, Zhang X, Redwing JM, Jackson TN. Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2 Journal of Electronic Materials. 45: 6280-6284. DOI: 10.1007/S11664-016-4987-2  0.573
2015 Chen C, Zhang X, Krishna L, Kendrick C, Shang SL, Toberer E, Liu ZK, Tamboli A, Redwing JM. Synthesis, characterization and chemical stability of silicon dichalcogenides, Si(Se x S1-x )2 Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.12.005  0.48
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