Year |
Citation |
Score |
2023 |
Zou D, He Z, Chen M, Yan L, Guo Y, Gao G, Li C, Piao Y, Cheng X, Chan PKL. Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping. Advanced Materials (Deerfield Beach, Fla.). e2211600. PMID 36841244 DOI: 10.1002/adma.202211600 |
0.438 |
|
2022 |
Yang P, Zha J, Gao G, Zheng L, Huang H, Xia Y, Xu S, Xiong T, Zhang Z, Yang Z, Chen Y, Ki DK, Liou JJ, Liao W, Tan C. Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility. Nano-Micro Letters. 14: 109. PMID 35441245 DOI: 10.1007/s40820-022-00852-2 |
0.409 |
|
2021 |
Yu J, Yang X, Gao G, Xiong Y, Wang Y, Han J, Chen Y, Zhang H, Sun Q, Wang ZL. Bioinspired mechano-photonic artificial synapse based on graphene/MoS heterostructure. Science Advances. 7. PMID 33731346 DOI: 10.1126/sciadv.abd9117 |
0.273 |
|
2021 |
Yu J, Gao G, Huang J, Yang X, Han J, Zhang H, Chen Y, Zhao C, Sun Q, Wang ZL. Contact-electrification-activated artificial afferents at femtojoule energy. Nature Communications. 12: 1581. PMID 33707420 DOI: 10.1038/s41467-021-21890-1 |
0.292 |
|
2020 |
Hua Q, Gao G, Jiang C, Yu J, Sun J, Zhang T, Gao B, Cheng W, Liang R, Qian H, Hu W, Sun Q, Wang ZL, Wu H. Atomic threshold-switching enabled MoS transistors towards ultralow-power electronics. Nature Communications. 11: 6207. PMID 33277501 DOI: 10.1038/s41467-020-20051-0 |
0.436 |
|
2020 |
Zhang H, Yu J, Yang X, Gao G, Qin S, Sun J, Ding M, Jia C, Sun Q, Wang ZL. Ion Gel Capacitively-Coupled Tribotronic Gating for Multi-Parameter Distance Sensing. Acs Nano. PMID 32058695 DOI: 10.1021/Acsnano.9B09549 |
0.433 |
|
2020 |
Yang X, Yu J, Zhao J, Chen Y, Gao G, Wang Y, Sun Q, Wang ZL. Mechanoplastic Tribotronic Floating‐Gate Neuromorphic Transistor Advanced Functional Materials. 30: 2002506. DOI: 10.1002/Adfm.202002506 |
0.443 |
|
2019 |
Chen Y, Gao G, Zhao J, Zhang H, Yu J, Yang X, Zhang Q, Zhang W, Xu S, Sun J, Meng Y, Sun Q. Piezotronic Graphene Artificial Sensory Synapse Advanced Functional Materials. 29: 1900959. DOI: 10.1002/Adfm.201900959 |
0.266 |
|
2019 |
Yang X, Hu G, Gao G, Chen X, Sun J, Wan B, Zhang Q, Qin S, Zhang W, Pan C, Sun Q, Wang ZL. Coupled Ion‐Gel Channel‐Width Gating and Piezotronic Interface Gating in ZnO Nanowire Devices Advanced Functional Materials. 29: 1807837. DOI: 10.1002/Adfm.201807837 |
0.387 |
|
2018 |
Gao G, Yu J, Yang X, Pang Y, Zhao J, Pan C, Sun Q, Wang ZL. Triboiontronic Transistor of MoS. Advanced Materials (Deerfield Beach, Fla.). e1806905. PMID 30589132 DOI: 10.1002/Adma.201806905 |
0.477 |
|
2018 |
Zhao J, Wei Z, Zhang Q, Yu H, Wang S, Yang X, Gao G, Qin S, Zhang G, Sun Q, Wang ZL. Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS2 Field Effect Transistor. Acs Nano. PMID 30563324 DOI: 10.1021/Acsnano.8B07477 |
0.449 |
|
2018 |
Liu X, Liang R, Gao G, Pan C, Jiang C, Xu Q, Luo J, Zou X, Yang Z, Liao L, Wang ZL. MoS Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit. Advanced Materials (Deerfield Beach, Fla.). e1800932. PMID 29782679 DOI: 10.1002/Adma.201800932 |
0.475 |
|
2018 |
Wang L, Liu S, Gao G, Pang Y, Yin X, Feng X, Zhu L, Bai Y, Chen L, Xiao T, Wang X, Qin Y, Wang ZL. Ultrathin Piezotronic Transistors with 2-Nanometer Channel Lengths. Acs Nano. PMID 29701956 DOI: 10.1021/Acsnano.8B01957 |
0.423 |
|
2018 |
Gao G, Wan B, Liu X, Sun Q, Yang X, Wang L, Pan C, Wang ZL. Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus. Advanced Materials (Deerfield Beach, Fla.). PMID 29436069 DOI: 10.1002/Adma.201705088 |
0.466 |
|
2018 |
Huo Z, Peng Y, Zhang Y, Gao G, Wan B, Wu W, Yang Z, Wang X, Pan C. Recent Advances in Large-Scale Tactile Sensor Arrays Based on a Transistor Matrix Advanced Materials Interfaces. 5: 1801061. DOI: 10.1002/ADMI.201801061 |
0.224 |
|
2017 |
Zhang K, Peng M, Wu W, Guo J, Gao G, Liu Y, Kou J, Wen R, Lei Y, Yu A, Zhang Y, Zhai J, Wang ZL. A flexible p-CuO/n-MoS2 heterojunction photodetector with enhanced photoresponse by the piezo-phototronic effect Materials Horizons. 4: 274-280. DOI: 10.1039/C6Mh00568C |
0.414 |
|
2016 |
Liu X, Yang X, Gao G, Yang Z, Liu H, Li Q, Lou Z, Shen G, Liao L, Pan C, Wang ZL. Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistor by Piezo-Phototronic Effect from GaN Nanowire. Acs Nano. PMID 27447946 DOI: 10.1021/Acsnano.6B01839 |
0.462 |
|
2016 |
Xue F, Chen L, Chen J, Liu J, Wang L, Chen M, Pang Y, Yang X, Gao G, Zhai J, Wang ZL. p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect. Advanced Materials (Deerfield Beach, Fla.). PMID 26936489 DOI: 10.1002/Adma.201506472 |
0.393 |
|
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